Untitled
Abstract: No abstract text available
Text: US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 2 US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Laser Diodes Laser Diode Module Micro Laser Module
|
Original
|
635nm-5mW
N635-5
NM635-5
EPM635-5
MM635-5
MM635nm
com/mmd635nm5m
|
PDF
|
NM635-5
Abstract: Laser module 635nm-5mW RED laser diode operating Temperature laser diode 12 pin red diode laser EPM635-5 MM635-5 N635-5 US-Lasers
Text: US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 2 US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Laser Diodes Laser Diode Module Micro Laser Module
|
Original
|
635nm-5mW
N635-5
NM635-5
EPM635-5
MM635-5
MM635nm
com/mmd635nm5m
NM635-5
Laser module
RED laser diode operating Temperature
laser diode 12 pin
red diode laser
EPM635-5
MM635-5
N635-5
US-Lasers
|
PDF
|
Untitled
Abstract: No abstract text available
Text: U-LD-630543A UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode U-LD-630543A •Specifications 1 Device: (2) Structure: Laser Diode TO-18(ψ5.6mm),with no glass cap ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter
|
Original
|
U-LD-630543A
635nm
|
PDF
|
635nm laser diode
Abstract: U-LD-630541A laser diode 635nm PIN laser DIODE
Text: U-LD-630541A UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode U-LD-630541A •Specifications 1 Device: (2) Structure: Laser Diode TO-18(ψ5.6mm),with Pb free cap ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter
|
Original
|
U-LD-630541A
635nm
635nm laser diode
U-LD-630541A
laser diode 635nm
PIN laser DIODE
|
PDF
|
635nm
Abstract: No abstract text available
Text: U-LD-630542A UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode U-LD-630542A •Specifications 1 Device: (2) Structure: Laser Diode TO-18(ψ5.6mm),with Pb cap ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbol
|
Original
|
U-LD-630542A
635nm
|
PDF
|
optron
Abstract: Union
Text: U-LD-630551A-preliminary UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode U-LD-630551A-preliminary •Specifications 1 Device: (2) Structure: Laser Diode TO-18(ψ5.6mm),with Pb free cap ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)
|
Original
|
U-LD-630551A-preliminary
635nm
optron
Union
|
PDF
|
laser diode bare chip
Abstract: No abstract text available
Text: U-CP-6305123 UNION OPTRONICS CORP. 635nm Laser Diode Chips 635nm Red Laser Diode Chips U-CP-6305123 •Specifications 1 Size : (2) Device: (3) Structure: 250*300*100 m Laser diode bare chip Multi-step growth ■External dimensions(Unit : μm) P-electrode and N-electrode are both gold pads.
|
Original
|
U-CP-6305123
635nm
laser diode bare chip
|
PDF
|
635nm
Abstract: red laser diode 635nm RED laser diode operating Temperature red diode laser 635nm laser modules D635 DIODE 630 laser diode 635nm lens laser diode
Text: US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 1 US-Lasers: 635nm-5mW - Red Laser Diode Back to Laser Diodes VISIBLE LASER DIODE DATA SHEET ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure
|
Original
|
635nm-5mW
635nm
com/d635nm5m
635nm
red laser diode 635nm
RED laser diode operating Temperature
red diode laser
635nm laser modules
D635
DIODE 630
laser diode 635nm
lens laser diode
|
PDF
|
BAP51-02
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
|
Original
|
M3D319
BAP51-02
OD523
MAM405
OD523)
125004/00/02/pp6
BAP51-02
BP317
|
PDF
|
109 DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
|
Original
|
M3D319
BAP50-02
OD523
MAM405
OD523)
613512/01/pp8
109 DIODE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APC Laser Diode TM ADL-63054TA2 2007/06/21 ver 1.0 APC Laser Diode p p TM Perfect Solution For Auto Power Controlled Laser Diode By converting the external APC circuit board into an ASIC, we package the APC circuit into a traditional TO-can together with the laser chip. From now on, single package APC function
|
Original
|
ADL-63054TA2
ADL-63054TA2
635nm
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC10H065
O-220AC
O-220AC
STPSC10H065D
STPSC10H065DI
STPSC10H065B-TR
STPSC10H065G-TR
DocID023604
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC6H065
O-220AC
STPSC6H065D
STPSC6H065G-TR
DocID023247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC10H065
O-220AC
STPSC10H065D
STPSC10H065G-TR
DocID023604
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC4H065
O-220AC
O-220AC
STPSC4H065D
STPSC4H065DI
DocID023598
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
|
Original
|
STPSC8H065
O-220AC
O-220AC
STPSC8H065D
STPSC8H065DI
STPSC8H065B-TR
STPSC8H065G-TR
DocID023603
|
PDF
|
hc4-dc12v
Abstract: HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F
Text: HC Has built-in diode to absorb surge For use in semiconductor circuits HC RELAY WITH DIODE TYPE FOR DC FEATURES 1. The built-in diode absorbs surge voltage arising when the coil goes to the off state (for DC type). Diode characteristics; Reverse breakdown voltage: 1,000V,
|
Original
|
25Y-3N,
25Y-3S
25-3X,
1071-A
25-3S
25-3TA
25-M3
hc4-dc12v
HC4-DC24V
HC2-DC24V
HC2-SS-K
HC3-DC24V
HC3-DC6V-D-F
nichifu
HC4-DC24V-D
HC1-DC12V
HC2-L-DC24V-D-F
|
PDF
|
DIODE A6 sod110
Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
Text: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation
|
Original
|
OD110
OD110
innovat27
SCB63
DIODE A6 sod110
sod110 package
SOD-110
BA792
philips zener diode
SOD110
BAS216
BAS221
BAT254
Zener Diode MARK 101 SOD323
|
PDF
|
ULTRAFAST RECTIFIER 16A 600V vf 1.7
Abstract: APT6038BLL APT8DQ60K3CT APT8DQ60K3CTG
Text: 600V 8A APT8DQ60K3CT APT8DQ60K3CTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
|
Original
|
APT8DQ60K3CT
APT8DQ60K3CTG*
O-220
O-220
ULTRAFAST RECTIFIER 16A 600V vf 1.7
APT6038BLL
APT8DQ60K3CT
APT8DQ60K3CTG
|
PDF
|
ULTRAFAST RECTIFIER 16A 600V vf 1.7
Abstract: transistor 4242 4242 transistor D 4242 diode 400V 4A APT6038BLL APT8DQ60K3 APT8DQ60K3G diode 8a 600v diode T B 8A
Text: 600V 8A APT8DQ60K3 APT8DQ60K3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE K3 PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
|
Original
|
APT8DQ60K3
APT8DQ60K3G*
O-220
O-220
ULTRAFAST RECTIFIER 16A 600V vf 1.7
transistor 4242
4242 transistor
D 4242
diode 400V 4A
APT6038BLL
APT8DQ60K3
APT8DQ60K3G
diode 8a 600v
diode T B 8A
|
PDF
|
25-12io8
Abstract: MDC 1200 DIODE mdc 40-14 MCO 1510 MCd 25-04 ABB thyristor modules ASEA thyristor mdc 55-04 hs 50 abb E72873
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-Module d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z5-Z3 Phase control Thyristor-Diode-Modules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
|
OCR Scan
|
K21-0120
K21-01S0
K21-0180
K21-0265
K41-0150C
25-12io8
MDC 1200
DIODE mdc 40-14
MCO 1510
MCd 25-04
ABB thyristor modules
ASEA thyristor
mdc 55-04
hs 50 abb
E72873
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
|
OCR Scan
|
|
PDF
|
triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD
|
OCR Scan
|
1S2835
1S2836
1S2837
1S2838
1SS123
1SS220
1SS221
1SS222
1SS223
2SA811A
triac tic 236
SCR U 537
MP25 transistor
transistor su 312
GA1L32
3 pin mini mold transistor
2SJ19
FA114M
2SA1611
Z 103 TRIAC
|
PDF
|
SMD diode sg 46
Abstract: SMD diode sg 03
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS
|
OCR Scan
|
BAP50-03
SCA61
SMD diode sg 46
SMD diode sg 03
|
PDF
|
