2013GB122-4DL
Abstract: PX16
Text: SKiiP 2013GB122-4DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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2013GB122-4DL
2013GB122-4DL
PX16
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PX16
Abstract: 2403GB122-4DL
Text: SKiiP 2403GB122-4DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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2403GB122-4DL
PX16
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780 AC
Abstract: semikron skiip 3 PX16
Text: SKiiP 2013GB172-4DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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2013GB172-4DL
780 AC
semikron skiip 3
PX16
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Untitled
Abstract: No abstract text available
Text: SKiiP 2003GB171-4DW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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2003GB171-4DW
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semikron skiip 400 gb
Abstract: 780 AC semikron skiip capacitor MKP igbt skiip gb 120 PX16
Text: SKiiP 2413GB123-4DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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2413GB123-4DL
semikron skiip 400 gb
780 AC
semikron skiip
capacitor MKP igbt
skiip gb 120
PX16
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semikron skiip
Abstract: semikron skiip 400 gb 2013GB173-4DL SemiSel skiip gb 120 PX16 SKIIP 125
Text: SKiiP 2013GB173-4DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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2013GB173-4DL
semikron skiip
semikron skiip 400 gb
2013GB173-4DL
SemiSel
skiip gb 120
PX16
SKIIP 125
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1613GB171-4DL
Abstract: PX16
Text: SKiiP 1613GB171-4DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1613GB171-4DL
1613GB171-4DL
PX16
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semikron skiip 400 gb
Abstract: 2403GB173-4DW
Text: SKiiP 2403GB173-4DW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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2403GB173-4DW
semikron skiip 400 gb
2403GB173-4DW
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2403gb172-4dw
Abstract: semikron skiip 2403GB172-4DW 780 AC
Text: SKiiP 2403GB172-4DW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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2403GB172-4DW
2403gb172-4dw
semikron skiip 2403GB172-4DW
780 AC
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skiip gb 120
Abstract: No abstract text available
Text: SKiiP 2013GB122-4DL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms
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2013GB122-4DL
2013GB122-4DL
skiip gb 120
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2013GB172
Abstract: skiip gb 120 2013GB172-4DL iec 60721-3-3
Text: SKiiP 2013GB172-4DL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms
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2013GB172-4DL
2013GB172-4DL
2013GB172
skiip gb 120
iec 60721-3-3
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mo299
Abstract: TAC10 lt416 LHS01
Text: LM96063 Remote Diode Digital Temperature Sensor with Integrated Fan Control General Description • Integrated PWM fan speed control output supports high The LM96063 is remote diode temperature sensors with integrated fan control that includes remote diode sensing. The
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LM96063
2N3904,
mo299
TAC10
lt416
LHS01
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2N3904 331 transistor
Abstract: lm63
Text: LM63 LM63 +/-1C/+/-3C Accurate Remote Diode Digital Temperature Sensor withIntegrated Fan Control Literature Number: SNAS190D LM63 ±1°C/±3°C Accurate Remote Diode Digital Temperature Sensor with Integrated Fan Control General Description • 10 bit plus sign remote diode temperature data format,
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SNAS190D
2N3904,
2N3904 331 transistor
lm63
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1842m
Abstract: DIODE 4d LDD400-1P ldd200 2i125 LDD200-2P
Text: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser
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200mA
400mA
Aug-05
29-Sep-09
LDD200P-00400-A
1842m
DIODE 4d
LDD400-1P
ldd200
2i125
LDD200-2P
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DIODE 4d
Abstract: LDD200-1P ldd200 LDD400-1P LDDCAB-50 LDD200-2P DIODE 1N4001 LDD200P-00400 LDD400-3P DD200-1P
Text: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser
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200mA
400mA
Aug-05
29-Sep-09
LDD200P-00400-A
DIODE 4d
LDD200-1P
ldd200
LDD400-1P
LDDCAB-50
LDD200-2P
DIODE 1N4001
LDD200P-00400
LDD400-3P
DD200-1P
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USER-CONFIGURE
Abstract: 2N3904 LM63 LM63CIMA LM63CIMAX LM63DIMA LM63DIMAX LM63EVAL 2N3904 331 transistor 2n3904 331
Text: LM63 ±1°C/±3°C Accurate Remote Diode Digital Temperature Sensor with Integrated Fan Control General Description • 10 bit plus sign remote diode temperature data format, The LM63 is a remote diode temperature sensor with integrated fan control. The LM63 accurately measures: 1 its own
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2N3904,
USER-CONFIGURE
2N3904
LM63
LM63CIMA
LM63CIMAX
LM63DIMA
LM63DIMAX
LM63EVAL
2N3904 331 transistor
2n3904 331
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PIN Diode Basics
Abstract: PIN DIODE DRIVER CIRCUITS 2n2222 transistor pin b c e 2N2894A 2N2222 application note 2n2222 transistor datasheet depletion mode current limiter LATTICE 3000 SERIES Microwave PIN diode Switching diode 0.5
Text: APPLICATION NOTE PIN Diode Basics Introduction Basic Theory—Variable Resistance A PIN diode is essentially a variable resistor. To determine the value of this resistance, consider a volume comparable to a typical PIN diode chip, say 20 mil diameter and 2 mils thick. This chip has a
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Untitled
Abstract: No abstract text available
Text: LM64 LM64 ±1°C Remote Diode Temperature Sensor with PWM Fan Control and 5 GPIO's Literature Number: SNAS207 LM64 ± 1˚C Remote Diode Temperature Sensor with PWM Fan Control and 5 GPIO’s General Description Key Specifications The LM64 is a remote diode temperature sensor with PWM
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SNAS207
MMBT3904
TLM64
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DD400S65K1
Abstract: No abstract text available
Text: Technische Information / technical information DD400S65K1 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values ! " # " $% & ' * $% & ()* $% & ( )* " * ! # 6 17 5&' " +, & " 9 .( . (/ + 12 3 4 12,+8 5 & '
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diode G21
Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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FMMD914
BAV70
BAV74
BAV99
BAW56
100mA
diode G21
marking G21 Z5
LD4RA
BZX84-C27
BZX84C18
g21 Transistor
BZX84C3V0
BZX84
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diode Lz 66
Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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FMMD914
BAV70
BAV74
BAV99
BAW56
100mA
BZX84
FMMD3102
BZX84-C3V0
BZX84-C3V3
diode Lz 66
diode LZ. 58
BZX84C20
BZX84-C27
diode marking w8
BZX84-C5V1
BZX84C18
diode marking x6
BZX84-C15
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BAS86
Abstract: Philips Diode schottky mrc129
Text: Philips Semiconductors Product specification Schottky barrier diode BAS86 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is encapsulated in a hermetically sealed
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BAS86
711Dfl2b
BAS86
Philips Diode schottky
mrc129
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NDL7605P Series 1 310 nm OPTICAL CATV RETURN PATH APPLICATIONS InGaAsP MQW DFB LASER DIODE MODULE WITH ISOLATOR DESCRIPTION The NDL7605P Series is a 1 310 nm uncooled isolated coaxial DFB laser diode. It is especially designed for optical CATV return path applications.
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NDL7605P
P14039EJ2V
11159E
11531E
10535E
13769X
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Untitled
Abstract: No abstract text available
Text: 4DE D S BMRTTBfl 0D01i025 b E3SENI T '4 H FASCO INDS/ SENISYS CLED1 CLED1A CLED1B CLED1C Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The Clairex CLED1 is a Gallium Arsenide infrared emitting diode in a lensed hermetic TO-46 package. It emits an intense band of radia
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0D01i025
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