LM7906
Abstract: No abstract text available
Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
|
Original
|
LM7805/LM7912
LM7805
O-220
LM7806
LM7808
LM7809
LM7906
|
PDF
|
rd6.8a
Abstract: zener rd9.1esb2 rd5.6b RD11UM 09-5 diode RD30F RD6,8MW RD2.4E RD5.1P RD51P
Text: CD-ROM Diode CD-ROM X13769XJ2V0CD00 09-1 Diode Zener Diode • Zener Diode Quick Reference Surface-Mount Type (1/2) Vz (V) P (W) TYP. 0.15 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 RD2.0UM RD2.2UM RD2.4UM RD2.7UM
|
Original
|
X13769XJ2V0CD00
RD10UJ
RD10UM
RD11UJ
RD11UM
RD12UJ
RD12UM
RD13UJ
RD13UM
RD15UJ
rd6.8a
zener rd9.1esb2
rd5.6b
09-5 diode
RD30F
RD6,8MW
RD2.4E
RD5.1P
RD51P
|
PDF
|
TSP70
Abstract: No abstract text available
Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series
|
Original
|
TSP2305A
TSP40GD120P
TSP25G135T
O-247
TSP25GD135T
TSP25G135P
TSP25GD135P
TSP70
|
PDF
|
biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power
|
Original
|
658nm
ML1016R
685nm
ML1012R
785nm
ML64114R
Revised11JUN99
biconvex lens with focal length 1 m and diameter 25.4 mm
laser diode DVD 100mw
DL-3147-011
laser diode toshiba 780nm
650nm laser diode 200mw
TOLD9225M
mitsubishi laser diode
OPHIR pd200
collimated LED 670 nm
DL3147-011
|
PDF
|
R22A
Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
|
Original
|
110VAC
ZPS60-3
R22A
transistor MTBF
OPTOCUPLER HAND BOOK
TRANSISTOR mosfet
transistor R1d
R24 transistor
optocupler
transformer mtbf
R18A
R22E
|
PDF
|
transistor R1d
Abstract: transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS40-3 Ver: V1.1 Date: 21/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
|
Original
|
110VAC
ZPS40-3
transistor R1d
transistor R1A
diode FR 105
TRANSISTOR 106 d1
R22A
MTBF-ZPS40
04112
78540
R18A
217F
|
PDF
|
Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
|
Original
|
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
|
PDF
|
Laser Diode 10 pin
Abstract: HY6330 Photodetector back diode laser diodes driver
Text: HY6330 Laser Diode Driver Switchable Constant Current Laser Diode Driver Micro-heaters Description: Features: F F F F TEC Controllers Laser Diode Drivers F Adjustable current to 170mA @ 5Volts Enable/disable pin For common cathode or isolated laser diode current drive
|
Original
|
HY6330
170mA
HY6330
170mA.
Laser Diode 10 pin
Photodetector
back diode
laser diodes driver
|
PDF
|
Aspheric Lens TO Can
Abstract: 310-0065-780 305-0065-780 336 305 336-0808-830 lens laser diode HL6312G 785nm 780nm laser diode 300-0355-780
Text: Optima Laser Diode Optics Cost Effective Lenses for Collimating and Focusing Laser Diodes Collimating and focusing a laser diode is perhaps the most critical prerequisite in any laser diode application. While the characteristics of a laser diode might be ideal for your
|
Original
|
635nm
850nm.
01JAN01
Aspheric Lens TO Can
310-0065-780
305-0065-780
336 305
336-0808-830
lens laser diode
HL6312G
785nm
780nm laser diode
300-0355-780
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC10H065
O-220AC
O-220AC
STPSC10H065D
STPSC10H065DI
STPSC10H065B-TR
STPSC10H065G-TR
DocID023604
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC6H065
O-220AC
STPSC6H065D
STPSC6H065G-TR
DocID023247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC10H065
O-220AC
STPSC10H065D
STPSC10H065G-TR
DocID023604
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC6H065
O-220AC
O-220AC
STPSC6H065D
STPSC6H065DI
STPSC6H065B-TR
STPSC6H065G-TR
DocID023247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC4H065
O-220AC
O-220AC
STPSC4H065D
STPSC4H065DI
DocID023598
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: STPSC10H065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC10H065-Y
DocID026618
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LASER DIODE Laser diode L9278-14 TOSA type, 1310 nm FP Fabry-Perot laser diode Features Applications l 1310 nm FP (Fabry-Perot) laser diode l φ1.25 mm sleeve type TOSA (Transmitter Optical Sub-Assembly) l High-speed response: 2.5 Gbps l Optical output: 0.2 mW
|
Original
|
L9278-14
SE-171
KLED1041E02
|
PDF
|
MMAD1109
Abstract: MMAD130 MMAD1103 MMAD1105 MMAD1107
Text: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
|
Original
|
MMAD130/D
MMAD130/D
MMAD1109
MMAD130
MMAD1103
MMAD1105
MMAD1107
|
PDF
|
hc4-dc12v
Abstract: HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F
Text: HC Has built-in diode to absorb surge For use in semiconductor circuits HC RELAY WITH DIODE TYPE FOR DC FEATURES 1. The built-in diode absorbs surge voltage arising when the coil goes to the off state (for DC type). Diode characteristics; Reverse breakdown voltage: 1,000V,
|
Original
|
25Y-3N,
25Y-3S
25-3X,
1071-A
25-3S
25-3TA
25-M3
hc4-dc12v
HC4-DC24V
HC2-DC24V
HC2-SS-K
HC3-DC24V
HC3-DC6V-D-F
nichifu
HC4-DC24V-D
HC1-DC12V
HC2-L-DC24V-D-F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 600V 2x15A APT15DQ60BCT APT15DQ60BCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters
|
Original
|
2x15A
APT15DQ60BCT
APT15DQ60BCTG*
O-247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1000V 2x15A APT15DQ100BCT APT15DQ100BCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters
|
Original
|
2x15A
APT15DQ100BCT
APT15DQ100BCTG*
O-247
|
PDF
|
HIGH VOLTAGE SCR 10kv
Abstract: 8kv DIODE SP725AB
Text: TVS Diode Arrays SPA Devices General Purpose ESD Protection - SP725 Series SP725 Series 5pF 8kV Diode Array RoHS Pb GREEN The SP725 is an array of SCR/Diode bipolar structures for ESD and overvoltage protection of sensitive input circuits. The SP725 has 2 protection SCR/Diode device structures
|
Original
|
SP725
SP725AB
SP725AATG
MSOP-10L)
AN9304
AN9612
MSOP-10L
SP725
HIGH VOLTAGE SCR 10kv
8kv DIODE
|
PDF
|
ad130
Abstract: D1103 d1105 MMAD1109 AD1107
Text: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching
|
OCR Scan
|
MMAD130/D
AD1105
AD1107
ad130
D1103
d1105
MMAD1109
|
PDF
|
diode G21
Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
|
OCR Scan
|
FMMD914
BAV70
BAV74
BAV99
BAW56
100mA
diode G21
marking G21 Z5
LD4RA
BZX84-C27
BZX84C18
g21 Transistor
BZX84C3V0
BZX84
|
PDF
|
AD130
Abstract: D1107 AD1105
Text: M OTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode A rray s Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching
|
OCR Scan
|
MMAD130/D
0EH0b32
AD130
D1107
AD1105
|
PDF
|
