thyristor control arc welding rectifier circuit
Abstract: 400 amp SCR used for welding rectifier welding transformer SCR ABB thyristor modules PN5-10DA 400 amp thyristor used for welding rectifier MDS100 three phase triac control arc welder inverter 3KW INDUCTION HEATING POWER SUPPLY
Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing solid state relays, thyristor modules, diode modules, thyristor diode modules, fast recovery diode, single phase & three phase bridge rectifier and press fit diodes etc. along with about 150
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ISO9001
DXC-614Heatsink
thyristor control arc welding rectifier circuit
400 amp SCR used for welding rectifier
welding transformer SCR
ABB thyristor modules
PN5-10DA
400 amp thyristor used for welding rectifier
MDS100
three phase triac control
arc welder inverter
3KW INDUCTION HEATING POWER SUPPLY
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pin diodes radiation detector
Abstract: d2 diode series Microwave PIN diode DIODE RF DETECTOR PIN DIODE DRIVER CIRCUITS uhf circulator PIN DIODE SPDT DRIVER CIRCUITS HIGH POWER ANTENNA SWITCH PIN DIODE PIN DIODE pin diode limiter
Text: Application note Design With PIN Diodes The PIN diode finds wide usage in RF, UHF and microwave circuits. It is fundamentally a device whose impedance, at these frequencies, is controlled by its DC excitation. A unique feature of the PIN diode is its ability to control large amounts of RF power
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S8 MARKING ON SOT23 PACKAGE
Abstract: Diode SOT-23 marking s8 DBS SOT23 MARKING CODE marking code js 3 pin diode diode MARKING CODE 930 diode 1504 JS marking diode marking s8 diode Js MARKING CODE SOT23 TA 1504
Text: BAT 15-04 Silicon Dual Schottky Diode ● ● ● DBS mixer applications to 12 GHz Low noise figure Low barrier type Type Ordering Code tape and reel Pin Configuration Marking 1 2 3 Package BAT 15-04 Q62702-A504 A SOT-23 – C S8 Maximum Ratings Parameter
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Q62702-A504
OT-23
S8 MARKING ON SOT23 PACKAGE
Diode SOT-23 marking s8
DBS SOT23 MARKING CODE
marking code js 3 pin diode
diode MARKING CODE 930
diode 1504
JS marking diode
marking s8 diode
Js MARKING CODE SOT23
TA 1504
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A777
Abstract: sot-23 a777 Q62702-A776 DIODE BAT sot-23 marking code Q62702-A504 Q62702-A775 Q62702-A777 MARKING 54 "Pin Diode"
Text: BAT 17… Silicon Schottky Diode ● ● For mixer applications in the VHF/UHF range For high-speed switching Type Ordering Code tape and reel Pin Configuration Marking 1 2 3 BAT 17 BAT 17-04 BAT 17-05 BAT 17-06 Q62702-A504 Q62702-A775 Q62702-A776 Q62702-A777
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Q62702-A504
Q62702-A775
Q62702-A776
Q62702-A777
OT-23
A777
sot-23 a777
Q62702-A776
DIODE BAT
sot-23 marking code
Q62702-A504
Q62702-A775
Q62702-A777
MARKING 54 "Pin Diode"
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DIODE BAT 17
Abstract: A777 DIODE BAT Q62702-A777 Q62702-A504 Q62702-A775 Q62702-A776 MARKING 54 "Pin Diode" cu marking code diode Q62702-A77
Text: BAT 17… Silicon Schottky Diode ● ● For mixer applications in the VHF/UHF range For high-speed switching Type Ordering Code tape and reel Pin Configuration Marking 1 2 3 BAT 17 BAT 17-04 BAT 17-05 BAT 17-06 Q62702-A504 Q62702-A775 Q62702-A776 Q62702-A777
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Q62702-A504
Q62702-A775
Q62702-A776
Q62702-A777
OT-23
DIODE BAT 17
A777
DIODE BAT
Q62702-A777
Q62702-A504
Q62702-A775
Q62702-A776
MARKING 54 "Pin Diode"
cu marking code diode
Q62702-A77
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
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sc5 s dc 6v relay
Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997
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Corpora1-504-2860
X10679EJEV0SG00
sc5 s dc 6v relay
P48D-70-600
UPD66010
UPD7752
AC03E
uPD7520
uPA1601
UPD70208H
uPD72020
uPD16503
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zener diode A36
Abstract: zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener ZENER A34 CAZ23C24 a59 zener diode ZENER A26
Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ23C2V7 – CAZ23C51 Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)
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CAZ23C2V7
CAZ23C51
OT-23
MIL-STD-202,
J-STD-020C
CAZ23CXVX
zener diode A36
zener diode A29
ZENER A29
a37 zener
diode ZENER A26
a36 zener
ZENER A34
CAZ23C24
a59 zener diode
ZENER A26
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zener diode A29
Abstract: ZENER A29 a37 zener a23 zener zener diode A36 diode ZENER A26 A26 zener a36 zener marking codes A32 a59 zener diode
Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ59C2V7 – CAZ59C51 Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)
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CAZ59C2V7
CAZ59C51
SC-59
MIL-STD-202,
J-STD-020C
CAZ59CXVX
zener diode A29
ZENER A29
a37 zener
a23 zener
zener diode A36
diode ZENER A26
A26 zener
a36 zener
marking codes A32
a59 zener diode
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IN5827
Abstract: IN5826 1N5826 1N5827 1N5828
Text: 1N5826 1N5827 1N5828 ‘0 HOT CARRIER POWER RECTIFIER .,. employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage,
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1N5826
1N5827
1N5828
L1lHO861603
a5036
DS-6077
IN5827
IN5826
1N5826
1N5827
1N5828
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1M5378B
Abstract: No abstract text available
Text: SEtllTRON INDUSTRIES LTD 43E » • 613760^ 0000161 1 « S L C B IN5333-IN5388 series High Power Zener Diode Voltage Range 3V3 to 200 Volts 5.0 Watt Steady State FEATURES ■ High power regulator diode ■ High surge capabilities ■ 100% Tested ■ -65°C to +200°C
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IN5333-IN5388
DO-35
DO-41
DO-15
DO-201AD
1M5378B
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cl6d
Abstract: No abstract text available
Text: M GE D FASCO 3 4 clci73ô 0QQ105S INDS/ b E 3 SENI SENISYS CLED1 CLED1A CLED1B CLED1C ± .0 0 5 -.210 DIA± .0 0 7 -.183 DIAWINDOW ±.011 .147 OIA Gallium Arsenide Infrared Emitting Diode ±.010 .200 GENERAL DESCRIPTION — The Clairex CLED1 is a Gallium Arsenide infrared emitting diode in a lensed
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34RT73Ã
0QQ105S
100mA
1009080S
302010-O-
If350
cl6d
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Dual Schottky Diode BAT 15-04 Features • DBS mixer applications to 12 GHz • Low noise figure • Low barrier type 5:1 Type Ordering Code ' tape and reel BAT 15-04 Pin Configuration 1 2 Marking Package S8 SOT-23 3 | Q62702-A504 Maximum Ratings
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Q62702-A504
OT-23
EHD07082
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Q62702-A777
Abstract: No abstract text available
Text: SIEM ENS Silicon Schottky Diode BAT 17. • For mixer applications in the VHF/UHF range • For high-speed switching Type BAT BAT BAT BAT 17 17-04 17-05 17-06 Ordering Code tape and reel Pin Configuration Marking 1 2 3 Package Q62702-A504 Q62702-A775 Q62702-A776
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Q62702-A504
Q62702-A775
Q62702-A776
Q62702-A777
OT-23
EH007I08
Q62702-A777
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BY 255 diode
Abstract: diode 77 radial lead IDL41 IN3501
Text: SEMITRON INDUSTRIES LTD 43E D H 013700«? 000017^ 0 B S L C B SERIES Temperature Compensated Diode 6V35 Volts Ultra Stable APPLICATIONS Semitron Certified Semiconductor Reference Diodes are intended for use as a robust and reliable standard voltage. They can replace
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DO-35
DO-35
DO-41
DO-15
DO-201AD
BY 255 diode
diode 77 radial lead
IDL41
IN3501
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Untitled
Abstract: No abstract text available
Text: 43E T> SEMITRON INDUSTRIES LTD 013760*1 D000177 7 BISLCB IN4890-4895A series Temperature Compensated Diode 6V35 Volts Ultra Stable APPLICATIONS GLASS D07 • This series of Semitron 400 mW Ultra-Stable Reference Diodes offers a CERTIFIED REFERENCE VOLTAGE STABILITY as measured
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D000177
IN4890-4895A
PPM/1000
DO-35
DO-41
DO-15
DO-201AD
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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MG15G6EM1
Abstract: No abstract text available
Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG15G6EM1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 6 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance
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MG15G6EM1
MG15G6EM1
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Untitled
Abstract: No abstract text available
Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG50G2DM1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance
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MG50G2DM1
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Philips fr 153 30
Abstract: No abstract text available
Text: • bbS3T31 ODEMST? TOT « A P X N AUER PHILIPS/DISCRETE b7E ]> BAS56 J V SILICON PLANAR EPITAXIAL ULTRA-HIGH SPEED DIODE The BAS56 consists of two separate planar epitaxial ultra-high speed, high conductance diodes in one microminiature plastic envelope intended for surface mounting.
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bbS3T31
BAS56
BAS56
1Z73J12
BAW62
Philips fr 153 30
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Untitled
Abstract: No abstract text available
Text: SEMITRON INDUSTRIES LTD H3E D • fliaTflftR 000015R S B S L C B BZY9IIZ6 S E R I E S Hermetically Sealed Packaged ■Voltage Regulator Diode Released to BS9305-F081 ■Voltage Range 3V6 to 200 Volts 75 Watt Steady State ■ 5000 Watt Peak Power APPLICATIONS
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000015R
BS9305-F081
9305-F-081
IN3305
IN3340
IN3341
IN3350
DO-35
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Untitled
Abstract: No abstract text available
Text: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS
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00Q01t
9305-F-078
DO-35
DO-41
DO-15
DO-201AD
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BZY95C12
Abstract: in152 BZY95-C12 BZY95-C51 BZY95C22 BZY96C5V1 BZY96C6V2 BZY96-C6V8 BZY95-C24 BZY95C24
Text: SEMITRON INDUSTRIES LT» 43E D • &137 &&^ OOOOISI O B S L C B BZY9S/BZY96/Z2 SERIES Hermetically Sealed Metal Package ■Voltage Regulator Diode Released to BS/CECC 9305-F082 ■Voltage Range 3.0 to 400 Volts 1.5 Watt Steady State ■400 Watt Peak Power
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BZY9S/BZY96/Z2
9305-F082
9305-F-082
DO-35
DO-35
DO-41
DO-15
DO-201AD
BZY95C12
in152
BZY95-C12
BZY95-C51
BZY95C22
BZY96C5V1
BZY96C6V2
BZY96-C6V8
BZY95-C24
BZY95C24
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z0b07
Abstract: Z4618 z4843
Text: SEMITRON INDUSTRIES LTD M3E » • aiaîsas DDQOISS 8 H S L C B Z0/Z4 SERIES Hermetically Sealed Package ■Voltage Regulator Diode Released to BS 9305-F078 3 - 200 Volts ■Voltage Range 3VO to 400 Volts 1 Watt Steady State ■400 Watt Peak Power APPLICATIONS
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9305-F078
9305-F-078
DO-35
DO-41
DO-15
DO-201AD
z0b07
Z4618
z4843
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