BAP64-04W
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP64-04W Silicon PIN diode Preliminary specification 2000 May 24 Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-04W PINNING FEATURES • High voltage, current controlled PIN DESCRIPTION
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M3D102
BAP64-04W
OT323
BAP64-04W
MAM434
OT323)
125004/04/pp8
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIODE MODULES RM500DZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM500DZ/UZ-M,-H,-24,-2H Average forward current . 500A Repetitive peak reverse voltage . 400/800/1200/1600V • DOUBLE ARMS • Insulated Type No t
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RM500DZ/UZ-M
400/800/1200/1600V
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIODE MODULES RM75TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM75TC-M,-H,-24,-2H DC output current . 150A Repetitive peak reverse voltage . 400/800/1200/1600V • 3 phase bridge • Insulated Type • UL Recognized
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RM75TC-M
400/800/1200/1600V
E80276
E80271
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PDF
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k2a2
Abstract: No abstract text available
Text: MITSUBISHI DIODE MODULES RM500DZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM500DZ/UZ-M,-H,-24,-2H Average forward current . 500A Repetitive peak reverse voltage . 400/800/1200/1600V • DOUBLE ARMS • Insulated Type No t
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Original
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RM500DZ/UZ-M
400/800/1200/1600V
k2a2
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIODE MODULES RM75TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM75TC-M,-H,-24,-2H DC output current . 150A Repetitive peak reverse voltage . 400/800/1200/1600V • 3 phase bridge • Insulated Type • UL Recognized
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Original
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RM75TC-M
400/800/1200/1600V
E80276
E80271
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PDF
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RM500HA-M
Abstract: No abstract text available
Text: MITSUBISHI DIODE MODULES RM500HA-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM500HA-M,-H,-24,-2H • IF AV • VRRM Average forward current . 500A Repetitive peak reverse voltage . 400/800/1200/1600V • ONE ARM • Insulated Type
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RM500HA-M
400/800/1200/1600V
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PDF
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RM75TC-M
Abstract: E80276
Text: MITSUBISHI DIODE MODULES RM75TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM75TC-M,-H,-24,-2H • IO • VRRM DC output current . 150A Repetitive peak reverse voltage . 400/800/1200/1600V • 3 phase bridge • Insulated Type
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Original
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RM75TC-M
400/800/1200/1600V
E80276
E80271
E80276
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PDF
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DIODE smd marking A4t
Abstract: marking A4t sot23 smd a4t smd marking code A4t A4t smd diode a4t A4T SOT23 smd A4t SOT23 smd code A4p smd diode A4T
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV70 High-speed double diode Product specification Supersedes data of 1997 Nov 24 1999 May 05 Philips Semiconductors Product specification High-speed double diode BAV70 FEATURES DESCRIPTION • Small plastic SMD package
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Original
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M3D088
BAV70
BAV70
115002/00/04/pp12
DIODE smd marking A4t
marking A4t sot23
smd a4t
smd marking code A4t
A4t smd
diode a4t
A4T SOT23
smd A4t SOT23
smd code A4p
smd diode A4T
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIODE MODULES RM500DZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM500DZ/UZ-M,-H,-24,-2H • IF AV • VRRM Average forward current . 500A Repetitive peak reverse voltage . 400/800/1200/1600V • DOUBLE ARMS • Insulated Type
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RM500DZ/UZ-M
400/800/1200/1600V
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PDF
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phase ac motor reverse forward electrical diagram
Abstract: No abstract text available
Text: MITSUBISHI DIODE MODULES RM500DZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM500DZ/UZ-M,-H,-24,-2H • IF AV • VRRM Average forward current . 800A Repetitive peak reverse voltage . 400/800/1200/1600V • DOUBLE ARMS • Insulated Type
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Original
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RM500DZ/UZ-M
400/800/1200/1600V
phase ac motor reverse forward electrical diagram
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PDF
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APT100S20B
Abstract: APT20M20LLL Microsemi Avalanche 200v
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode APT100S20B 200V 120A 1 2 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Soft Recovery Characteristics • Low Losses
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Original
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APT100S20B
O-247
APT100S20B
APT20M20LLL
Microsemi Avalanche 200v
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PDF
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APT20M36BLL
Abstract: APT30D20B APT30D20S
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT30D20B APT30D20S 200V 200V 30A 30A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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Original
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APT30D20B
APT30D20S
O-247
APT20M36BLL
APT30D20B
APT30D20S
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode APT30S20B 200V 30A 1 2 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics
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Original
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APT30S20B
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT30D40B APT30D40S 400V 400V 30A 30A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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APT30D40B
APT30D40S
O-247
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PDF
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APT15DQ60B
Abstract: APT15DQ60S APT6017LLL
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode APT15DQ60B APT15DQ60S D3PAK 1 2 600V 600V 15A 15A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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Original
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APT15DQ60B
APT15DQ60S
O-247
APT15DQ60B
APT15DQ60S
APT6017LLL
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT30D40B APT30D40S 400V 400V 30A 30A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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Original
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APT30D40B
APT30D40S
O-247
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PDF
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APT30M30LLL
Abstract: APT60D40B APT60D40S
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT60D40B APT60D40S 400V 400V 60A 60A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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Original
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APT60D40B
APT60D40S
O-247
APT30M30LLL
APT60D40B
APT60D40S
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT15D60B APT15D60S 600V 600V 15A 15A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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Original
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APT15D60B
APT15D60S
O-247
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PDF
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D 819
Abstract: No abstract text available
Text: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V
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OCR Scan
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12N100U1
12N100AU1
24SBSC
T0-247
D 819
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PDF
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SMD SOT23 a41
Abstract: smd code A4p a41 smd diode smd A4p A4p smd sot23 a4p
Text: DISCRETE SEMICONDUCTORS [Mm SMEET BAV70 High-speed double diode 1999 May 05 Product specification Supersedes data of 1997 Nov 24 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed double diode BAV70 FEATURES DESCRIPTION
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OCR Scan
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BAV70
BAV70
SCA64
5002/00/04/pp1
SMD SOT23 a41
smd code A4p
a41 smd diode
smd A4p
A4p smd
sot23 a4p
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PDF
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Untitled
Abstract: No abstract text available
Text: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C
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OCR Scan
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12N100U1
12N100AU1
O-247
IXGH12N100U1
IXGH12N100AU1
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PDF
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Untitled
Abstract: No abstract text available
Text: IXGH 12N100U1 IXGH 12N100AU1 Low VCE sat IGBT with Diode High Speed IGBT with Diode VCES ^C25 V ¥ CE(sat) 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V TO-247 SMD* E Symbol Test Conditions v CES VcOR Td = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 M H VGES v SBB
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OCR Scan
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12N100U1
12N100AU1
O-247
O-247
-247S
12N100
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIODE MODULES RM500DZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM500DZ/UZ-M,-H,-24,-2H Average forward current 800A Repetitive peak reverse voltage . 400/800/1200/1600V • DOUBLEARMS • Insulated Type • If AV • V rrm
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OCR Scan
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RM500DZ/UZ-M
400/800/1200/1600V
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIODE MODULES RM500HA-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM500HA-M,-H,-24,-2H Average forward current 500A Repetitive peak reverse voltage . 400/800/1200/1600V • ONE ARM • Insulated Type • If AV • V rrm APPLICATION
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OCR Scan
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RM500HA-M
400/800/1200/1600V
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PDF
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