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    DIODE 31DQ04 Search Results

    DIODE 31DQ04 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 31DQ04 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    pn junction diode structure

    Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
    Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss


    Original     		PDF

    FCH20U10

    Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
    Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode


    Original     		OD-123 O-220F-2pin O-251 O-252) O-220-2pin O-220 O-220F O-262 FCH20U10 niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045 PDF

    schottky barrier diode b22

    Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
    Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode


    Original     		OD-123 O-220F-2pin O-251 O-252) O-220-2pin O-220 O-220F O-262 schottky barrier diode b22 FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent PDF

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360 PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode PDF

    Diode 31DQ04

    Abstract: 31DQ04
    Text: SBD Type：31DQ04 •OUTLINE DRAWING 構造 ：ショットキー・バリア・ダイオード ＳＢＤ リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用途 ： 高周波整流用 Application: High Frequency Rectification ■最大定格 / Maximum Ratings


    Original     		Type31DQ04 31DQ04 Diode 31DQ04 31DQ04 PDF

    Untitled

    Abstract: No abstract text available
    Text: SBD Type：31DQ04 •OUTLINE DRAWING 構造 ：ショットキー・バリア・ダイオード ＳＢＤ リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用途 ： 高周波整流用 Application: High Frequency Rectification ■最大定格 / Maximum Ratings


    Original     		Type31DQ04 31DQ04 PDF

    Untitled

    Abstract: No abstract text available
    Text: SBD Type：31DQ04 •OUTLINE DRAWING 構造 ：ショットキー・バリア・ダイオード ＳＢＤ リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用途 ： 高周波整流用 Application: High Frequency Rectification ■最大定格 / Maximum Ratings


    Original     		Type31DQ04 31DQ04 PDF

    sony flyback transformer

    Abstract: smps repair circuit ultrasonic transducers 48V sony flyback transformer datasheet fast recovery diode 600v 5A Ultrasonic Cleaning Transducer FCH10A15 sony flyback FAST RECOVERY DIODE 200ns 8A 40V FAST RECOVERY DIODE 200ns
    Text: TABLE of CONTENTS Diode — EMI and Efficiency————–—————————– Rectification Noise—————————————————— 3 series of SBD———————————————————— SBD and Thermal Runaway——————————————


    Original     		PDF

    31dq03

    Abstract: VS-31DQ04TR VS-31DQ03
    Text: VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy


    Original     		VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3 DO-201AD 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 31dq03 VS-31DQ04TR VS-31DQ03 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy


    Original     		VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3 2002/95/EC DO-201AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy


    Original     		VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3 2002/95/EC DO-201AD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 310Q03 31DQ04 3.3A/30— 40A FEATURES ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available MAXIMUM R A T IN G S Voltage Rating " \ type ♦ 3 1DQ0 3 31DQ04


    OCR Scan     		A/30-- 310Q03 31DQ04 31DQ04 31DQI3 PDF

    Diode 31DQ04

    Abstract: 31DQ04 31DQ03 4vua
    Text: SCHOTTKY BARRIER DIODE 31DQ03 31DQ04 3.3a / 3 0 ~ 4 0 a FEATURES ° Low Forward Voltage Drop 5.8^.23 DIA ' Low Power Loss, High Efficiency 1.5 .059) DIA 1.3(.051) ° High Surge Capability 21(.83) MIN o 30 Volts through 100 Volts Types Available 10(.39) MAX


    OCR Scan     		31DQ03 31DQ04 31DQ03 J00kH Diode 31DQ04 31DQ04 4vua PDF

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 31DQ03 31DQ04 3.3a /3 0 ~ 4 0 a FEA TU RES ► - 5.8 .23)DIA ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency n +[ 1.5(.059) r>, a |¡ 1.3^.051) ° High Surge Capability 21(.83) MIN o 30 Volts through 100 Volts Types Available


    OCR Scan     		31DQ03 31DQ04 31DQ03 bbl5123 00Q17RE PDF

    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


    OCR Scan     		1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement" PDF

    jointal Z

    Abstract: 5n fast recovery diodes 30DL4 diode 30dl4 F10P20F circuit SCHEMATIC DIAGRAM SMPS 12v 5A diode RP 6040 31DF2 diode f5kq100 smps 8085
    Text: APPLICATION NOTE FRED U ltr a F a st R ec o v er y AND SCHOTTKY BARRIER D i ODE SBD APPLICATION NOTE TABLE OF CONTENTS Introduction. 27 1.Fast Recovery Diode . 27 2 .FRD and SBD .'. 28


    OCR Scan     		JIS-C7021 40VDC jointal Z 5n fast recovery diodes 30DL4 diode 30dl4 F10P20F circuit SCHEMATIC DIAGRAM SMPS 12v 5A diode RP 6040 31DF2 diode f5kq100 smps 8085 PDF

    smd diode f54

    Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
    Text: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040


    OCR Scan     		10MQ040 10MQ060 10MQ090 15MQ040 10BQ015 10BQ040 10BQ060 10BQ100 30BQ015 30BQ040 smd diode f54 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150 PDF

    F10P100

    Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
    Text: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04


    OCR Scan     		11EQS03L 11EQS02L 11EQ03 11EQ04 11EQ05 11EQ06 11EQ09 11EQ10 11EQS03 11EQS04 F10P100 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F PDF