Untitled
Abstract: No abstract text available
Text: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such
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DK-8381
KLED0002E01
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Untitled
Abstract: No abstract text available
Text: ATP207 Ordering number : ENA1319A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP207 General-Purpose Switching Device Applications Features • • • Low ON-resistance 4.5V drive Halogen free compliance Large current Slim package Protection diode in
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ATP207
ENA1319A
A1319-7/7
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Untitled
Abstract: No abstract text available
Text: ATP202 Ordering number : ENA1317A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP202 General-Purpose Switching Device Applications Features • • • Low ON-resistance 4.5V drive Halogen free compliance Large current Slim package Protection diode in
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ATP202
ENA1317A
A1317-7/7
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A1318 T
Abstract: No abstract text available
Text: ATP203 Ordering number : ENA1318A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP203 General-Purpose Switching Device Applications Features • • • Low ON-resistance 4V drive Halogen free compliance Large current Slim package Protection diode in
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ATP203
ENA1318A
A1318-7/7
A1318 T
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a1310
Abstract: No abstract text available
Text: HL-PCB-3231S9AM1GC-A Features Description z3.2mmx3.1mm zLOW SMT LED, 0.68mm THICKNESS. POWER CONSUMPTION. zWIDE zIDEAL The Red source color devices are made with DH GaP on GaAs substrate Light Emitting Diode. VIEWING ANGLE. The Green source color devices are made with Gallium
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HL-PCB-3231S9AM1GC-A
2000PCS
A1310
22Pcs.
1000Hrs.
a1310
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1318A ATP203 N-Channel Power MOSFET http://onsemi.com 30V, 75A, 8.2mΩ, Single ATPAK Features • • • Low ON-resistance 4V drive Halogen free compliance Large current Slim package Protection diode in • • • Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1318A
ATP203
PW10s)
PW10s,
A1318-7/7
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1317A ATP202 N-Channel Power MOSFET http://onsemi.com 30V, 50A, 12mΩ, Single ATPAK Features • • • Low ON-resistance 4.5V drive Halogen free compliance Large current Slim package Protection diode in • • • Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1317A
ATP202
PW10s)
PW10s,
L100H,
A1317-7/7
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1319A ATP207 N-Channel Power MOSFET http://onsemi.com 40V, 65A, 9.1mΩ, Single ATPAK Features • • • Low ON-resistance 4.5V drive Halogen free compliance Large current Slim package Protection diode in • • • Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1319A
ATP207
PW10s)
PW10s,
A1319-7/7
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sony flyback transformer
Abstract: smps repair circuit ultrasonic transducers 48V sony flyback transformer datasheet fast recovery diode 600v 5A Ultrasonic Cleaning Transducer FCH10A15 sony flyback FAST RECOVERY DIODE 200ns 8A 40V FAST RECOVERY DIODE 200ns
Text: TABLE of CONTENTS Diode — EMI and Efficiency————–—————————– Rectification Noise—————————————————— 3 series of SBD———————————————————— SBD and Thermal Runaway——————————————
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V23870-A1313-K101
Abstract: V23870-A1313-K201
Text: Fiber Optics OptiPort SFF BIDI Transceiver 100 Mbit/s, 1550 nm Tx / 1310 nm Rx V23870-A1313-Kx01 Preliminary Datasheet This OptiPort BIDI transceiver is a bi-directional Small Form Factor SFF transceiver designed for full-duplex communication over a single fiber. The
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V23870-A1313-Kx01
V23870-A1313-K101
V23870-A1313-K201
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Untitled
Abstract: No abstract text available
Text: Fiber Optics OptiPortTM SFF BiDi -Transceiver 100 Mbit/s, 1550 nm Tx / 1310 nm Rx V23870-A1313-Kx01 Preliminary Datasheet This OptiPortTM BIDI®-TRX is a bi-directional Small Form Factor SFF transceiver designed for fullduplex communication over a single fiber. The single
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V23870-A1313-Kx01
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transmitter laser 1550nm rise time
Abstract: 1310 nm laser diode style Laser Diode 1550 nm dBm
Text: V23870-A1311-X1Y200 155 Mb/s, 1550 nm Tx / 1310 nm Rx Bi-Directional SFF Transceiver 9.71 .382 13.50 .531 3 .118 12 .472 0.38 .015 1.78 .070 0.25 .010 7.11 .280 TEMPERATURE MEASUREMENT LOCATION 49.01 1.930 3.92 .154 2X 17.79 .700 1.07 .042 4.56 .180 20.19
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V23870-A1311-X1Y200
V23870-Axxx1-A
V23870-Axxx1-B
V23870-Axxx1-C
V23870-Axxx1-F
V23870-Axxx1-H
V23870-Axxx1-K
1300nm
transmitter laser 1550nm rise time
1310 nm laser diode style
Laser Diode 1550 nm dBm
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TDA 2388
Abstract: No abstract text available
Text: V23870-A1311-X1Y200 155 Mb/s, 1550 nm Tx / 1310 nm Rx Bi-Directional SFF Transceiver 9.71 .382 13.50 .531 3 .118 12 .472 0.38 .015 1.78 .070 0.25 .010 7.11 .280 TEMPERATURE MEASUREMENT LOCATION 49.01 1.930 3.92 .154 2X 17.79 .700 1.07 .042 4.56 .180 20.19
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V23870-A1311-X1Y200
V23870-Axxx1-A
V23870-Axxx1-B
V23870-Axxx1-C
V23870-Axxx1-F
V23870-Axxx1-H
V23870-Axxx1-K
1300nm
TDA 2388
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Untitled
Abstract: No abstract text available
Text: Fiber Optics V23870-A1317-K500 TM Optiport -iSFP BiDi -TRX Intelligent SFP Pluggable Bi-Directional Transceiver 155Mbit/s 1550nm Tx / 1310nm Rx LC Connector Preliminary Data The Optiport TM -iSFP BiDi® -TRX is an Intelligent Small Form Factor Pluggable SFP transceiver designed for
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V23870-A1317-K500
155Mbit/s
1550nm
1310nm
SFF-8472
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Untitled
Abstract: No abstract text available
Text: 3QE D • b457SaS OOETHMB 4 ■ N E C ELECTRONICS INC T'Hl-07 LASER DIODE J N D L5009D 1 310 nm O P T IC A L F IB ER C O M M U N IC A T IO N S InG aA sP D C -P B H LA SER D IO D E DESCRIPTIO N NDL60Q9D is a1310 nm laser diode especially designed for long distance high capacity transmission systems. The DC-PBH
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b457SaS
Hl-07
L5009D
NDL60Q9D
a1310
NDL5009D,
NDL5009D1.
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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Untitled
Abstract: No abstract text available
Text: THYRISTOR MODULE PK1PD1250QB Power Thyristor/Diode Module PK 250G B series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat ings up to 800 V are available. A p p lica tio n s
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PK1PD1250QB
PK250GB-40
PD250GB-40
PE250GB-40
00Q1SST
PK250GB
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Untitled
Abstract: No abstract text available
Text: THYRISTOR MODULE P K pd,pe 2 0 0 G B UL;E76102(M) Power Thyristor/Diode Module P K 2 0 0 G B series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat ings up to 800 V are available.
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E76102
PK200GB-40
PD200GB-40
PK200GB-80
PD200GB-80
PE200GB-40
PE200GB-80
7TT12M3
0Q02012
PK200GB
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Ry110
Abstract: diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717
Text: D 94D 0 0 0 1 3 2 5 7 8 2 5 2 CUSTOM COMPONENTS INC 7 " - o / - o ^ Ë F | 2 5 7 f l E S S D0DDD13 4 Custom Components, Inc. Box SSUt Lebanon, AT. J. 088SS 201 534-6151 TUNNEL DIODE CROSS REFERENCE GENERAL ELECTRIC AERTECH AERTECH # C C I# AERTECH # CCI #
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QD0D013
534-61S1
A1D207A
A1D207E
A1E207A
A1E207E
A1A210D
A1A210E
A1B210D
A1B210E
Ry110
diode cross reference
RY104
a2305
RY115
MICROWAVE ASSOCIATES
IN3716
diode ry24
RY101
1N3717
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power MOS Transistor VDS /D = 400 V = 5.5 A ^ D S |o n = • 1 BUZ 60 Q N channel • Enhancement mode • Avalanche-proof • Package: TO-220 A B 1) Type Ordering code BUZ 60 C67078-A1312-A2 Maximum Ratings Parameter Symbol Values Unit
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O-220
C67078-A1312-A2
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C67078-A1315-A2
Abstract: No abstract text available
Text: SIEMENS SI PM OS Power MOS Transistors ’ D SC on • • • • BUZ 76 BUZ 76 A = 400 V = 3 .0 / 2.7 A = 1 .8 /2 .5 Q N channel Enhancement mode Avalanche-proof Package: TO-220 A B 1) Type Ordering code BUZ 76 C67078-A1315-A2 BUZ 76 A C67078-A1315-A3 Maximum Ratings
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O-220
C67078-A1315-A2
C67078-A1315-A3
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6497A Monolithic Digital 1C LB11975 SAÑYO High-Speed CD-ROM Spindle Motor Driver IC Overview Package Dimensions The LB11975 is a m onolithic bipolar IC developed for uses as a spindle motor driver for high-speed CD-ROM and D VD -RO M drives. To m inim ize heat generation
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ENN6497A
LB11975
LB11975
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transistor buz 36
Abstract: A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A
Text: IEMENS AKTIENGESELLSCHAF 03E D • 7 ^ 3*7-0/ ô23StQS QOlSbBS ö « S I E G Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancem ent types in plastic package TO-220 AB Typ Type ^DS max V A
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23StQS
T0-220
O-220
BUZ10S2
Z72AL
Z73AL
O-218
transistor buz 36
A1301 transistor
Z346
z309
A3206A
A1306A
z326
A1320A
A1610-A2
Z22A
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