1E-017
Abstract: diode in 4937
Text: 1N 4933.1N 4937 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter ,2 Axial lead diode Fast silicon rectifier diodes 1N 4933.1N 4937 Forward Current: 1 A
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Abstract: No abstract text available
Text: SENSITRON SD175SC200A/B/C SEMICONDUCTOR Technical Data Data Sheet 4937, Rev.- Ultra Fast Trr < 24 nsec SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
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SD175SC200A/B/C
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diode 4937
Abstract: No abstract text available
Text: SENSITRON SD175SC200A/B/C SEMICONDUCTOR Technical Data Data Sheet 4937, Rev.- Ultra Fast Trr < 24 nsec SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
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SD175SC200A/B/C
diode 4937
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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40N60A4D
Abstract: 40N60A4 HGTG*N60A4D 40N60A HGT1Y40N60A4D MOSFET 40A 600V HGT5A40N60A4D LD26 TA49347
Text: HGT5A40N60A4D / HGT1Y40N60A4D Data Sheet May 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D and HGT1Y40N60A4D are MOS gated high voltage switching devices combining the best features of a MOSFET and a bipolar transistor. These
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HGT5A40N60A4D
HGT1Y40N60A4D
HGT1Y40N60A4D
150oC.
TA49347.
100kHz
200kHz
40N60A4D
40N60A4
HGTG*N60A4D
40N60A
MOSFET 40A 600V
LD26
TA49347
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40N60A4D
Abstract: TA49347 40N60A4 MOSFET 40A 600V HGT5A40N60A4D LD26
Text: HGT5A40N60A4D Data Sheet February 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input
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HGT5A40N60A4D
HGT5A40N60A4D
150oC.
TA49347.
100kHz
200kHz
40N60A4D
TA49347
40N60A4
MOSFET 40A 600V
LD26
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40N60A4
Abstract: 40N60A4D MOSFET 40A 600V HGT5A40N60A4D LD26 TA49347 40N60A TO-247ST
Text: HGT5A40N60A4D Data Sheet February 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input
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HGT5A40N60A4D
HGT5A40N60A4D
150oC.
TA49347.
100kHz
200kHz
40N60A4
40N60A4D
MOSFET 40A 600V
LD26
TA49347
40N60A
TO-247ST
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40N60A4D
Abstract: DIODE 809 200A 40N60A4 Capacitor 400v 80A HGT5A40N60A4D TA49347
Text: HGT5A40N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input
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HGT5A40N60A4D
HGT5A40N60A4D
150oC.
TA49347.
40N60A4D
DIODE 809 200A
40N60A4
Capacitor 400v 80A
TA49347
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diode 4937
Abstract: diode 1N 4937 diode IN 4937
Text: 1N 4933.1N 4937 ,2 Axial lead diode Fast silicon rectifier diodes 1N 4933.1N 4937 Forward Current: 1 A Reverse Voltage: 50 to 600 V Features 8 9 3 9 9 + /+ 3 9 9 + 9
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Untitled
Abstract: No abstract text available
Text: 1N 4933.1N 4937 ,2 Axial lead diode Fast silicon rectifier diodes 1N 4933.1N 4937 Forward Current: 1 A Reverse Voltage: 50 to 600 V Features 8 9 3 9 9 + /+ 3 9 9 + 9
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in 4937
Abstract: No abstract text available
Text: 1N 4933.1N 4937 ,2 Axial lead diode Fast silicon rectifier diodes 1N 4933.1N 4937 Forward Current: 1 A Reverse Voltage: 50 to 600 V Features 8 9 3 9 9 + /+ 3 9 9 + 9
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1N4148 1206
Abstract: 1n4148 0805 Fenghua Advanced Technology 1n4148 LL34
Text: 广东风华高新科技股份有限公司 Fenghua Advanced Technology holding Co., Ltd 厚膜片式二极管 THICK FILM CHIP DIODE 特点 Features 符合 ROHS 指令要求 According with RoHS standard 等同于 1N4148 电子特性 The electrical performance is equal as that of 1N4148.
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1N4148
1N4148.
FHD41481206
LL-34
FHD41481206
1N4148 1206
1n4148 0805
Fenghua Advanced Technology
1n4148 LL34
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HP 5082-7415
Abstract: MCI4489 5082-7415 HP 7415 MC68HC811A2 j 5804 MC14489 1 -10v led dimmer d 12 pin 2 digit LED display HP 5082 fdk ct
Text: MOTOROLA S EM IC O N D U C TO R TECHNICAL DATA MC14489 Advance Information M u lti-C h a ra c te r L E D D isp lay/Lam p D river rffi CMOS The MC14489 is a flexible light-emitting-diode driver w hich directly interfaces to individ ual lamps, 7-segment displays, or various combinations of both. LEDs wired with common
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MC14489
HP 5082-7415
MCI4489
5082-7415
HP 7415
MC68HC811A2
j 5804
1 -10v led dimmer d
12 pin 2 digit LED display HP 5082
fdk ct
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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finisar i2c
Abstract: finisar 2025 finisar fiber optic transmitter module finisar AN-2025 finisar app note FTR1319 FTR-8519
Text: Finisar App Note AN-2025 Using the Finisar GBIC I2C Test/Diagnostics Port INTRODUCTION Finisar’s new line of optical GBIC modules incorporates the real-time optical link control system that Finisar pioneered in its previous generation of fiber optic transceivers. Finisar has extended the capabilities of the module definition
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AN-2025
AT24C01A/02/04/08/16
MIM0503a
finisar i2c
finisar 2025
finisar fiber optic transmitter module
finisar AN-2025
finisar app note
FTR1319
FTR-8519
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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diode BA 159
Abstract: in4937
Text: BA 157.BA 159 Fast Silicon Rectifier Schnelle Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 400. 1000 V Plastic case Kunststoffgehäuse DO-41 Weight approx. Gewicht ca. —f6 O.E 0.4 g
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DO-41
UL94V-0
R0D1RS14
DGG174
diode BA 159
in4937
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TRANSISTOR D1960
Abstract: Eyal Microwave Industry OZ 9966 OZ 9938 dlva Radar Warning Receiver F9140AH fm MODULATOR 4046 SPA-X1-400 FR-2260-UK
Text: GENERAL MICROWAVE PRODUCT CATALOG Model Number Index .2 Product Index .5
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N4937
Abstract: No abstract text available
Text: 1 N 4933.1 N4937 Schnelle Silizium Gleichrichter Fast Silicon Rectifier 1A Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 50. 600 V Plastic case Kunststoffgehäuse - DO-41 Weight approx. Gewicht ca. ¿ 0.8 0.4 g
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N4937
DO-41
UL94V-0
N4933
N4934
N4935
N4936
R0D1RS14
DGG174
N4937
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4937n
Abstract: S 2563 NTMS4937NR2G s2563 n-channel mosfet vgs 3v
Text: NTMS4937N Power MOSFET 30 V, 13.6 A, N−Channel, SO−8 Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NTMS4937N
NTMS4937N/D
4937n
S 2563
NTMS4937NR2G
s2563
n-channel mosfet vgs 3v
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Untitled
Abstract: No abstract text available
Text: NTMS4937N Power MOSFET 30 V, 13.6 A, N−Channel, SO−8 Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NTMS4937N
NTMS4937N/D
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Untitled
Abstract: No abstract text available
Text: NTTFS4937N Power MOSFET 30 V, 75 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NTTFS4937N
NTTFS4937N/D
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4937n
Abstract: NTMFS4937NT1G NTMFS4937NT3G
Text: NTMFS4937N Power MOSFET 30 V, 70 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NTMFS4937N
NTMFS4937N/D
4937n
NTMFS4937NT1G
NTMFS4937NT3G
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4937n
Abstract: No abstract text available
Text: NTMFS4937N Power MOSFET 30 V, 70 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NTMFS4937N
NTMFS4937N/D
4937n
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