BCS028N06NS
Abstract: 028N06NS DC1502
Text: DEMO MANUAL DC1502A LTC4359HDCB 12V/20A Ideal Diode with Reverse Input Protection DESCRIPTION Demonstration circuit 1502A showcases the LTC 4359 ideal diode controller with reverse input protection. The board includes two independent LTC4359 ideal diode circuits, sharing a common ground and operating over a
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DC1502A
LTC4359HDCB
2V/20A
LTC4359
dc1502af
BCS028N06NS
028N06NS
DC1502
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Untitled
Abstract: No abstract text available
Text: DEMO MANUAL DC1899A LTC4228-1/LTC4228-2 Dual Ideal Diode and Hot Swap Controller DESCRIPTION Demonstration circuit 1899A controls two independent power rail circuits each with Hot Swap and ideal diode functionality provided by the LTC4228-1/LTC4228-2 dual
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DC1899A
LTC4228-1/LTC4228-2
LTC4228-1/LTC4228-2
DC1899A
LTC4228
dc1899af
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R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
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CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
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Untitled
Abstract: No abstract text available
Text: PD -2604A HFA30PB120 Ultrafast, Soft Recovery Diode HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and
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-2604A
HFA30PB120
120nC
O-247AC
HFA16PB120
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES n n n n n n n DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode Wide Operating Voltage Range: 4V to 80V Reverse Input Protection to – 40V Low 9µA Shutdown current
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LTC4359
LT4256
LTC4260
LTC4223-1/LTC4223-2
4359f
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Irf 1540 G
Abstract: HFA16PB120 HFA30PB120 IRFP250
Text: PD -2604A HFA30PB120 Ultrafast, Soft Recovery Diode HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and
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-2604A
HFA30PB120
120nC
O-247AC
HFA16PB120
Irf 1540 G
HFA30PB120
IRFP250
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HFA16PB120
Abstract: HFA30PB120 IRFP250
Text: PD -2604A HFA30PB120 Ultrafast, Soft Recovery Diode HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and
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-2604A
HFA30PB120
120nC
O-247AC
HFA16PB120
12-Mar-07
HFA30PB120
IRFP250
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Untitled
Abstract: No abstract text available
Text: PD - 95867B IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf
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95867B
IRF6691
IRF6691
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Untitled
Abstract: No abstract text available
Text: PD - 95867D IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf
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95867D
IRF6691
IRF6691
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FDS3732
Abstract: 3b transistor
Text: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current
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LTC4359
4359fa
com/LTC4359
FDS3732
3b transistor
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LTC4359CMS8
Abstract: No abstract text available
Text: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current
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LTC4359
LT4256-1/LT4256-2
LTC4260
LTC4364
4359fb
com/LTC4359
LTC4359CMS8
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Untitled
Abstract: No abstract text available
Text: PD - 95867D IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf
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95867D
IRF6691
IRF6691
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IRF6691TR1
Abstract: IRF6691
Text: PD - 95867A IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf
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5867A
IRF6691
IRF6691
IRF6691TR1
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Untitled
Abstract: No abstract text available
Text: PD - 95867C IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf
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95867C
IRF6691
IRF6691
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IRF6691
Abstract: IRF6691TR1
Text: PD - 95867 IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf
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IRF6691
IRF6691
IRF6691TR1
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IRF6691
Abstract: IRF6691TR1
Text: PD - 95867D IRF6691 HEXFET Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf
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95867D
IRF6691
IRF6691
IRF6691TR1
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IN751a
Abstract: 3b transistor IN759A LTC4363 IN751 FDS3732 solar voltage regulator 24v 48v 150A mosfet switch BSC011N03LS block diagram 12V solar charge controller
Text: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown current n Low 150 A Operating Current
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LTC4359
4359f
IN751a
3b transistor
IN759A
LTC4363
IN751
FDS3732
solar voltage regulator 24v
48v 150A mosfet switch
BSC011N03LS
block diagram 12V solar charge controller
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STW47NM60ND
Abstract: 47NM60ND 365R 47NM60
Text: STW47NM60ND N-channel 600 V, 0.075 Ω, 35 A TO-247 FDmesh II Power MOSFET with fast diode Features Order code VDSS @ TJMAX RDS(on) max ID STW47NM60ND 650 V < 0.088 Ω 35 A • The worldwide best RDS(on)*area amongst the fast recovery diode devices ■
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STW47NM60ND
O-247
STW47NM60ND
47NM60ND
365R
47NM60
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CMZ5945B
Abstract: LTC43642 0644A LTC4364IDE-2 LTspice 7.1v zener LTC4364IMS-2 LTC4366 LTC4364 R7A marking
Text: LTC4364-1/LTC4364-2 Surge Stopper with Ideal Diode FEATURES n n n n n n n n n n n DESCRIPTION Wide Operating Voltage Range: 4V to 80V Withstands Surges Over 80V with VCC Clamp Adjustable Output Clamp Voltage Ideal Diode Controller Holds Up Output Voltage During Input Brownouts
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LTC4364-1/LTC4364-2
LTC4364
LTC4364-1
LTC4364-2
4356-1/LT4356-2
LT4356-3
LTC4363
LTC4366
LTC4357
CMZ5945B
LTC43642
0644A
LTC4364IDE-2
LTspice
7.1v zener
LTC4364IMS-2
R7A marking
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4321F
Abstract: TG12 LT432
Text: LT4321 PoE Ideal Diode Bridge Controller Features Description n n n The LT 4321 is a dual ideal diode bridge controller that enables a Power over Ethernet PoE powered device (PD) to receive power in either voltage polarity from RJ-45 data pairs, spare pairs, or both. The LT4321 and
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LT4321
RJ-45
LT4321
LTC4355
LTC4359
LTC4290/LTC4271
4321f
com/LT4321
4321F
TG12
LT432
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CMZ5945B
Abstract: LTC4364IMS-2
Text: LTC4364-1/LTC4364-2 Surge Stopper with Ideal Diode FEATURES n n n n n n n n n n n DESCRIPTION Wide Operating Voltage Range: 4V to 80V Withstands Surges Over 80V with VCC Clamp Adjustable Output Clamp Voltage Ideal Diode Controller Holds Up Output Voltage During Input Brownouts
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LTC4364-1/LTC4364-2
LTC4364-2)
14-Lead
16-Lead
LTC4352
LTC4354
LTC4355
LTC4365
436412f
CMZ5945B
LTC4364IMS-2
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G30N60
Abstract: IXGH30N60C3C1 20A 300V Schottky Diode IF110 IXGP30N60C3C1 IGBT 600V 40A diode 30N60C 40ATD IXGA30N60C3C1 IXGP30N60C3
Text: Preliminary Technical Information IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) High Speed PT IGBTs for 40 - 100kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-263 (IXGA) G E Symbol Test Conditions
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IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
IC110
100kHz
O-263
O-220
IF110
G30N60
IXGH30N60C3C1
20A 300V Schottky Diode
IF110
IXGP30N60C3C1
IGBT 600V 40A diode
30N60C
40ATD
IXGA30N60C3C1
IXGP30N60C3
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IXGA30N60C3C1
Abstract: IXGH30N60C3C1 IXGP30N60C3C1 30N60C3
Text: IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings
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IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
IC110
100kHz
O-263
IF110
O-220AB
O-247
IXGH30N60C3C1
30N60C3
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings
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IC110
IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
O-263
100kHz
O-220AB
IF110
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