T408F
Abstract: T101f T408 URM 95 tv 256 diode
Text: A E G- AK TI EN GE S E L L S C H A F T Ö1C D H 005^415 0005T03 T • AE6<5 T 408 F T 409 F Typenreihe/Type range T408F T409F 600 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Udhm. Urrm Periodische Vorwärts-und Rückwärts-Spitzensperrspannung
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T408F
T409F
T409F
T101f
T408
URM 95
tv 256 diode
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AEG T 408
Abstract: T408F 25CC T408 40f11 ALPS ugt aeg tt AEG T 178
Text: 0029426 A E G CORP ai DE I D D a c14Eb 0 0 0 5 ^ 0 3 5 | T408 F T409 F Typenreihe/Type range T408F T409F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Udrm. Urrm P e rio d is c h e V o rw ä rts -u n d Maximum permissible values R ü c k w ä rts -S p itz e n s p e rrs p a n n u n g
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T408F
T408F
T409F
AEG T 408
25CC
T408
40f11
ALPS ugt
aeg tt
AEG T 178
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DIODE 409 LM
Abstract: TP20
Text: SIEMENS SFH 409 INFRARED EMITTER Maximum Ratings FEATURES • Radiant Intensity Selections SFH 409*1, 6.3-12.5 mW/sr SFH 409-2, ¿10 mW/sr • High Reliability • T1 3 mm Package • .100” (2.54 mm) Lead Spacing • High Pulse Power • Long Term Stability
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D03316P-472
Abstract: up 6261 CHIP T 409 ES 20-PIN EL7564 EL7564CM EL7564CRE VJ0805Y104KXXA 330uF 35 v capacitor el75xx
Text: ES EW D Using the EL7564 Demo Board IGNS OR N ED F 5 4 D N M M E E E E L7 5 EC O Technical Brief S R T NO May 23, 2003 Introduction TB409 This demo board is operated at about 350kHz switching frequency. The input voltages are 4.5V to 5.5V. This document outlines the design consideration and lists the bill
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EL7564
L7554
TB409
350kHz
D03316P-472
up 6261
CHIP T 409 ES
20-PIN
EL7564CM
EL7564CRE
VJ0805Y104KXXA
330uF 35 v capacitor
el75xx
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dg4080y
Abstract: DG40S 10501 ot 409 DG408 DG408AK DG408DJ DG409 DG409DY HP3571A
Text: DG408/409 “ ¿l&Z8-Channel/Dual 4-Channel High Performance CMOS Analog Multiplexers FEATURES BENEFITS APPLICATIONS • Low id s on (100 f l max) • low Charge Injection • Reduced Switching Errors • Reduced Glitching • Data Acquisition Systems • Audio Signal Routing and
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DG408/409
DG408
dg4080y
DG40S
10501
ot 409
DG408AK
DG408DJ
DG409
DG409DY
HP3571A
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EM 4093
Abstract: No abstract text available
Text: bOE D ÔS35büS ÜQ4titi07 3 m ISIEG T^/-// SFH 409 SIEMENS INFRARED EMITTER SIEMENS AKTIENÛESELLSCHAF Package Dimensions in Inches mm Surface not flat - 204 (5 2) 177 (4 5) 024 (.6) .0 1 6 ( 4 ) 100 (2 54) .0 2 8 (7 ) 0 1 6 (4 ) f L a 1 2 2 (3 1) h w 114 (2 9 )
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Q4titi07
EM 4093
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sfh diode
Abstract: sfh siemens Hall Siemens
Text: SIEMENS SFH 409 INFRARED EMITTER FEATURES Maximum Ratings • Radiant Intensity Selections SFH 409-1, 6 .3 -1 2.S mW/sr SFH 409-2, 1 0 -2 0 mW/sr SFH 409-3, ¿16 mW/sr Operating and Storage Temperature Range Top, TSTe . -55° to +100“C
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100mA,
100ns)
TV-25"
sfh diode
sfh siemens
Hall Siemens
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EM 4093 001
Abstract: EM 4093 sr 160 DIODE
Text: SIEMENS SFH 409 INFRARED EMITTER Package Dimensions in Inches mm 2 0 4 (5 2 ) .0 2 4 ( 6) .0 1 6 (4 ) 028 ( 0 1 6 (4 ) 031 <•«) 0 1 6 (4 ) 100 (2 S4) 071 (1 8 ) 0 4 7 (1 2) 1 14 0(29) 1 0 6 1 (2 7 ) FEATURES Maximum Ratings • Radiant Intensity Selections
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Untitled
Abstract: No abstract text available
Text: SFH 409 SIEMENS INFRARED EMITTER Package Dimensions in Inches mm 204 (5 2) 024 ( 6) 0 1 6 (4 ) 1S7 (4 0) 141 (3 6) 028 ( 7) 0 1 6 (4 ) *122(3 1) 100 (2 54) 114(2 9) 024(6)11 071 (1 6) 047(1 2) 0 1 6 (4 )^ ^ ^ 1 140(29) 1.061 (27) FEATURES M a x im u m R atings
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SFH409
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Untitled
Abstract: No abstract text available
Text: 3DE P • 7^ 5 3 7 OQgqflqi S G S -T H O M S O N I Li(g?GMO(gS 4 ■ n _ r 3 <ì - i S s~ T ì ^ hoMSo n — SGS30MA050D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE SGS30MA050D1 • • • • • VDSS 500 V ^DS(on 0.20 ß 30 A ISOLATED POWERMOS MODULE
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SGS30MA050D1
A050D1
7SB1B37
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409LT
Abstract: marking 9l sot23
Text: SILICON EPICAP DIODES MMBV409LT1* . . . desig n ed fo r general fre q u e n cy c o n tro l and tu n in g a p p lic a tio n s ; p ro v id in g so lid -sta te re lia b ility in re p la ce m en t o f m echanical tu n in g m ethods. MV409* • H igh Q w ith G uaranteed M in im u m Values at VHF Frequencies
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MMBV409LT1*
MV409*
OT-23
O-236AB)
MMBV409LT1,
MV409
409LT
marking 9l sot23
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powerex scr
Abstract: powerex cd62 powerex cd67 c067
Text: CD62_ _ 15 CD67 15_ P jmerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/Diode POW-R-BLOK Module 150 Amperes/1600 Volts C D 6 2 _ _ 1 5, C D 6 7 _ _ 1 5 S C R /D io d e P O W -R -B L O K ™ M o d u le 150 Amperes/1600 Volts
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Amperes/1600
peres/1600
powerex scr
powerex cd62
powerex cd67
c067
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local osc ic ta7640ap
Abstract: am mixer ic ta7640ap toshiba 17255 FM FRONT bpw B6A TA7640AP ta7640 TA7371 10.7ma5 sumida ift coil TA7371AP
Text: n M 90 97 24 7 TOSHIBA. ELECTRONIC 02E 17246 D TA7371AP/AF T - 1 7 - 0 5 - 0 5 FM FRONT-END 1.5V USE Unit in mm The TA7371AP/AF are FM "FRONT END ICs designed for TA7371AP low voltage operation (1.5V), which are suitable for 2& 0 MAX 01.0 Stereo Headphone Radio or Radio Cassette.
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TA7371AP/AF
TA7371AP/AF
H7547
GD17ESS
7371AP/AF
70MHz
local osc ic ta7640ap
am mixer ic ta7640ap
toshiba 17255
FM FRONT bpw B6A
TA7640AP
ta7640
TA7371
10.7ma5
sumida ift coil
TA7371AP
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2SK408
Abstract: POWER MOS FET 2sk408 2SK409 VM-50V D15mm
Text: blE » • 4^1=205 0013055 033 ■ HITM 2SK408,2SK409 HI T ACH I/{OPTOELECTRONIC S IL IC O N N -C H A N N EL M O S F ET 2SK408 HF/VHF POWER AMPLIFIER 2SK409 IE ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Included Gate Protection Diode.
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2SK408
2SK409
2SK409
O-220AB)
28MHz
--50pF
ID-12mm.
2SK408
POWER MOS FET 2sk408
VM-50V
D15mm
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Untitled
Abstract: No abstract text available
Text: MG150J7KS50 TOSHIBA MG1 50J7KS50 TO SH IBA GTR MODULE SILICON N CHAN N EL IGBT HIGH POW ER SW ITCHING APPLICATIO NS MOTOR CO N TRO L APPLICATIO NS The Electrodes are Isolated from Case. High Input Impedance 7 IGBTs B uilt into 1 Package. Enhancement-Mode H igh Speed Type IGBT Inverter Stage
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MG150J7KS50
50J7KS50
96TQ01EAA1
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12V dc to 60V dc circuit diagram
Abstract: IC LM 317 LM-1952
Text: CS8240 CS8240 500mA High Side PNP Driver with On-Chip Flyback Diode Description The CS8240 is a fast, PNP high side driver capable of delivering up to 500mA into a resistive or inductive load in harsh automotive or industrial environments. An internal flyback
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CS8240
500mA
CS8240
CS8240YTFVA5
O-220
12V dc to 60V dc circuit diagram
IC LM 317
LM-1952
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IC LM 317
Abstract: CS8240 transistor LM 317
Text: CS8240 CS8240 500mA High Side PNP Driver with On-Chip Flyback Diode Description The CS8240 is a fast, PNP high side driver capable of delivering up to 500mA into a resistive or inductive load in harsh automotive or industrial environments. An internal flyback
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CS8240
500mA
CS8240
CS8240YTFVA5
O-220
IC LM 317
transistor LM 317
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LM-1952
Abstract: L9350 current limit switch 12V 12V dc to 60V dc circuit diagram
Text: CS-8240 CS-8240 500mA High Side PNP Driver with On Chip Flyback Diode Description The CS-8240 is a fast, PNP high side driver capable of delivering up to 500mA into a resistive or inductive load in harsh automotive or industrial environments. An internal flyback
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CS-8240
500mA
CS-8240
CS-8240TF5
O-220
LM-1952
L9350
current limit switch 12V
12V dc to 60V dc circuit diagram
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PDF
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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BS9000,
D3007
HE4000B
80RIBUTION
BS9000
BPW22A
cm .02m z5u 1kv
pin configuration of BFW10
la4347
B2X84
TDA3653 equivalent
TRIAC TAG 9322
HEF40106BP equivalent
fx4054 core
dsq8
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049G1
Abstract: No abstract text available
Text: PHOTO RELAY TLP595A T L P 5 9 5 A TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP595A consists of an alum inum gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package.
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TLP595A
TLP595A
300mA
2500Vrms
UL1577,
E67349
300mA
049G1
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IRF9520N
Abstract: IRFI9520N
Text: PD - 9.1527 IRFI9520N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS on = 0.48Ω
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IRFI9520N
-100V
O-220
IRF9520N
IRFI9520N
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LTspice
Abstract: 23/zoom 505 schematic
Text: M A NU A L , M E T HO D S A ND A P P L I CAT I O N S SIMULATOR THE LTSPICE IV THE LTSPICE IV 1st edition Swiridoff Verlag ISBN: 978-3-89929-258-9 SIMULATOR GILLES BROCARD MANUAL, METHODS AND APPLICATIONS Preface by Mike Engelhardt 1st edition Preface It is an honor to write a preface for Gilles Brocard. I appreciate his work writing this book and hope you benefit from
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IRFI1310N
Abstract: irfi1310 IRF1310N 4.5v to 100v input regulator
Text: PD - 9.1611A IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V RDS on = 0.036Ω G Fifth Generation HEXFETs from International Rectifier
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IRFI1310N
O-220
IRFI1310N
irfi1310
IRF1310N
4.5v to 100v input regulator
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IRF1310N
Abstract: IRFI1310N 4.5v to 100v input regulator
Text: PD - 9.1611A IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V RDS on = 0.036Ω G Fifth Generation HEXFETs from International Rectifier
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IRFI1310N
O-220
IRF1310N
IRFI1310N
4.5v to 100v input regulator
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