25518I
Abstract: No abstract text available
Text: MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM V 1300 1500 1700 1900 V 1200 1400 1600 1800 ITRMS = 2x 450 A 2x 250 A ITAVM = VRRM = 1200-1800 V 3 Type 7 6 2 MCC 255-12io1 MCC 255-14io1 MCC 255-16io1 MCC 255-18io1 MCD 255-12io1
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255-12io1
255-14io1
255-16io1
255-18io1
E72873
20130813c
25518I
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Untitled
Abstract: No abstract text available
Text: MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM V 1300 1500 1700 1900 V 1200 1400 1600 1800 ITRMS = 2x 450 A 2x 250 A ITAVM = VRRM = 1200-1800 V 3 Type 7 6 2 MCC 255-12io1 MCC 255-14io1 MCC 255-16io1 MCC 255-18io1 MCD 255-12io1
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255-12io1
255-14io1
255-16io1
255-18io1
E72873
20130409b
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PDF
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thyristor 250A
Abstract: thyristor 450A
Text: MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM V 1300 1500 1700 1900 V 1200 1400 1600 1800 ITRMS = 2x 450 A 2x 250 A ITAVM = VRRM = 1200-1800 V 3 Type 7 6 2 MCC 255-12io1 MCC 255-14io1 MCC 255-16io1 MCC 255-18io1 MCD 255-12io1
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200-1800V
255-12io1
255-14io1
255-16io1
255-18io1
E72873
thyristor 250A
thyristor 450A
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Untitled
Abstract: No abstract text available
Text: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type 1 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;
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255-12N1
255-14N1
255-16N1
255-18N1
255-20N1
255-22N1
E72873
20130813g
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PDF
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Untitled
Abstract: No abstract text available
Text: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type 1 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;
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Original
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255-12N1
255-14N1
255-16N1
255-18N1
255-20N1
255-22N1
200-2200V
E72873
20121206e
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PDF
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Untitled
Abstract: No abstract text available
Text: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type 1 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;
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255-12N1
255-14N1
255-16N1
255-18N1
255-20N1
255-22N1
E72873
20130409f
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PDF
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ZY180L
Abstract: diode b6 k 450 25518I ixys mcc 255
Text: MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x 450 A ITAVM = 2x 250 A VRRM = 1200-1800 V 3 VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Type MCC MCC MCC MCC 255-12io1 255-14io1 255-16io1 255-18io1 Symbol Test Conditions
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Original
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255-12io1
255-14io1
255-16io1
255-18io1
ZY180L
diode b6 k 450
25518I
ixys mcc 255
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PDF
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diode b6 k 450
Abstract: No abstract text available
Text: MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x 450 A ITAVM = 2x 250 A VRRM = 1200-1800 V 3 VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Type MCC MCC MCC MCC 255-12io1 255-14io1 255-16io1 255-18io1 Symbol Test Conditions
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Original
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255-12io1
255-14io1
255-16io1
255-18io1
diode b6 k 450
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x 450 A ITAVM = 2x 250 A VRRM = 1200-1800 V 3 VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Type MCC MCC MCC MCC 255-12io1 255-14io1 255-16io1 255-18io1 Symbol Test Conditions
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Original
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255-12io1
255-14io1
255-16io1
255-18io1
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PDF
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PSKT 255
Abstract: No abstract text available
Text: PSKT 255 PSKH 255 Thyristor Modules Thyristor/Diode Modules ITRMS ITAVM VRRM = 2x 450 A = 2x 250 A = 1200-1800 V Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 3 Type PSKT PSKT PSKT PSKT 2 255-12io1 255-14io1 255-16io1
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255-12io1
255-14io1
255-16io1
255-18io1
PSKT 255
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PDF
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BY 255 diode
Abstract: DIODE BY 255 rectifier diode do-201 diode do-201
Text: BY 251.BY 255 Type Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage IF = - A IR = - A IRR = - A Axial lead diode Standard silicon rectifier diodes BY 251.BY 255 Forward Current: 3 A Reverse Voltage: 200 to 1300 V
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DO-201
MIL-STD-750
BY 255 diode
DIODE BY 255
rectifier diode do-201
diode do-201
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THYRISTOR MODULE MCC 25
Abstract: 2x450 DIODE bridge 255
Text: Thyristor Modules Thyristor/Diode Modules MCC 255 ITRMS = 2 x 450 A MCD 255 ITAVM = 2 x 250 A VRRM = 1200 - 1800 V VRSM VDSM VRRM V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM
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255-12io1
255-14io1
255-16io1
255-18io1
THYRISTOR MODULE MCC 25
2x450
DIODE bridge 255
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LT 0216 diode
Abstract: 20/LT 0216 diode diode bridge LT 405
Text: DIXYS MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules ^TRMS ^TAVM V RRM V RSM V RRM VDSM v DRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ^TRMS’ ^FRMS T VJ - T VJM Tc = 85°C; 180° sine ^TAVM’ ^FAVM ^TSM’ ^FSM Ji2dt
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OCR Scan
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255-12io1
255-14io1
255-16io1
255-18io1
4bflb22h
GD03230
LT 0216 diode
20/LT 0216 diode
diode bridge LT 405
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PDF
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Untitled
Abstract: No abstract text available
Text: Key Parameters VRRM = 4500 IFAVM = 255 IFRMS = 400 IFSM = 5 VF0 = 2.00 rF = 3.8 VDClink = 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 03D4502 PRELIMINARY Doc. No. 5SYA 1117-02 Feb. 99 Features • Patented free-floating technology
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03D4502
CH-5600
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duraseal
Abstract: SiC IGBT High Power Modules sic wafer 100 mm Wacker Silicones 28Cu72Ag wacker 100C parallel mosfet Cree SiC MOSFET silicon carbide
Text: Performance and Reliability Characteristics of 1200 V, 100 A, 200oC Half-Bridge SiC MOSFET-JBS Diode Power Modules James D. Scofield and J. Neil Merrett Air Force Research Laboratory 1950 Fifth St WPAFB, OH 45433 937-255-5949 [email protected] James Richmond and
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200oC
duraseal
SiC IGBT High Power Modules
sic wafer 100 mm
Wacker Silicones
28Cu72Ag
wacker
100C
parallel mosfet
Cree SiC MOSFET
silicon carbide
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Diode Marking ZM Motorola
Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
Text: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:
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OCR Scan
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1SMB5913A/D
1SMB5913A,
1SMB5956A,
1SMB5913A
241Sb
C6459&
Diode Marking ZM Motorola
DIODE MOTOROLA 39A
ZENER 18-2 5t
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PDF
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COUNTER LED bcd
Abstract: CM4600 TQFN-24 LED517 14 pin mobile phone camera pinout LED09 CM4600-11QF
Text: PRELIMINARY CM4600 Single-Chip Multi-LED Driver for Cell Phones Features Product Description • The CM4600 provides all power and control for LEDs in the display backlights, keypad, auxiliary lights and camera-flash of a cell phone. • • • • • •
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CM4600
250mA
100mA,
COUNTER LED bcd
TQFN-24
LED517
14 pin mobile phone camera pinout
LED09
CM4600-11QF
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PDF
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Untitled
Abstract: No abstract text available
Text: LM95235 LM95235-Q1 www.ti.com SNIS142F – APRIL 2006 – REVISED MARCH 2013 Precision Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology Check for Samples: LM95235, LM95235-Q1 FEATURES KEY SPECIFICATIONS • • • • • •
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LM95235
LM95235-Q1
SNIS142F
LM95235,
LM95235Q
AEC-Q100
MMBT3904
65/90-nm
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PDF
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Untitled
Abstract: No abstract text available
Text: LM95235 LM95235-Q1 www.ti.com SNIS142F – APRIL 2006 – REVISED MARCH 2013 Precision Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology Check for Samples: LM95235, LM95235-Q1 FEATURES KEY SPECIFICATIONS • • • • • •
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LM95235
LM95235-Q1
SNIS142F
LM95235,
LM95235Q
AEC-Q100
MMBT3904
65/90-nm
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PDF
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pin diagram AMD sempron
Abstract: BJT with V-I characteristics AMD sempron block diagram 3300
Text: LM95235 LM95235-Q1 www.ti.com SNIS142F – APRIL 2006 – REVISED MARCH 2013 Precision Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology Check for Samples: LM95235, LM95235-Q1 FEATURES KEY SPECIFICATIONS • • • • • •
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LM95235
LM95235-Q1
SNIS142F
LM95235,
LM95235Q
AEC-Q100
MMBT3904
65/90-nm
pin diagram AMD sempron
BJT with V-I characteristics
AMD sempron block diagram 3300
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PDF
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Untitled
Abstract: No abstract text available
Text: LM95235 LM95235-Q1 www.ti.com SNIS142F – APRIL 2006 – REVISED MARCH 2013 Precision Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology Check for Samples: LM95235, LM95235-Q1 FEATURES KEY SPECIFICATIONS • • • • • •
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Original
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LM95235
LM95235-Q1
SNIS142F
LM95235,
LM95235Q
AEC-Q100
MMBT3904
65/90-nm
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PDF
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Untitled
Abstract: No abstract text available
Text: Analog Power AM4892N Dual N-Channel 150-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 150 PRODUCT SUMMARY rDS(on) (mΩ) 255 @ VGS = 10V 290 @ VGS = 4.5V ID(A) 2.3 2.2 Typical Applications:
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AM4892N
AM4892N
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PDF
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Untitled
Abstract: No abstract text available
Text: LM95235 LM95235-Q1 www.ti.com SNIS142F – APRIL 2006 – REVISED MARCH 2013 Precision Remote Diode Temperature Sensor with SMBus Interface and TruTherm Technology Check for Samples: LM95235, LM95235-Q1 FEATURES KEY SPECIFICATIONS • • • • • •
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Original
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LM95235
LM95235-Q1
SNIS142F
LM95235,
LM95235Q
AEC-Q100
MMBT3904
65/90-nm
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PDF
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Untitled
Abstract: No abstract text available
Text: Analog Power AM3463P P-Channel 60-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -60 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits
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AM3463P
AM3463P
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PDF
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