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    DIODE A30 Search Results

    DIODE A30 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE A30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    thyristor control arc welding rectifier circuit

    Abstract: 400 amp SCR used for welding rectifier welding transformer SCR ABB thyristor modules PN5-10DA 400 amp thyristor used for welding rectifier MDS100 three phase triac control arc welder inverter 3KW INDUCTION HEATING POWER SUPPLY
    Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing solid state relays, thyristor modules, diode modules, thyristor diode modules, fast recovery diode, single phase & three phase bridge rectifier and press fit diodes etc. along with about 150


    Original     		PDF ISO9001 DXC-614Heatsink thyristor control arc welding rectifier circuit 400 amp SCR used for welding rectifier welding transformer SCR ABB thyristor modules PN5-10DA 400 amp thyristor used for welding rectifier MDS100 three phase triac control arc welder inverter 3KW INDUCTION HEATING POWER SUPPLY

    A306

    Abstract: STTA306B STTA306B-TR US020 MOSFET 1200v 3a
    Text: STTA306B  TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM trr (typ) 600 V 20 ns VF (max) 1.65 V K FEATURES AND BENEFITS SPECIFICTO ”FREEWHEELMODE”OPERATIONS: FREEWHEEL OR BOOSTER DIODE ULTRA-FAST, AND SOFT RECOVERY


    Original     		PDF STTA306B A306 STTA306B STTA306B-TR US020 MOSFET 1200v 3a

    400v 3a ultra fast recovery diode

    Abstract: ST A306 TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE 400v 3a low vf diode A306 STTA306B STTA306B-TR
    Text: STTA306B TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 600 V trr (typ) 20 ns VF (max) 1.65 V K FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST, AND SOFT RECOVERY.


    Original     		PDF STTA306B 400v 3a ultra fast recovery diode ST A306 TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE 400v 3a low vf diode A306 STTA306B STTA306B-TR

    A306

    Abstract: STTA306B STTA306B-TR ST A306
    Text: STTA306B TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 600 V trr (typ) 20 ns VF (max) 1.65 V K FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST, AND SOFT RECOVERY.


    Original     		PDF STTA306B A306 STTA306B STTA306B-TR ST A306

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    DTM180AA

    Abstract: DT-408 STD8018A LP05018 LS1012 DTM180AB
    Text: ZERO-BIAS SCHOTTKY DIODE DETECTORS 100 KHz - 50 GHz FEATURES • No Bias Required • Matched Input for Excellent VSWR* • Extremely Flat Frequency Response* • Very High Sensitivity DZ Series * (DZR & DZM Series) APPLICATIONS ENVIRONMENTAL RATINGS


    Original     		PDF 200mW 100mW DTM180AA DT-408 STD8018A LP05018 LS1012 DTM180AB

    BAT30-07P6FILM

    Abstract: BAT30 NV SOD MARKING CODE BAT30SFILM BAT30WFILM BAT30AFILM BAT30CFILM BAT30CWFILM BAT30FILM BAT30JFILM
    Text: BAT30 Small signal Schottky diodes Features BAT30JFILM Single • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ Extremely fast switching ■ Surface mount device ■ Low capacitance diode SOD-323


    Original     		PDF BAT30 BAT30JFILM OD-323 BAT30KFILM OD-523 BAT30LFILM OD-923 BAT30 OD-323, OD-523, BAT30-07P6FILM NV SOD MARKING CODE BAT30SFILM BAT30WFILM BAT30AFILM BAT30CFILM BAT30CWFILM BAT30FILM BAT30JFILM

    Untitled

    Abstract: No abstract text available
    Text: BAT30 Small signal Schottky diodes Features BAT30JFILM Single • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ Extremely fast switching ■ Surface mount device ■ Low capacitance diode SOD-323


    Original     		PDF BAT30 BAT30JFILM OD-323 BAT30KFILM OD-523 BAT30LFILM OD-923 BAT30 OD-323, OD-523,

    OE00

    Abstract: QS34XST253
    Text: QS34XST253 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS SynchroSwitchTM 32:8 Mux/Demux With Active Terminators QS34XST253 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional signal flow


    Original     		PDF QS34XST253 80-pin QS34XST253 MDSL-00213-00 OE00

    IDTQS34XVH245

    Abstract: QS34XVH245
    Text: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to VCC


    Original     		PDF IDTQS34XVH245 32-BIT 500MHz 10MHz; 80-Pin 34XVH245 IDTQS34XVH245 QS34XVH245

    IDTQS34XVH2245

    Abstract: QS34XVH2245 B12 nec diode
    Text: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH2245 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to VCC


    Original     		PDF IDTQS34XVH2245 32-BIT 10MHz; 80-Pin 34XVH2245 IDTQS34XVH2245 QS34XVH2245 B12 nec diode

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23

    A3054

    Abstract: MA3036 MA3046 UA3026HM FAIRCHILD 02L 6 "transistor arrays" ic C3086
    Text: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L DESCRIPTION — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed


    OCR Scan     		PDF jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 A3054 MA3046 UA3026HM FAIRCHILD 02L 6 "transistor arrays" ic C3086

    A3018

    Abstract: MONOLITHIC DIODE ARRAYS A3054 MA3036 MA3046 UA3026HM 6 "transistor arrays" ic darlington pair power transistor transistor 1354 SS126
    Text: MA3018 • JA3018A •pA3019 •mA3026 •pA3036 MA3039 •|jA3045 •pA3046 •\i A3054 •mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E SC R IP TIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed


    OCR Scan     		PDF jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 A3018 MONOLITHIC DIODE ARRAYS A3054 MA3046 UA3026HM 6 "transistor arrays" ic darlington pair power transistor transistor 1354 SS126

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


    OCR Scan     		PDF

    transistor BC 667

    Abstract: bc 301 transistor A3026 transistor bc 325 two transistor forward differential pair cascode la3026 transistor differential amplifier MONOLITHIC DIODE ARRAYS MA3036
    Text: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS FA IR CH ILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed


    OCR Scan     		PDF jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 transistor BC 667 bc 301 transistor A3026 transistor bc 325 two transistor forward differential pair cascode la3026 transistor differential amplifier MONOLITHIC DIODE ARRAYS

    MONOLITHIC DIODE ARRAYS fairchild

    Abstract: MA3046 vp2l DIODE IR 1F A3054 MA3036 UA3026HM MONOLITHIC DIODE ARRAYS
    Text: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS F A IR C H IL D LINEAR INTEGRATED C IR CU ITS G E N E R A L D E SC R IP TIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed


    OCR Scan     		PDF jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 MONOLITHIC DIODE ARRAYS fairchild MA3046 vp2l DIODE IR 1F A3054 UA3026HM MONOLITHIC DIODE ARRAYS

    MONOLITHIC DIODE ARRAYS fairchild

    Abstract: A3019 pa3026 PA3019 pa3046 jA3018 diode 5D A3019HM A3054 MA3036
    Text: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS F A IR C H IL D LINEAR INTEGRATED C IR CU ITS G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed


    OCR Scan     		PDF jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 MONOLITHIC DIODE ARRAYS fairchild A3019 pa3026 PA3019 pa3046 jA3018 diode 5D A3019HM A3054

    phonograph preamplifiers

    Abstract: differential pair cascode darlington fua 3046 dc uA3045 MA3026 MONOLITHIC DIODE ARRAYS fairchild uA3046 darlington pair transistor cd 3054 LA3026
    Text: |jA3018 •MA3018A. [i A3019 •mA3026 •mA3036 MA3039 • JA3045 •mA3046 •mA3054 •mA3086 TRANSISTOR AND DIODE ARRAYS F A IR C H IL D L IN E A R IN T E G R A T E D C IR C U IT S G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode A rrays consist o f general purpose integrated circuit devices constructed


    OCR Scan     		PDF jA3018 MA3018A. A3019 MA3026 MA3036 MA3039 JA3045 mA3046 MA3054 MA3086 phonograph preamplifiers differential pair cascode darlington fua 3046 dc uA3045 MA3026 MONOLITHIC DIODE ARRAYS fairchild uA3046 darlington pair transistor cd 3054 LA3026

    Untitled

    Abstract: No abstract text available
    Text: STTA306B TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS 3 I f a v 600 V V rrm trr 20 ns (typ) V f (max) A 1.65 V FEATURES AND BENEFITS • SPECIFICTO ’’FREEWH EEL MODE” OPERATIONS: FREEWHEEL OR BOOSTER DIODE ■ ULTRA-FAST, AND SOFT RECOVERY


    OCR Scan     		PDF STTA306B

    DARLINGTON TRANSISTOR ARRAY

    Abstract: No abstract text available
    Text: MA3018•MA3018A•MA3019•MA3026•MA3036 MA3039•HA3045•nA3046•mA3054•mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D ES C R IP T IO N — Fairch ild Transistor and Diode A rrays consist o f general purpose integrated circu it devices constructed


    OCR Scan     		PDF MA3018â MA3018Aâ MA3019â MA3026â MA3036 MA3039â HA3045â nA3046â mA3054â mA3086 DARLINGTON TRANSISTOR ARRAY

    A3006

    Abstract: a3006p STTA 12 stta 50 a diode 600v high 3006
    Text: fZ T SGS-THOMSON ^ 7 # M C ^ < m iO T s M K S T T A 3 0 0 6 P(I TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 30A V rrm 600V trr (typ) 35ns Vf 1.5V (max) FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode.


    OCR Scan     		PDF