pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss
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FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
FCH20U10
niec FCHS10A12
FCU20A40
FCU10UC30
FCQ10U06
FSF05B60
SA10QA03
fchs20a08
10ERB20
FCQS30A045
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schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
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Untitled
Abstract: No abstract text available
Text: 3A Avg. 600Volts 31DF6 Fast Recovery Diode DSE-13050（1/2） 外形寸法図 構造：拡散型シリコンダイオード（FRD），リード線型 Dimension : mm OUTLINE DRAWING Package : Axial 6 Construction :Diffusion-type Silicon Diode，Axial Lead Type
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600Volts
31DF6
DSE-13050ï
UL94V-0
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Untitled
Abstract: No abstract text available
Text: WSR05 LOW CAPACITANCE DIODE ARRAY P b Lead Pb -Free DESCRIPTION: TRANSIENT VOLTAGE SUPPERSSORS 5.0 VOLTS WSR05 are surge rated diode arrays designed to protect high speed data components which are connected to data and transmission lines from overvoltage caused by ESD (electrostatic discharge),
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WSR05
WSR05
31-Dec-08
OT-143
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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Untitled
Abstract: No abstract text available
Text: SLD302XT SONY. 200mW High Power Laser Diode Description SLD302XT is a gain-guided, high-power laser diode with a built-in TE cooler. A new flat, square package with a low thermal resistance and an in-line pin configuration is employed. Fine tuning of the wavelength is possible by
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SLD302XT
200mW
SLD302XT
180mW
180mW)
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31DF2 diode
Abstract: 31DF2 31DF1
Text: FAST RECOVERY DIODE 3.3A/100— 2 00 V /trr : 30nsec 31DF1 31DF2 FEATURES ° Ultra - Fast Recovery 0 Low Forward Voltage Drop ° Low Power Loss, High Efficiency 0 High Surge Capability »100 Volts thru 600 Volts Types Available MAXIMUM RATINGS \ type Voltage Rating
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A/100--
30nsec
31DF1
31DF2
31DF2
Ta-40
31DF2 diode
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 3.3a /9o ~ 31DQ09 31DQ10 ioov FEATURES ° Low Forward Voltage Drop 5 Low Power Loss, High Efficiency ° High Surge Capability 30 Volts through 100 Volts Types Available MAXIMUM R A T IN G S \ type Voltage Rating ♦31DQ09 31DQ10 Unit
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31DQ09
31DQ10
31DQ10
Ta-22
20x20xlt
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TIC 103a
Abstract: 31DF6 35NSEC
Text: FAST RECOVERY DIODE 31DF6 3.3A /600V /trr: 35nsec FEATURES o Ultra-Fast Recovery o Low Forward Voltage Drop o Low Power Loss, High Efficiency o High Surge Capability o 100 Volts through 600 Volts Types Available MAXIMUM RATINGS Voltage Rating " " \T y p e
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A/600V/trr:
35nsec
31DF6
23Grams
02s-J
TIC 103a
31DF6
35NSEC
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31DQ09
Abstract: 31DQ10
Text: SCHOTTKY BARRIER DIODE 31DQ09 31DQ10 3.3A/90~100V FEA TU RES ° Low Forward Voltage Drop • Low Power Loss, High Efficiency ° High Surge Capability "30 Volts through 100 Volts Types Available MAXIMUM RA TING S Voltage Rating \ type Symbol\. ♦31DQ09 31DQ 10
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31DQ09
31DQ10
31DQ09
bbl5123
D0D171b
31DQ10
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3IDF2
Abstract: 31DF2 7 31DF2 diode diode 3IDF2 31DF2 200v 3A ultra fast recovery diode 31DF1 31DF
Text: FAST RECOVERY DIODE 3.3A/100— 200V/trr : 30nsec 31DF1 31DF2 FEATURES ^-5.8 .23 DIA 1 ° Ultra - Fast Recovery ° Low Forward Voltage Drop l.Sf.OSWp.r* 1.3C051) 8 Low Power Loss, High Efficiency ° High Surge Capability »100 Volts thru 600 Volts Types Available
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A/100â
00V/trr
30nsec
31DF1
31DF2
31DF1
bbl51E3
3IDF2
31DF2 7
31DF2 diode
diode 3IDF2
31DF2
200v 3A ultra fast recovery diode
31DF
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Diode 31DQ06
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 3.3A/50— 60V 31DQ05 31DQ06 FEA TU R E S ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available MAXIMUM RATING S \ tïpe Voltage Rating ♦ 31DQ05 31DQ06
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A/50--
31DQ05
31DQ06
31DQ05
Diode 31DQ06
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 310Q03 31DQ04 3.3A/30— 40A FEATURES ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available MAXIMUM R A T IN G S Voltage Rating " \ type ♦ 3 1DQ0 3 31DQ04
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A/30--
310Q03
31DQ04
31DQ04
31DQI3
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 31DQ05 31DQ06 3.3A/50— 60V FEATU RES ° Low Forward Voltage Drop 5.^.23 DIA - m . • Low Power Loss, High Efficiency 1.50059) » 1.30O51) ° High Surge Capability n 21 .83) MIN 30 Volts through 100 Volts Types Available 10(.39)
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31DQ05
31DQ06
30O51)
31DQ05
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Diode 31DQ04
Abstract: 31DQ04 31DQ03 4vua
Text: SCHOTTKY BARRIER DIODE 31DQ03 31DQ04 3.3a / 3 0 ~ 4 0 a FEATURES ° Low Forward Voltage Drop 5.8^.23 DIA ' Low Power Loss, High Efficiency 1.5 .059) DIA 1.3(.051) ° High Surge Capability 21(.83) MIN o 30 Volts through 100 Volts Types Available 10(.39) MAX
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31DQ03
31DQ04
31DQ03
J00kH
Diode 31DQ04
31DQ04
4vua
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 31DQ09 31DQ10 3.3A/90~100V FEATURES ° Low Forward Voltage Drop 5.8 .23 DIA • Low Power Loss, High Efficiency 1.5(.059)nT. ° High Surge Capability 1.3(.05l) »30 Volts through 100 Volts Types Available 21(.83) MIN 10(.39) MAX 1.5(.059)nT,
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31DQ09
31DQ10
31DQ09
20x20xlt
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 3.3A/100— 200V/trr : 30nsec 31DF1 31DF2 FEATURES 4 £^-5.8.23 DIA ° Ultra - Fast Recovery ° Low Forward Voltage Drop 1.5 .059) DIA 1.3(.051) ° Low Power Loss, High Efficiency 21(.83) MIN ° High Surge Capability »100 Volts thru 600 Volts Types Available
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A/100â
00V/trr
30nsec
31DF1
31DF2
31DF1
95T5DDD
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 31DQ03 31DQ04 3.3a /3 0 ~ 4 0 a FEA TU RES ► - 5.8 .23)DIA ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency n +[ 1.5(.059) r>, a |¡ 1.3^.051) ° High Surge Capability 21(.83) MIN o 30 Volts through 100 Volts Types Available
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31DQ03
31DQ04
31DQ03
bbl5123
00Q17RE
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 3.3A /300— 4 0 0 V /trr : 30nsec 31DF3 31DF4 FEATURES 5.8 .23 DIA ° Ultra - Fast Recovery ° Low Forward Voltage Drop 1.5(.059) DIA 1.3(.051) ° Low Power Loss, High Efficiency 21(:83) MIN » High Surge Capability »100 Volts thru 600 Volts Types Available
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30nsec
31DF3
31DF4
21C83)
31DF3
bbl51c
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Diode 31DQ06
Abstract: Diode 31DQ05 31DQ05 31DQ06 BACR
Text: SCHOTTKY BARRIER DIODE 31DQ05 31DQ06 3.3A/50— 60V FEATURES ° Low Forward Voltage Drop 5.^.23 D IA ° Low Power L o s s , High Efficiency 1.5 .059) n l . 1.3(.051) ° High Surge Capability 21(.83) MIN 30 Volts through 100 Volts Types Available *Ü 1.5(.059) T-.T »
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31DQ05
31DQ06
31DQ05
Ti-40
00017T4
Diode 31DQ06
Diode 31DQ05
31DQ06
BACR
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31DF4
Abstract: 31DF4 diode 400v 3a ultra fast recovery diode DF4 DIODE 31DF3
Text: FAST RECOVERY DIODE 3 .3 A /3 00 ~ 40 0V /trr:30n sec 31DF3 31DF4 -6 n + FEATURES A-5.8 .23 DIA ° Ultra - Fast Recovery ° Low Forward Voltage Drop 1.51059) 1.3(.051) • Lo w Power Loss, High Efficiency 21(:83) MIN » High Surge Capability o 100 Volts thru 600 Volts Types Available
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00V/1
30nsec
31DF3
31DF4
31DF3
D0021b0
31DF4
31DF4 diode
400v 3a ultra fast recovery diode
DF4 DIODE
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DIODE 31D
Abstract: 31D DIODE
Text: bEE D • b427525 0D37Mbô 7bS « N E C E LIGHT EM ITTIN G DIODE NDL4103L1 850 nm O PT IC A L FIBER C O M M U N IC A T IO N S A IG a A s LIGHT EM IT TIN G D IO D E N E C ELECTRONICS INC D E S C R IP T IO N N D L4 1 0 3 L1 is an A IG aA s double heterostructure tight emitting diode, especially designed for a light source for optical fiber
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b427525
0D37Mbô
NDL4103L1
GI-50
DD37470
DIODE 31D
31D DIODE
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE s a /sov 3 1D Q 0 3 L FEATURES OLow Forward Voltage Drop o Low Power Loss, High Efficiency o High Surge Capability MAXIMUM RATINGS \ T y p e 31DQ03L V oltage R ating Unit S y m b o f\ Repetitive P eak R everse V oltage V RRM 30 V N on-Repetitive Peak Reverse
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31DQ03L
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