NTP52N10G
Abstract: AN569 NTP52N10
Text: NTP52N10 Power MOSFET 60 Amps, 100 Volts N−Channel Enhancement Mode TO−220 http://onsemi.com Features • Source−to−Drain Diode Recovery Time comparable to a Discrete • • • 60 AMPERES 100 VOLTS 30 mW @ VGS = 10 V Fast Recovery Diode Avalanche Energy Specified
|
Original
|
PDF
|
NTP52N10
O-220
tpv10
NTP52N10/D
NTP52N10G
AN569
NTP52N10
|
Untitled
Abstract: No abstract text available
Text: NTP52N10 Power MOSFET 60 Amps, 100 Volts N−Channel Enhancement Mode TO−220 http://onsemi.com Features • Source−to−Drain Diode Recovery Time comparable to a Discrete • • • 60 AMPERES 100 VOLTS 30 mW @ VGS = 10 V Fast Recovery Diode Avalanche Energy Specified
|
Original
|
PDF
|
NTP52N10
NTP52N10/D
|
LED660N-66-60
Abstract: No abstract text available
Text: LED660N-66-60 TECHNICAL DATA High Power LED Array, 60 chips AlGaInP LED660N-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency AlGaInP diode chips, mounted on a metal stem TO-66 with AIN ceramics
|
Original
|
PDF
|
LED660N-66-60
LED660N-66-60
|
DHG60C600HB
Abstract: diode marking 343 DSEC59
Text: DHG 60 C 600 HB preliminary V RRM = 600 V I FAV = 2x 30 A t rr = 40 ns Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DHG 60 C 600 HB Backside: cathode Features / Advantages: Applications:
|
Original
|
PDF
|
60747and
20110823a
DHG60C600HB
diode marking 343
DSEC59
|
Untitled
Abstract: No abstract text available
Text: HUR2x30-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 600 HUR2x30-60 Symbol VRRM V 600 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255
|
Original
|
PDF
|
HUR2x30-60
OT-227
|
Untitled
Abstract: No abstract text available
Text: HUR2x30-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 600 HUR2x30-60 Symbol VRRM V 600 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255
|
Original
|
PDF
|
HUR2x30-60
OT-227
|
Untitled
Abstract: No abstract text available
Text: HUR2x60-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 600 HUR2x60-60 Symbol VRRM V 600 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255
|
Original
|
PDF
|
HUR2x60-60
OT-227
|
Untitled
Abstract: No abstract text available
Text: HUR2x60-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 600 HUR2x60-60 Symbol VRRM V 600 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255
|
Original
|
PDF
|
HUR2x60-60
OT-227
|
sonic cleaner
Abstract: No abstract text available
Text: DH 60 Advanced Technical Information IFAVM = 64 A VRRM = 1400-1800 V trr = 150 ns Fast Recovery Diode SONIC series VRSM VRRM V V 1400 1600 1800 1400 1600 1800 Type C A TO-247 AD C DH 60-14A DH 60-16A DH 60-18A A A = Anode, C = Cathode Conditions Maximum Ratings
|
Original
|
PDF
|
O-247
0-14A
0-16A
0-18A
sonic cleaner
|
Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED Infrared illuminator L810N-66-60 Lead Pb Free Product – RoHS Compliant L810N-66-60 Epoxy Lens type Infrared Illuminator L810N-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency AlGaAs diode chips, mounted on a metal stem TO-66
|
Original
|
PDF
|
L810N-66-60
L810N-66-60
400um
400um
60pcs
600mA
|
Untitled
Abstract: No abstract text available
Text: VUB 60 VRRM = 1200-1600 V IdAVM = 70 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 1 2 Type 4 5 V 1200 1600 VUB 60-12 NO1 VUB 60-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads
|
Original
|
PDF
|
|
60-04A
Abstract: No abstract text available
Text: DSEP 60-04A HiPerFREDTM Epitaxial Diode IFAV = 60 A VRRM = 400 V trr = 30 ns with soft recovery VRSM VRRM V V 400 400 Type A C TO-247 AD C DSEP 60-04A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 120°C; rectangular, d = 0.5
|
Original
|
PDF
|
0-04A
O-247
60-04A
|
9V bridge rectifier ic
Abstract: 60-16NO1 ixys vub 70 -16
Text: VUB 60 VRRM = 1200-1600 V IdAVM = 70 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 1 2 Type 4 5 V 1200 1600 VUB 60-12 NO1 VUB 60-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: DSEK 60 Common Cathode Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 200 200 200 200 IFAVM = 2x 34 A VRRM = 200 V trr = 35 ns ISOPLUS 247TM TO-247 AD Type Version A A DSEK 60-02A DSEK 60-02AR C A Version AR A C A A C A C (TAB) TAB A = Anode, C = Cathode
|
Original
|
PDF
|
247TM
O-247
0-02A
60-02AR
|
|
|
ixys 60-02
Abstract: G 839 DIODE 60-02A
Text: Common Cathode Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 200 200 200 200 DSEK 60 IFAVM = 2x 34 A VRRM = 200 V = 35 ns trr TO-247 AD Type ISOPLUS 247TM Version A A DSEK 60-02A DSEK 60-02AR C A A C A Version AR C (TAB) A C A TAB A = Anode, C = Cathode
|
Original
|
PDF
|
O-247
247TM
0-02A
60-02AR
ixys 60-02
G 839 DIODE
60-02A
|
6002A
Abstract: 60-02A
Text: DSEK 60 Common Cathode Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 200 200 200 200 IFAVM = 2x 34 A VRRM = 200 V trr = 35 ns ISOPLUS 247TM TO-247 AD Type Version A A DSEK 60-02A DSEK 60-02AR C A Version AR A C A A C A C (TAB) A = Anode, C = Cathode Symbol
|
Original
|
PDF
|
247TM
O-247
0-02A
60-02AR
6002A
60-02A
|
MV1863D
Abstract: "Tuning Varactor"
Text: MV1863D SILICON ABRUPT TUNING VARACTOR DIODE DESCRIPTION: PACKAGE STYLE 31 The ASI MV1863D is a Passivated Epitaxial Silicon Abrupt Tuning Varactor Diode. MAXIMUM RATINGS I 100 mA V 60 V PDISS 500 mW @ TC = 25 C TJ -65 C to +175 C TSTG -65 C to +200 C θJC
|
Original
|
PDF
|
MV1863D
MV1863D
"Tuning Varactor"
|
DL-3149-057
Abstract: DL 3149-057 no6881
Text: Ordering number : ENN6881A Red Laser Diode DL-3149-057 DL-3149-057 Red Laser Diode Features Package Dimensions : 670 nm Typ. : Ith = 25 mA (Typ.) : 5 mW at 60°C : ø 5.6 mm ø4.4 ø3.55±0.1 ø1.6 Effective window diameter 1.0min. 1 3 Applications Absolute Maximum Ratings at Tc=25°C
|
Original
|
PDF
|
ENN6881A
DL-3149-057
DL-3149-057
DL 3149-057
no6881
|
1N 2002 diode
Abstract: 1N4148M
Text: 1N4148M SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 50 V Peak Reverse Voltage VRM 60 V IO 130 IFSM 500 Rectified Current (Average) Half Wave Rectification with Resist. Load o
|
Original
|
PDF
|
1N4148M
4148M
1N 2002 diode
1N4148M
|
Microwave PIN diode
Abstract: a 3140 5082-3140 3140 5082-3141
Text: Microwave PIN Diode Silicon Stripline PIN Diodes Part Number Isolation Min., dB Insertion Loss Max., (dB) SWR Max. Lifetime τ Typ., (ns) Package Page No. 5082-3140 5082-3141 20 20 0.5 1.0 1.5 1.5 400 35 60[1] 60 2-97 2-97 Notes: 1. Denotes anode heat sink; all other parts are cathode heat sink
|
Original
|
PDF
|
|
BZX88
Abstract: BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67 BAW68 BZX88-C2V7
Text: MICRO-E SILICON PLANAR HIGH-SPEED SW ITCHING DIODES Ratings and Characteristics at 2 5 °C ambient temperature Type BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67 BAW68 Description Max. Vrw m Volts 60 Single diode 30 Single diode Single diode 15 60 Common cathode diode pair
|
OCR Scan
|
PDF
|
BAW63
BAW63A
BAW63B
BAW64
BAW65
BAW66
BAW67
BAW68
BZX88-C10
BZX88-C11
BZX88
BZX88-C2V7
|
scr tic 1160
Abstract: No abstract text available
Text: CD42_ _60 CD47 60 Pi iwerex, Inc., 2 00 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/Diode POW-R-BLOK Module 60 Amperes/1600 Volts Description: TO CD42_ _60, CD47_ _60 SCR/Diode POW-R-BLOK™ Module 60 Amperes/1600 Volts Cutline Drawing
|
OCR Scan
|
PDF
|
Amperes/1600
scr tic 1160
|
Untitled
Abstract: No abstract text available
Text: CD42_ _60 CD47_ _60 _ Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/Diode POW-R-BLOK Module 60 Amperes/1600 Volts Description: CD42_ _60, CD47_ _60 SCR/Diode POW-R-BLOK™ Module 60 Amperes/1600 Volts Outline Drawing
|
OCR Scan
|
PDF
|
Amperes/1600
MAX/10
|
MB11A02
Abstract: thyristor cs3 MB11A06 cs3 thyristor thyristor tt 142 n
Text: POüJEREX INC "TÏ TETMbEl D0D1Ö35 S D T-S lZ - H C-Series Fast Single Diode Modules Vrrm IFSM trr typical VlSOL (Amps) (°C) (Volts) (Amps) (fisec) (Vrms) Package 20 20 20 50 50 50 100 100 100 200 300 121 121 121 105 105 105 60 60 60 60 60 600 1000 1200
|
OCR Scan
|
PDF
|
CS24/CS34
CS340602
CS341002
CS341202
CS240650
CS241050
CS241250
CS240610
CS241010
CS241210
MB11A02
thyristor cs3
MB11A06
cs3 thyristor
thyristor tt 142 n
|
