semikron skiip 1242 gb 120
Abstract: 1000A current sensors M2 1200 DIODE SKiiP 1242 GB 120 . 407 CTV DIODE S4 01 SKIIP CASE S4 DIODE 1000a semikron+skiip+1242+gb+120
Text: SKiiP 1242 GB 120 - 407 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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semikron skiip 1242 gb 120
Abstract: skiip 33 ups 063 semikron skiip 33 skiip gb 120 SKiiP 1242 GB 120 . 407 CTV IGBT 1000A SKIIP CASE S4 semikron 1242 gb 120
Text: SKiiP 1242 GB 120 - 407 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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IGBT11)
Rthjs10)
semikron skiip 1242 gb 120
skiip 33 ups 063
semikron skiip 33
skiip gb 120
SKiiP 1242 GB 120 . 407 CTV
IGBT 1000A
SKIIP CASE S4
semikron 1242 gb 120
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1242GB120-407CTV
Abstract: SKIIP CASE S4 semikron skiip 3 gb 120
Text: SKiiP 1242GB120-407CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1242GB120-407CTV
1242GB120-407CTV
SKIIP CASE S4
semikron skiip 3 gb 120
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MINI-MELF DIODE BLACK CATHODE
Abstract: F 407 Diode
Text: L L 4448 Small-Signal Diode - Fast Switching Rectifier Reverse Voltage 100V Forward Current 150mA Features Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case especially suited for automatic insertion. This diode is also available in other case styles including the
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150mA
DO-35
1N4448.
OD-80C)
100mA
150OC
100MHz,
MINI-MELF DIODE BLACK CATHODE
F 407 Diode
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ECONO2-6PACK IGBT module
Abstract: IC 7425 datasheet IR E78996 IR E78996 105 IRF E78996 E78996 IR ic 4075 datasheet or gate GB35XF120K
Text: PD - 94570 GB35XF120K IGBT 6PACK MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
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GB35XF120K
ECONO2-6PACK IGBT module
IC 7425 datasheet
IR E78996
IR E78996 105
IRF E78996
E78996 IR
ic 4075 datasheet or gate
GB35XF120K
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A 3150 igbt driver
Abstract: IR E78996 IRF E78996 ECONO2-6PACK IGBT module ir igbt 1200V 40A igbt qualification circuit E78996 IR GB25XF120K
Text: PD - 94569 GB25XF120K IGBT 6PACK MODULE Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient
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GB25XF120K
A 3150 igbt driver
IR E78996
IRF E78996
ECONO2-6PACK IGBT module
ir igbt 1200V 40A
igbt qualification circuit
E78996 IR
GB25XF120K
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CS4050205M
Abstract: 405nm 5mW laser diode 405nm 20mW TS 5225 405nm laser diode 405nm Laser 5 mw
Text: CS4050205M 406nm Compact Laser Diode Key features Visible light λ= 405nm Output powers =20mW Package type=5.6mmΦ High reliability Applications Blu-ray Disc/HD DVD drive Other new application Laser Diode Solutions CS4050205M is a MOCVD grown 405nm band GaN laser diode. It's an
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CS4050205M
406nm
405nm
CS4050205M
divers-vis/lcs/cs4050205m
405nm 5mW laser diode
405nm 20mW
TS 5225
405nm laser diode
405nm Laser 5 mw
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semikron skiip 1242 gb 120
Abstract: F 407 Diode semikron 1242 gb 120 SKIIP CASE S4 SKIIP DRIVER 1242 skiip gb 120 SKIIPPACK 1242gb semikron skiip 1242 D1242
Text: SKiiP 1242 GB 120 - 407 CTV Absolute Maximum Ratings Symbol Conditions 1 IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM tp = 10 ms; sin.; Tj = 150 °C
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\marketin\datenbl\skiippac\sensor\d1242gb
semikron skiip 1242 gb 120
F 407 Diode
semikron 1242 gb 120
SKIIP CASE S4
SKIIP DRIVER 1242
skiip gb 120
SKIIPPACK
1242gb
semikron skiip 1242
D1242
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Untitled
Abstract: No abstract text available
Text: [ YTB-SC0016-02 ] 2012/10/16 Violet Laser Diode for External Cavity NDVA216T Test Sample Features Outline Dimension • For External Cavity Laser with Low Reflection Coating on front facet • Optical Output Power: 45mW • Can Type: 5.6 mm Floating Mounted with Photo Diode and Zener Diode
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YTB-SC0016-02
NDVA216T
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Untitled
Abstract: No abstract text available
Text: [ YTB-SC0016-02 ] 2012/10/16 1 Violet Laser Diode for External Cavity1 NDVA216T Test Sample 1 1 2Features Outline Dimension • For External Cavity Laser with Low Reflection Coating on front facet • Optical Output Power: 45mW • Can Type: φ 5.6 mm Floating Mounted with Photo Diode and Zener Diode
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YTB-SC0016-02
NDVA216T
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4245
Abstract: SMD M1B BAT56 SMD M1B diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET BAT56 Schottky barrier diode Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES • Low leakage current
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BAT56
SCD24
4245
SMD M1B
BAT56
SMD M1B diode
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diode 1334
Abstract: 1334 diode power diode with piv of 30v CA3141E CA3141 high voltage diodes MS-001-BB VF10 e16 diode 533 1334 diode
Text: CA3141 S E M I C O N D U C T O R High-Voltage Diode Array For Commercial, Industrial and Military Applications July 1996 Features Description • Matched Monolithic Construction - VF Match Each Diode Pair . . . . 0.55mV At IF = 1mA The CA3141E High Voltage Diode Array Consists of ten general purpose high reverse breakdown diodes. Six diodes are
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CA3141
CA3141E
CA3141
1-800-4-HARRIS
diode 1334
1334 diode
power diode with piv of 30v
high voltage diodes
MS-001-BB
VF10
e16 diode
533 1334 diode
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smd diode 708
Abstract: SMD M1B diode M1B Diode smd CD 4938 Silicon Schottky Diode sod123 SMD M1B str 541 BAT93 SCD24 ir 7811
Text: DISCRETE SEMICONDUCTORS DATA SHEET BAT93 Schottky barrier diode Product specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Product specification Schottky barrier diode FEATURES • Ultra-fast switching speed
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BAT93
SCD24
smd diode 708
SMD M1B diode
M1B Diode smd
CD 4938
Silicon Schottky Diode sod123
SMD M1B
str 541
BAT93
SCD24
ir 7811
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SP724AH
Abstract: SP724AHT General Electric scr SOT-23 SP724 triggering scr with microprocessor SCR AUTOMOTIVE APPLICATIONS SCR C 4458 automotive SCR digital triggering scr sot-23 VX
Text: SP724 Data Sheet SCR/Diode Array for ESD and Transient Over-Voltage Protection [ /Title SP724 /Subject (SCR/ Diode Array for ESD and Transient OverVoltage Protection) /Autho r () /Keywords (TVS, Transient Suppression, Protection, Automotive, Load Dump,
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SP724
SP724
20VDC.
1-800-4-HARRIS
SP724AH
SP724AHT
General Electric scr SOT-23
triggering scr with microprocessor
SCR AUTOMOTIVE APPLICATIONS
SCR C 4458
automotive SCR
digital triggering scr
sot-23 VX
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zener diode RD2.2S
Abstract: RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P
Text: Diode Zener Diode • Zener Diode Quick Reference 1/2 Vz (V) P (W) TYP. 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 Package 0.2 0.15 RD4.7UJ RD5.1UJ
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RD10UJ
RD11UJ
RD12UJ
RD13UJ
RD15UJ
RD16UJ
RD18UJ
RD20UJ
RD22UJ
RD24UJ
zener diode RD2.2S
RD2.0HS
rd2.2m
nec 10f
RD16MW
str 450 a
RD4.3HS
NEC Zener diode RD3.0M
RD3.0HS
RD51P
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AN4839
Abstract: DS2107SY DS2107SY40 DS2107SY41 DS2107SY42 DS2107SY43 DS2107SY44 DS2107SY45
Text: DS2107SY DS2107SY Rectifier Diode Replaces JOctober 2001 version, DS4173-4.0 DS4173-4.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4500V ■ High Surge Capability IF AV 3329A IFSM APPLICATIONS 52500A ■ Rectification ■ Freewheel Diode
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DS2107SY
DS4173-4
2500A
DS2107SY45
DS2107SY44
DS2107SY43
DS2107SY42
DS2107SY41
AN4839
DS2107SY
DS2107SY40
DS2107SY41
DS2107SY42
DS2107SY43
DS2107SY44
DS2107SY45
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6-Phase
Abstract: No abstract text available
Text: DS2107SY DS2107SY Rectifier Diode Replaces JOctober 2001 version, DS4173-4.0 DS4173-4.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4500V ■ High Surge Capability IF AV 3329A IFSM APPLICATIONS 52500A ■ Rectification ■ Freewheel Diode
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DS2107SY
DS4173-4
2500A
DS2107SY45
DS2107SY44
DS2107SY43
DS2107SY42
DS2107SY41
6-Phase
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DS2107SY
Abstract: DS2107SY40 DS2107SY41 DS2107SY42 DS2107SY43 DS2107SY44 DS2107SY45
Text: DS2107SY DS2107SY Rectifier Diode Replaces JOctober 2001 version, DS4173-4.0 DS4173-4.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4500V ■ High Surge Capability IF AV 3329A IFSM APPLICATIONS 52500A ■ Rectification ■ Freewheel Diode
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DS2107SY
DS4173-4
2500A
DS2107SY45
DS2107SY44
DS2107SY43
DS2107SY42
DS2107SY41
DS2107SY
DS2107SY40
DS2107SY41
DS2107SY42
DS2107SY43
DS2107SY44
DS2107SY45
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Untitled
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 600
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25deg
100deg
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Untitled
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 100
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25deg
100deg
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SSCNA100
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 1000
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100deg
SSCNA100
SSCNA100
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triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD
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1S2835
1S2836
1S2837
1S2838
1SS123
1SS220
1SS221
1SS222
1SS223
2SA811A
triac tic 236
SCR U 537
MP25 transistor
transistor su 312
GA1L32
3 pin mini mold transistor
2SJ19
FA114M
2SA1611
Z 103 TRIAC
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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semikron skiip 1242 gb 120
Abstract: SKiiP 1242 GB 120 . 407 CTV N 407 Diode SKIIP DRIVER 1242 F 407 Diode
Text: s e M IK R O n SKiiP 1242 GB 120 - 407 CTV Absolute Maximum Ratings Symbol | Conditions 1> Values Units 12 0 0 V 900 V 1200 A °c V A A A kA2s IQBT & Inverse Diode V c es V c c 9 lc T i3) Viso!41 If I fm I fsm A Diode) Operating DC link voltage Theatsink —2 5 °C
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900tion
semikron skiip 1242 gb 120
SKiiP 1242 GB 120 . 407 CTV
N 407 Diode
SKIIP DRIVER 1242
F 407 Diode
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