DIODE 1N5620 Search Results

DIODE 1N5620 Result Highlights (5)

Part	Manufacturer	Description
CUZ24V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 24 V, USC
XCUZ13V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 13.0 V, USC
XCUZ36V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 36.0 V, USC
CUZ12V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, USC
MUZ5V6	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 5.6 V, USM

DIODE 1N5620 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
OZ 9983 Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —	Original	PDF	MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
1N5622 Abstract: 1N5614 microsemi 1n5620 1N5614 JANTX 1N5614US 1N5616 1N5618 1N5620 1N5622US 1N5614 MICROSEMI Text: 1N5614 thru 1N5622 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “standard recovery” rectifier diode series is military qualified to MIL-PRF19500/427 and is ideal for high-reliability applications where a failure cannot be	Original	PDF	1N5614 1N5622 MIL-PRF19500/427 1N5614US 1N5622US) 1N5614 1N5622 microsemi 1n5620 1N5614 JANTX 1N5616 1N5618 1N5620 1N5622US 1N5614 MICROSEMI
diode 1N5614 Abstract: 1N5614 MICROSEMI microsemi 1n5620 Text: 1N5614 thru 1N5622 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “standard recovery” rectifier diode series is military qualified to MIL-PRF19500/427 and is ideal for high-reliability applications where a failure cannot be	Original	PDF	1N5614 1N5622 MIL-PRF19500/427 1N5614US 1N5622US) 1N5614 1N5622 diode 1N5614 1N5614 MICROSEMI microsemi 1n5620
1n5822 trr Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay	Original	PDF	MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
mur1650 Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and	Original	PDF	MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
FE16B Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —	Original	PDF	MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Untitled Abstract: No abstract text available Text: 1N5614 thru 1N5622 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARAN CE This “standard recovery” rectifier diode series is military qualified to MIL-PRF19500/427 and is ideal for high-reliability applications where a failure cannot be	Original	PDF	1N5614 1N5622 MIL-PRF19500/427 1N5614US 1N5622US) 1N5614
Untitled Abstract: No abstract text available Text: 1N5614US thru 1N5622US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “standard recovery” surface mount rectifier diode series is military qualified to MILPRF-19500/427 and is ideal for high-reliability applications where a failure cannot be	Original	PDF	1N5614US 1N5622US MILPRF-19500/427 1N5614 1N5622) 1N5614US
1N5622 JANTXV Abstract: No abstract text available Text: 1N5614US thru 1N5622US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “standard recovery” surface mount rectifier diode series is military qualified to MIL-PRF-19500/427 and is ideal for high-reliability applications where a failure	Original	PDF	1N5614US 1N5622US MIL-PRF-19500/427 1N5614 1N5622) 1N5614US 1N5622US 1N5622 JANTXV
1N3613 Abstract: 1N3611 1N3612 1N3614 1N3957 1N5614 1N5616 1N5618 1N5620 JANTX 1N3613 Text: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 17 May 2010. MIL-PRF-19500/228N 16 February 2010 SUPERSEDING MIL-PRF-19500/228M 31 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER,	Original	PDF	MIL-PRF-19500/228N MIL-PRF-19500/228M 1N3611, 1N3612, 1N3613, 1N3614, 1N3957, 1N5614, 1N5616, 1N5618, 1N3613 1N3611 1N3612 1N3614 1N3957 1N5614 1N5616 1N5618 1N5620 JANTX 1N3613
diode 1N4383 Abstract: 1N5618US JANTXV JANTX, JX, JAN 1N5614 1N5614US 1N5616 1N5616US 1N5618 1N5618US 1N5620 Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 March 2009. MIL-PRF-19500/427M 18 February 2009 SUPERSEDING MIL-PRF-19500/427L 15 October 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,	Original	PDF	MIL-PRF-19500/427M MIL-PRF-19500/427L 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614US, 1N5616US, 1N5618US, diode 1N4383 1N5618US JANTXV JANTX, JX, JAN 1N5614 1N5614US 1N5616 1N5616US 1N5618 1N5618US 1N5620
Untitled Abstract: No abstract text available Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 August 2013. INCH-POUND MIL-PRF-19500/286K 24 May 2013 SUPERSEDING MIL-PRF-19500/286J 28 October 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,	Original	PDF	MIL-PRF-19500/286K MIL-PRF-19500/286J 1N4245 1N4249, 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 MIL-PRF-19500/427.
marking Eg1 Abstract: 286E JANTX 1N4249 1N4245 1N4249 1N5614 1N5616 1N5618 1N5620 1N5622 Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 3 January 2003. MIL-PRF-19500/286F 3 October 2002 SUPERSEDING MIL-S-19500/286E 27 July 1994 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER	Original	PDF	MIL-PRF-19500/286F MIL-S-19500/286E 1N4245 1N4249, 1N4245EG1 1N4249EG1, 1N5614, 1N5616, 1N5618, 1N5620, marking Eg1 286E JANTX 1N4249 1N4249 1N5614 1N5616 1N5618 1N5620 1N5622
Untitled Abstract: No abstract text available Text: DIGITRON SEMICONDUCTORS 1N5614 – 1N5622 DIODE STANDARD RECOVERY RECTIFIER 2.0A, 200-1000V MAXIMUM RATINGS Rating Value Thermal resistance 38°C/W junction to lead at 3/8” lead length from body Thermal impedance 4.5°C/W @ 10ms heating time Average rectified forward current	Original	PDF	1N5614 1N5622 00-1000V MIL-PRF-19500,

1N3611 Abstract: No abstract text available Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 July 2013. INCH-POUND MIL-PRF-19500/228R 26 April 2013 SUPERSEDING MIL-PRF-19500/228P 26 October 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER,	Original	PDF	MIL-PRF-19500/228R MIL-PRF-19500/228P 1N3611, 1N3612, 1N3613, 1N3614, 1N3957, 1N5614, 1N5616, 1N5618, 1N3611
MR2835S equivalent Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected	Original	PDF	MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
equivalent components of diode 1N5399 Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected	Original	PDF	MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
1N1743 Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465 Text: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART Containing all JE D E C registered Zener diodes. This popular reference chart contains highlight information on all JE D E C registered Zener diode and rectifier types as well as Microsemi types. The following Codes are used:	OCR Scan	PDF	1N225 1N2260) 1N227 1N228 1N229 1N230O) 1N231d) 1N232 BZX83 BZX97 1N1743 IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
S2M diode Abstract: diode S6M diode s2m IN5622 1N5614 JANTX IN5618 DIODE in5616 1N5614 1N5616 1N5618 Text: SEHTECH CORP SfiE D 1N5614 1N5616 1N5618 S2M S4M S6M 1N5622 SOM • 013^13^ OODBbSO ATS * S E T STANDARD RECOVERY QUICK REFERENCE AXIALLEADED HERMETICALLY SEALED DATA STANDARD RECOVERY RECTIFIER DIODE • Vr • If • trr • Vf = 200 - 1000V = 2.0A = 2 i.S	OCR Scan	PDF	1N5614 1N5616 1N5618 1N5620 1N5622 DS-047 S2M diode diode S6M diode s2m IN5622 1N5614 JANTX IN5618 DIODE in5616
X200SG Abstract: Z100SG 1N6521U Text: QUICK SELECTION GUIDE Part No. Vrwm Volts l°(A) (55°C) Trr (ns) DISCRETE RECTIFIER DIODE 1N5415 50 5.000 150 150 1N5416 100 5.000 1N5615 200 1.500 150 1N5614 200 1.500 2000 1N5417 200 5.000 150 1N5550 200 5.000 2000 1N5617 1.500 150 400 1N5616 400 1.500 2000	OCR Scan	PDF	M50FF3 M50FF5 1N6533 M50UFG M50FG M50SG X50FF3 X50FF5 1N6525 X50UFG X200SG Z100SG 1N6521U
Untitled Abstract: No abstract text available Text: 1N 5614 thru 1N 5622 MicmemiCorp. ☆JANS* $ The diode e xp e <ts SANTA ANA, CA F o r m o re in fo rm a tio n call: 714 979-8220 FEATURES MILITARY RECTIFIERS • MICROM INIATURE PACKAGE • VOIDLESS HERMETICALLY SEALED G LASS PACKAGE • TRIPLE LAYER PASSIVATION	OCR Scan	PDF	MIL-S-19500/427 100-C, 750mA,
JAN1N5618 Abstract: N5618 1N5614 1N5616 1N5620 1N5622 394II JAN1N5620 JAN1N5616 Text: 1N5614 thru 1N5622 Microsemi Corp. ' The diode experts ☆JA N S* SANTA A N A , CA F o r m o r e i n f o r m a ti o n call: 714 9 7 9 -8 2 2 0 FE A TU R E S MILITARY RECTIFIERS • M ICRO M INIATURE PACKAGE • VO IDLESS HERMETICALLY SEALED G LA SS PACKAGE	OCR Scan	PDF	1N5614 1N5622 MIL-S-19500/427 JAN1N5618 N5618 1N5616 1N5620 1N5622 394II JAN1N5620 JAN1N5616
fagor fbu4 bridge rectifier Abstract: diode zener 600v 1a ZENER DIODE 5K diode bridge 2A 3ZX35C Zener Diode 3A zener diode 5A RGP10 diode RGP30 Diode bridge 600V 0.8A Text: FA G O R^ End Applications AUTOMOTIVE END APPLICATION If DEVICES USED DEVICE TYPE ALTERNATOR 3A B Y250,1N 5400, 1N5620GP G eneral Purpose Rectifier POWER STEERING 3A GP30 AM BAG 1A 1N4000GP, ESI 5KP Transient V oltage Suppressor INSTRUMENT PANEL 5KW 1A GP10, FS1	OCR Scan	PDF	1N5620GP 1N4000GP, 1N53S0, 1N5400, BZX85C 5390G BY39G, C1500R, 3ZX35C, fagor fbu4 bridge rectifier diode zener 600v 1a ZENER DIODE 5K diode bridge 2A 3ZX35C Zener Diode 3A zener diode 5A RGP10 diode RGP30 Diode bridge 600V 0.8A
TRANSISTOR J 5804 NPN Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621 Text: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV	OCR Scan	PDF	1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, 1N5767 1N5802 1N5802, 1N5804, TRANSISTOR J 5804 NPN TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621

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DIODE 1N5620 Search Results

DIODE 1N5620 Result Highlights (5)

DIODE 1N5620 Datasheets Context Search

OZ 9983

1N5622

diode 1N5614

1n5822 trr

mur1650

FE16B

Untitled

Untitled

1N5622 JANTXV

1N3613

diode 1N4383

Untitled

marking Eg1

Untitled

1N3611

MR2835S equivalent

equivalent components of diode 1N5399

1N1743

S2M diode

X200SG

Untitled

JAN1N5618

fagor fbu4 bridge rectifier

TRANSISTOR J 5804 NPN