CLS02
Abstract: No abstract text available
Text: CLS02 TOSHIBA Schottky Barrier Diode CLS02 Switching-Mode Power Supply Secondary-Rectification Applications (Low Voltage) DC/DC Converter Applications Unit: mm 4 ± 0.2 ② Average forward current: IF (AV) = 10 A • Repetitive peak reverse voltage: VRRM = 40 V
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CLS02
CLS02
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CLS02
Abstract: No abstract text available
Text: CLS02 TOSHIBA Schottky Barrier Diode CLS02 Switching-Mode Power Supply Secondary-Rectification Applications (Low Voltage) DC/DC Converter Applications Unit: mm 4 ± 0.2 ② Repetitive peak reverse voltage: VRRM = 40 V Suitable for compact assembly due to small surface-mount package:
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CLS02
CLS02
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CLS02
Abstract: No abstract text available
Text: CLS02 TOSHIBA Schottky Barrier Diode CLS02 Switching-Mode Power Supply Secondary-Rectification Applications (Low Voltage) Unit: mm DC/DC Converter Applications ② • Forward voltage: VFM = 0.55 V (max) • Average forward current: IF (AV) = 10 A • Repetitive peak reverse voltage: VRRM = 40 V
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CLS02
CLS02
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Untitled
Abstract: No abstract text available
Text: CLS02 TOSHIBA Schottky Barrier Diode CLS02 Switching-Mode Power Supply Secondary-Rectification Applications (Low Voltage) DC/DC Converter Applications Unit: mm 4 ±0.2 ② 1.5±0.1 • Repetitive peak reverse voltage: VRRM = 40 V • Suitable for compact assembly due to small surface-mount package:
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CLS02
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s02 code marking toshiba
Abstract: No abstract text available
Text: CLS02 TOSHIBA Schottky Barrier Diode CLS02 Switching-Mode Power Supply Secondary-Rectification Applications (Low Voltage) Unit: mm DC/DC Converter Applications ② • Forward voltage: VFM = 0.55 V (max) • Average forward current: IF (AV) = 10 A • Repetitive peak reverse voltage: VRRM = 40 V
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CLS02
s02 code marking toshiba
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Untitled
Abstract: No abstract text available
Text: CLS02 TOSHIBA Schottky Barrier Diode CLS02 Switching-Mode Power Supply Secondary-Rectification Applications (Low Voltage) DC/DC Converter Applications Unit: mm 4 ±0.2 ② 1.5±0.1 • Repetitive peak reverse voltage: VRRM = 40 V • Suitable for compact assembly due to small surface-mount package:
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CLS02
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SS125
Abstract: ss125 transistor ss125 datasheet BSS125 Q67000-S233 S233 marking Q62702-S021 Q67000-S008 marking "BSs"
Text: BSS 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.5 .2.5 V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 125 600 V 0.1 A 45 Ω TO-92 SS125 Type BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S021
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SS125
Q62702-S021
Q67000-S008
Q67000-S233
E6288
E6296
E6325
SS125
ss125 transistor
ss125 datasheet
BSS125
Q67000-S233
S233 marking
Q62702-S021
Q67000-S008
marking "BSs"
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Untitled
Abstract: No abstract text available
Text: SLD433S4 60W Array Laser Diode Preliminary Description The SLD433S4 is a high power laser diode with an array structure, which achieves 60W high power. The package is high efficiency water cooling package. Module customizing is available. M-S027 Features • High power
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SLD433S4
SLD433S4
M-S027
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s027
Abstract: C6802 SS-00259 high power laser IEC60825-1 SLD433S4
Text: SLD433S4 60W Array Laser Diode Description The SLD433S4 is a high power laser diode with an array structure, which achieves 60W high power. The package is high efficiency water cooling package. Module customizing is available. M-S027 Features • High power
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SLD433S4
SLD433S4
M-S027
SS-00259,
SS-00259
net/SonyInfo/procurementinfo/ss00259/
s027
C6802
high power laser
IEC60825-1
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e05125
Abstract: C6802 IEC60825-1 SLD433S4 SS-00259 water conductivity circuit
Text: SLD433S41 60W Array Laser Diode Description The SLD433S41 is a high power laser diode with an array structure, which achieves 60W high power. The package is high efficiency water cooling package. Module customizing is available. M-S027 Features • High power
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SLD433S41
SLD433S41
M-S027
SS-00259,
SS-00259
net/SonyInfo/procurementinfo/ss00259/
SLD433S4
e05125
C6802
IEC60825-1
SLD433S4
water conductivity circuit
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LM 2940 OCT
Abstract: melcher S-1000 DIN 41612 H15 male Melcher CM-1000 Melcher bM 2000 LK 1301-7R melcher bM 1000 melcher LM 1000 TDC 310 NTC Melcher AM 1000
Text: DC-DC Converters <100 W 7 DC-DC Converters <100 W 7.1 Rugged Environment Output [W] 10 20 40 60 80 100 7.2 3 Output [V DC] 5 12 15 24 36 48 Input [V DC] 10 30 70 140 220 380 Product Family Case Page M M02 7-2 S S02 7 - 26 Input [V DC] 10 30 70 140 220 380
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4b dmz ptc
Abstract: melcher bM 3040 H1501 H1000 melcher ac-dc converter melcher LM 1000 Melcher dc-dc converter bm 1000 1206 FUSE marking UD 1301-7R MELCHER THE POWER PARTNERS Melcher LK 2660-7R
Text: DC-DC Converters <100 W 7 DC-DC Converters <100 W 7.1 Rugged Environment Output [W] 10 20 40 60 80 100 7.2 3 Output [V DC] 5 12 15 24 36 48 Input [V DC] 10 30 70 140 220 380 Product Family Case Page M M02 7-2 S S02 7 - 26 Input [V DC] 10 30 70 140 220 380
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Melcher M 1000 AC-DC/DC-DC CONVERTER
Abstract: LM 2000 melcher Melcher Melcher LK 2000 melcher LM 1000 Melcher family lm 1601 H1000 melcher H254 melcher 1000 Melcher family K
Text: AC-DC Converters <100 W 10 AC-DC Converters <100 W 10.1 Rugged Environment Output [W] 10 20 40 60 80 100 3 Output [V DC] 5 12 15 24 36 48 Input [V AC] 85 110 135 170 220 265 Product Family Case Page M M02 10 - 2 S S02 10 - 23 VSR various 10 - 46 Product Family
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287-04A
289-04A
Melcher M 1000 AC-DC/DC-DC CONVERTER
LM 2000 melcher
Melcher
Melcher LK 2000
melcher LM 1000
Melcher family lm 1601
H1000 melcher
H254
melcher 1000
Melcher family K
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lm 383 ic
Abstract: 1001-7R 1301-7R B3P5 TOKO AC-DC Converters NTC 50-11 resistance marking 5024B NTC 50-11 melcher LM 1000 melcher LM 1601
Text: AC-DC Converters <100 W 10 AC-DC Converters <100 W 10.1 Rugged Environment Output [W] 10 20 40 60 80 100 3 Output [V DC] 5 12 15 24 36 48 Input [V AC] 85 110 135 170 220 265 Product Family Case Page M M02 10 - 2 S S02 10 - 23 VSR various 10 - 46 Product Family
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287-04A
289-04A
lm 383 ic
1001-7R
1301-7R
B3P5
TOKO AC-DC Converters
NTC 50-11 resistance
marking 5024B
NTC 50-11
melcher LM 1000
melcher LM 1601
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CCS020M12CM2
Abstract: CPWR-AN13
Text: CCS020M12CM2 1.2kV, 80 mΩ Silicon Carbide Six-Pack Three Phase Module C2M MOSFET and Z-Rec Diode 1.2 kV RDS(on) 80 mΩ Esw, Total @ 20A, 150 ˚C Features • • • • • • • VDS 0.48 mJ Package Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode
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CCS020M12CM2
CPWR-AN12,
CPWR-AN13]
CCS020M12CM2
CPWR-AN13
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E78996
Abstract: tig ac inverter circuit IR E78996 tig welding E78996 datasheet bridge tig welding machine irf e78996 GA100TS60SQ tig welding half bridge
Text: Bulletin I27119 rev. B 06/02 GA100TS60SQ "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features • • • • • • VCES = 600V Generation 4 Standard Speed IGBT Technology QuietIR Antiparallel diodes with Fast Soft recovery Very Low Conduction Losses
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I27119
GA100TS60SQ
E78996)
E78996
tig ac inverter circuit
IR E78996
tig welding
E78996 datasheet bridge
tig welding machine
irf e78996
GA100TS60SQ
tig welding half bridge
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CD40468
Abstract: CD4046BCN cd4046bc L50115 CD4046B resistor arry CD4046BM c04046 FM MODULATOR CD4046B Zener diode 0740
Text: November 1995 Semiconductor C D 40 46 B M /C D 4 04 6B C M icro p o w er P h ase-Locked Loop General Description The CD4046B micropower phase-locked loop PLL con sists of a low power, linear, voltage-controlled oscillator (VCO), a source follower, a zener diode, and two phase
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CD4046BM/CD4046BC
CD4046B
CD40468
CD4046BCN
cd4046bc
L50115
resistor arry
CD4046BM
c04046
FM MODULATOR CD4046B
Zener diode 0740
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ss125 transistor
Abstract: ss125
Text: SIEMENS BSS 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode •^GS th = 1-5 -2 .5 V Type b 0.1 A BSS 125 ^DS 600 V Type BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S021 Q67000-S008 Q67000-S233 ffDS(on) Package Marking 45 Q TO-92
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SS125
Q62702-S021
Q67000-S008
Q67000-S233
E6288
E6296
E6325
ss125 transistor
ss125
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSS 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode ^GS th = 1-5 .2.5 V Type ^DS BSS 125 600 V Type BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S021 Q67000-S008 Q67000-S233 0.1 A ffDS(on) Package Marking 45 £1 TO-92 SS125
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Q62702-S021
Q67000-S008
Q67000-S233
SS125
E6288
E6296
E6325
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S3 DIODE schottky
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification 6 N-channel 30 mfi FET/Schottky barrier diode array_ FEATURES PHN603S PINNING-SOT137-1 S024 • 30 mQ on-state resistance • On board Schottky diodes for back-emf clamping. APPLICATIONS • Driving high performance three phase brushless
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24-pin
OT137-1
SNW-EQ-608,
SNW-FQ-302A
SNW-FQ-302B.
PINNING-SOT137-1
PHN603S
S3 DIODE schottky
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ss125 transistor
Abstract: bss125 SS125 Q67000-S008
Text: SIEMENS BSS125 SIPMOS • Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1-5 .2.5 V Type VDS to BSS 125 600 V 0.1 A Type BSS 125 BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S505 Q62702-S021 Q67000-S008 Q67000-S233 ^DS(on) 45 Q
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BSS125
SS125
Q62702-S505
Q62702-S021
Q67000-S008
Q67000-S233
E6288
E6296
E6325
ss125 transistor
bss125
SS125
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Untitled
Abstract: No abstract text available
Text: A dvanced P ow er Te c h n o lo g y O D APT5020BN 500V 28.0A 0.200 O S APT5022BN 500V 27.0A 0.22£i G F vvE r m o s í ® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S All Ratings: Tc = 25°C unless otherwise specified. APT S020BN
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APT5020BN
APT5022BN
S020BN
5022BN
APT5020/5022BN
100nS
100mS
-247AD
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diode F 82 bp
Abstract: DIODE BP ZF8.2 EC10QSO ZF-8.2 Zf12 smd zener bp ZF24 ZF30 Q05CT
Text: QUANTUM MARKETING INTERNATIONA* a n Nihon Inter Electronics Corporation AUTHORIZED AGENT Case Style Type Circuit E C 10DS1 EC10DS2 EC10DS4 EC10DS6 R ectifier Diode D 64 lo V FM (A) (V) 1.0 1.1 .55 EC10Q S03 EC10QSO_4 Schottky Barrier Diode (S.B.D.) Single C hip
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10DS1
EC10DS2
EC10DS4
EC10DS6
EC10Q
EC10QSO
10QS05
10QS06
EC10QS10
EC15Q
diode F 82 bp
DIODE BP
ZF8.2
ZF-8.2
Zf12
smd zener bp
ZF24
ZF30
Q05CT
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D75GA
Abstract: semibox SKM 75 GAL 123 IGBT Semitrans M SKD 100 GAL semikron SKD 75 gal SKD75GAL
Text: sem ik r d n Absolute Maximum Ratings Symbol V cES R g e = 20 k ii V cG R lc Tease ” 25/80 O Tease = 25/80 °C; tp = 1 ms I CM V ges Ptot per IGBT/D1/D8, T „ » = 2 5 °C Tj, Tag Vjsol humidity climate AC, 1 min. DIN 40 040 DIN IEC 68T.1 Diodes 91 If
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