IXGA30N60C3C1
Abstract: IXGH30N60C3C1 IXGP30N60C3C1 30N60C3
Text: IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings
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IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
IC110
100kHz
O-263
IF110
O-220AB
O-247
IXGH30N60C3C1
30N60C3
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings
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IC110
IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
O-263
100kHz
O-220AB
IF110
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IXFP10N80P
Abstract: 10N80P IXFH10N80P IXFA10N80P IXFQ10N80P IXFH10N80 10n80 MOSFET 800V 10A TO-3P IXFP10N80
Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA IXFA IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P VDSS ID25 TO-220AB (IXFP) TO-3P (IXFQ) RDS(on) trr G G D S S G D (TAB) DS D (TAB) Symbol Test Conditions
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IXFA10N80P
IXFP10N80P
IXFQ10N80P
IXFH10N80P
O-220AB
O-263
250ns
O-247
IXFP10N80P
10N80P
IXFH10N80P
IXFA10N80P
IXFQ10N80P
IXFH10N80
10n80
MOSFET 800V 10A TO-3P
IXFP10N80
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA IXFA IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P VDSS ID25 TO-220AB (IXFP) TO-3P (IXFQ) RDS(on) trr G G D S S G D (TAB) DS = 800V = 10A Ω ≤ 1.1Ω
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IXFA10N80P
IXFP10N80P
IXFQ10N80P
IXFH10N80P
O-220AB
O-263
250ns
O-247
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IXTH460P2
Abstract: Ixtq460p2 ixtq460 460P2 IXTP460P2 IXTQ 460p2 IXTA460P2 IXTQ ixtq460p to-247 to-220 to-3p
Text: IXTA460P2 IXTP460P2 IXTQ460P2 IXTH460P2 PolarP2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 RDS on trr(typ) TO-220AB (IXTP) TO-263 AA (IXTA) G D (Tab) G D DS S D (Tab) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C
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IXTA460P2
IXTP460P2
IXTQ460P2
IXTH460P2
O-220AB
O-263
400ns
IXTA460P2
IXTQ460P2
IXTH460P2
ixtq460
460P2
IXTP460P2
IXTQ 460p2
IXTQ
ixtq460p
to-247 to-220 to-3p
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460P2
Abstract: No abstract text available
Text: PolarP2TM Power MOSFET VDSS ID25 IXTA460P2 IXTP460P2 IXTQ460P2 IXTH460P2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode RDS on trr(typ) TO-220AB (IXTP) TO-263 AA (IXTA) G D (Tab) G D DS S D (Tab) D (Tab) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C
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IXTA460P2
IXTP460P2
IXTQ460P2
IXTH460P2
O-220AB
O-263
400ns
IXTA460P2
IXTQ460P2
460P2
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PSKT 94
Abstract: HIGH VOLTAGE THYRISTOR PSKT94
Text: ITRMS I TAVM VRRM PSKT94 /PSKH 94 High Voltage Thyristor Module High Voltage Thyristor/Diode Modules TO-240 AA 1 Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 2100 2300 2000 2200 ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C; VR = 0 180 104
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PSKT94
O-240
94/20io1
94/20io1
94/22io1
94/22io1
PSKT 94
HIGH VOLTAGE THYRISTOR
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PSKD 72
Abstract: 72 diode
Text: PSKD 72 Diode Modules IFRMS IFAVM VRRM Preliminary Data Sheet VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Symbol IFRMS IFAVM IFSM ∫i2dt Type 3 1 TO-240 AA 2 1 Test Conditions TVJ = TVJM TC = 92°C; 180° sine TC = 100°C; 180° sine Maximum Ratings
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O-240
PSKD 72
72 diode
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HIGH VOLTAGE THYRISTOR
Abstract: THYRISTOR MODULE IXYS MCC 94 94-22io1B
Text: MCC 94 MCD 94 High Voltage Thyristor Module High Voltage Thyristor/Diode Modules VRSM VDSM VRRM VDRM V V 2100 2300 2000 2200 TO-240 AA Type MCC 94-20io1 B MCC 94-22io1 B ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C; VR = 0 dv/dt cr PGM Maximum Ratings
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O-240
94-20io1
94-22io1
HIGH VOLTAGE THYRISTOR
THYRISTOR MODULE IXYS MCC 94
94-22io1B
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ixys mcc 132 12
Abstract: HIGH VOLTAGE THYRISTOR THYRISTOR MODULE IXYS MCC 94 94-22io1 94-22io1B ixys MCC 90
Text: MCC 94 MCD 94 High Voltage Thyristor Module High Voltage Thyristor/Diode Modules VRSM VDSM VRRM VDRM V V 2100 2300 2000 2200 TO-240 AA Type MCC 94-20io1 B MCC 94-22io1 B ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C; VR = 0 dv/dt cr PGM Maximum Ratings
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O-240
94-20io1
94-22io1
ixys mcc 132 12
HIGH VOLTAGE THYRISTOR
THYRISTOR MODULE IXYS MCC 94
94-22io1B
ixys MCC 90
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Untitled
Abstract: No abstract text available
Text: MCC 94 MCD 94 High Voltage Thyristor Module High Voltage Thyristor/Diode Modules VRSM VDSM VRRM VDRM V V 2100 2300 2000 2200 TO-240 AA Type MCC 94-20io1 B MCC 94-22io1 B ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C; VR = 0 dv/dt cr Maximum Ratings
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O-240
94-20io1
94-22io1
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US10024
Abstract: 56-16N1 56-16N1B TO-240AA-1 DIODE 22-35 L
Text: Diode Modules VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type MDD 56 IFRMS = 2 x 150 A IFAVM = 2 x 95 A VRRM = 800 - 1800 V 3 TO-240 AA 1 2 1 MDD 56-08N1 B MDD 56-12N1 B MDD 56-14N1 B MDD 56-16N1 B MDD 56-18N1 B Symbol IFRMS IFAVM Test Conditions
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O-240
56-08N1
56-12N1
56-14N1
56-16N1
56-18N1
US10024
56-16N1B
TO-240AA-1
DIODE 22-35 L
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ixys mdd
Abstract: 72 diode diode aa 90 DIODE RECTIFIER BRIDGE IXYS
Text: MDD 72 Diode Modules VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 3 Type 1 2 Conditions IFRMS IFAVM TVJ = TVJM TC = 92°C; 180° sine TC = 100°C; 180° sine IFSM TVJ = 45°C; VR = 0 Maximum Ratings 180 113 99 A A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz)
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0-1800V
72-08N1B
72-12N1B
72-14N1B
72-16N1B
72-18N1B
O-240
20100203a
ixys mdd
72 diode
diode aa 90
DIODE RECTIFIER BRIDGE IXYS
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Untitled
Abstract: No abstract text available
Text: MDD 72 IFRMS = 2x 180 A IFAVM = 2x 113 A VRRM = 800-1800 V Diode Modules VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 3 Type 2 2 MDD 72-08N1B MDD 72-12N1B MDD 72-14N1B MDD 72-16N1B MDD 72-18N1B Conditions IFRMS IFAVM TVJ = TVJM TC = 92°C; 180° sine
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72-08N1B
72-12N1B
72-14N1B
72-16N1B
72-18N1B
O-240
20100203a
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72-16N1
Abstract: diode aa 113 DIODE 22-35 L
Text: Diode Modules MDD 72 IFRMS = 2 x 180 A IFAVM = 2 x 113 A VRRM = 800 - 1800 V VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 3 Type 1 2 2 1 MDD 72-08N1 B MDD 72-12N1 B MDD 72-14N1 B MDD 72-16N1 B MDD 72-18N1 B Symbol IFRMS IFAVM Test Conditions
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72-08N1
72-12N1
72-14N1
72-16N1
72-18N1
diode aa 113
DIODE 22-35 L
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Untitled
Abstract: No abstract text available
Text: WESTCODE SEMICONDUCTORS Diode Modules VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 IFRMS = 2 x 180 A IFAVM = 2 x 113 A VRRM = 800 - 1800 V 3 Type 1 2 2 1 WPD 72-08 WPD 72-12 WPD 72-14 WPD 72-16 WPD 72-18 Symbol IFRMS IFAVM Test Conditions
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diode aa113
Abstract: AA113 germanium point contact diode Germanium Diode aa113 AA113 DO-7 point contact diode diode germanium AA113 AA113 diode diode tfk aa113 "Point Contact Diode"
Text: Hr AA 113 Germanium-Spitzendiode Germanium point contact diode Anwendungen: Hochohmige Demodulatorschaltungen. Als Diodenpaar für Diskriminator- und Ratiodetektorschaltungen. Applications: High impedance demodulator circuits. Matched pairs for discriminator and ratio detector
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AA113
diode aa113
AA113
germanium point contact diode
Germanium Diode aa113
AA113 DO-7
point contact diode
diode germanium AA113
AA113 diode
diode tfk aa113
"Point Contact Diode"
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diode aa113
Abstract: germanium rectifier diode Germanium rectifier BA diode diode aa 90 diode ba 104 germanium-diodes germanium "RF diode" silicon diode and germanium
Text: Inventory o f discrete standard Types 9.2. Germanium-diodes Type Application AA 113 1 HF-diode Reverse voltage Forward voltage l/F at / F = 10 mA Reverse current /„ at l/R= 1 0 V V) (V) (HA) 60 20 1.1 (< 1.6) 12 A A 1 1 6 1) HF-dicide <1 .0 20 AA 117 A A 1 1 8 1)
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TO-268
Abstract: 25-16AR isoplus ixys mounting Phase-leg Rectifier Diode B.Sc data
Text: Phase-leg Rectifier Diode VBSM VRRM V V 1300 1700 1200 1600 TO-247 AD vRRM = 1200/16 0 0 V *f rms = 2 x 43 a 1f(av)m= 2 x28 A TO-268 AA ISOPLUS 247 Type DSP 25-12A DSP 25-16A DSP 25-12AT DSP 25-16AT 1r * T' 1 2 • + *— 1 I TO-247 AD TO-268 AA Version A
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O-247
O-268
5-12A
5-16A
25-12AT
25-16AT
25-16AR
247TM
TO-268
25-16AR
isoplus ixys mounting
Phase-leg Rectifier Diode
B.Sc data
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820 nm laser diode
Abstract: PULSED LASER DIODE DRIVER peltier 75 watts CVD-190 CVD-192 CVD-193 CVD-90 CVD-93 CVD-95 CVD-97
Text: LASER DIODE INC 1EE D | S3aSTâS 0G004Ô7 4 | CVD - 90 SERIES LASERDIODE, INC._ T - W 'C s * THERMALLY STABLE M O C V D G aA lA s MULTIHETEROSTRUCTURE LASER DIODES FEATURES: y High Efficiency a t Low Drive Currents ^ Up to 100 Watts Peak Power O utput
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0G004Ã
870nm
820 nm laser diode
PULSED LASER DIODE DRIVER
peltier 75 watts
CVD-190
CVD-192
CVD-193
CVD-90
CVD-93
CVD-95
CVD-97
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transistor 3l2
Abstract: No abstract text available
Text: DATA SHEET PHOTOCOUPLER PS2533-1 ,-2,-4,PS2533L-1 ,-2,-4 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES DESCRIPTION T he P S 2533-1, -2, -4 and P S 2 533 L-1 , -2, -4 are o p tica lly c o u p le d iso lato rs con ta in in g a G aA s light em ittin g diode
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PS2533-1
PS2533L-1
transistor 3l2
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Untitled
Abstract: No abstract text available
Text: DATA SHEET PHOTOCOUPLER PS2532-1 ,-2r 4,PS2532L-1 ,-2,-4 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES DESCRIPTION T he P S 2532-1, -2, -4 and P S 2 532 L-1 , -2, -4 are o p tica lly c o u p le d iso lato rs con ta in in g a G aA s light em ittin g diode
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PS2532-1
PS2532L-1
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NEC diode ie3
Abstract: No abstract text available
Text: DATA SHEET NEC PHOTOCOUPLER PS2506-1 ,-2,-4, PS2506L-1 ,-2,-4 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES -NEPOC Series DESCRIPTION T h e P S 2 5 0 6 -1 , -2, -4 and P S 2 5 0 6 L -1 , -2, -4 are o p tica lly cou pled iso la to rs co n tain ing a G aA s light em ittin g diode
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PS2506-1
PS2506L-1
NEC diode ie3
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2502L1
Abstract: NEC PS2502
Text: DATA SHEET NEC PHOTOCOUPLER PS2502-1 ,-2,-4, PS2502L-1 ,-2,-4 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES -NEPOC Series DESCRIPTION T h e P S 2 5 0 2 -1 , -2, -4 and P S 2 5 0 2 L -1 , -2, -4 are o p tica lly cou pled iso la to rs co n tain ing a G aA s light em ittin g diode
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PS2502-1
PS2502L-1
2502L1
NEC PS2502
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