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    DIODE B2S Search Results

    DIODE B2S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE B2S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RB160-40

    Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
    Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148


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    CDSL4148 LL4148 PMLL4148 RLS4148 CDSF335 BAS16WS CDSF4148 1N4148WS RB160-40 KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11 PDF

    DI108S

    Abstract: SK5100 CP2506 sb5200 SB840
    Text: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose


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    38x45Â DI108S SK5100 CP2506 sb5200 SB840 PDF

    br 123 s

    Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
    Text: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital


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    O-252 O-277A O-277B MA/DO-214AC DO-214A MC/DO-214AB br 123 s BAS54A BR3005 MS15N50 sod-23 BAS54C PDF

    LL5817

    Abstract: smd ss12 DIODE SS34 LL5818 LL5819 SS13 SS14 SS15 SS16 SS19
    Text: SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers SUPER FAST RECOVERY DIODE Part CrossMax.Average Peak Peak Fwd Surge Max Forward Max. Reverse Max Reverse Package Number Reference Rect. Current Inverse Current @ 8.3ms Voltage @ Ta 25 C Current @ 25 C Recovery Time


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    C3B03 LL5817 smd ss12 DIODE SS34 LL5818 LL5819 SS13 SS14 SS15 SS16 SS19 PDF

    smd Marking OU

    Abstract: B05S-G B05S smd marking NE B10S B10SG
    Text: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features TO269AA MiniDIP -Rating to 1000V PRV. -Ideal for printed circuit board. 0.193 (4.90)


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    B05S-G B10S-G O269AA 125grams. QW-BBR01 smd Marking OU B05S smd marking NE B10S B10SG PDF

    Untitled

    Abstract: No abstract text available
    Text: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features MBS -Rating to 1000V PRV. -Ideal for printed circuit board. 0.031 0.80 0.019 (0.50)


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    B05S-G B10S-G 125grams. QW-BBR01 82MIN 032MIN 55REF 100REF 92MIN 036MIN PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD General Purpose Bridge Rectifier Diode B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features MBS -Rating to 1000V PRV. 0.031 0.80 0.019 (0.50) -Ideal for printed circuit board. + - -Reliable low cost construction utilizing


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    B05S-G B10S-G QW-BBR01 82MIN 032MIN 55REF 100REF 92MIN 036MIN 00MAX PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD General Purpose Bridge Rectifier Diode B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features MBS -Rating to 1000V PRV. 0.031 0.80 0.019 (0.50) -Ideal for printed circuit board. + - -Reliable low cost construction utilizing


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    B05S-G B10S-G QW-BBR01 82MIN 032MIN 55REF 100REF 92MIN 036MIN 00MAX PDF

    general purpose bridge rectifier

    Abstract: comchip rectifier bridge low smd diode bridge
    Text: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-HF Thru B10S-HF Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Halogen Free MBS Features -Rating to 1000V PRV. 0.031 0.80 0.019 (0.50) -Ideal for printed circuit board.


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    B05S-HF B10S-HF 125grams. QW-JBR03 82MIN 55REF 92MIN 00MAX 032MIN 100REF general purpose bridge rectifier comchip rectifier bridge low smd diode bridge PDF

    Untitled

    Abstract: No abstract text available
    Text: COMCHIP SMD Gen er al Purpose Bridge Rect ifier Diode SMD Diodes Specialist B01S-G B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features TO269AA MiniDIP -Rating to 1000V PRV. -Ideal for printed circuit board. 0.193 (4.90)


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    B01S-G B05S-G B10S-G O269AA 125grams. QW-BBR01 PDF

    DIODE B6S

    Abstract: B6S Bridge rectifier DIODE MARKING B4 TO-269AA diode marking b2 JESD22-B102D J-STD-002B
    Text: B2S, B4S & B6S New Product Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES • UL Recognition, file number E54214 • Saves space on printed circuit boards • Ideal for automated placement • Middle surge current capability


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    E54214 J-STD-020C, 2002/95/EC 2002/96/EC O-269AA 08-Apr-05 DIODE B6S B6S Bridge rectifier DIODE MARKING B4 TO-269AA diode marking b2 JESD22-B102D J-STD-002B PDF

    diode b2s

    Abstract: DIODE B6S
    Text: New Product B2S, B4S & B6S Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES • UL recognition, file number E54214 • Saves space on printed circuit boards • Ideal for automated placement • Middle surge current capability


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    E54214 J-STD-020, 2002/95/EC 2002/96/EC O-269AA 08-Apr-05 diode b2s DIODE B6S PDF

    DIODE B6S

    Abstract: diode b2s diode marking b2 JESD22-B102 J-STD-002 B6S Bridge rectifier
    Text: New Product B2S, B4S & B6S Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES • UL recognition, file number E54214 • Saves space on printed circuit boards • Ideal for automated placement • Middle surge current capability


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    E54214 J-STD-020, 2002/95/EC 2002/96/EC O-269AA 200lectual 18-Jul-08 DIODE B6S diode b2s diode marking b2 JESD22-B102 J-STD-002 B6S Bridge rectifier PDF

    Untitled

    Abstract: No abstract text available
    Text: B2S, B4S, B6S www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES ~ • UL recognition, file number E54214 • Saves space on printed circuit boards ~ • Ideal for automated placement


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    E54214 J-STD-020, O-269AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product B2S, B4S & B6S Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES • UL recognition, file number E54214 • Saves space on printed circuit boards • Ideal for automated placement • Middle surge current capability


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    E54214 J-STD-020, 2002/95/EC 2002/96/EC O-269AA 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 PDF

    IR B25D

    Abstract: B25DC
    Text: International B Rectifier b2sdc/d a/ds/c s /js SCR / SCR and DIODE / SCR Power Modules in B- package 25A Features • ■ ■ ■ ■ ■ ■ ■ Glass passivated junctions for greater reliability Electrically isolated base plate 3 5 0 0 V RM S Available up to 1200 V RRM, V DRM


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    B25DC/DA/DS/CS/JS 20ohm IR B25D B25DC PDF

    ic 7483 BCD adder

    Abstract: Multiplexer IC 7483 4 bit bcd adder using ic 7483 IC 74196 82S62 82583 adder transistor equivalent table of IC 7483 used in 4-bit binary adder IC 7483 BINARY ADDER SN29312
    Text: 82S OPTIMIZED SCHOTTKY MSI Series 82S optimized Schottky MSI circuits are implemented with Schottky-barrier-Diode SBD clamping to achieve ultrahigh speed previously only attainable with em itter-coupled logic and in addition low current PNP inputs provide numerous


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    82/82S 54S/74Sas 82S62 ic 7483 BCD adder Multiplexer IC 7483 4 bit bcd adder using ic 7483 IC 74196 82S62 82583 adder transistor equivalent table of IC 7483 used in 4-bit binary adder IC 7483 BINARY ADDER SN29312 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 60KQ10B 66A/10V 5.31.209 4.71.185) FEATURES 5.71.224) 5.31.208) o Similar to TO-247AC TO-3P) Case °Extremely Low Forward Voltage Drop ° Low Power Loss, High Efficiency 2.2I.087I-J 3.21.126). 0.81.031) MAX ^ • High Surge Capability


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    60KQ10B 6A/10V O-247AC 087I-J 151E3 PDF

    RUR30120

    Abstract: MOSFET 1200v 30a
    Text: HARRIS S E MI C ON D SECTOR b5E D W t 4302271 7Tì HHAS RUR30120 h a f r r is SE MI C O N D U C TO R M È % èJ È • \J 30A, 1200V Ultrafast Diode February 1993 Features G DM T HI Q Package TO-220AB • Ultrafast with Soft Recovery. <11 Ons


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    RUR30120 110ns) 1-800-4-HARRIS RUR30120 MOSFET 1200v 30a PDF

    Untitled

    Abstract: No abstract text available
    Text: □IXYS IGBT with Diode IXSK 50N60AU1 VC E S I Combi Pack = 600 V = 75 A = 2.7 V C 25 V C E sat Short Circuit S O A Capability ?C G OE Sym bol T est C onditions V CES T j = 25°C to 150°C 600 V VCGR T.J = 25°C to 150°C; Rrp = 1 M£2 Cat 600 V M axim um Ratings


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    50N60AU1 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POWER L 3E D TECHNOLOGY • 0257^ QQOimQ b2s M A VP A d v a n ced P o w er Te c h n o l o g y APT50M60JNF 500V 71A 0.060Í2 ISOTOP' S tt" U L Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP® PACKAGE N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS


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    APT50M60JNF E145592 50M60JNF OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: SbE D • T 'î E' îBa ? ÜÜ4D1GS b2S ■ SfiTH T“ * tt-Q 7 -AT / = 7 SCS THOM SON M54HC279 HOmiiLHigTOMS_ M74HC279 s G S- THOMSON _ QUAD s - R LATCH ■ HIGH SPEED tpD = 13 ns TYP. at VCc = 5V ■ LOW POWER DISSIPATION Ice = 2 i iA (MAX.) at Ta = 25°C


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    M54HC279 M74HC279 54/74LS279 7T2T237 PDF

    diode c743

    Abstract: c743 diode
    Text: PD - 5.027 International iôRjRectifier CPV362MU Ultra-Fast IGBT IGBT SIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz


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    CPV362MU 360Vdc, 5S452 00B0S3Ã diode c743 c743 diode PDF

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


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    ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212 PDF