Untitled
Abstract: No abstract text available
Text: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such
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DK-8381
KLED0002E01
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Q62702-A1214
Abstract: GP 018 DIODE VES05991 diode marking AU
Text: BA 892 Silicon Rf Switching Diode Preliminary data • For VHF band switching 2 in TV / VTR tuners • Low forward resistance, small capacitance, small inductance 1 VES05991 Type Marking Ordering Code Pin Configuration Package BA 892 A Q62702-A1214 1=C SCD-80
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VES05991
Q62702-A1214
SCD-80
100MHz
EHD07009
EHD07010
Q62702-A1214
GP 018 DIODE
VES05991
diode marking AU
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Untitled
Abstract: No abstract text available
Text: HL-PCB-2018S9FU51GC Features RED GREEN Description ●2.0mmx1.8mm SMT LED, 0.7mm THICKNESS. ●LOW POWER CONSUMPTION. ●ONE RED, ONE GREEN AND ONE BLUE CHIPS IN The Green source color devices are made with GaP on Sapphire Light Emitting Diode. The Red source color devices are made with DH InGaAIP on
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HL-PCB-2018S9FU51GC
3000PCS
22Pcs.
1000Hrs.
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SK 18752
Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Text: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,
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O03ED0
dete7837
H1-O03ED0-0805020NM
SK 18752
SK 18751
2SC5586
SI-18752
fn651
709332a
CTB-34D
SLA6102
SLA4052
SI 18751
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triac zd 607
Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
Text: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes
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The32-246622
H1-O03EA0-0510020NM
triac zd 607
transistor C5586
bridge rectifier sanken rb40
rb40 bridge rectifier
rb60 bridge rectifier
ZD 607 - triac
CTPG2F
CTX12S
Toshiba transistor c4468
STA524A
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transistor BU 102S
Abstract: fgt313 stp 10n40 SLA4052 BU 102S c4381 high voltage 3-phase motor driver ic RELAY sz - 2103 12V C5100 MOSFET SLA5096
Text: SEMICONDUCTORS GENERAL CATALOG 2010 Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China
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H1-O03EE0-1004015ND
transistor BU 102S
fgt313
stp 10n40
SLA4052
BU 102S
c4381
high voltage 3-phase motor driver ic
RELAY sz - 2103 12V
C5100 MOSFET
SLA5096
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SSC9512
Abstract: STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based
Text: Bulletin No O03EH0 （Mar, 2013） Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China
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O03EH0
STR-X6768N
TMA256B-L
STR-X6769
TMB166S-L
STR-X6769B
TMB206S-L
STR-Y6453
VR-60SS
STR-Y6456
SSC9512
STR-W6750
B1560 equivalent
STRW6252
str3a100
sanken audio modules
24v dc soft start motor control diagram
DARLINGTON TRANSISTOR ARRAY
strw6053
inverter 12v to 220 ac mosfet based
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IC951
Abstract: stm diode C818 smd diode mx c321 ic501 smd diode ge r803 pin diagram of optical detector IC501 R435 RF receiver MODULE CIRCUIT DIAGRAM LDR 03 PHOTO RESISTOR 2222A SMD transistor C458
Text: APPLICATION NOTE Fiber optic transceiver demo board STM16 OM5801 AN96051 Philips Semiconductors Philips Semiconductors OM5801 Application Note AN96051 2 Philips Semiconductors Fiber optic transceiver demo board STM16 Application Note AN96051 APPLICATION NOTE
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STM16
OM5801
AN96051
IC951
stm diode C818
smd diode mx c321
ic501
smd diode ge r803
pin diagram of optical detector IC501
R435 RF receiver MODULE CIRCUIT DIAGRAM
LDR 03 PHOTO RESISTOR
2222A SMD
transistor C458
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P-MOSFET
Abstract: TC7920 ir 222 125OC MD1822 C7920
Text: Supertex inc. TC7920 Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes Features ► ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated drain output high voltage diodes Integrated gate-to-source resistor
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TC7920
TC7920
12-Lead
DSFP-TC7920
A121010
P-MOSFET
ir 222
125OC
MD1822
C7920
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A121010
Abstract: N mosfet 100v 500A
Text: Supertex inc. TC7920 Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes Features ► ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated drain output high voltage diodes Integrated gate-to-source resistor
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TC7920
TC7920
12-Lead
DSFP-TC7920
A121010
A121010
N mosfet 100v 500A
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HV9919
Abstract: No abstract text available
Text: HV9919 Hysteretic, Buck, High Brightness LED Driver with High-Side Current Sensing Features General Description ► ► ► ► ► ► ► ► ► The HV9919 is a PWM controller IC designed to drive high brightness LEDs using a buck topology. It operates from an
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HV9919
40VDC
DSFP-HV9919
A121608
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A-132
Abstract: YG965C6R diode lt 247 TO-220F torque FUJI DIODES
Text: DATE DRAWN Feb.-28'-02 CHECKED Feb.-28'-02 Feb.-28'-02 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
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YG965C6R
MS5D1553
H04-004-07
H04-004-03
A-132
YG965C6R
diode lt 247
TO-220F torque
FUJI DIODES
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A-132
Abstract: YA962S6R
Text: DATE DRAWN CHECKED Feb.-28'-02 Feb.-28'-02 Feb.-28'-02 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
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YA962S6R
MS5D1558
H04-004-07
H04-004-03
A-132
YA962S6R
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MS5D1445
Abstract: A-132 PH967C6 resin compound to247 to-247 to-220 to-3p d404
Text: DATE DRAWN Jan.-28-'02 CHECKED Jan.-28-'02 Jan.-28-'02 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
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PH967C6
MS5D1445
H04-004-07
H04-004-03
MS5D1445
A-132
PH967C6
resin compound to247
to-247 to-220 to-3p
d404
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YG967C6
Abstract: A-132 YG967C6R
Text: DATE DRAWN Feb.-28'-02 CHECKED Feb.-28'-02 Feb.-28'-02 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
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YG967C6R
MS5D1555
H04-004-07
H04-004-03
YG967C6
A-132
YG967C6R
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YG963S6R
Abstract: A-132 MS5D1437 yg963s6
Text: DATE DRAWN CHECKED Jan.-24-'02 Jan.-24-'02 Jan.-24-'02 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
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YG963S6R
MS5D1437
H04-004-07
H04-004-03
YG963S6R
A-132
MS5D1437
yg963s6
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YG962S6R
Abstract: A-132 4060N yg962s6
Text: DATE DRAWN Jan.-24-'02 CHECKED Jan.-24-'02 Jan.-24-'02 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
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YG962S6R
MS5D1436
H04-004-07
H04-004-03
YG962S6R
A-132
4060N
yg962s6
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YA963S6R
Abstract: A-132
Text: DATE DRAWN Feb.-28-'02 CHECKED Feb.-28-'02 Feb.-28-'02 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
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YA963S6R
MS5D1559
H04-004-07
H04-004-03
YA963S6R
A-132
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A116 diode
Abstract: DIODE A116 as 15-f DIODE A118 AP-222 diode smd6 44
Text: Introduction Diode array summary see page 227 Part number DC reverse voltage V r (V) Mean rectifying current l0 (mA) Reverse Terminal recovery time capacitance (max) trr (ns) CT (PF) Package type Circuit diagram High speed switching diode arrays FMN1 80
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IMN11
IMP11
DAN209S
DAN215
DAN803
DAP209S
DAP215
AP401
AN403
AP601
A116 diode
DIODE A116
as 15-f
DIODE A118
AP-222
diode smd6 44
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE DF150AA120/160 UL;E76102 M Power Diode Module D F 1 50A A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri cally isolated from semiconductor elements for simple heatsink
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DF150AA120/160
E76102
150Amp
DF150AA120
DF150AA
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Untitled
Abstract: No abstract text available
Text: SIEM ENS BA 892 Silicon Rf Switching Diode Preliminary data • For VH F band switching in TV / VTR tuners • Low forward resistance, small capacitance, small inductance Type Marking Ordering Code Pin Configuration BA 892 A Q62702-A1214 1 =C 2 =A Package
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Q62702-A1214
SCD-80
E35b05
01201fl4
100MHz
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DAN202K
Abstract: DAP202U2 DAP222 DAP202K
Text: Diodes Ultra High-Speed Switching Diode Arrays DA114/DA121/DA227 DAN202K/DAN202U/DAN212K/DAN222 DAP202K/DAP202U/DAP222 •Applications •E xternal dimensions Units; mm Ultra high speed switching DAN202K / DAP202K / DAN212K 2.9±0.2 1.9±0.2 •Features
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DA114/DA121/DA227
DAN202K/DAN202U/DAN212K/DAN222
DAP202K/DAP202U/DAP222
DAN202K
DAP202K
DAN212K
SC-59
DA114
DAN202U
DAP202U
DAP202U2
DAP222
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222 diode
Abstract: DIODE A112 A114D A115D DA115 VN247 DAN202C DAN212C smd diode DAN202K AP-222
Text: DA112 DA113 DA114 DA115 DA116 DA118 DA119 DA120 DA121 DAN202C DAP202C DAN202K DAP202K DAN202U DAP202U DAN212C DAN212K DAN222 DAP222 Diode, array, high-speed switching, surface mount In these single packages, there are one or two diodes as shown in the circuit
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DA112
DA113
DA114
DA115
DA116
DA118
DA119
DA120
DA121
DAN202C
222 diode
DIODE A112
A114D
A115D
VN247
DAN212C
smd diode DAN202K
AP-222
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F760
Abstract: GGT DIODE ERB32 F553 H150 T151 T810 T930 J3E diode
Text: ERB32 i .2A • * » ■ * » : Outline Drawings FAST RECOVERY DIODE : Features Super high speed switching H S tF I Marking • te V F A 5- 3 - V ; fi Low V F Color code : Orange • «fifS-ft Abridged type name ŒŒ? « Voltoge class D yh fc Lot No. High reliability
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ERB32
TKESTS30
aTi30S3
I95t/R89)
F760
GGT DIODE
F553
H150
T151
T810
T930
J3E diode
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