Untitled
Abstract: No abstract text available
Text: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material
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STPSC16H065C
O-220AB
STPSC16H065CT
DocID024810
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PDF
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Untitled
Abstract: No abstract text available
Text: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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STPSC12H065C
O-220AB
STPSC12H065CT
DocID024809
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PDF
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Untitled
Abstract: No abstract text available
Text: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material
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Original
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STPSC16H065C
O-220AB
STPSC16H065CT
DocID024810
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PDF
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Untitled
Abstract: No abstract text available
Text: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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Original
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STPSC8H065C
O-220AB
STPSC8H065CT
DocID024808
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PDF
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Untitled
Abstract: No abstract text available
Text: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 1 K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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Original
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STPSC20H065C
O-220AB
STPSC20H065CT
DocID023605
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PDF
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Pin diode G4S
Abstract: VSO05561
Text: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W C1/A2 3 BAR 63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1
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Original
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3-04W
3-05W
3-06W
VSO05561
EHA07181
EHA07179
EHA07187
OT-323
Pin diode G4S
VSO05561
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PDF
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Pin diode G4S
Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Text: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181
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Original
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BAR63.
BAR63-04W
BAR63-05W
BAR63-06W
VSO05561
EHA07181
EHA07179
EHA07187
Pin diode G4S
BAR63-04W
BAR63-05W
BAR63
BAR63-06W
VSO05561
diode C2
marking c2 diode
diode MARKING A1
marking G5s
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PDF
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STPS50u100
Abstract: STPS50U100CT STPS50U100C
Text: STPS50U100C ULVF power Schottky rectifier Features A1 • ultralow forward voltage drop ■ high current capability ■ high frequency operation K A2 Description A2 A1 K A2 A1 The STPS50U100C is a dual power Schottky diode rectifier, suited for high frequency switch
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STPS50U100C
STPS50U100C
O-220AB
O-220AB
STPS50U100CT
STPS50U100CR
STPS50u100
STPS50U100CT
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PDF
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STPS20
Abstract: No abstract text available
Text: STPS20SM60C Power Schottky rectifier Features • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A1 K A2 K K A2 A2 Description A1 The STPS20SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode
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Original
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STPS20SM60C
STPS20SM60C
O-220AB,
O-220FPAB,
STPS20SM60CG-TR
STPS20SM60CR
O-220AB
STPS20SM60CT
O-220FPAB
STPS20SM60CFP
STPS20
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PDF
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Untitled
Abstract: No abstract text available
Text: STPS20SM60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS20SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode
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STPS20SM60C
STPS20SM60C
O-220AB,
O-220FPAB,
O-220AB
STPS20SM60CT
O-220FPAB
STPS20SM60CFP
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PDF
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Untitled
Abstract: No abstract text available
Text: STPS40SM60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS40SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode
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STPS40SM60C
STPS40SM60C
STPS40SM60CG-TR
STPS40SM60CR
O-220AB,
O-220AB
STPS40SM60CT
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PDF
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Untitled
Abstract: No abstract text available
Text: STPS30M60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS30M60C is a dual diode Schottky rectifier, suited for high frequency switch mode
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STPS30M60C
STPS30M60C
STPS30M60CG-TR
STPS30M60CR
O-220AB,
O-220AB
STPS30M60CT
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PDF
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Untitled
Abstract: No abstract text available
Text: STPS30SM60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS30SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode
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STPS30SM60C
STPS30SM60C
STPS30SM60CG-TR
STPS30SM60CR
O-220AB,
O-220AB
STPS30SM60CT
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PDF
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Untitled
Abstract: No abstract text available
Text: STPS20M60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS20M60C is a dual diode Schottky rectifier, suited for high frequency switch mode
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STPS20M60C
STPS20M60C
STPS20M60CG-TR
STPS20M60CR
O-220AB,
O-220AB
STPS20M60CT
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PDF
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SC75
Abstract: BAV70T
Text: BAV70T Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 C1/C2 3 1 1 2 A1 A2 VPS05996 EHA07179 Type Marking BAV70T A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV70T
VPS05996
EHA07179
Aug-24-2001
EHB00068
EHB00065
SC75
BAV70T
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PDF
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BAV99T
Abstract: SC75
Text: BAV99T Silicon Switching Diode 3 • For high-speed switching applications • Connected in series 2 C1/A2 3 1 1 2 A1 C2 VPS05996 EHA07181 Type Marking BAV99T A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV99T
VPS05996
EHA07181
Jun-29-2001
EHB00078
EHB00075
BAV99T
SC75
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PDF
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bav99w A7S
Abstract: BAV99W VSO05561
Text: BAV99W Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV99W
VSO05561
EHA07181
OT323
Aug-20-2001
EHB00078
EHB00075
bav99w A7S
BAV99W
VSO05561
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PDF
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Marking a1s
Abstract: BAW56W VSO05561
Text: BAW56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type BAW56W Marking A1s 1 = C1 Pin Configuration 2 = C2 3 = A1/A2 Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAW56W
VSO05561
EHA07187
OT323
Jun-29-2001
EHB00093
EHB00090
Marking a1s
BAW56W
VSO05561
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PDF
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BAV70W
Abstract: VSO05561 10TSV
Text: BAV70W Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 C1/C2 3 1 1 2 A1 A2 VSO05561 EHA07179 Type Marking BAV70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV70W
VSO05561
EHA07179
OT323
Jul-06-2001
EHB00068
EHB00065
BAV70W
VSO05561
10TSV
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PDF
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STTH602CBY
Abstract: No abstract text available
Text: STTH602C-Y Automotive ultrafast recovery diode Datasheet production data Features • Suited for SMPS ■ Low losses A1 ■ Low forward and reverse recovery time A2 ■ High surge current capability ■ High junction temperature K Description A2 K This dual center tap diode is suited for switch
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STTH602C-Y
STTH602CBY-TR
STTH602CBY
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PDF
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Untitled
Abstract: No abstract text available
Text: STTH16R04C Ultrafast recovery diode Main product characteristics IF AV 2X8A VRRM 400 V Tj 175° C VF (typ) 0.9 V trr (typ) 25 ns A1 A2 A2 A2 A1 • Very low switching losses ■ High frequency and/or high pulsed current operation ■ High junction temperature
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STTH16R04C
O-220FPAB
STTH16R04CFP
O-220AB
STTH16R04CT
STTH16R04CG
STTH16R04C
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PDF
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STTH16R04CT
Abstract: JESD97 STTH16R04C STTH16R04CFP STTH16R04CG STTH16R04CG-TR
Text: STTH16R04C Ultrafast recovery diode Main product characteristics IF AV 2X8A VRRM 400 V Tj 175° C VF (typ) 0.9 V trr (typ) 25 ns A1 A2 A2 A2 A1 • Very low switching losses ■ High frequency and/or high pulsed current operation ■ High junction temperature
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STTH16R04C
O-220FPAB
STTH16R04CFP
O-220AB
STTH16R04CT
STTH16R04CG
STTH16R04C
STTH16R04CT
JESD97
STTH16R04CFP
STTH16R04CG
STTH16R04CG-TR
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PDF
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siemens igbt BSM 300
Abstract: Q67040-A4221-A2 BSM 214 A Q67040-A4222-A2 Q67040-A4225-A2 Q67040-A4228-A2 Q67040-A4229-A2 Q67040-A4230-A2 Q67040-A4420-A2 Q67040-A4423-A2
Text: Duo-Packs IGBT + antiparallele Diode Typ Type V BUP 400 D Duo-Packs (IGBT + antiparallel diode) A Bestellnummer Ordering Code Gehäuse Package Bild Figure 600 14.0 Q67040-A4423-A2 P-T0220-3-1 11b BUP 602 D 600 36.0 Q67040-A4229-A2 P-T0218-3-1 10b BUP 603 D
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OCR Scan
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Q67040-A4423-A2
P-TO220-3-1
Q67040-A4229-A2
P-T0218-3-1
Q67040-A4230-A2
Q67040-A4420-A2
P-T0220-3-1
Q67040-A4225-A2
siemens igbt BSM 300
Q67040-A4221-A2
BSM 214 A
Q67040-A4222-A2
Q67040-A4228-A2
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PDF
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BAV 99W Silicon Switching Diode Array >Connected in series 1For high speed switching applications C1/A2 nr T J Type Marking Ordering Code Pin Configuration BAV 99W A7s Q62702-A1051 1=A1 2=A2 Package 3=C1/C2 SOT-323 Maximum Ratings per Diode Symbol
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OCR Scan
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Q62702-A1051
OT-323
23SL05
0235b05
D15D412
D1ED413
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PDF
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