facon diode
Abstract: 40931 thyristor N 600 ch 14 CA 40931 ci 741 facon 741J 741 AMP 37741 1001dl
Text: FACON 4SE D • 345b2G3 □□□□□IE 4 HIFCN FACON SEMICONDUCTEURS/SEMICONDUCTORS T-Z3-OI « pack 931» diode/thyristor 12 Amp modules diode/thyristor « pack 931 »12 Amp V DRM or T y p es •f s m / •t s m 10 ms U se C ase ro cn n V RRM I r p e r leg
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345b2D3
T-23-0\
cb-200
741j37
cb-236
facon diode
40931
thyristor N 600 ch 14
CA 40931
ci 741
facon
741J
741 AMP
37741
1001dl
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Fairchild 9317
Abstract: 7 segment decoder 9317 9317 decoder 7 segment decoder TTL 9317 9317B ttl 9317 9317C 9317CDM TTL family
Text: TTL/MSI 9317B • 9317C 7-SEGMENT DECODER/DRIVERS FO R A D D IT IO N A L IN F O R M A T IO N SEE T H E F A IR C H IL D T T L D A T A BOOK. D E S C R IP T IO N — The 9 3 1 7 is a T T L /M S I Seven Segment D ecoder/Driver designed to accept four inputs in 8421 BCD code and provide the appropriate outputs to drive a seven segment numerical
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9317B
9317C
9317B
16-LEAD
93T7BDM
9317C
9317CDM
Fairchild 9317
7 segment decoder 9317
9317 decoder
7 segment decoder TTL
9317
ttl 9317
9317CDM
TTL family
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facon bf 39933
Abstract: facon BA 204 115 Facon Bb 37 933 facon bh 39933 BD 39-931 Facon BH 37 933 bd 39933 FBH15 facon bd 39933 Facon bh 36931
Text: FACON 4SE D • 3M5b203 □□□□□Ob S FACON SEMICONDUCTEURS/SEMtCONDUCTORS ■ FCN ~T~2 3 ' 0 { single phase moulded bridges 0,8 Amp to 1,5 Amp ponts monophasés moulés 0,8 Amp à 1,5 Amp V RRM Typ es V r MS recom mended max id on re sistive load
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3M5b203
FBD08
FBH08
CB-198
CB-237
facon bf 39933
facon BA 204 115
Facon Bb 37 933
facon bh 39933
BD 39-931
Facon BH 37 933
bd 39933
FBH15
facon bd 39933
Facon bh 36931
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PS2801C-4
Abstract: ps2801c-1 f4 1c
Text: DATA SHEET PHOTOCOUPLER PS2801C-1,PS2801C-4 HIGH ISOLATION VOLTAGE SSOP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2801C-1 and PS2801C-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SSOP for high density applications to realize an excellent cost performance.
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PS2801C-1
PS2801C-4
PS2801C-4
16-pin
PS2801C-1-F3,
PS2801C-4-F3,
E72422
EN60747-5-2
VDE0884
f4 1c
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PS2801C-4
Abstract: PS2801C-1 ps2801C 9311c PS2801C-1-F3-A
Text: DATA SHEET PHOTOCOUPLER PS2801C-1,PS2801C-4 HIGH ISOLATION VOLTAGE SSOP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2801C-1 and PS2801C-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SSOP for high density applications to realize an excellent cost performance.
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PS2801C-1
PS2801C-4
PS2801C-4
16-pin
PS2801C-1-F3,
PS2801C-4-F3,
E72422
EN60747-5-2
VDE0884
ps2801C
9311c
PS2801C-1-F3-A
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PDF
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EUPEC DIODE
Abstract: A198S
Text: EUPEC blE » • 3HD3ET7 □□□133D TT7 ■LIPEC dv/dt cr Vgt Igt RthJC DIN DIN tvj = tv) = 180 °el I EC 747-6 I EC 747-6 25 °C 25 “C sinus F a s t a s y m m e tr ic th y ris to rs Type A 198 S A 358 S "f-.'j max 10 ms, t j| max sin. ‘vi = tvi =
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mp42
Abstract: No abstract text available
Text: MP4201 POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE L2-7T-MOSm 4 IN 1 HIGH POWER HIGH SPEED SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 2 5.2 ± 0 .2 LOAD SWITCHING. • 4-Volt Gate D rive Available
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MP4201
100/JA
mp42
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PDF
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Motors
Abstract: No abstract text available
Text: BCI-Motors BCI motor – the complete drive solution with a design made to order Technical Information Apart from providing exceptional value for money, the mechanically commutated internal rotor BCI In brief and straight to the point motors provide everything expected in a genuine ebm-papst motor:
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1078GB
D-78112
Motors
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Untitled
Abstract: No abstract text available
Text: RTU500 series Data Sheet Modem 560FSM11 subrack mounting and can be used as a standalone unit. Modem 560FSM11 Characteristics The 560FSM11 is designed for snap-in DIN-rail mounting. All necessary configuration like twoor four-wire operation, receiver sensitivity, line
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RTU500
560FSM11
560FSM11
RS232-D
1KGT019300R0001
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B2HKF
Abstract: b2hkf70n CS 13001 IC 7476 DDB6U110N AD60F DD86 ac switches isoPACK B6U60 TDB6HK165N
Text: Fast Asymmetric Thyristors Type V V drm V V dsm = rrm V V drm V It r s m A rrm C tq = 1 p S It s m i i 2dt kA A2s 10ms 10ms tyj max tyj max It a v m ^ c V (TO ) rT V m ii (di/dt)cr tq 1 ) (dv/dt)cr V gt Igt A/ps MS V/|JS DIN IEC 747-6 V mA tvj = 1 8 0 °
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GaAs 1000 nm Infrared Diode,
Abstract: SE1450-002L se1450-003l
Text: SE1450 GaAs Infrared Emitting Diode FEA TU R ES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD 1420 photodiode, SD 1440 phototransistor and SD1410
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SE1450
SD1410
SE1450
SE1450-XXXL)
SE1450-XXX
SD1440
GaAs 1000 nm Infrared Diode,
SE1450-002L
se1450-003l
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Untitled
Abstract: No abstract text available
Text: T T ET SS ? 0 0 M b 3S 7 23b « S G T H STP18N1 o STP18N1OFI SGS-THOMSON ¡[LJOT «§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR . • ■ . . ■ ■ ■ 100 V 100 V R d S oii D D V dss STP18N 10 STP18N 10FI A A O O TYPE Ip 18 A 11 A TYPICAL Ros(on) = 0.095 LI
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STP18N1
STP18N1O
STP18N
100VDS
STP18N10/FI
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL POWER MOSFETS SSD2106 FEATURES • Lower R ds <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate ceil structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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SSD2106
C1471
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE E5E D ^^53= 131 aaaa343 a • B Y 359 SERIES 7 = <93-1 7 FAST HIGH-VOLTAGE RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in TO-220 plastic envelopes, featuring fast recovery times. They are intended for use as an anti-parallel diode to GTOs and similar high-voltage switches,
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aaaa343
O-220
BY359â
bbS3131
T-03-17
BY359
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irfp054
Abstract: diode ior 0014 CD 1517
Text: International S Rectifier PD-9.544A IRFP054 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 6 0 V ^DS on = 0 .0 1 4 Q
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IRFP054
O-247
T0-220
O-218
irfp054
diode ior 0014
CD 1517
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985-117
Abstract: PD 1515 2322 644 D1029N D2209N D660N D748N
Text: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 460 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]
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D748N
D660N
D1029N
D2209N
1KK34
985-117
PD 1515
2322 644
D1029N
D2209N
D660N
D748N
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PDF
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D1049N
Abstract: D428N D660N D798N
Text: M6 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 400 Veff 500 Veff 550 Veff 270 V 1400 V 335 V 1600 V 370 V 1800 V ~ ~ ~ ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L
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D428N
D660N
D798N
D1049N
174KK34
D1049N
D428N
D660N
D798N
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usr932
Abstract: USR rms zener Diode But USR Semiconductor diode 934
Text: USR 9 3 1 thriu USR 9 3 4 Microsemi Corp. D ESC R IPTIO N : Microsemi is now offering a com plete series of ultra-stable, certified, 9.3 Volt reference diodes w ith long-term stabilities as low' as 5 PPM /1000 hours. These diodes are built using the ultra-reliable and stable TO P* therm al-oxidepassivation process.
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PPM/1000
400mW
usr932
USR rms
zener Diode But
USR Semiconductor
diode 934
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A 933 S transistors
Abstract: p06e
Text: V P 06E ßi S u p ertex inc . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss / Order Number / Package b v dgs R dS(ON (max) ' d(ON) (min) TO-39 TO-92 TO-220 DICEt -450V 3on -0.2A VP0645N2 VP0645N3 VP0645N5
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VP0645N2
VP0650N2
VP0645N3
VP0650N3
O-220
VP0645N5
VP0650N5
VP0645ND
VP0650ND
-450V
A 933 S transistors
p06e
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snubber FOR 3PHASE BRIDGE RECTIFIER
Abstract: EUPEC Thyristor gct thyristor 74x26mm eupec igbt BSM 100 gb FAST HIGH VOLTAGE DIODE 4000 V EUPEC D1201 D1201 D170S eupec phase control thyristor
Text: . power the Home Products F-Diode News Contact Editorials GTO Diodes . V RRM = 2500 V 2500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 6000 V 6000 V Company Search Site Content Fast Rectifier Diodes Freewh. Diodes for GCT & IGBT GTO Snubberdiodes part-no.
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D170S
D170U
snubber FOR 3PHASE BRIDGE RECTIFIER
EUPEC Thyristor
gct thyristor
74x26mm
eupec igbt BSM 100 gb
FAST HIGH VOLTAGE DIODE 4000 V
EUPEC D1201
D1201
eupec phase control thyristor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount
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BUK583-60A
OT223
BUK583-60A
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1RFP054
Abstract: 15-17-In MAX7064
Text: OOlSMMfl G14 • INR International ic?R Rectifier PD.9544A 1RFP054 INTERNATIONAL RECTIFIER HEXFET Power M O SFET Dynamic dv/dt Rating Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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1RFP054
IRFP054
1RFP054
15-17-In
MAX7064
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T1078N
Abstract: T1258N T348N T398N T828N
Text: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 100 V 200 V 300 V 200 V 400 V 600 V + - Kühlblöcke für verstärkte Luftkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock
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T348N
T398N
T828N
T1078N
T1258N
T1078N
T1258N
T348N
T398N
T828N
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PDF
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A 933 S transistors
Abstract: VP0645N5 VP0650N2 VP06E
Text: VP 06E LJ S u p ertex inc. ✓jpv P-Channel Enhancement-Mode M B/ Vertical DMOS FETs Ordering Information Standard Commercial Devices f Order Number / Package BV dss / ^DS O N) *D|ON) b v dgs (max) (min) TO-39 TO-92 TO-220 DICE* -450V 3on -0.2A VP0645N2 VP0645N3
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VP0645N2
VP0650N2
VP0645N3
VP0650N3
O-220
VP0645N5
VP0650N5
VP0645ND
VP0650ND
-450V
A 933 S transistors
VP0650N2
VP06E
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