DIODE 2FL 20U
Abstract: 2FL 20U
Text: Super Fast Recovery Diode Single Diode OUTLINE D2FL20U Unit.: mm Package : 2F Weight 0.16jf T yp a y —K v —» 2 0 0 V 1 ,5A ! Feature • /JvSÜSMD • S m all S M D •e y - fx • Low N o ise • trr~35ns • trr-3 5 n s 1 2FL 20U C a th o d e m a rk
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D2FL20U
J532-1)
DIODE 2FL 20U
2FL 20U
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Untitled
Abstract: No abstract text available
Text: 0257^0^ DDDED43 340 • A dvanced P o w er Te c h n o lo g y 1 - Cathode 2 - Anode Back of Case - Cathode APT15D60K 600V 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply
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DDDED43
APT15D60K
T0-220
O-22QAB
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smd diode marking UJ
Abstract: 2fl marking diode DIODE 2FL smd diode marking code UJ smd 2FL D2FL40 2F SMD CODE MARKING Diode smd code cm smd DIODE code marking Q marking code SM CM
Text: Super Fast Recovery Diode Single Diode m tm m D2FL40 1 • e y - r x • L o w N o ise • trr=50ns • t r r - 50 n s 2FL Cathode m ark Feature • S m a ll SM D L Q CM r f 00 f.mn CD0,— N — ° £ \ T y p e No. Main Use • Z 'fy fy y m i • o c /o c n y iK -?
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D2FL40
trr-50ns
J532-1)
smd diode marking UJ
2fl marking diode
DIODE 2FL
smd diode marking code UJ
smd 2FL
D2FL40
2F SMD CODE MARKING
Diode smd code cm
smd DIODE code marking Q
marking code SM CM
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SR Transient diode
Abstract: "punchthrough voltage" AND ESD ethernet TVS 2.8 diode TVS Diode TVS diode Application Note POWER SUPPLY BOARD 94V0 120 marking 5a sot143
Text: S c p m t e c h • ■ January 05, 2000 RailClamp Low Capacitance TVS Diode Array SR2.8 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SR series has
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TEL805-498-2111
OT-143
SR Transient diode
"punchthrough voltage" AND ESD
ethernet TVS 2.8 diode
TVS Diode
TVS diode Application Note
POWER SUPPLY BOARD 94V0 120
marking 5a sot143
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Untitled
Abstract: No abstract text available
Text: r; a i F r P i F S ììP Y SEPTEMBER 1996 SEM ICO ND UCTO RS ADVANCE ENGINEERING DATA DS4218-3.3 DSF20060SF FAST RECOVERY DIODE KEY PARAMETERS v RRM 6000V 780A J f AV 7800A FSM 1400(iC Qr 6.5jis », APPLICATIONS • Inverters. ■ Choppers. ■ Inverse Parallel Diode.
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DS4218-3
DSF20060SF
DSF20060SF60
DSF20060SF58
DSF20060SF56
DSF20060SF55
CB450.
37bflSS2
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GEC Plessey Semiconductors
Abstract: DS4586-1 hf 600 welding wire
Text: P ^ p iG E C P L E S S E Y JULY 1996 SEMI CO NDUC TOR S DS4586-1.2 FRD05615006E FAST RECOVERY EPITAXIAL DIODE CHIP APPLICATIONS • Switch Mode Power Supplies. ■ Motor Control. TYPICAL KEY PARAMETERS V rrm 600V lF 150A t„ 90ns ■ Free Wheel/Antiparallel Diode For Use With IGBT And
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DS4586-1
FRD05615006E
410nm.
GEC Plessey Semiconductors
hf 600 welding wire
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M2FL20U
Abstract: smd diode A4 CJ532 smd marking fy
Text: Super Fast Recovery Diode Single Diode OUTLINE Package I M2F m tm M2FL20U yby - F - y - ? 200V 1.5A < Type C ath o d e m a rk T Feature • /JvPSMD • S m all SM D • fîy - fX ' • Low N oise • trr=35ns • <SVf=0.92V • trr= 35n s Ì 2U 171 No.
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M2FL20U
i50Hz
M2FL20U
smd diode A4
CJ532
smd marking fy
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2fl40
Abstract: DIODE smd marking CODE YX smd code marking yx SMD diode JB
Text: Super Fast Recovery Diode mtm OUTLINE Package : 2F D2FL40 Single Diode Unit-mm Weight 0.16g Typ / C ath o d e m a rk 400V 1.3A Feature • /J v P S M D • Small SMD • fiy - Y X • Low Noise • trr=50ns • trr=50ns ' É p i 3 angiH!0j »7.X \ H-yI-ril9-(W)
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D2FL40
2fl40
DIODE smd marking CODE YX
smd code marking yx
SMD diode JB
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2FL20U
Abstract: d2fl20u 2FL20
Text: P —P X SH'st—K U type Super Fast Recovery Diode Sinole Diode O U T L IN E D IM E N S IO N S D2FL20U 200V 1.5A • JÊtëm R A TIN G S Absolute Maximum Ratings if Ö PC7"? Symbol ~~~—~_ ? onditions W C op - ‘- - - —— _ yp e —- — T¿j-
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D2FL20U
2FL20U
d2fl20u
2FL20
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TDA1301T
Abstract: B302 UKA655
Text: 1^53=524 00=53403 2fl4 « S I C 3 Philips Semiconductors Product specification Digital servo processor DSIC2 TDA1301T FEATURES - 28-pin SO package The DSIC2 realizes the following servo functions: - Great flexibility towards different CD mechanisms • Diode signal preprocessing
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TDA1301T
TDA1301T
B302
UKA655
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE 7^1243 DOOnAO 2fll GSA400AA60 SanRex IGBT Module GSA400AA60 is designed for high speed, high current switching applications. This Module is electrically isolated and with a fast switching, soft recovery diode tr r = 0 . 1/zs reverse connected across each IGBT.
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GSA400AA60
GSA400AA60
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Untitled
Abstract: No abstract text available
Text: i i g *> 3 7 h y Schottky Barrier Diode f / H X Surface Mounting Device —K m s * ? ^ IW Æ J Single Diode OUTLINE DIMENSIONS D1FP3 Case : 1F ° w - 30V 1A • 'M J S M D • S ff iV F = 0 .4 V • K y r U H S S f ö lt •D C ttj^ O R ffl •D C /D C n v A -i?
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Untitled
Abstract: No abstract text available
Text: W ^ 500mA High Side PNP Driver with On Chip Flyback Diode Description Features .- The CS-8240 is a fast, PNP high side
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500mA
CS-8240
CS-B240
15kft
CS-8240
T0-220
O-220
CS-8240TF5
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RP1120
Abstract: RP1150 RP1180 RP1200 RP118
Text: DIOTEC ELECTRONICS CORP 55E D 2flim07 000017^ 7ST • DIX Data Sheet No.: HVRP-1000-A DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, C A 90248 Tel.: 310 767-1052 Fax: (310)767-7958 HIGH VOLTAGE FAST RECOVERY DIODE FEATURES: • V O LT A G E R A N G E
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HVRP-1000-A
DO-41
DO-15,
MIL-STD-202,
30QuS
50/100ns/cm
RP1120
RP1150
RP1180
RP1200
RP118
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Untitled
Abstract: No abstract text available
Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Free Space Single Emitter Diode Laser Modules cw, passively cooled, high brightness JOLD-4.2-BAXH-1E Design 424300824 Features: Applications:
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Untitled
Abstract: No abstract text available
Text: '«! PD -9.1598 International IQR Rectifier PRELIMINARY IRG4BC20KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short
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IRG4BC20KD-S
5SM52
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Untitled
Abstract: No abstract text available
Text: PD 9.1469A International ICR Rectifier IRG4PC50FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .
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IRG4PC50FD
O-247AC
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Silicon Schottky Diode sod123
Abstract: bas70 SOD123 SMD SCHOTTKY BARRIER DIODE BAS70-01
Text: Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES BAS70-01 QUICK REFERENCE DATA • Low leakage current SYMBOL • Low turn-on and high breakdown voltage • Ultra-fast switching speed. DESCRIPTION 711002b DCHEÔHS MAX. 70 UNIT
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BAS70-01
OD123
71106Bb
2fl47
lJo-25
OD123.
711DA2L
Silicon Schottky Diode sod123
bas70 SOD123 SMD
SCHOTTKY BARRIER DIODE
BAS70-01
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Przedpelski
Abstract: MC14046B 100N AR254 CD4046B MC14XXXBCL MC14XXXBCP MC14XXXBDW PLL design przedpelski motorola an535
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14046B Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage–controlled oscillator VCO , source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin
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MC14046B
MC14046B
MC14046B/D*
MC14046B/D
Przedpelski
100N
AR254
CD4046B
MC14XXXBCL
MC14XXXBCP
MC14XXXBDW
PLL design przedpelski
motorola an535
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Schottky Diode SC-62
Abstract: SE046 diode sc-62
Text: COL L HE R S E M I C O N D U C T O R SE046 o INC 4flE D • 2 2 3 0 7 ^ 2 G00174fi 2flfl » C O L . 9 5 A _ 2 2 V ■ Outline Drawings SCHOTTKY BARRIER DIODE i 6 ma:X. 4.6 MAX. 1 ¡anh) 0.44 MAX. 0.55 MAXJ-J_ .15, . 15 I 0.48 MAX.
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G00174fi
SE046
-----SC-62
GD017MC
223fl7TS
aCI017S0
Schottky Diode SC-62
diode sc-62
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mc14046b
Abstract: No abstract text available
Text: MC14046B Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator VCO , source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage
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MC14046B
MC14046B
MC14046B/D
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14046b
Abstract: A. B. Przedpelski, "Phase-Locked Loop Design TTL DIODE
Text: MC14046B Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage–controlled oscillator VCO , source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage
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MC14046B
MC14046B
r14525
MC14046B/D
14046b
A. B. Przedpelski, "Phase-Locked Loop Design
TTL DIODE
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Untitled
Abstract: No abstract text available
Text: MC14046B Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage−controlled oscillator VCO , source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage
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MC14046B
MC14046B
MC14046B/D
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14046b
Abstract: DIODE 2FL MC14046BCP CD4046B MC14046B MC14046BDW MC14046BDWR2 MC14046BF MC14046BFEL Przedpelski
Text: MC14046B Phase Locked Loop The MC14046B phase locked loop contains two phase comparators, a voltage–controlled oscillator VCO , source follower, and zener diode. The comparators have two common signal inputs, PCAin and PCBin. Input PCAin can be used directly coupled to large voltage
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MC14046B
MC14046B
r14525
MC14046B/D
14046b
DIODE 2FL
MC14046BCP
CD4046B
MC14046BDW
MC14046BDWR2
MC14046BF
MC14046BFEL
Przedpelski
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