1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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diode 62z
Abstract: Hitachi DSA002786 diode+62z 62z zener
Text: HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-581 Z Rev 0 Features • Low capacitance (C = 8.5pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information
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ADE-208-581
diode 62z
Hitachi DSA002786
diode+62z
62z zener
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diode 62z
Abstract: HZU6.2Z ADE-208-581
Text: HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-581 Z Rev 0 Features • Low capacitance (C = 8.5pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information
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ADE-208-581
diode 62z
HZU6.2Z
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Untitled
Abstract: No abstract text available
Text: NDF04N62Z, NDD04N62Z N-Channel Power MOSFET 620 V, 2.0 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
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NDF04N62Z,
NDD04N62Z
NDF04N62Z/D
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BFR 965
Abstract: No abstract text available
Text: NDF04N62Z, NDD04N62Z N-Channel Power MOSFET 620 V, 2.0 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
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NDF04N62Z,
NDD04N62Z
JESD22-A114)
NDF04N62Z/D
BFR 965
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diode 62z
Abstract: ADE-208-581 62z zener
Text: HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-581 Z Rev 0 Oct. 1997 Features • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information
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ADE-208-581
diode 62z
62z zener
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ADE-208-581
Abstract: diode 62z DSA003642
Text: HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-581A Z Rev.1 Nov. 2001 Features • Low capacitance (C = 8.5 pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information
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ADE-208-581A
D-85622
D-85619
ADE-208-581
diode 62z
DSA003642
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PTSP0002ZA-A
Abstract: hzu6.2z
Text: HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1218-0200 Previous: ADE-208-581A Rev.2.00 Jun 16, 2005 Features • Low capacitance (C = 8.5 pF max) and can protect signal line from ESD. • Ultra small Resin Package (URP) is suitable for surface mount design.
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REJ03G1218-0200
ADE-208-581A)
PTSP0002ZA-A
Unit2607
PTSP0002ZA-A
hzu6.2z
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diode 62z
Abstract: No abstract text available
Text: HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-593 Z Rev 0 Features • HZM6.2ZFA has four devices, and can absorb external + and -surge. • Low capacitance (C = 8.5pF max) and can protect ESD of signal line. • MPAK-5 package is suitable for high density surface mounting and high speed assembly.
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ADE-208-593
diode 62z
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diode 62z
Abstract: No abstract text available
Text: HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-499 Z Rev 0 Features • HZM6.2ZWA has two devices, and can absorb external + and -surge. • Low capacitance (C = 8.5pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.
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ADE-208-499
150pF,
diode 62z
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diode 62z
Abstract: Hitachi DSA002788
Text: HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-499 Z Rev 0 Features • HZM6.2ZWA has two devices, and can absorb external + and -surge. • Low capacitance (C = 8.5pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.
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ADE-208-499
SC-59A
diode 62z
Hitachi DSA002788
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Untitled
Abstract: No abstract text available
Text: HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-593 Z Rev 0 Features • • • HZM6.2ZFA has four devices, and can absorb external + and -surge. Low capacitance (C=8.5pF max) and can protect ESD of signal line. MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
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ADE-208-593
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w410
Abstract: 62z zener
Text: HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-499 Z Rev 0 Features • • • HZM6.2ZWA has two devices, and can absorb external + and -surge. Low capacitance (C=8.5pF max) and can protect ESD of signal line. MPAK Package is suitable for high density surface mounting and high speed assembly.
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ADE-208-499
w410
62z zener
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diode 62z
Abstract: Hitachi DSA00217
Text: HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-593 Z Rev 0 Nov. 1997 Features • HZM6.2ZFA has four devices, and can absorb external + and -surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
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ADE-208-593
diode 62z
Hitachi DSA00217
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diode 62z
Abstract: ADE-208-58KZ
Text: HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-58KZ Rev 0 Features • Low capacitance C=8.5pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information
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ADE-208-58KZ)
diode 62z
ADE-208-58KZ
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diode 62z
Abstract: ADE-208-581
Text: HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-581 Z Rev 0 Features • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information
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ADE-208-581
diode 62z
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Untitled
Abstract: No abstract text available
Text: HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-581 Z Rev 0 Features • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information
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ADE-208-581
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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diode 62z
Abstract: surge absorb HZM6.2ZWA
Text: HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-499 Z Rev 0 Features • HZM6.2ZWA has two devices, and can absorb external + and -Surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.
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ADE-208-499
150pF,
diode 62z
surge absorb
HZM6.2ZWA
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Untitled
Abstract: No abstract text available
Text: HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-499 Z Rev 0 Features • HZM6.2ZWA has two devices, and can absorb external + and -surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.
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ADE-208-499
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Untitled
Abstract: No abstract text available
Text: HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-593 Z Rev 0 Features • HZM6.2ZFA has four devices, and can absorb external + and -surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
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ADE-208-593
150pF,
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Untitled
Abstract: No abstract text available
Text: HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-593 Z Rev 0 Features • HZM6.2ZFA has four devices, and can absorb external + and -Surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
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ADE-208-593
150pF,
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