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Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. DIODE AND THYRISTOR MODULES ADD-A-PAK TO-240AA MODULES Up to 105 A, 1600 V, New Generation 7, Diode-Diode and Diode-SCR Configurations Available INT-A-PAK (34 MM) MODULES Up to 165 A, 1600 V, Diode-Diode and Diode-SCR Configurations
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O-240AA)
OT-227
VMN-MS6956-1408
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TSP70
Abstract: No abstract text available
Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series
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TSP2305A
TSP40GD120P
TSP25G135T
O-247
TSP25GD135T
TSP25G135P
TSP25GD135P
TSP70
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DIODE A46
Abstract: A47 diode skkh570 4092 thyristor skkt 90 A76A semipack skkh 106 SKKD380 A36 diode semipack skkt 330
Text: 1996-2012:QuarkCatalogTempNew 9/20/12 3:44 PM Page 1996 INTERCONNECT TEST & MEASUREMENT 25 SEMIPACK Isolated Diode/Diode and Thyristor/Diode Modules SEMIPACK® Isolated Diode/Diode and Single Diode Modules 27 Amp to 700 Amp RoHS SKKD 46/16 Stock No. Mfr.’s
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R22A
Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
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110VAC
ZPS60-3
R22A
transistor MTBF
OPTOCUPLER HAND BOOK
TRANSISTOR mosfet
transistor R1d
R24 transistor
optocupler
transformer mtbf
R18A
R22E
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transistor R1d
Abstract: transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS40-3 Ver: V1.1 Date: 21/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
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110VAC
ZPS40-3
transistor R1d
transistor R1A
diode FR 105
TRANSISTOR 106 d1
R22A
MTBF-ZPS40
04112
78540
R18A
217F
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XTR1N0850
Abstract: XTR1N0800 XTR1N0815-BD
Text: XTRM Series XTR1N0800 IE W HIGH-TEMPERATURE, 80V DIODE FAMILY DESCRIPTION ▲ Reverse voltage VR > 90V. ▲ Operational beyond the -60°C to +230°C temperature range. ▲ Forward current @ 230°C, VF=1.2V: o XTR1N0815: IF=165mA per diode. o XTR1N0850: IF=570mA per diode.
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XTR1N0800
XTR1N0815:
165mA
XTR1N0850:
570mA
740mV
720mV
XTR1N0800
XTR1N0850
XTR1N0815-BD
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C10V
Abstract: C25V SVC333 IN 4004 diode diode IN 4004 3662 diode
Text: Ordering number:EN935B SVC333 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode
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EN935B
SVC333
SVC333
SVC333]
C10V
C25V
IN 4004 diode
diode IN 4004
3662 diode
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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BAP51-02
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP51-02
OD523
MAM405
OD523)
125004/00/02/pp6
BAP51-02
BP317
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109 DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP50-02
OD523
MAM405
OD523)
613512/01/pp8
109 DIODE
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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byt51a
Abstract: No abstract text available
Text: BYT51. VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • Glass passivated junction • Hermetically sealed package • Low reverse current Applications Rectification diode Mechanical Data 949539 Case: SOD-57 Sintered glass case
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BYT51.
OD-57
MIL-STD-750,
BYT51A
BYT51B
BYT51D
BYT51G
BYT51J
BYT51K
BYT51M
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skiip 832 gb 120
Abstract: skiip 832 gb 120 000c SKIIP CASE S4 diode S4 05 SKIIP832GB
Text: SKiiP 832 GB 120 - 406 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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hc4-dc12v
Abstract: HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F
Text: HC Has built-in diode to absorb surge For use in semiconductor circuits HC RELAY WITH DIODE TYPE FOR DC FEATURES 1. The built-in diode absorbs surge voltage arising when the coil goes to the off state (for DC type). Diode characteristics; Reverse breakdown voltage: 1,000V,
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25Y-3N,
25Y-3S
25-3X,
1071-A
25-3S
25-3TA
25-M3
hc4-dc12v
HC4-DC24V
HC2-DC24V
HC2-SS-K
HC3-DC24V
HC3-DC6V-D-F
nichifu
HC4-DC24V-D
HC1-DC12V
HC2-L-DC24V-D-F
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BY448
Abstract: BY458
Text: BY448.BY458 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode \ Features • Glass passivated junction • Hermetically sealed package Applications High voltage rectification diode Efficiency diode in horizontal deflection circuits Mechanical Data
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BY448
BY458
MIL-STD-750,
BY448
D-74025
07-Jan-03
BY458
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DIODE A6 sod110
Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
Text: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation
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OD110
OD110
innovat27
SCB63
DIODE A6 sod110
sod110 package
SOD-110
BA792
philips zener diode
SOD110
BAS216
BAS221
BAT254
Zener Diode MARK 101 SOD323
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12d4
Abstract: 6da4 12d4 tube 17D4 ET-T1465 general electric
Text: 6DA4 12D4 17D4 6 D A 4 — 12D4— 17D4 DIODE TUBES ET-T1465 Page 1 4-57 FOR TV DAMPING DIODE APPLICATIONS DESCRIPTION AND RATING The 6DA4 is a single heater-cathode type diode for service as the damping diode in the horizontal-deflection circuit of television receivers. It will with
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ET-T1465
12d4
6da4
12d4 tube
17D4
ET-T1465
general electric
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5726
Abstract: diode s 360 diode full wave rectifier 6 v diode rs tube MF300
Text: 5726 S.Q. DOUBLE DIODE Special quality double diode designed for use as detector or low-current power rectifier. QUICK REFERENCE DATA Life test Mechanical quality Base Heating Heater voltage Heater current Diode current Inverse peak voltage 1000 hours Shock and vibration resistant
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25-12io8
Abstract: MDC 1200 DIODE mdc 40-14 MCO 1510 MCd 25-04 ABB thyristor modules ASEA thyristor mdc 55-04 hs 50 abb E72873
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-Module d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z5-Z3 Phase control Thyristor-Diode-Modules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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K21-0120
K21-01S0
K21-0180
K21-0265
K41-0150C
25-12io8
MDC 1200
DIODE mdc 40-14
MCO 1510
MCd 25-04
ABB thyristor modules
ASEA thyristor
mdc 55-04
hs 50 abb
E72873
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7030a
Abstract: light sensitive photo diode MTD7030A MTE1050A MTE1100 cms diode diode 518
Text: MARKTECH INTERNATIONAL lflE D • 571*1^55 GQOGBT? Q ■ PHOTO DIODE MTD7030A "T-MI-S3 SILICON PIN PHOTO DIODE ' CATHODE INDEX D — - E H M Tt 7030A is a high sensitive and high speed photo diode with PIN structure. Employment of filtered mold resin for cutting the visible light are suitable for the detectors of
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MTD7030A
800nm
MTE1050A,
MTE1100
7030a
light sensitive photo diode
MTD7030A
MTE1050A
MTE1100
cms diode
diode 518
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Untitled
Abstract: No abstract text available
Text: MARKTECH INTE RNATIONAL lflE D • 571*1^55 GQOGBT? Q ■ PHOTO DIODE MTD7030A T Ml-S 3 SILICON PIN PHOTO DIODE ' CATHODE INDEX D- E- TT MTt 7030A is a high sensitive and high speed photo diode with PIN structure. Employment of filtered mold resin for cutting the visible light are suitable for the detectors of
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MTD7030A
800nm
436-S865
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Untitled
Abstract: No abstract text available
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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Untitled
Abstract: No abstract text available
Text: bEE D • m 27S2S DD37S15 bTT HNECE N E C ELECTRONICS INC J _ LASER DIODE N D L 5738P , N D L 5 7 3 8 P 1 1 310nm InGaAsP DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLEMODE FIBER DESCRIPTION NDL5738P and NDL5738P1 are 1 310 nm laser diode coaxial module w ith singlemode fiber. It incorporates InGaAs m onitor
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27S2S
DD37S15
5738P
310nm
NDL5738P
NDL5738P1
NDL5738P,
NDL5738P1
bH57555
b427525
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