GP-30DL
Abstract: 30DL
Text: ZOWIE Low VF Rectifier Diode GP30DLH THRU GP30MLH Low VF Rectifier Diode VF < 0.90V @IF = 3A FEATURES IFSM = 140Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS
|
Original
|
GP30DLH
GP30MLH
140Amp
DO-201AD
DO-201AD
MIL-STD-750,
300uS
GP-30DL
30DL
|
PDF
|
GP-30DL
Abstract: GP30DL GP30ML
Text: ZOWIE Low VF Rectifier Diode GP30DL THRU GP30ML Low VF Rectifier Diode VF < 0.90V @IF = 3A IFSM = 140Amp FEATURES GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop
|
Original
|
GP30DL
GP30ML
140Amp
DO-201AD
DO-201AD
MIL-STD-750,
300uS
GP-30DL
GP30ML
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ZOWIE Low VF Rectifier Diode GP30DLH THRU GP30MLH Low VF Rectifier Diode VF < 0.90V @IF = 3A FEATURES IFSM = 140Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop
|
Original
|
GP30DLH
GP30MLH
140Amp
DO-201AD
DO-201AD
MIL-STD-750,
300uS
|
PDF
|
GF30DL
Abstract: GF30GL GF30JL GF30KL GF30ML
Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DL THRU GF30ML VF < 0.91V @IF = 3A FEATURES Compliance to RoHS product GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications
|
Original
|
GF30DL
GF30ML
140Amp
DO-214AA
DO-214AA
MIL-STD-750,
GF30GL
GF30JL
GF30KL
GF30ML
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DLH THRU GF30MLH VF < 0.91V @IF = 3A FEATURES Halogen-free type Compliance to RoHS product GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications
|
Original
|
GF30DLH
GF30MLH
140Amp
DO-214AA
DO-214AA
|
PDF
|
GF30D
Abstract: No abstract text available
Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DL THRU GF30ML VF < 0.91V @IF = 3A FEATURES Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications
|
Original
|
GF30DL
GF30ML
140Amp
DO-214AA
DO-214AA
MIL-STD-75
GF30D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DLH THRU GF30MLH VF < 0.91V @IF = 3A FEATURES Halogen-free type Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications
|
Original
|
GF30DLH
GF30MLH
140Amp
DO-214AA
DO-214AA
|
PDF
|
GP30DL
Abstract: GP30GL GP30JL GP30KL GP30ML GP-30DL
Text: ZOWIE Low VF Rectifier Diode GP30DL THRU GP30ML Low VF Rectifier Diode VF < 0.90V @IF = 3A IFSM = 140Amp FEATURES GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop o 3.0 Ampere operation at TA=55 C with no thermal runaway
|
Original
|
GP30DL
GP30ML
140Amp
DO-201AD
DO-201AD
MIL-STD-750,
300uS
GP30GL
GP30JL
GP30KL
GP30ML
GP-30DL
|
PDF
|
IC 7805
Abstract: 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912
Text: I WAY-TECH 33E D E N T E R P R I S E CO 'T'-dB»-’h Tb31flHE O O O O O O l *\ —nfemmm sBM&m > SILICON REGULAR RECTIFIERS FAST RECOVERY RECTIFIERS 1N4001 - 1N4007 1A, 50V-1000V 1N5391 - 1N5399 (1.5A, 50V-1000V) 1N5400 - 1N5408 (3A, 50V-1000V) S6A05 - S6A10 (BA, 50V-1000V)
|
OCR Scan
|
1N4001
1N4007
0V-1000V)
1N5391
1N5399
1N5400
1N5408
S6A05
IC 7805
7812 voltage regulator 5A
REGULATOR IC 7805
REGULATOR IC 7824
1n1001
6a smd transistor
REGULATOR IC 7905
7824 5A
REGULATOR IC 7812
7812 7912
|
PDF
|
APT6M100K
Abstract: MIC4452 3a ultra fast diode
Text: APT6M100K 1000V, 6A, 2.50Ω MAX N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
|
Original
|
APT6M100K
O-220
APT6M100K
MIC4452
3a ultra fast diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT6M100K 1000V, 6A, 2.50Ω MAX N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
|
Original
|
APT6M100K
O-220
|
PDF
|
APT6M100K
Abstract: MIC4452
Text: APT6M100K 1000V, 6A, 2.50Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
|
Original
|
APT6M100K
O-220
APT6M100K
MIC4452
|
PDF
|
APT5F100K
Abstract: MIC4452 1000v5a
Text: APT5F100K 1000V, 5A 2.8Ω Max, Trr ≤ 155nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
|
Original
|
APT5F100K
155nS
O-220
FREDFE42
APT5F100K
MIC4452
1000v5a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT5F100K 1000V, 5A 2.8Ω Max, Trr ≤ 155nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
|
Original
|
APT5F100K
155nS
O-220
|
PDF
|
|
|
QM150HY-2H
Abstract: E80276 E1815 qm150hy
Text: MITSUBISHI TRANSISTOR MODULES QM150HY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM150HY-2H • • • • • IC Collector current . 150A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75
|
Original
|
QM150HY-2H
E80276
E80271
QM150HY-2H
E80276
E1815
qm150hy
|
PDF
|
qm150dy-2hk
Abstract: QM150DY-2H Diode B2x E80276
Text: MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HK • • • • • IC Collector current . 150A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75
|
Original
|
QM150DY-2HK
E80276
E80271
qm150dy-2hk
QM150DY-2H
Diode B2x
E80276
|
PDF
|
D027A
Abstract: DIODE 1000a diode 628 1000A diode DTV32-1000A 1000v 3a diode 113 DTV32 MTV32-600A mtv32 switching DIODE 1000A
Text: DTV32-1000A MTV32-600A / ^ 7 SGS-THOMSON CRT HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER & MODULATION DIODES MAIN PRODUCTS CHARACTERISTICS MTV32 DTV32 If peak 3A 3A Vr r m 600V 1000V trr 50ns 70ns Vf 1.6V 1.6V FEATURES • PRODUCTS SPECIFIC TO HORIZONTAL DE
|
OCR Scan
|
DTV32-1000A
MTV32-600A
MTV32
DTV32
D027A
09x/p2xÂ
7T2T237
DTV32-1000A
DIODE 1000a
diode 628
1000A diode
1000v 3a diode 113
DTV32
MTV32-600A
switching DIODE 1000A
|
PDF
|
2510W
Abstract: RS1M diode
Text: Email: [email protected] Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10
|
Original
|
DO-214AC
ABS10
LL4148
MB10S
SM4007
MB10M
DB101-DB107;
DB151-DB157
DB101S-DB107S;
2510W
RS1M diode
|
PDF
|
QM150DY-2HB
Abstract: E80276 QM150DY-2HBK QM150DY-2H QM15
Text: MITSUBISHI TRANSISTOR MODULES QM150DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HBK • • • • • IC Collector current . 150A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750
|
Original
|
QM150DY-2HBK
E80276
E80271
QM150DY-2HB
E80276
QM150DY-2HBK
QM150DY-2H
QM15
|
PDF
|
AOT3N100
Abstract: No abstract text available
Text: AOT3N100/AOTF3N100 1000V,2.8A N-Channel MOSFET General Description Product Summary The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss
|
Original
|
AOT3N100/AOTF3N100
AOT3N100
AOTF3N100
AOTF3N100L
O-220F
O-220
AOTF3N100
AOT3N100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AOT3N100/AOTF3N100 1000V,2.8A N-Channel MOSFET General Description Product Summary The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss
|
Original
|
AOT3N100/AOTF3N100
AOT3N100
AOTF3N100
AOTF3N100L
O-220F
O-220
AOTF3N100
|
PDF
|
IXTH6N100D2
Abstract: t6n100 IXTA6N100D2 IXTP6N100D2 T6N10 6N100D2 diode 6A 1000v
Text: Preliminary Technical Information IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V Continuous
|
Original
|
IXTA6N100D2
IXTP6N100D2
IXTH6N100D2
O-263
O-220AB
O-220
O-247)
O-263
O-247
IXTH6N100D2
t6n100
IXTA6N100D2
IXTP6N100D2
T6N10
6N100D2
diode 6A 1000v
|
PDF
|
IXTH6N100D2
Abstract: No abstract text available
Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V Continuous
|
Original
|
IXTA6N100D2
IXTP6N100D2
IXTH6N100D2
O-263
O-220AB
O-220
O-247)
O-263
O-247
IXTH6N100D2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (TAB) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
IXTA6N100D2
IXTP6N100D2
IXTH6N100D2
O-263
O-220
O-247)
O-263
O-220
100ms
|
PDF
|
