Untitled
Abstract: No abstract text available
Text: BAS3007A. Low VF Schottky Diode Array • Reverse voltage: 30 V • Forward current: 0.9 A • Small diode quad array for polarity independence, reverse polarity protection and low loss bridge rectification • Very low forward voltage: 0.5 V typ. @ 0.7 A per diode
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BAS3007A.
BAS3007A-RPP
OT143
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Untitled
Abstract: No abstract text available
Text: UC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004 DUAL SCHOTTKY DIODE BRIDGE FEATURES D Monolithic Eight-Diode Array D Exceptional Efficiency D Low Forward Voltage D Fast Recovery Time D High Peak Current D Small Size DESCRIPTION This eight-diode array is designed for
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UC1610
UC3610
SLUS339B
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nc65
Abstract: fp25r12w2t fp25r12w2t4_b11 P2NC6
Text: Technische Information / technical information FP25R12W2T4_B11 IGBT-Module IGBT-modules EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode
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FP25R12W2T4
nc65
fp25r12w2t
fp25r12w2t4_b11
P2NC6
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FP35R12W2T4
Abstract: MC65 FP35R12W2T4_B11 fP35R12W2T4-b11
Text: Technische Information / technical information FP35R12W2T4_B11 IGBT-Module IGBT-modules EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode
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FP35R12W2T4
MC65
FP35R12W2T4_B11
fP35R12W2T4-b11
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6J66
Abstract: FP25R12W2T4 mpf271 application ntc-thermistor
Text: Technische Information / technical information FP25R12W2T4_B11 IGBT-Module IGBT-modules EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode
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FP25R12W2T4
6J66
mpf271
application ntc-thermistor
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FS150R12KT4_B11
Abstract: FS150R12KT4
Text: Technische Information / technical information FS150R12KT4_B11 IGBT-Module IGBT-modules EconoPACK 3 Modul PressFIT mit Trench/Feldstopp IGBT4 und EmCon4 Diode EconoPACK™3 module PressFIT with trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter
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FS150R12KT4
FS150R12KT4_B11
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FF200R12MT4 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und EmCon4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter
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FF200R12MT4
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FF150R12ME3G
Abstract: No abstract text available
Text: Technische Information / technical information FF150R12ME3G IGBT-Module IGBT-modules EconoDUAL Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode EconoDUAL™ module with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FF150R12ME3G
FF150R12ME3G
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BD3 diode
Abstract: 6n06e k4366
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
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IFS100B12N3T4
CEE32
1322D14
CEE326
732CF5CD
2313ECEC
1231423567896AB2CDEF1B6
54E36F
4112F
BD3 diode
6n06e
k4366
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IFS100B12N3E4
Abstract: C5363 IFS100B12N3E4B
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current
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IFS100B12N3E4
428654F4
BCFC24
E32DC
BCFC26
E32DC6
6734F
9C46E4
BC33694
1231423567896AB
C5363
IFS100B12N3E4B
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FF450R12KE4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode 62mm C-series module with trench/fieldstop IGBT4 and optimized EmCon Diode IGBT-Wechselrichter / IGBT-inverter
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FF450R12KE4
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ifs75b12n3e4_b32
Abstract: No abstract text available
Text: Technische Information / technical information IFS75B12N3E4_B32 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense
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IFS75B12N3E4
ifs75b12n3e4_b32
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CZ5384B
Abstract: CZ5334B CZ5379B CZ5371B CZ5354B CZ5372B CZ5336B CZ5363B CZ5361B CZ5386B
Text: Central CZ5333B THRU CZ5388B TM Semiconductor Corp. 5.0W SILICON ZENER DIODE 3.3 VOLTS THRU 200 VOLTS 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CZ5333B Series Silicon Zener Diode is a high quality voltage regulator designed for use in industrial,
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CZ5333B
CZ5388B
DO-201
CZ5334B
CZ5335B
CZ5336B
CZ5337B
CZ5338B
CZ5384B
CZ5379B
CZ5371B
CZ5354B
CZ5372B
CZ5363B
CZ5361B
CZ5386B
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LTC4098-3.6
Abstract: A20-LCD15.6 SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current
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IFS75B12N3E4
428654F4
D3265
ECFC24
B32DC
CD3289
ECFC26
B32DC6
C36B3
1231423567896AB
LTC4098-3.6
A20-LCD15.6
SXA-01GW-P0.6
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FS200R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
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FS200R06KE3
CEE32
1322D14
CEE326
632CF5CD
1CE73
2313ECEC
3265CDDC14ECF
1231423567896AB2CDEF1B6
54E36F
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Untitled
Abstract: No abstract text available
Text: What is a Current Lim iting Diode? Outlined below are typical CLD Characteristics, Symbols, Parameters, and Definitions. A Current Limiting Diode, also known as a "Current Regu lating Diode” or a "Constant Current Diode," performs quite a unique function. Sim ilar to a zener diode, which
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90-second
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1n5gt
Abstract: diode aa 90 1A7GT 6J5G 6j5gt 1A5GT 6p5g 6f5G 6j5gx IN50
Text: TUB! 1A5GT 1A7GT 1C5GT 1D8GT ESSAYÉ SUR POSTE 8 -A A P entode H eptode P entode Diode Triode P entode 1H5GT Double D iode-Triode Pentode 1N5GT T étrode 1Q5GT H eptode “ 6A8GT“ Triode ~6F5GT“ 6H6G tT Double Diode Triode 6J5GT Am poule C hauffage F ilam en t
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6ju8
Abstract: 6ju8a general electric
Text: E L EC T R O N IC — PRODUCT INFORMATION — IN A C TIO N - Page 1 6JU8-A Quadruple Diode TUBES The 6JU8-A is a general-purpose quadruple diode of the 9-pin miniature type designed for use in phase-detector and noise-immune color-killer circuits of color television
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Untitled
Abstract: No abstract text available
Text: Order this data sheet by BAV199LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information BAV199LT1 Dual Series Switching Diode Motorola Preferred Device This switching diode has the following features: Low Leakage Current Applications Medium Speed Switching Times
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BAV199LT1/D
BAV199LT1
BAV199LT3
inch/10
BAV199LT1
OT-23
O-236AB)
2PHX33713F-0
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SD615
Abstract: sd6150 D1625
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Diode Common Anode M SD6150 MAXIM UM RATINGS EACH DIODE Rating Symbol Reverse Voltage Peak Forward Recurrent Current Peak Forward Surge Current (Pulse Width = 10 usee) Total Device Dissipation @ Derate above 25°C
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SD6150
SD615
sd6150
D1625
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SMD310
Abstract: Motorola 417 MMSD914T1 MMSD914T3 SOD123 footprint FAST SWITCHING DIODE SOD123 5D 9718-4 AAZ marking DIODE aaz
Text: MOTOROLA Order this document by MMSD914T1/D SEMICONDUCTOR TECHNICAL DATA MMSD914T1 Motorola Preferred Device Switching Diode This switching diode has the following features: • SOD-123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time
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MMSD914T1/D
OD-123
MMSD914T1
MMSD914T3
inch/10
MMSD914T1
OD-123
2PHX34003F-0
SMD310
Motorola 417
SOD123 footprint
FAST SWITCHING DIODE SOD123 5D
9718-4
AAZ marking
DIODE aaz
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV170LT1 This switching diode has the following features: M otorola Preferred D evice • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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BAV170LT1
BAV170LT3
inch/10
BAV170LT1
O-236AB)
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMSD914T1/D SEMICONDUCTOR TECHNICAL DATA Sw itching Diode MMSD914T1 The switching diode has the following features: • SOD-123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time Motorola Preferred Device
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MMSD914T1/D
MMSD914T1
OD-123
OD-123
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAW56LT1/D SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Switching Diode Common Anode BAW56LT1 Motorola Preferred Device CATHODE ►I ANODE 3 O1 — O2 CATHODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage
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BAW56LT1/D
BAW56LT1
-236A
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