DIODE A46
Abstract: A47 diode skkh570 4092 thyristor skkt 90 A76A semipack skkh 106 SKKD380 A36 diode semipack skkt 330
Text: 1996-2012:QuarkCatalogTempNew 9/20/12 3:44 PM Page 1996 INTERCONNECT TEST & MEASUREMENT 25 SEMIPACK Isolated Diode/Diode and Thyristor/Diode Modules SEMIPACK® Isolated Diode/Diode and Single Diode Modules 27 Amp to 700 Amp RoHS SKKD 46/16 Stock No. Mfr.’s
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zener diode A36
Abstract: zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener ZENER A34 CAZ23C24 a59 zener diode ZENER A26
Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ23C2V7 – CAZ23C51 Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)
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CAZ23C2V7
CAZ23C51
OT-23
MIL-STD-202,
J-STD-020C
CAZ23CXVX
zener diode A36
zener diode A29
ZENER A29
a37 zener
diode ZENER A26
a36 zener
ZENER A34
CAZ23C24
a59 zener diode
ZENER A26
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zener diode A29
Abstract: ZENER A29 a37 zener a23 zener zener diode A36 diode ZENER A26 A26 zener a36 zener marking codes A32 a59 zener diode
Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ59C2V7 – CAZ59C51 Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)
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CAZ59C2V7
CAZ59C51
SC-59
MIL-STD-202,
J-STD-020C
CAZ59CXVX
zener diode A29
ZENER A29
a37 zener
a23 zener
zener diode A36
diode ZENER A26
A26 zener
a36 zener
marking codes A32
a59 zener diode
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SCHOTTKY 20A 40V
Abstract: a465
Text: YG805C04R 40V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2
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YG805C04R
O-22OF15)
13Min
SC-67
SCHOTTKY 20A 40V
a465
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yg805c06
Abstract: YG805C06R IO120
Text: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2
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YG805C06R
O-22OF15)
13Min
SC-67
yg805c06
YG805C06R
IO120
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Untitled
Abstract: No abstract text available
Text: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2
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YG805C06R
O-22OF15)
13Min
SC-67
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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j10016
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J10015 M J10016 SWITCHMODE Series NPN Silicon Power Darlington TVansistors w ith B ase-Em itter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high-voltage,
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MJ10015
MJ10016
j10016
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10IOA
Abstract: P151 T151 T460 T930 TS802C06 SS003 ior P151
Text: TS802C06 ioa '> a y h + - / < '; 7 '^ V + - K SCHOTTKY BARRIER DIODE : Features • S IE ft£ * < T O Surface mount device • 1&VF Low VF Super high speed switching. Connection Diagram High reliability by planer design • £ i & : Applications High speed power sw itching.
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TS802C06
500ns,
l95t/R89
10IOA
P151
T151
T460
T930
SS003
ior P151
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TF5G
Abstract: H R C M F 2J ir1f ESAC61-004 SC-65
Text: E S A C 6 1 - 0 4 1 2 A ’ Outline Drawings SCHOTTKY BARRIER DIODE : Features • i&vF JEDEC Low VF • X -f EIAJ SC-65 X tT - K tf # * « * .' Super high speed switching. Connection Diagram High reliability by planer design : Applications High speed power switching.
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AC61-004
SC-65
500ns
TF5G
H R C M F 2J
ir1f
ESAC61-004
SC-65
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TS802C06
Abstract: No abstract text available
Text: TS802C06 ioa : Outline Drawings '> 3 SCHOTTKY BARRIER DIODE : Features Surface mount device JEDEC EIAJ ’ Low VF Super high speed switching. • f v —r - m m c • U S t ifc j s s s iu s t t Connection Diagram High reliability by planer design . rT^ : Applications
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TS802C06
500ns,
Q00L444
TS802C06
0QQb445
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE SQP400AA120 S Q D 4 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for
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SQP400AA120
a400A
00020m
SQD400AA120
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TS802C09
Abstract: Collmer SC
Text: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' •w s& s* Connection Diagram Super high speed switching. • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications
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TS802C09
500ns,
TS802C09(
Collmer SC
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KE 10A DIODE
Abstract: No abstract text available
Text: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' Super high speed switching. •w s& s* Connection Diagram • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications
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TS802C09<
500ns,
I95t/R89)
KE 10A DIODE
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a467
Abstract: TS802C09 ts802c PUAR
Text: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' Super high speed switching. •w s& s* Connection Diagram • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications
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TS802C09
500ns,
TS802C09(
a467
ts802c
PUAR
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802C06
Abstract: No abstract text available
Text: T S 802C 06 ioa '> a y h+ — * < U T ¥ 4 # — K SCHOTTKY BARRIER DIODE I Features Surface mount device • teVF Low V f • 7 .4 "J? > V * . M - KA * # * C iS I ' Super high speed switching. m nu&m Connection Diagram High reliability by planer design.
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--500ns,
TS802C06
TS802C06I10A)
802C06
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30S3
Abstract: AH20 T151 TS802C04 TS802
Text: TS802C04 ioa SCHOTTKY BARRIER DIODE I Features m Surface m ount device. • t e VF Low V f Connection Diagram Super high speed sw itch in g . • T V - * - * S 1± High reliability by planer d e s ig n , I Applications High speed pow er s w itc h in g .
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TS802C04
500ns,
A23Tg30Â
AfflTi30Â
I95t/R89)
Shl50
30S3
AH20
T151
TS802
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ESAC61-004
Abstract: SC-65 a469 esac61 SCHOTTKY -004
Text: E S A 6 C 1 - 4 i 2 A SCH O TTKY BARRIER DIODE ^ Features 1&VF Low V f * 4 " /T X V -V ic & i' Super high speed switching. im t t t Connection Diagram SH4 High reliability by planer design : Applications High speed power switching. M axim um Ratings and Characteristics
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ESAC61-004
SC-65
500ns
ESAC61
SC-65
a469
SCHOTTKY -004
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erc12 diode
Abstract: marking A7 ERC12 DIODE A46 marking A46 general purpose diode marking code -06 general purpose diode marking code -08
Text: ERC12 i.2A I Outline D raw ings - M t M m m ? * * - k _ GEN ERAL USE R EC TIFIER DIODE -w¿3 5. — 28MIN — /Q 8 20MIN — : Features • •0— Hi gh surge current • 'JV£ M $ A • f f if flfit t ■ S /jv i Marking Compact size, lightweight
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ERC12
28MIN
erc12 diode
marking A7
DIODE A46
marking A46
general purpose diode marking code -06
general purpose diode marking code -08
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diode ars1
Abstract: IR151
Text: TS802C04 ioa SCHOTTKY BARRIER DIODE • 4 $ £ : Features Surface m ount device. • 1& V f Low V f • wt 7A"J*>9X t r - * (=& i ' Connection Diagram Super high speed sw itchin g. • TV— *H± High reliability by planer design, : Applications High speed pow er s w itc h in g .
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TS802C04(
500ns,
I95t/R89
diode ars1
IR151
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A461
Abstract: TS802C04
Text: TS802C04 ioa SCHOTTKY BARRIER DIODE • 4 $ £ : Features Surface m ount device. • 1& V f Low V f • wt 7A"J*>9X t r - * (=& i ' Connection Diagram Super high speed sw itchin g. • TV— *H± High reliability by planer design, : Applications High speed pow er s w itc h in g .
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TS802C04
500ns,
A461
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a461
Abstract: TS802C04
Text: TS802C04 ioa SCHOTTKY BARRIER DIODE • 4 $ £ : Features Surface m ount device. • 1& V f Low V f • wt 7A"J*>9X t r - * (=& i ' Connection Diagram Super high speed sw itchin g. • TV— *H± High reliability by planer design, : Applications High speed pow er s w itc h in g .
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TS802C04
500ns,
a461
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Ry110
Abstract: diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717
Text: D 94D 0 0 0 1 3 2 5 7 8 2 5 2 CUSTOM COMPONENTS INC 7 " - o / - o ^ Ë F | 2 5 7 f l E S S D0DDD13 4 Custom Components, Inc. Box SSUt Lebanon, AT. J. 088SS 201 534-6151 TUNNEL DIODE CROSS REFERENCE GENERAL ELECTRIC AERTECH AERTECH # C C I# AERTECH # CCI #
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QD0D013
534-61S1
A1D207A
A1D207E
A1E207A
A1E207E
A1A210D
A1A210E
A1B210D
A1B210E
Ry110
diode cross reference
RY104
a2305
RY115
MICROWAVE ASSOCIATES
IN3716
diode ry24
RY101
1N3717
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A461
Abstract: No abstract text available
Text: TS802C04 ioa '> a 'y h + —*'< l) T ÿ ' i J r — K SCHOTTKY BARRIER DIODE • J& S : : Features • mm Surface m ount device. • flSV F Low V f • T A 'y + 's V * I f - FA"'# $ ' C onnection D iagram Super high speed sw itchin g. • 7V —j — iiffilciSigff
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TS802C04(
500ns,
A461
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