smd diode schottky code marking 5A
Abstract: SMD MARKING CODE M 4 Diode U01 SMD diode smd marking 5P smd DIODE code marking Q KIV* diode smd diode marking c3 diode SMD MARKING CODE JV DE5PC3 smd code marking js
Text: Schottky Barrier Diode Twin Diode mnm DE5PC3 Package o u t lin e E-pack U nit I mm W eigh t 0.326 k T y p 30V 5A 1 *1 *1 0 @ ® Feature • SMD • Ultra-Low V f=0.4V • High lo Rating -Small-RKG • SMD • î 3 ® V f =0.4V T y p e No. Date code Main Use
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0336g
TJ-25TC
smd diode schottky code marking 5A
SMD MARKING CODE M 4 Diode
U01 SMD
diode smd marking 5P
smd DIODE code marking Q
KIV* diode
smd diode marking c3
diode SMD MARKING CODE JV
DE5PC3
smd code marking js
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D1NF60
Abstract: AX057 fly wheel
Text: Super Fast Recovery Diode Axial Diode OUTLINE Package I AX057 D1NF60 ♦ 1 6 0 0 V 0 .8 A i la i Feature • r a M ± FRD • High Voltage Super FRD • ñS'íX • Low Noise • trr=400ns 02.6 * 2 • trr=400ns M Main Use « 1» ¡» S M B * 2 tt« 3 -K Spec Code
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D1NF60
400ns
AX057
50e0-52mm
J533-1
D1NF60
AX057
fly wheel
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Q62702-A1028
Abstract: 6203W diode bat 85
Text: BAT 62-03W Silicon Schottky Diode • Low Barrier diode for detectors up to GHz frequencies ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 62-03W L Q62702-A1028 Pin Configuration Package 1=A SOD-323
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2-03W
2-03W
Q62702-A1028
OD-323
900MHz
Mar-07-1996
Q62702-A1028
6203W
diode bat 85
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diode marking code MU
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode Wtm OUTLINE Package : ITO-3P D30SC4M Unit-mm Weight 4.3g Typ 5.5 40V 30A Control No. • Tj=150°C • P rr sm Rating • PRRSM T ’A ' i ^ V Î ' I ' K i E • Date code Feature m w m • Tj=150°C 7 ) [Æ - J U K @ 0192
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D30SC4M
i50Hz
diode marking code MU
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Marking Code "s3" diode
Abstract: S3 DIODE schottky S3 marking DIODE Marking "s3" Schottky barrier Diode marking CODE 1M Marking Code s3 diode Marking s3 Schottky barrier 1SS367
Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High Speed Switching 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC
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1SS367
OD-323
OD-323
Marking Code "s3" diode
S3 DIODE schottky
S3 marking DIODE
Marking "s3" Schottky barrier
Diode marking CODE 1M
Marking Code s3 diode
Marking s3 Schottky barrier
1SS367
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Q62702-A471
Abstract: No abstract text available
Text: 3SE D • 023b35Q Q O lb S S l 5 « SIP Silicon Switching Diode Array SIEM ENS/ SPCL-i BAW 56 S EM ICON DS _ T~ 0 3 - 0 1 • For high-speed switching applications • Common anode A Type S BAW 56 Marking A1 Ordering code or versions In bulk Q62702-A471
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023b35Q
Q62702-A471
Q62702-A688
BAW56
T-03-09
23b320
Q62702-A471
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6050
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode SMBD 6050 • For high-speed switching applications Type Marking Ordering Code tape and reel SMBD 6050 s5A Q68000-A8439 Pin Configuration Package1) SOT-23 < i^ i s o-o ^ ' EHA07002 Maximum Ratings Parameter
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Q68000-A8439
OT-23
6050
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode single Diode mwm o u t lin e Package : M1F M1FP3 » y -K -r-» 30V 1.29A Feature C a th o d e n w ir k |P 6 N • /J ^ S M D • Small SMD • Ì81S V f =0.4V • Ultra-Low V f=0.4V I — w — ^P yM dfr W T ype No. Main Use Date code
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50IIz
J532-1)
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smd diode schottky code marking 5A
Abstract: diode SMD MARKING CODE JV diode smd 6j DIODE SMD MARKING CODE VE SHINDENGEN DIODE SMD 6J U Voltage regulator diode smd
Text: Schottky Barrier Diode single Diode m n m M1FJ4 o u tlin e W eight 0.027« T y p 40V 1.5A i j '/ —K t — ? Cathode m ark (D Feature • A h iü S M D • Small SMD • filR = 0 .0 5 m A • Low lR=0.05mA |z 64 T y p e No. D a te code 3.9 Main Use •
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05rriA
smd diode schottky code marking 5A
diode SMD MARKING CODE JV
diode smd 6j
DIODE SMD MARKING CODE VE
SHINDENGEN DIODE
SMD 6J U
Voltage regulator diode smd
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Untitled
Abstract: No abstract text available
Text: f w > ' $ - O c! Silicon Switching Diode Array _ 32E D • B A S 28 Ô23b320 GQlbSDb G « S I P SIEMENS/ SPCLi SEMICONDS • For high-speed switching • Electrically Isolated diodes Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape
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23b320
Q62702-A163
Q62702-A77
T-03-09
23b320
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Untitled
Abstract: No abstract text available
Text: _ SMS05C j • ,■.» - „ ,V r " " September 17, 1998 TVS Diode Array For ESD and Latch-Up Protection thru SM S24C TE L805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to
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SMS05C
L805-498-2111
OT23-6L
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RB521
Abstract: No abstract text available
Text: Formosa MS SMD Schottky Barrier Diode RB520G/RB521G List List. 1 Package outline. 2
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RB520G/RB521G
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
1000hrs.
METHOD-1038
RB521
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CDBU00340-HF
Abstract: smd diode code B2 SMD marking b2 diode marking b2 diode code b2 smd QW-G1002 MARKING CODE B2 diode 1M MARKING CODE
Text: SMD Schottky Barrier Diode CDBU00340-HF I o = 30 mA V R = 40 Volts RoHS Device Halogen Free 0603/SOD-523F Features 0.071 1.80 0.063(1.60) -Designed for mounting on small surface. -Extremely thin package. 0.039(1.00) 0.031(0.80) -Low stored charge. -Majority carrier conduction.
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CDBU00340-HF
0603/SOD-523F
/SOD-523F
MIL-STD-750
OD-523F)
QW-G1002
CDBU00340-HF
0603/SOD-523F
smd diode code B2
SMD marking b2
diode marking b2
diode code b2 smd
QW-G1002
MARKING CODE B2
diode 1M MARKING CODE
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EMIF10-LCD02F3
Abstract: EMIF10 LCD02F3 Part Marking STMicroelectronics
Text: EMIF10-LCD02F3 10 line EMI filter and ESD protection for LCD and cameras Main product characteristics: Where EMI filtering in ESD sensitive equipment is required : • LCD for Mobile phones ■ Computers and printers ■ Communication systems ■ MCU Boards
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EMIF10-LCD02F3
EMIF10-LCD02F3
EMIF10
EMIF10 LCD02F3
Part Marking STMicroelectronics
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L2SK3018WT1G
Abstract: l2sk3018
Text: LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET 100 mA, 30 V L2SK3018WT1G S-L2SK3018WT1G • Features 1 Low on-resistance. 2) Fast switching speed. 3) Low voltage drive 2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits.
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L2SK3018WT1G
S-L2SK3018WT1G
SC-70
AEC-Q101
L2SK3018WT1G
l2sk3018
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EMIF07-LCD02F3
Abstract: emif07 lcd02f3 LCD for mobile Ir 150F Date Code Marking STMicroelectronics Part Marking STMicroelectronics AN1235 AN1751 JESD97
Text: EMIF07-LCD02F3 IPAD 7 line EMI filter and ESD protection for LCD and cameras Main product characteristics: Where EMI filtering in ESD sensitive equipment is required : • LCD for Mobile phones ■ Computers and printers ■ Communication systems ■ MCU Boards
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EMIF07-LCD02F3
EMIF07-LCD02F3
EMIF07
emif07 lcd02f3
LCD for mobile
Ir 150F
Date Code Marking STMicroelectronics
Part Marking STMicroelectronics
AN1235
AN1751
JESD97
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transistor A2
Abstract: Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual
Text: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A
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ZXTNS618MC
150mV
500mV
DS31933
transistor A2
Marking Y1 SOT26
DFN3020
diodes transistor marking k2 dual
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marking KN sc70
Abstract: L2SK3018WT1G Diode marking CODE 5M DIODE MARKING code 05M
Text: LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET 100 mA, 30 V L2SK3018WT1G 3 • Features 1 Low on-resistance. 2) Fast switching speed. 3) Low voltage drive 2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel.
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L2SK3018WT1G
SC-70
marking KN sc70
L2SK3018WT1G
Diode marking CODE 5M
DIODE MARKING code 05M
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125OC
Abstract: RB420D
Text: Formosa MS SMD Small Signal Schottky Barrier Diode RB420D List List. 1 Package outline. 2
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RB420D
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
1000hrs.
METHOD-1038
125OC
RB420D
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Untitled
Abstract: No abstract text available
Text: Formosa MS SMD Small Signal Schottky Barrier Diode RB420D List List. 1 Package outline. 2
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RB420D
MIL-STD-750D
METHOD-1051
1000hrs.
METHOD-1038
METHOD-1031
METHOD-4066-2
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motorola diode marking code
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Sw itching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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SC-70
M1MA141KT1
M1MA142KT1
M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
SC-70/SOT-323
motorola diode marking code
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IRF4905
Abstract: IRF4905 P-channel power 1280C
Text: PD - 9.1280C IRF4905 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.02Ω G ID = -74A
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1280C
IRF4905
O-220
IRF1010
IRF4905
IRF4905 P-channel power
1280C
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Si5475DC
Abstract: S0233
Text: Si5475DC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.031 @ VGS = –4.5 V –7.6 0.041 @ VGS = –2.5 V –6.6 0.054 @ VGS = –1.8 V –5.8 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BF XX
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Si5475DC
S-02332--Rev.
23-Oct-00
S0233
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Untitled
Abstract: No abstract text available
Text: EMIF09-SD01F3 9-line IPAD , EMI filter and ESD protection Features • 9-line EMI low-pass filter and ESD protection ■ High efficiency in EMI filtering ■ Lead-free package ■ 400 µm pitch ■ Very low PCB space occupation: < 4 mm2 ■ Very thin package: 0.6 mm
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EMIF09-SD01F3
IEC61000-4-2
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