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    DIODE 1NS4 Search Results

    DIODE 1NS4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 1NS4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    1N5450A

    Abstract: MV1644 MV1624 MV1636 MV1641 1N5140 1N5470A
    Text: •MOTOROLA SC -CDIODES/OPTO} 636.7255 MOTOROLA 34 SC DET|b3b?5S5 <D I O D E S / O P T O 34C 003ai0D t | ~ 38100 D 1—I f ' SILICON TUNING DIODE DICE continued) 1C5139 DIE NO. — SERIES LINE SOURCE — DV61 This die provides performance equal to or better than that of


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    PDF 003ai0D 1C5139 1N5139 1N5140 1N5141 1N5142 1N5143 1N5144 1N5145 1N5146 1N5450A MV1644 MV1624 MV1636 MV1641 1N5470A

    diode SG22

    Abstract: 1N918 1N400 diode 1N5317 1N69B 1N919 1N849 1N673 1N688 1N4141
    Text: 3869720 G E N E R A L D IO D E CORP 86D 0 0 3 3 8 GENERAL DIODE CORP flb T - D E l B û b T O D DD0D33fl 3 1 T àl-à7 SILIC O N D IO D ES . . . cont’d Case Style — DO-7 'il % 9& <h r« yi o ° o TYPE 1N4B2A 1N4S3 1N463A 1N464 1N4B4A Ç90 ïO cl 30 30


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    PDF DDDD33fl 1N462A 1N463A 1N464 1N482 1N482A 1N482B 1N483 1N483A 1N483B* diode SG22 1N918 1N400 diode 1N5317 1N69B 1N919 1N849 1N673 1N688 1N4141

    1NS14

    Abstract: 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A
    Text: m s ü H ERMETICALLY S E A L E D elect: ABRUPT - HYPERABRUPT Uf G L A S S P A C K A G ED TUNING D IO D ES ELE C T R IC A L CHARACTERISTICS T a = 25° C unle« otherwise noted Diode Cap (CT)* •M0% M V /1 MH/ G EN ER AL LO W IN D U C T A N C E M IN IA T U R E G L A S S


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    PDF SQ1213A MV83Z MV833 MVB34 MV835 MVS36 MV837 MV838 MVB40 1NS14 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A

    1N5450A

    Abstract: No abstract text available
    Text: SILICON EPICAP DIODES 1N5441A, B . . . epitaxial passivated abrupt junction tuning diodes designed for elec­ tronic tuning, FM, AFC and harmonic-generation applications in AM through UHF ranges, providing solid-state reliability to replace mechanical tuning


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    PDF 1N5441A, 1N5456A, DO-204AA) 1NS456A, 1N5450A

    Marcon capacitor Co

    Abstract: CACFM D1N54 2SC3279 equivalent 2SK1112 CACFM 1A220M Marcon 2SC3279 41178 8436
    Text: Contents Features . 1 Applications. 1 Block d ia g ra m . 1 Pin A s s ig n m e n t. ; .


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    PDF RCH855 47//H) 2SK1112* /50mA 2SK1112. Marcon capacitor Co CACFM D1N54 2SC3279 equivalent 2SK1112 CACFM 1A220M Marcon 2SC3279 41178 8436

    IN5148

    Abstract: IN5139 IN5476 IN5441A IN546 1n5441 1N5461 1N5462 IN5456A IN5461A
    Text: ALPHA IND/ SEMI CONDUCTOR 4ÔE D • DSÛ5443 DDD1 3 DS b07 ■ ALP VHF-UHF Abrupt Tuning Diodes Features ■ ■ ■ ■ ■ ■ High Q Large Tuning Range Standard Capacitance Tolerances -1 0 % , 5%, 2% Computer Matched for Tracking optional Low Leakage Current


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    PDF DDD13DS MIL-STD-750 IN5461A IN5476A IN5441A IN5456A IN5139 IN5148 1N5453 1NS454 IN5148 IN5476 IN546 1n5441 1N5461 1N5462

    G603A

    Abstract: S0171 DIODE 1N54 HA1930A 1N547S 10YD 1N5470A G605A GDE 6A SQ1213A
    Text: U S I ELECTRONICS INC 3SE £ E3 SbSbMbb 0 0 0 0 3 6 b T BU SI T -07-/7 - D « a D elect HERM ETICALLY S E A LE D G L A S S P A CK A G ED TUNING D IO D ES A BRU PT - H YPER A B R U PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted


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    PDF 000036b T-07-19 C2/C20 C2/C30 C4/C25 SQ1213A G702A SQ1214A G603A S0171 DIODE 1N54 HA1930A 1N547S 10YD 1N5470A G605A GDE 6A

    IN5448A

    Abstract: 23128 1N54G 24128 S0MC 1N514C ha1822 ha11l1 MVI652 MV1620
    Text: D & IS D HERM ETICALLY S E A L E D elect: A B R U P T - H Y P E R A B R U P T U» G L A S S P A C K A G ED TUNING D IO D ES E L E C T R IC A L C H A R A C T E R IS T IC S <Ta = 25» C unless otherwise noted LOW INDUCTANCE FOR USE TO 2 .5 GHz GENERAL APPLICATIONS


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    PDF C2/C20 MV1620 VI824 MVI124 MV1I32 MV1I34 VI136 MV1842 MV1I58 C3/C28 IN5448A 23128 1N54G 24128 S0MC 1N514C ha1822 ha11l1 MVI652

    1N5139

    Abstract: 1n4790a 1N5470A 1N5689A 1N5698A 1N5141 1N5143 1N5147 1N5697A 1N5699A
    Text: C O M SEMICONDUCTOR INC 2TE D 177SM7D DDGObSS 1 B1C0DI V oltage-V ariable C a p a c ita n c e Timing D iodes CODI's voltage variable capacitor (W C ) product line is one of the broadest, h ig h -q u a lity lines in the industry. COOI offers W C s with low leakage, ultra - high Q, high reverse


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    PDF 177SM7D VVC3325 VVC3314 VVC3326 VVC3327 VVC3328 VVC3329 VVC3330 VVC3331 VVC3332 1N5139 1n4790a 1N5470A 1N5689A 1N5698A 1N5141 1N5143 1N5147 1N5697A 1N5699A

    Untitled

    Abstract: No abstract text available
    Text: Glass passivated rectifier diodes. 1 Amp. to 3 Amps. The plastic material carries U/L recognition 94V-0. Maximum Average Max.Recurrent Repetitive Peak Forward Forward Rectified Reverse T Y PE Current Current Voltage If av Ta V rrm I fr m (A) Axial Lead | S.M.D.


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    PDF 4007G BY133G 1N5391G/GNOA DO-41/SMA 1N5391G 1NS392G 1NS393G 1NS394G 1NS39SG 1N5396G

    1NS14

    Abstract: ir0004 1M11A S01217A HA1I34A SQ1214A SQ1215A 2S0 765 MV18S VI634
    Text: C Æ ISO elect HERMETICALLY SEALED G L A S S PA C K A G ED TUNING DIO DES A B R U P T - H Y P E R A B R U P T Uf E L E C T R IC A L CH A R A CTER ISTICS T a = 25» C unless otherwise noted GENERAL APPLICATIONS Otode Cap. (CT)* £10% 94V/1 MHi TYPE Pf NO


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    PDF C2/C20 C2/C30 50MHI C4/C25 S01213A SQ1214A SQ1215A S01715 1NS14 ir0004 1M11A S01217A HA1I34A 2S0 765 MV18S VI634

    HA1120

    Abstract: 1n9448 1NS471A diodo 216 diodo 2B 1n6449a IN5144 G702A S01718 DIODO 10 W
    Text: D & IS D elect HERM ETICALLY S EA LED G L A S S P A C K A G E D TU N IN G D IO D ES A B R U PT - H Y PER A B R U P T Ul E L E C T R IC A L CH A RACTERISTICS <Ta = 25» C unless otherwise noted 6ENERAL APPLICATIONS Otode Cap. CT)* ÌT1ON04V/1 MHz TYPE Pf


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    PDF C2/C20 C2/C10 C2/C30 50MHi SQ1213A G702A SQ1214A sai21 C20/pf HA1120 1n9448 1NS471A diodo 216 diodo 2B 1n6449a IN5144 S01718 DIODO 10 W

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


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    PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17

    2u20 diode

    Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
    Text: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors


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    PDF 1-800-232-CODI 1N6003B 1N6004B 1N6005B 1N6006B 1N6007B 1N6008B 1N6009B 1N6010B 1N6011B 2u20 diode 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218

    DIODE 1Ns4

    Abstract: 1Ns4 S2VB10
    Text: RECTIFIER DIODES SHINDENGEN ELECTRIC MFG 3SE J> • 021^307 000000e] T 3 Phase Bridge Diodes HB iB M fi * Ê ft Absolute Maximum Ratings ía V rm Type No. [V ] S10VT60 / [A ] Tc [• c] I0 137 600 80 800 S16VT60 600 80 800 CO o S 2 0 V T 6 0 /- [A ] 170 Tj


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    PDF 000000e S10VT60 S16VT60 S30SC3 S60SC4M 15HAX DIODE 1Ns4 1Ns4 S2VB10

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    KL SN 102 94v-0

    Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
    Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results


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