1N1182
Abstract: diode 1N1188 1N1111 1N1130 1N1119 1N1184 1n1194 1N1118 1N1120 1N1124
Text: 3869720 G E N E R A L DIODE CORP 86D 00323 GENERAL DIODE CORP flb D T~ DE~ 3fiLT720 □□□□323 1 STUD MOUNTED SILICON POWER RECTIFIERS . . . cont’d i\\ \ l l\1 TYPE \ 1N1118 1N1124 ÍN1124A 400 500 600 200 200 1N1125 1N1125A ' 1N112S 1N1126A 1N1127
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1N1118
1N1119
1N1120
1N1124
N1124A
1N1125
1N1125A
1N112S
1N1126A
1N1127
1N1182
diode 1N1188
1N1111
1N1130
1N1184
1n1194
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1N1183(R)
Abstract: 1N3768
Text: 1N1183 R T HR U 1N3768(R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODE STUD TYPES Features 35Amp Rectifier 50-1000 Volts High Surge Capability Types Up to 1000V V RRM DO-5 Maximum Ratings Operating Temperature: Storage Temperature: Part Number 1N1183(R)
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1N1183
1N3768
35Amp
1N1184
1N1186
1N1188
1N1189
1N1190
1N3765
1N1183(R)
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1N1183A(R)
Abstract: No abstract text available
Text: 1N1183A R T HR U 1N1190A(R) DACO SEMICONDUCTOR CO., LTD. Features STANDARD RECOVERY DIODE STUD TYPES 40A 40Amp Rectifier 50-600 Volts High Surge Capability Types Up to 600V V RRM Maximum Ratings Operating Temperature: Storage Temperature: Part Number 1N1183A(R)
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1N1183A
1N1190A
40Amp
1N1184A
1N1186A
1N1188A
1N1183A(R)
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DIODE 1N3768-R
Abstract: diode 1N1188 1N1184 1N1184R 1N1186 1N1186R 1N1188 1N1188R 1N1190 1N3766
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 2007. INCH-POUND MIL-PRF-19500/297G 25 July 2007 SUPERSEDING MIL-PRF-19500/297F 19 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/297G
MIL-PRF-19500/297F
1N1184,
1N1186,
1N1188,
1N1190,
1N3766,
1N3768,
1N1184R,
1N1186R,
DIODE 1N3768-R
diode 1N1188
1N1184
1N1184R
1N1186
1N1186R
1N1188
1N1188R
1N1190
1N3766
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vqe 24 d
Abstract: VQE 24 vqe 24 e JANTXV 1N1186 datasheet VQE 13 diode 1N3766R VQE 12 we vqe 24 d datasheet cd 4011 free 1N1188
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 November 1999. INCH-POUND MIL-PRF-19500/297C 4 August 1999 SUPERSEDING MIL-S-19500/297B 30 Mar 1989 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/297C
MIL-S-19500/297B
1N1184,
1N1186,
1N1188,
1N1190,
1N3766,
1N3768,
1N1184R,
1N1186R,
vqe 24 d
VQE 24
vqe 24 e
JANTXV 1N1186 datasheet
VQE 13
diode 1N3766R
VQE 12
we vqe 24 d
datasheet cd 4011 free
1N1188
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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Untitled
Abstract: No abstract text available
Text: 1N1183 thru 1N1187R Silicon Standard Recovery Diode VRRM = 50 V - 300 V IF = 35 A Features • High Surge Capability • Types from 50 to 300 V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.
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1N1183
1N1187R
1N1183
1N1184
1N1186
1N1187
DO-203AB)
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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Untitled
Abstract: No abstract text available
Text: 1N1183 thru 1N1187R Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 35 A Features • High Surge Capability • Types up to 1000 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.
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1N1183
1N1187R
1N1183
1N1184
1N1186
1N1187
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1N1188A
Abstract: No abstract text available
Text: 1N1183A thru 1N1190AR Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF = 40 A Features • High Surge Capability • Types up to 600 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.
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1N1183A
1N1190AR
1N1184A
1N1186A
1N1188A
1N1190A
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cp4071
Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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68B09
SN74ALS04BN
SN74ALS08N
SN74ALS00AN
CA3046
uA733
LM311P
LM318
CA3094
78H05
cp4071
data sheet IC 7408
2N4891
IC 7408
MDA970A2
MDA2500
1854-0071
MDA2502
2N4342
IC TTL 7400
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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Untitled
Abstract: No abstract text available
Text: 1N1183A thru 1N1190AR Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF = 40 A Features • High Surge Capability • Types up to 600 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.
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1N1183A
1N1190AR
1N1184A
1N1186A
1N1188A
1N1190A
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DIODE 1n1183
Abstract: No abstract text available
Text: 1N1183 thru 1N1187R Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 35 A Features • High Surge Capability • Types up to 1000 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.
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1N1183
1N1187R
1N1183
1N1184
1N1186
1N1187
DIODE 1n1183
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1N2155
Abstract: 1N249B 1N3785 1N1184 1N3786 1N3899 1N4529 1N1183A 1N1191A 1N1195A
Text: DIODE TRANSISTOR CQ,1HIC. | RECTIFIERS 20 TO 40A AMPERES JEOEC 1N248B50B 1N 1195A - 1N2154* I N 5332 1N4529* 1N1183A- 30 90A 1N38993903 1N3909* 13 1N320814 98A 60 20 25 35 35 40 20 30 20 150 145 140 115 150 100 100 110 S P E C IF IC A T IO N S IFM AV Max. average forward
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515TQR
1N248B-
1N1195A-
1N2154-
1N4529-
1N1183A-
1N3899-
1N3909-
1N3208-
1N248B
1N2155
1N249B
1N3785
1N1184
1N3786
1N3899
1N4529
1N1183A
1N1191A
1N1195A
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transistor 123
Abstract: IN376 diode 1N1188 1N249B diode 1N1184 1N248B 1N5332 1N1184 A65 DIODE 1N1191A
Text: DIODE TRANSISTOR CO INC SflMfl35E D D Q D l ^ j l D1QDE TRàni515TQR CQ.il\IC. RECTIFIERS 20 TO 40A AMPERES JEDEC 1N248B50B 1N 1195A- 1 N 2 1 5 4 - } £ ¡3 7 6 5 -6 8 1 N 4 5 2 9 - IFM AV Max. average forward current (1 phase opera tion) (A) @TC =(*C )
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1N248B-SOB
1N1195A-
1N2154.
iN3765-68
1N3S99-
1N3909
1N5332
1N3208-14
1N248B
1N1191A
transistor 123
IN376
diode 1N1188
1N249B
diode 1N1184
1N5332
1N1184
A65 DIODE
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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a44e
Abstract: diode ge a40f A45A 1N3909-13 A44M A139 A45E A45M A44B A44A
Text: RECTIFIERS 20 TO 25 AMPERES 1N 248& 50B JEO EC 1N 1195 A98A 1N215460 - GE T Y P E 1N1183-90 1N3765-68 1N5332 1N452930 - 1N1183A90A - 1N390913 1N320814 - - A 40F A 44F 1N38993903 A139 S P E C IF IC A T IO N S *FM A V Max. average forward current (1 phase oper
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1N248B-50B
1N1195A-98
1N2154-60
1N3765-68
1N5332
1N4529-30
1N1183A-90A
1N3899-3903
1N3909-13
1N3208-14
a44e
diode ge a40f
A45A
A44M
A139
A45E
A45M
A44B
A44A
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varo r634
Abstract: SSIE1440 varo diode ssie1240 Varo r624 siemens ssie1440 R622 VARO SSIE1140 R628 SSIE1230
Text: SILICON RECTIFIERS, UNDER 1 kV Item Number •o Part Number Manufacturer V VF IR IF Max RRM •FSM Max A 00 (A) 00 @ Test 25 °C @ (A) (A) IR VR Test M T2 @ Test (A) c r> Toper Package Style Max (°C) G n ral-Purp se, lo >= 25 A (Cont'd) . . . . 5 -10 .
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FB3504
RA354
35SP04
DD716
ST4-40
NCR35-400
1N4526
1N1188
D4055W
TRA1130
varo r634
SSIE1440
varo diode
ssie1240
Varo r624
siemens ssie1440
R622 VARO
SSIE1140
R628
SSIE1230
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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TO-208AA
Abstract: DO-203AB TO208AA scr 16RIA100 DO-205AA DO-8 diode 70HFR60 ST300C12C0 70HFR120 TO208AC scr 106-1
Text: 2015-2012:QuarkCatalogTempNew 9/20/12 5:44 PM Page 2015 25 Diodes, Thyristors and Insulated Gate Bipolar Transistors IGBT 80-90 Amp RoHS DO-203AB (DO-5) INT-A-Pak VFM @ 25°C VRRM @ TC (°C) Package EACH 70079025 70078671 70078674 70078774 70078771 70078775
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DO-204AR
O-247AC
DO-203AB
80SQ045
80EPS12PBF
TO-208AA
DO-203AB
TO208AA
scr 16RIA100
DO-205AA DO-8
diode 70HFR60
ST300C12C0
70HFR120
TO208AC
scr 106-1
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