diode mur
Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
Text: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.
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GE1001,
GE1002,
GE1003,
GE1004
GE1101,
GE1102,
GE1103,
GE1104
GE1301,
GE1302,
diode mur
600V 25A Ultrafast Diode
MUR850 diode
diode 400V 4A
igbt 1000v 80a
diode 400v 2A ultrafast
igbt 200v 30a
600v 30a IGBT
30A, 600v DIODE
igbt 200V 4A
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TSC5302D
Abstract: TSC5302DCH TSC5302DCP
Text: Preliminary TSC5302D High Voltage NPN Transistor with Diode Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 800V Ic = 2A VCE SAT , = 1.0V @ Ic / Ib = 1A / 0.2A Features Ordering Information Built-in free-wheeling diode makes efficient anti
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TSC5302D
TSC5302DCH
O-251
TSC5302DCP
O-252
O-251
TS5302D
TSC5302D
TSC5302DCH
TSC5302DCP
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Untitled
Abstract: No abstract text available
Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation
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TSC5302D
O-251
O-252
TSC5302DCP
TSC5302DCH
TSC53rty
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diode D07-15
Abstract: diode d07 SOT-251 d07 15 58 TSC5302D diode D07-15 30 D07 15 diode marking b2 NPN Silicon Power Transistor DPAK NPN Transistor 1A 400V
Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation
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TSC5302D
O-251
O-252
TSC5302DCP
TSC5302DCH
diode D07-15
diode d07
SOT-251
d07 15 58
TSC5302D
diode D07-15 30
D07 15
diode marking b2
NPN Silicon Power Transistor DPAK
NPN Transistor 1A 400V
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TSC5302DCH
Abstract: TSC5302DCP DIODE G14
Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation
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TSC5302D
O-251
O-252
TSC5302DCP
TSC5302DCH
DIODE G14
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DIODE F10
Abstract: transistor C 2290 TSC5302D TSC5302DCH TSC5302DCP
Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation
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TSC5302D
O-251
O-252
DIODE F10
transistor C 2290
TSC5302D
TSC5302DCH
TSC5302DCP
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Untitled
Abstract: No abstract text available
Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation
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TSC5302D
O-251
O-252
TSC5302DCP
TSC5302DCH
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700VV
Abstract: TSC5302D halogen ballast 18BSC TSC5302DCH TSC5302DCP diode marking code 540 transistor B 540
Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation
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TSC5302D
O-251
O-252
TSC5302DCP
TSC5302DCH
700VV
TSC5302D
halogen ballast
18BSC
diode marking code 540
transistor B 540
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GP20DL
Abstract: DO-204AC
Text: ZOWIE Low VF Rectifier Diode GP20DL THRU GP20ML Low VF Rectifier Diode VF < 0.90V @IF = 2A FEATURES IFSM = 100Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop
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GP20DL
GP20ML
100Amp
DO-204AC
DO-204AC
MIL-STD-750,
300uS
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DO-204AC
Abstract: No abstract text available
Text: ZOWIE Low VF Rectifier Diode GP20DLH THRU GP20MLH Low VF Rectifier Diode VF < 0.90V @IF = 2A FEATURES IFSM = 100Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop
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GP20DLH
GP20MLH
100Amp
DO-204AC
DO-204AC
MIL-STD-750,
300uS
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STTA206S
Abstract: SMC 4A 400v diode 400v 2A ultrafast DIODE 2A 400V TRANSISTOR 45 P3
Text: STTA206S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY
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STTA206S
STTA206S
SMC 4A 400v
diode 400v 2A ultrafast
DIODE 2A 400V
TRANSISTOR 45 P3
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DI 380 Transistor
Abstract: SOD15 transistor marking p3 STTA206S diode 400v 2A ultrafast marking t51 transistor p2 marking
Text: STTA206S TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS : FREEWHEEL OR BOOSTER DIODE
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STTA206S
DI 380 Transistor
SOD15
transistor marking p3
STTA206S
diode 400v 2A ultrafast
marking t51
transistor p2 marking
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DIODE T53
Abstract: transistor marking p3 SOD15 IGBT trr igbt high frequency 1200V STTA212S DI 380 Transistor TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE DIODE marking ED diode tURBOSWITCH
Text: STTA212S TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS : FREEWHEEL OR BOOSTER DIODE
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STTA212S
DIODE T53
transistor marking p3
SOD15
IGBT trr
igbt high frequency 1200V
STTA212S
DI 380 Transistor
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
DIODE marking ED
diode tURBOSWITCH
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Untitled
Abstract: No abstract text available
Text: STTA206S TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2A V rrm 600V trr (typ) V f (max) 20ns 1.5V FEATURES AND BENEFITS • SPECIFIC TO "FREEWHEEL MODE' OPERATION: FREEWHEEL OR BOOSTER DIODE ■ ULTRA-FAST AND SOFT RECOVERY
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STTA206S
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mosfet 600v
Abstract: STTA206S DU MARKING
Text: STTA206S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS c u d SPECIFIC TO "FREEWHEEL MODE" OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY
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STTA206S
mosfet 600v
STTA206S
DU MARKING
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STTA206S
Abstract: diode 400v 2A ultrafast
Text: STTA206S TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATION: FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN
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STTA206S
STTA206S
diode 400v 2A ultrafast
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Untitled
Abstract: No abstract text available
Text: Rectiier Diode Surface Mounting Device Single Diode OUTLINE M1FE40 400V 2A • • • Unit : mm Weight : 0.027g typ. Package M1F 2.8 カソードマーク Cathode mark ① SMD E88 1.8 ＋① ②− ② ロット記号（例） Date code 品名略号 Type No.
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M1FE40
J534-1
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Untitled
Abstract: No abstract text available
Text: ZOWIE Low VF Rectifier Diode GP20DLH THRU GP20MLH Low VF Rectifier Diode VF < 0.90V @IF = 2A FEATURES IFSM = 100Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop o 2.0 Ampere operation at TA=55 C with no thermal runaway
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GP20DLH
GP20MLH
100Amp
DO-204AC
DO-204AC
MIL-STD-750,
300uS
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M1FE40
Abstract: No abstract text available
Text: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE M1FE40 Unit : mm Weight : 0.027g （typ.） Package：M1F 400V 2A 2.8 カソードマーク Cathode mark 特長 E88 ① • 小型 SMD • 耐湿性に優れ高信頼性
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M1FE40
M1FE40
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smd diode marking JC
Abstract: SMD MARKING CODE 103 SMD MARKING CODE 2A DIODE SMD 10A smd diode marking code 2a smd diode marking 2a SMD MARKING CODE 39 diode smd marking BUF SMD DIODE MARKING 14 smd diode marking ja
Text: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE M1FE40 Unit : mm Weight : 0.027g （typ.） Package：M1F 400V 2A 2.8 カソードマーク Cathode mark 特長 E88 ① • 小型 SMD • 耐湿性に優れ高信頼性
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M1FE40
J534-1
smd diode marking JC
SMD MARKING CODE 103
SMD MARKING CODE 2A
DIODE SMD 10A
smd diode marking code 2a
smd diode marking 2a
SMD MARKING CODE 39
diode smd marking BUF
SMD DIODE MARKING 14
smd diode marking ja
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GP20DL
Abstract: GP20GL GP20JL GP20KL GP20ML
Text: ZOWIE Low VF Rectifier Diode GP20DL THRU GP20ML Low VF Rectifier Diode VF < 0.90V @IF = 2A FEATURES IFSM = 100Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop o 2.0 Ampere operation at TA=55 C with no thermal runaway
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GP20DL
GP20ML
100Amp
DO-204AC
DO-204AC
MIL-STD-750,
300uS
GP20GL
GP20JL
GP20KL
GP20ML
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smd 1a 400v diode
Abstract: 14 mark code smd smd diode JC SMD diode mark smd diode code jc M1FE40 JC SMD DIODE
Text: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE M1FE40 Unit : mm Weight : 0.027g（typ.） Package：M1F 400V 2A 2.8 カソードマーク Cathode mark 特長 E88 ① • 小型 SMD • 耐湿性に優れ高信頼性
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M1FE40
smd 1a 400v diode
14 mark code smd
smd diode JC
SMD diode mark
smd diode code jc
M1FE40
JC SMD DIODE
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Untitled
Abstract: No abstract text available
Text: Rectifier Diode Surface Mounting Device Single Diode •*WfN-äsH OUTLINE DIMENSIONS Package : M1F M 1 F E Unit : mm 4 0 400V 2A + - — N— i i V - ■K v — ? Cathode m ark < 43 f i £ 2 .8 101 ¡E88 "37 ?00° « ¡ p 1 2 1:6 2 n y H B -g - W D ate code
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M1FE40
50HzJE®
J514-5
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GF20DL
Abstract: GF20GL GF20JL GF20KL GF20ML
Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 2.0A GF20DL THRU GF20ML VF < 0.91V @IF = 2A FEATURES Compliance to RoHS product GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications
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GF20DL
GF20ML
100Amp
DO-214AA
DO-214AA
MIL-STD-750,
GF20GL
GF20JL
GF20KL
GF20ML
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