Untitled
Abstract: No abstract text available
Text: SONY SLD322V High Power Density 0.5 W Laser Diode Description Package Outline U n it: mm The SLD322V is a high power, gain-guided laser diode produced by MOCVD method*1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be
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SLD322V
SLD322V
SLD300
3fl23fl3
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RB160-40
Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148
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CDSL4148
LL4148
PMLL4148
RLS4148
CDSF335
BAS16WS
CDSF4148
1N4148WS
RB160-40
KBPC10010
MP1008
zener diode sod80 rohm
MMBZ524B
RLR4002
SMAZ56
DIODE US1J
KBPC5010
SMAJ11
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saia
Abstract: ESJA98 ESJA98-06 ESJA98-08
Text: E S J 9 A 8 6 k v , 8 k v t K ± ' i Kw i 3? ' f k •W B'+sS : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA98I*, fcl ESJA98 is high reliability resin molded type high seepd hig voltage diode in small size package which is sealed multilayed mesa type silicon chip by epoxy resin.
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ESJA98
ESJA98&
saia
ESJA98-06
ESJA98-08
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diode schottky 5 A SMB case
Abstract: No abstract text available
Text: Features • ■ ■ SMB package Surface mount High current capability CD214B-B320 ~ B360 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214B-B320
DO-214AA
diode schottky 5 A SMB case
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Untitled
Abstract: No abstract text available
Text: ESJ A9 8 6 k V 8 , k V : Outline Drawings HIGH VOLTAGE SILICO N DIODE E S JA 9 8 (i, -yT'5:1 l- T iijh L fc E S JA 9 8 is high reliability resin molded type high seepd high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin.
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S30S3*
95t/R89
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MARKING b360
Abstract: on semiconductor device B360 CD214A-B340L SCHOTTKY BARRIER RECTIFIER MARKING code 14 DO-214AC JEDEC DO-214AC DC COMPONENTS diode b340 JEDEC DO-214AC PCB layout CD214A-B320 B360 DIODE DO214AC marking code 14
Text: PL IA NT Features *R oH S CO M • ■ ■ ■ RoHS compliant* SMA package Surface mount High current capability CD214A-B320 ~ B360 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214A-B320
DO-214AC
MARKING b360
on semiconductor device B360
CD214A-B340L SCHOTTKY BARRIER RECTIFIER
MARKING code 14 DO-214AC
JEDEC DO-214AC DC COMPONENTS
diode b340
JEDEC DO-214AC PCB layout
CD214A-B320
B360
DIODE DO214AC marking code 14
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B320
Abstract: on semiconductor device B360 B360 Marking B360 CD214A-B340
Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features • *R ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * SMA package Surface mount High current capability CD214A-B320 ~ B360 Schottky Barrier Rectifier Chip Diode General Information
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CD214A-B320
DO-214AC
B320
on semiconductor device B360
B360
Marking B360
CD214A-B340
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Diode SMA marking code PB
Abstract: "General Semiconductor" DO-214AC CD214A-B320 B360 schottky barrier B360 diode SMA marking code 14 on semiconductor device B360 B320 B330 B340 B350
Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features • *R ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * SMA package Surface mount High current capability CD214A-B320 ~ B360 Schottky Barrier Rectifier Chip Diode General Information
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CD214A-B320
DO-214AC
Diode SMA marking code PB
"General Semiconductor" DO-214AC
CD214A-B320 B360 schottky barrier
B360
diode SMA marking code 14
on semiconductor device B360
B320
B330
B340
B350
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Diode SMA marking code 15
Abstract: on semiconductor device B360 B360 Marking B360
Text: M PL IA NT Features S CO • *R oH ■ ■ ■ ■ Lead free RoHS compliant* SMA package Surface mount High current capability CD214A-B320 ~ B360 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214A-B320
DO-214AC
Diode SMA marking code 15
on semiconductor device B360
B360
Marking B360
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marking diode DO-214AB
Abstract: B330 B320 B350 B360 CD214C-B320 GENERAL SEMICONDUCTOR DIODE SMC 400
Text: PL IA NT Features *R oH S CO M • ■ ■ ■ ■ Lead free RoHS compliant* SMC package Surface mount High current capability CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214C-B320
DO-214AB
marking diode DO-214AB
B330
B320
B350
B360
CD214C-B320
GENERAL SEMICONDUCTOR DIODE SMC 400
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schottky diode SMB marking code 120
Abstract: 214B B320 B330 B350 B360 CD214B-B320 diode schottky 5 A SMB case
Text: M PL IA NT Features S CO • *R oH ■ ■ ■ ■ Lead free RoHS compliant* SMB package Surface mount High current capability CD214B-B320 ~ B360 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214B-B320
DO-214AA
schottky diode SMB marking code 120
214B
B320
B330
B350
B360
CD214B-B320
diode schottky 5 A SMB case
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B360 diode
Abstract: B360 CD214A-B320 B360 schottky barrier B320 B330 B340 B350 CD214A-B320 General Semiconductor diode marking sma Diode SMA marking code 15
Text: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ Lead free RoHS compliant* SMA package Surface mount High current capability CD214A-B320 ~ B360 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214A-B320
DO-214AC
B360 diode
B360
CD214A-B320 B360 schottky barrier
B320
B330
B340
B350
CD214A-B320
General Semiconductor diode marking sma
Diode SMA marking code 15
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marking diode DO-214AB
Abstract: B320 B330 B350 B360 CD214C-B320 "General Semiconductor" DO-214AB GENERAL SEMICONDUCTOR DIODE SMC 400
Text: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ Lead free RoHS compliant* SMC package Surface mount High current capability CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214C-B320
DO-214AB
marking diode DO-214AB
B320
B330
B350
B360
CD214C-B320
"General Semiconductor" DO-214AB
GENERAL SEMICONDUCTOR DIODE SMC 400
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DIODE B36
Abstract: part marking b36 diode Schottky Diode B36 marking B36 B36 Schottky Diode 1B marking semiconductor b36 b36 surface mount diode
Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS360T3
10IPK/IO
DIODE B36
part marking b36 diode
Schottky Diode B36
marking B36
B36 Schottky Diode
1B marking
semiconductor b36
b36 surface mount diode
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MBR360
Abstract: B350 B360 MBR350 MBR350RL MBR360RL
Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap
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MBR350,
MBR360
MBR360
r14525
MBR350/D
B350
B360
MBR350
MBR350RL
MBR360RL
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part marking b36 diode
Abstract: MBRS360BT3G MBRS360T3 MBRS360T3G SMC Package DIODE B36
Text: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS360T3,
MBRS360BT3G
MBRS360T3/D
part marking b36 diode
MBRS360BT3G
MBRS360T3
MBRS360T3G
SMC Package
DIODE B36
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking B32 diode SCHOTTKY
Abstract: marking B34 diode SCHOTTKY marking B33 diode SMC case 403 b34 DIODE schottky marking B32 DIODE B36 marking B3X MARKING B33 SMC diode code b3x
Text: MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS320T3,
MBRS330T3,
MBRS340T3,
MBRS360T3
marking B32 diode SCHOTTKY
marking B34 diode SCHOTTKY
marking B33 diode
SMC case 403
b34 DIODE schottky
marking B32
DIODE B36
marking B3X
MARKING B33 SMC
diode code b3x
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MBRS360T3G
Abstract: NRVBS360T3G NRVBS360BT3G MBRS360BT3G MBRS360BT3
Text: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS360T3G,
MBRS360BT3G,
NRVBS360T3G,
NRVBS360BT3G
MBRS360T3/D
MBRS360T3G
NRVBS360T3G
MBRS360BT3G
MBRS360BT3
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HOA2498
Abstract: No abstract text available
Text: HOA2498 Reflective Sensor , FEATURES • Choiceol phoblransislor or pholodarlingtn output ' / / ' Wide opera ling temperature range - 55'C lo-MOO'C DESCRIPTION The HOA2498 secies oons&ls ol an inFrared emitting diode -and an NPN silicon phototransislor (H0A24B&- 001, - 002) or photodarington
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HOA2498
44-I--I-WÃ
00SSSBSÃ
HOA2498
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DIODE MOTOROLA B34
Abstract: marking B34 diode SCHOTTKY motorola b36 b34 DIODE schottky CASE 403-03 B34 motorola DIODE B36 diode b34 motorola b34 diode marking b34
Text: MOTOROLA Order this document by MBRS340T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS340T3 MBRS360T3 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with
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MBRS340T3/D
MBRS340T3
MBRS360T3
DIODE MOTOROLA B34
marking B34 diode SCHOTTKY
motorola b36
b34 DIODE schottky
CASE 403-03
B34 motorola
DIODE B36
diode b34
motorola b34
diode marking b34
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with
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MBR320/D
MBR320
MBR330
MBR340
MBR350
MBR360
MBR340
MBR360
b3b72Â
MBR320
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MOTOROLA B360
Abstract: MBR340 B320 B330 B340 B350 B360 MBR320 MBR330 MBR350
Text: MOTOROLA Order this document by MBR320/D SEMICONDUCTOR TECHNICAL DATA MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with
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MBR320/D
MBR320
MBR330
MBR340
MBR350
MBR360
MBR340
MBR360
MOTOROLA B360
B320
B330
B340
B350
B360
MBR320
MBR330
MBR350
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5B1 zener diode
Abstract: 6b2 zener diode zener diode 4B3 B20 zener diode smd diode b13 zener diode b27 b16 zener b36 smd diode zener b27 smd diode code B12
Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)
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MM3ZB39
OD-323
OD-323
5B1 zener diode
6b2 zener diode
zener diode 4B3
B20 zener diode
smd diode b13
zener diode b27
b16 zener
b36 smd diode
zener b27
smd diode code B12
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