Untitled
Abstract: No abstract text available
Text: AON6812 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain
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AON6812
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Untitled
Abstract: No abstract text available
Text: AON6810 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain
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AON6810
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Untitled
Abstract: No abstract text available
Text: AON6810 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain
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AON6810
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Untitled
Abstract: No abstract text available
Text: AON6812 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain
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AON6812
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MCR-FL-C-UI-UI-DCI-24
Abstract: "Isolation Amplifier" 4-20ma CISPR22 Isolation amplifier
Text: Configurable 3-Way Isolation Amplifier With Long-Range Supply MCR-FL-C-UI-UI-DCI-24/230 • 3-way isolation • Safe isolation in accordance with EN 61 010 • Configurable inputs and outputs • Adjustable cut-off frequency <10 Hz / 10 kHz, approximately
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MCR-FL-C-UI-UI-DCI-24/230
MCR-FL-C-UI-UI-DCI-24
"Isolation Amplifier" 4-20ma
CISPR22
Isolation amplifier
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"Isolation Amplifier"
Abstract: MCR-FL-C-UI-UI-DCI-24 FL 3333 MCR-C-UI-UI CISPR22 AC DC power supply
Text: Configurable 3-Way Isolation Amplifier With Long-Range Supply MCR-FL-C-UI-UI-DCI-24/230 • 3-way isolation • Safe isolation in accordance with EN 61 010 • Configurable inputs and outputs • Adjustable cut-off frequency <10 Hz / 10 kHz, approximately
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MCR-FL-C-UI-UI-DCI-24/230
"Isolation Amplifier"
MCR-FL-C-UI-UI-DCI-24
FL 3333
MCR-C-UI-UI
CISPR22
AC DC power supply
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Untitled
Abstract: No abstract text available
Text: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
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AO6602
AO6602
100m1
170m1
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AO6602
Abstract: uis test
Text: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
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AO6602
AO6602
uis test
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AO4618
Abstract: No abstract text available
Text: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4618
AO4618
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Untitled
Abstract: No abstract text available
Text: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4618
AO4618
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Untitled
Abstract: No abstract text available
Text: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4618
AO4618
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ao4832
Abstract: No abstract text available
Text: AO4832 30V Dual N-Channel MOSFET General Description Product Summary The AO4832 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. ID (at VGS=10V)
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AO4832
AO4832
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AO4884
Abstract: No abstract text available
Text: AO4884 40V Dual N-Channel MOSFET General Description Product Summary The AO4884 uses advanced trench technology to provide excellent RDS ON with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications.
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AO4884
AO4884
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AO4884L
Abstract: No abstract text available
Text: AO4884L 40V Dual N-Channel MOSFET General Description Product Summary The AO4884L uses advanced trench technology to provide excellent RDS ON with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications.
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AO4884L
AO4884L
Junction-to-AmbO4884L
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Qg (nC)
Abstract: 70°C AO6810 diode AR S1 77 diode AR S1 70
Text: AO6810 30V Dual N-Channel MOSFET General Description Product Summary The AO6810 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V
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AO6810
AO6810
Qg (nC)
70°C
diode AR S1 77
diode AR S1 70
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M8402
Abstract: 041 DIODE
Text: S T M8402 S amHop Microelectronics C orp. P reliminary May.26 2004 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 6.2A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V
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M8402
M8402
041 DIODE
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M8306
Abstract: HR ONS diode ar s1
Text: S T M8306 Green Product S amHop Microelectronics C orp. Mar.06, 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (P -C hannel) P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m Ω ) Max V DS S
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M8306
M8306
HR ONS
diode ar s1
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mar-06
Abstract: STM8306 m8306 diode AR s1 52
Text: S T M8306 S amHop Microelectronics C orp. Mar.06, 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -6A
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M8306
mar-06
STM8306
m8306
diode AR s1 52
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AON6884L
Abstract: AON6884
Text: AON6884L 40V Dual N-Channel MOSFET General Description Product Summary The AON6884L uses advanced trench technology to provide excellent RDS ON with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications.
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AON6884L
AON6884L
ON6884L
AON6884
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Untitled
Abstract: No abstract text available
Text: AON6884 40V Dual N-Channel MOSFET General Description Product Summary The AON6884 uses advanced trench technology to provide excellent RDS ON with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications.
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AON6884
AON6884
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Untitled
Abstract: No abstract text available
Text: ZXM HC6A07T8 COM PLEM ENTARY 60V ENHANCEM ENT M ODE M OSFET H-BRIDGE SUM M ARY N-Channel V BR DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V (BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench M OSFETs from Zetex utilizes a unique
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HC6A07T8
REE52)
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AOD603A
Abstract: No abstract text available
Text: AOD603A 60V Complementary MOSFET General Description Product Summary The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AOD603A
AOD603A
O252-4L
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Untitled
Abstract: No abstract text available
Text: AOD603A 60V Complementary MOSFET General Description Product Summary The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AOD603A
AOD603A
115m1
150m1
88889ABC
11/D2
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SK 10 BAT 065
Abstract: 0/SK 10 BAT 065 20/SK 10 BAT 065
Text: A dvanced P o w er Te c h n o lo g y O D APT10M25BNR 100V APT10M30BNR 100V O s POWER MOS IV® 75A 0.025a 75A 0.030Ü AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd *DM VGS V GSM PD t j ,t stg All Ratings: Tc = 25°C unless otherwise specified.
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APT10M25BNR
APT10M30BNR
APT10M25BNR
APT10M30BNR
Opera00
O-247AD
G0G1415
SK 10 BAT 065
0/SK 10 BAT 065
20/SK 10 BAT 065
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