BD3 diode
Abstract: 6n06e k4366
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
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IFS100B12N3T4
CEE32
1322D14
CEE326
732CF5CD
2313ECEC
1231423567896AB2CDEF1B6
54E36F
4112F
BD3 diode
6n06e
k4366
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PDF
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IR 006
Abstract: IRF7521D1
Text: P D -9.1646 International lö R Rectifier • • • • • PRELIMINARY FETKY IRF7521D1 MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low Vp Schottky Rectifier Generation V T echnology Micro8 Footprint
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OCR Scan
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IRF7521D1
IR 006
IRF7521D1
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PDF
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ML01720A
Abstract: mitsubishi tosa Ml-01 laser diode driver ic
Text: ADVANCED PRODUCTS INFORMATION TZ3-08-014-02 MITSUBISHI ICs for Optical Communication ML01720A 10Gb/s Laser Diode Driver IC GENERAL DESCRIPTION The ML01720A is laser diode drivers for 10Gb/s optical communication systems. It is in a 4mm x 4mm 24pin Small-size
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TZ3-08-014-02
ML01720A
10Gb/s
ML01720A
24pin
10mApp
80mApp
100mA
24-pin
mitsubishi tosa
Ml-01
laser diode driver ic
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PDF
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Diode SMD SJ 66A
Abstract: No abstract text available
Text: P D -9.1646 International IGR Rectifier IR F 7 5 2 1 D 1 PRELIMINARY FETKY MOSFET and Schottky Diode • • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint
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OCR Scan
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5545S
Diode SMD SJ 66A
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PDF
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IRF7521D1
Abstract: 9164
Text: PD-91646C IRF7521D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint A A S G 1 8 K 2 7 K 3 6 4 5 VDSS = 20V
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PD-91646C
IRF7521D1
IRF7521D1
9164
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PDF
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IRF7521D1
Abstract: ba 7321
Text: PD- 91646B IRF7521D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A
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91646B
IRF7521D1
forward-481
IRF7521D1
ba 7321
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PDF
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TDB6HK180N16RR
Abstract: 6a65
Text: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK180N16RR_B11 Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !325CEF36"#E$% 6D13BC1322C14BBB& ' 6*6+,231336134$62332C364&3
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TDB6HK180N16RR
CEF36"
3BC1322C14BB
32C36
36423B
4256E
D6345
6423B
36423B
6a65
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PDF
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EIA-541
Abstract: IRF7501
Text: PD- 95241 IRF7521D1PbF l l l l l l FETKYä MOSFET / Schottky Diode HEXFET Co-packaged Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint Lead-Free 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = 20V
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IRF7521D1PbF
EIA-481
EIA-541.
EIA-541
IRF7501
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PDF
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PAH308
Abstract: PAT308
Text: THYRISTOR MODULE 66A / 800V PAT308 PAH308 FEATURES OUTLINE DRAWING * Isolated Base * Dual Thyristors or Thyristor and Diode Anti-Parallel Circuit * High Surge Capability * UL Recognized, File No. E187184 PAT TYPICAL APPLICATIONS * AC phase control * AC switch
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PAT308
PAH308
E187184
200mA
PAT/PAH308
PAH308
PAT308
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PDF
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE MODULE PE60Q04N 66A/40V FEATURES • Three - Arms, Cathode Common to Base Plate ° Low Forward Voltage Drop • Low Power Loss, High Efficiency 0 High Surge Capability MAXIMUM RATINGS \ type Voltage Rating PE60Q04N - Unit Symboles.
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PE60Q04N
6A/40V
bbl5123
0GG2127
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PDF
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AT30
Abstract: PAH3012 PAH3016
Text: THYRISTOR MODULE 66A / 1200 to 1600V P AT30 12 P AT30 16 PAH3012 PAH3016 FEATURES * Isolated Base * Dual Thyristors or Thyristor and Diode Anti-Parallel Circuit * High Surge Capability * UL Recognized, File No. E187184 OUTLINE DRAWING φ TYPICAL APPLICATIONS
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PAH3012
PAH3016
E187184
PAT/PAH3016
PAT/PAH3012
200mA
PAT/PAH301x
AT30
PAH3012
PAH3016
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PDF
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 60KQ10B 66A/10V 5.31.209 4.71.185) FEATURES 5.71.224) 5.31.208) o Similar to TO-247AC TO-3P) Case °Extremely Low Forward Voltage Drop ° Low Power Loss, High Efficiency 2.2I.087I-J 3.21.126). 0.81.031) MAX ^ • High Surge Capability
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OCR Scan
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60KQ10B
6A/10V
O-247AC
087I-J
151E3
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PDF
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61MQ60
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 61MQ50 61MQ60 66A/50~60V FEATURES ° Hermetically Sealed Case ° High Reliability Device ° Low Forward Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 60 Volts Types Available MAXIMUM RATINGS \ type Voltage Rating
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6A/50
61MQ50
61MQ60
61MQ50
61MQ60
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PDF
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61MQ40
Abstract: J245
Text: SCHOTTKY BARRIER DIODE 61MQ40 66A/40V FEATURES ° Hermetically Sealed Case 0 High Reliability Device ° Low Forward Power Loss, High Efficiency » High Surge Capability • 30 Volts through 60 Volts Types Available MAXIMUM RATINGS \TYPE Voltage Rating 61MQ40
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OCR Scan
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6A/40V
61MQ40
61MQ40
J245
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PDF
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Untitled
Abstract: No abstract text available
Text: I , ,• In te rn a tio n a l X O R I Rectifier P D - 9.1646/ p r e lim in a r y IR F 7 5 2 1 D 1 FE TKY M OSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • N-Channel HEXFET • Low V p Schottky Rectifier • Generation VTechnology
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PDF
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61MQ60
Abstract: 61MQ50
Text: SCHOTTKY BARRIER DIODE 61MQ50 61MQ60 66A/50—60V FEATURES “ Hermetically Sealed Case ° High Reliability Device °'Low Forward Power Loss, High Efficiency « High Surge Capability ° 30 Volts through 60 Volts Types Available Dimensions in mm Inches Approx. Net Weight :18 Grams
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OCR Scan
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6A/50â
61MQ50
61MQ60
61MQ60
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PDF
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Q002
Abstract: PE60Q04N
Text: SCHOTTKY BARRIER DIODE MODULE PE60Q04N 66A/40V FEATURES « Three - Arms, Cathode Common to Base Plate » Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability MAXIMUM R A T IN G S \ type Voltage Rating PE60Q04N - Unit Symboles.
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OCR Scan
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6A/40V
PE60Q04N
PE60Q04N
Q002
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PDF
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PC60Q04N
Abstract: ARM40
Text: SCHOTTKY BARRIER DIODE MODULE PC60Q04N 66A/4ov FEATURES ° Dual - Cathode Common to Base Plate » Low Forward Voltage Drop » Low Power Loss, High Efficiency « High Surge Capability MAXIMUM R A T IN G S " \ type Voltage Rating PC60Q04N - Unit Symbol Repetitive Peak.
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OCR Scan
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PC60Q04N
T73TS55
PC60Q04N
bblS123
ARM40
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PDF
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61MQ30
Abstract: ed 76a
Text: SCHOTTKY BARRIER DIODE 61MQ30 66A/30V FEATURES ° Hermetically Sealed Case 0 High Reliability Device “ Low Forward Power Loss, High Efficiency • High Surge Capability ° 30 Volts through 60 Volts Types Available MAXIMUM R A T IN G S \ type Voltage Rating
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OCR Scan
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6A/30V
61MQ30
61MQ30
ed 76a
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PDF
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61MQ40
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 61MQ40 66A/40V FEATURES 17.31.68 16.7 661 » Hermetically Sealed Case ° High Reliability Device ° Low Forward Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 60 Volts Types Available f M6X1.0 / r 2.21087) ll-fl.45)
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OCR Scan
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61MQ40
6A/40V
61MQ40
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PDF
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60KQ40E
Abstract: 60KQ40B
Text: SCHOTTKY BARRIER DIODE 60KQ30E 60KQ40E 60KQ30B 60KQ40B 66A/30— 40V FEATURES oSimilar to TO-247AC TO-3P Case » Low Forward Voltage Drop " Low Power Loss, High Efficiency ° High Surge Current Capability ° 10 Volts thru 60 Volts Types Available 1. ^ 1.049)
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OCR Scan
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O-247AC
6A/30--
60KQ30E
60KQ40E
60KQ30B
60KQ40B
60KQ30B
0KQ40B
60KQ40B
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PDF
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PC60QL02N
Abstract: PC60QL03N 151E3
Text: SCHOTTKY BARRIER DIODE MODULE PC60QL02N PC60QL03N 66A/2 o ~ sov FEATURES Dual r-Cathode Common to Base Plate ®Extremely Low Forward Voltage Drop ® Low Power L o s s , High Efficiency ° High Surge Capability MAXIMUM RATINGS ^\TYPE ♦ PC60QL02N Voltage Rating
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PC60QL02N
PC60QL03N
bblS123
151E3
PC60QL03N
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PDF
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61MQ40
Abstract: diode 66a J245
Text: SCHOTTKY BARRIER DIODE 61MQ40 66A/40V FEATURES » Hermetically Sealed Case * High Reliability Device ° Low Forward Power Loss, High Efficiency « High Surge Capability c 30 Volts through 60 Volts Types Available * M 6 X 1.0 / Dimensions in mm INches Approx. Net Weight : 18 Grams
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OCR Scan
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6A/40V
61MQ40
61MQ40
0G1CI23
IKJRAT10N
bbl5123
diode 66a
J245
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PDF
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE MODULE PC60Q04N 66A/4ov FEATURES ° Dual - Cathode Common to Base Plate ° Low Forward Voltage Drop 0 Low Power Loss, High Efficiency « High Surge Capability MAXIMUM RATINGS \ type Voltage Rating P C 6 0 Q 0 4N - Unit Symbol^v. Repetitive Peak
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OCR Scan
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PC60Q04N
bbl5153
bblS123
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PDF
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