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    DIODE 1FT Search Results

    DIODE 1FT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 1FT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    smd diode 27c

    Abstract: marking smd NU smd diode marking sim kb MARKING SMD Diode marking 27C SMD MARKING DIODE VU smd marking nu smd diode marking NN smd marking 2x DG1M3
    Text: Schottky Barrier Diode Single Diode m tm m DG1M3 o u t lin e Package : G 1 F Unu:mm Weight O.O llii Typ 30 V 1A in 3 Feature • • • • • lâiW§y=0.8mm • ß V f = 0.46 V • 1ftlR= 0.05mA i |C24 Ultra-small SMD Ultla-thin PKG=0.8mm Low Vf -0.46V


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    J532-1) smd diode 27c marking smd NU smd diode marking sim kb MARKING SMD Diode marking 27C SMD MARKING DIODE VU smd marking nu smd diode marking NN smd marking 2x DG1M3 PDF

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    Untitled

    Abstract: No abstract text available
    Text: CM420855 SCR/Diode POW-R-BLOK Modules Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 55 Amperes/800 Volts Description: Powerex SCR/Diode POW-R-BLOK™ Modules are designed for use in applications requiring Half-Control and


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    CM420855 Amperes/800 peres/800 MAX/10 PDF

    Untitled

    Abstract: No abstract text available
    Text: International IÖ R Rectifier Part Number Phase Control SCR High-Voltage . "ORM Diode Rating* ’ T AV> @ Tc (A r q (V) (V) Fax Case on Demand Outline Key Number 'ism (a) (A) (b) RQIC(DC) (K/W) (A) Notes Thyristor / High Voltage Diode Doubler Circuit Negative Control


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    1RKL136-14 I42-I2 1RKL142-20 L162-08 L162-16 l25cC PDF

    Untitled

    Abstract: No abstract text available
    Text: phase Control SCR International IO R Rectifier T p S .-.NN^LIlSAff I Ï J - Port Number / High-Voltage . VDRM Diode Rating* ' t AV @ tC 00 00 (À) (°C) .TS* . , . W (A) (°) (A) R Rc=JiC(DC) (K/W) Notes on* Cose Deman(| Outline Number Key Thyristor / High Voltage Diode


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    IRKH250-16 125cC PDF

    4n4001

    Abstract: 4N4U 4N40 4N39 GE SCR 1000
    Text: G E SOLI» STATE DÌ 3fl7S0fll DDlltflS 0 optoelectronic specification« 7 W /-Î7 ” Photon Coupled Isolator 4N39,4N40 SVM0OI Ga As Infrared Em itting Diode & Light Activated SCR A B C The GE Solid State 4N39 and 4N40 consist of a gallium arsenide, infrared emitting diode coupled with a light activated silicon con­


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    3fl750fll 220VAC the4N40 4n4001 4N4U 4N40 4N39 GE SCR 1000 PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diode Single Diode D1FJ10 Unit ‘ mm Package I 1F Weight 0.058g Typ Ä V -K v -? 1 0 0 V 1A Feature • /J ^ S M D • Ir= CD*— M — • S m all S M D 0.2mA • L o w lft=0 .2 m A Main Use • S w itc h in g R eg u la to r • D C /D C D V K -^


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    D1FJ10 PDF

    A479

    Abstract: r-14 a479
    Text: ESAG63-004 2 oa SCHOTTKY BARRIER DIODE • 4 ^ ^ : Features • 1ftVF Low V F m m Connection Diagram Super high speed sw itchin g. • 1 u - :t - High reliability by planer design. ■ fflìÉ : Applications High speed pow er sw itch in g . M axim um Ratings and Characteristics


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    ESAG63-004 500ns, ESAC63-004 A479 r-14 a479 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS LG Z181 2 to 6 DIODE ARRAYS LG Z182- 186 8, 10 DIODE ARRAYS LG Z188, 180 SINGLE Green Miniature LED Lamp P a cka ge D im e n sio n s in In ch e s m m 0 1 8 ( 45) 0 12 ( 3) FEA TU RES * G re e n D iffu s e d Lens C h a ra c te ris tic s (TA=25°C) All values typical unless otherw ise noted


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    Z181-CO Z182-CO Z183-CO Z184-CO 71Bfi-CO Z180-CO PDF

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


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    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


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    1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m PDF

    moc 3021 scr

    Abstract: SCR moc3020 schematic moc 3041 application SCR moc3020 circuit moc 3021 zero crossing moc 3041 SCR application moc3041 application note 1Ft 6PIN MOC3040 moc 3041 application note
    Text: MOC3040 MOC3041 ZERO VOLTAGE CROSSING OPTICALLY ISOLATED TRIAC DRIVER This device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a Zero Voltage Crossing bilateral triac driver.


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    MOC3040 MOC3041 moc 3021 scr SCR moc3020 schematic moc 3041 application SCR moc3020 circuit moc 3021 zero crossing moc 3041 SCR application moc3041 application note 1Ft 6PIN MOC3040 moc 3041 application note PDF

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


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    1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p PDF

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE PDF

    GM5WA06256A

    Abstract: ip22m ph9080 M7S2
    Text: SH ARP COMPOUND SEMICONDUCTOR SYSTEMS DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION r DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE m o d e ln o . GM5WA06256A J Specified for CUSTOMERS' APPROVAL PRESENTED . Date Date By By Aflr ~ ßé


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    GM5WA06256A dg063016 GM5WA06256A ip22m ph9080 M7S2 PDF

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 PDF

    ERE81-004

    Abstract: ERE81
    Text: ERE81 30A : Outline Drawings SCHOTTKY BARRIER DIODE : Features • Low forward voltage idrop(VFM) • Fast recovery time • Stud mounted i Applications • Sw itching power supplies Prevention to contrary connection • Others. Maxim um Ratings and Characteristics


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    ERE81 ERE81-004 ERE81-004 PDF

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK1276A N-channel MOS-FET F-V Series 250V > Features - 0,25Q 20 A 100W > Outline Drawing Include Fast Recovery Diode High Voltage Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics - Absolute Maximum Ratings Tc=25°CV


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    2SK1276A PDF

    k302p

    Abstract: No abstract text available
    Text: K3020P G Series VISHAY Vishay Telefunken T Optocoupler with Phototriac Output Description The K3020P(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using


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    K3020P 11-Jan-99 k302p PDF

    TLP596A

    Abstract: 2fl marking
    Text: PHOTO RELAY TLP596A TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP596A consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package. The TLP596A is a bi-directional switch which can replace mechanical


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    TLP596A TLP596A 300mA 2500Vrms UL1577, E67349 300mA 2fl marking PDF

    Untitled

    Abstract: No abstract text available
    Text: ERC25 1 .2A : Outline Drawings FAST RECOVERY DIODE r^ . - 28MIN — *1.0 1 1 7.5 — ?8MIN — * Features •R High voltage by mesa design. : M arking tf • Sf&JSte High reliability * 7 —3 - f- : W Color code : Green PMBISfc ■EISs I Applications


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    ERC25 28MIN 95t/R89 PDF

    MARK 11f diode

    Abstract: ERC25 JT MARKING
    Text: ERC25 1 .2A : Outline Drawings FAST RECOVERY DIODE r . - 28MIN — ^ *1.0 - 1 1 7.5 — ? 8MIN — * Features •R High voltage by mesa design. : M arking tf • Sf&JSte High reliability * 7 —3 - f- : W Color code : Green PMBISfc ■EISs I Applications


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    ERC25 MARK 11f diode JT MARKING PDF

    ERE81

    Abstract: ERE81-004
    Text: ERE81 30A > 3 • y h + - / « ; r ^ ' f + : Outline Drawings - K SC H O TTKY B A R R IER DIODE : Features • • Low forward voltage ¡dropiVpM) Fast recovery time • Stud mounted : Applications • Switching power supplies • Prevention to contrary connection


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    ERE81 ERE81-004 ERE81-004 PDF