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    DIODE 8109 Search Results

    DIODE 8109 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 8109 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5210 TSFF5210 2002/95/Eany 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5210 TSFF5210 2002/95/Es 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5410 TSFF5410 2002/95/Es 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5210 TSFF5210 2002/95/EC 2002/9ake D-74025 08-Mar-05

    Untitled

    Abstract: No abstract text available
    Text: TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5410 TSFF5410 2002/9s 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5210 TSFF5210 2002/95/EC 2002/9s 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5410 TSFF5410 D-74025 04-May-04

    Untitled

    Abstract: No abstract text available
    Text: TSFF5210 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5210 TSFF5210 D-74025 03-Jun-04

    Untitled

    Abstract: No abstract text available
    Text: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5410 TSFF5410 D-74025 03-Jun-04

    Untitled

    Abstract: No abstract text available
    Text: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5410 TSFF5410 08-Apr-05

    TSFF5410

    Abstract: No abstract text available
    Text: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5410 TSFF5410 D-74025 23-Jun-04

    Untitled

    Abstract: No abstract text available
    Text: TSFF5210 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5210 TSFF5210 D-74025 13-Apr-04

    TSFF5210

    Abstract: No abstract text available
    Text: TSFF5210 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5210 TSFF5210 D-74025 23-Jun-04

    Untitled

    Abstract: No abstract text available
    Text: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


    Original     		PDF TSFF5410 TSFF5410 D-74025 13-Apr-04

    tp 2116

    Abstract: 21163 2044B 2SD1806
    Text: Ordering number:EN2116B NPN Epitaxial Planar Silicon Transistor 2SD1806 High-Current Switching Applications unit:mm 2045B Features [2SD1806] 6.5 5.0 • Low saturation voltage. · On-chip diode between collector and emitter. · Small and slim package permitting 2SD1806-applied


    Original     		PDF EN2116B 2SD1806 2045B 2SD1806] 2SD1806-applied 2044B tp 2116 21163 2044B 2SD1806

    TSFF5410

    Abstract: No abstract text available
    Text: TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Leads with stand-off • Peak wavelength: λp = 870 nm


    Original     		PDF TSFF5410 TSFF5410 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: TSFF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm


    Original     		PDF TSFF5410 2002/95/EC 2002/96/EC TSFF5410 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1 3/4 Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm


    Original     		PDF TSFF5210 2002/95/EC 2002/96/EC TSFF5210 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: TSFF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm


    Original     		PDF TSFF5410 2002/95/EC 2002/96/EC TSFF5410 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: TSFF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm


    Original     		PDF TSFF5410 2002/95/EC 2002/96/EC TSFF5410 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1 3/4 Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm


    Original     		PDF TSFF5210 TSFF5210 2002trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1 3/4 Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm


    Original     		PDF TSFF5210 2002/95/EC 2002/96/EC TSFF5210 11-Mar-11

    TSFF5410

    Abstract: No abstract text available
    Text: TSFF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm


    Original     		PDF TSFF5410 TSFF5410 2002/95/Etrademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    TSFF5210

    Abstract: No abstract text available
    Text: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1 3/4 • Dimensions in mm : ∅ 5 • Leads with stand-off • Peak wavelength: λp = 870 nm


    Original     		PDF TSFF5210 TSFF5210 18-Jul-08