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    DIODE BAW 99 Search Results

    DIODE BAW 99 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE BAW 99 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5 PDF

    2907A PNP bipolar transistors

    Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    OT-23 OT-143 2907A PNP bipolar transistors diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT PDF

    S4 78a DIODE schottky

    Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    25-RF-BIPOLAR-Transistors. 45-RF-BIPOLAR-Transistors. OT-23 OT-143 S4 78a DIODE schottky diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92 PDF

    2907A PNP bipolar transistors

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


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    O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846 PDF

    BAW56LT1

    Abstract: 2G132 g131
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode BAW56LT1 1 CATHODE 3 ANODE 3 2 CATHODE 1 2 CASE 318–08, STYLE12 SOT– 23 TO–236AB MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current


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    BAW56LT1 STYLE12 236AB) BAW56LT1 2G132 g131 PDF

    Untitled

    Abstract: No abstract text available
    Text: Monolithic Dual Switching Diode Common Anode BAW56LT1 1 CATHODE 3 ANODE 3 2 CATHODE 1 2 CASE 318–08, STYLE12 SOT– 23 TO–236AB MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF I FM(surge) Value


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    BAW56LT1 STYLE12 236AB) PDF

    MDD 1654

    Abstract: TMT Isolator wr 90 x band flange waveguide teledyne yig oscillator 10GHz bandpass filter yig oscillator hp m7928 teledyne microwave mbg ferretec filtronic band-pass
    Text: TELEDYNEMICROWAVE the complete microwave solution Table of Contents Company Profile. . . . . . . . . . . . . . . . . . . . . . . . . 5 Sub-Systems. . . . . . . . . . . . . . . . . . . . . . . . . . 7 Diplexers and Multiplexers. . . . . . . . . . . . . . . . . . . . . . . . . . 82


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    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


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    B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


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    B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    flux F-SW32

    Abstract: C42315-A1353-A3 PBTp-GF30 C42315-A60-A2 smd diode code Bek siemens spc2 C42315-A60-A3 SPC266 smd a68 F2955
    Text: Schalter und Tasten Switches and Pushbuttons Datenbuch Data Book Contents Typenübersicht Qualitätssicherungssystem Begriffsbestimmungen und Erläuterungen Verarbeitungshinweise Summary of available types Quality assurance System Definitions and remarks Notes on processing


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    A1345 A1341, A3000 A1353 A1347 LBB126 STB11, STB21 SPC266, SPC758, flux F-SW32 C42315-A1353-A3 PBTp-GF30 C42315-A60-A2 smd diode code Bek siemens spc2 C42315-A60-A3 SPC266 smd a68 F2955 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode BAW 56W T1 M otorola Preferred D evice CATHODE 3 C IANODE MAXIMUM RATINGS -H — ° 1 -H — o 2 TA = 25 C Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current if 200 mAdc iFM(surge)


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    -70/S T-323 BAW56WT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Switching Diodes BAW 79 A BAW 79 D • For high-speed switching • High breakdown voltage • Common cathode Type Marking Ordering Code tape and reel BAW 79 A BAW 79 B BAW 79 C BAW 79 D GE GF GG GH Q62702-A781 Q62702-A782 Q62702-A771 Q62702-A733


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    Q62702-A781 Q62702-A782 Q62702-A771 Q62702-A733 OT-89 D12D434 fl235bà PDF

    2Sc945 equivalent

    Abstract: 2SA733 equivalent 2SA733B 2sc1623 equivalent 2SC2002 equivalent 2SC1216 2SA603 2SK104 2SC923 2sc2001 equivalent
    Text: 10. Specifications of MINI M O L D Device Typ« Number Regular /Reversal 2SA811 2SA812/2SA812R PNP Tran­ sistor NPN Tranlilto r Nearest Equivalent* ' M M BA811.M M BA812 | BCW29.SCW 30,BCW 69,8CW 70,MMBTA70 TO-92 Packaged Equivalent Page 2SA641 21 2SA733.BC556.BC5571BC558,BC559,BC560


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    2SA811 2SA812/2SA812R 2SB624/2SB624R 2S8736/2S8736R 907A/NTM 2907AR TM3906/NTM3906R BA811 BA812 2SA641 2Sc945 equivalent 2SA733 equivalent 2SA733B 2sc1623 equivalent 2SC2002 equivalent 2SC1216 2SA603 2SK104 2SC923 2sc2001 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAW56WT1/D SEMICONDUCTOR TECHNICAL DATA Dual Sw itching Diode BAW56WT1 Motorola Preferred Device CATHODE 1 3 ANODE MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current if 200 mAdc iFM(surge)


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    BAW56WT1/D BAW56WT1 70/SOTâ SC-70/SQT-323 PDF

    MARKING YA SOT-23

    Abstract: w56 transistor MARKING YA J3 SOT-23 ZC831 sot-23 marking YA Diode Marking z3 SOT-23 DIODE W7 BZX84C12 BAR99 BAS16
    Text: I FERRANTI T IIsemiconductorsL BAW56 High Speed S w itc h in g D iode Pair C om m on A node DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in th in and th ick fiiim


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    BAW56 OT-23 BAW56 C9/C20 50MHz ZC830A ZC831A ZC832A MARKING YA SOT-23 w56 transistor MARKING YA J3 SOT-23 ZC831 sot-23 marking YA Diode Marking z3 SOT-23 DIODE W7 BZX84C12 BAR99 BAS16 PDF

    MARKING YA SOT-23

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAW156LT1/D SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Switching Diode BAW156LT1 This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times M otorola Preferred Device


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    BAW156LT1/D BAW156LT1 BAW156LT1 BAW156LT3to inch/10 -236AB) MARKING YA SOT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Sw itching Diode BAW156LT1 This switching diode has the following features: Motorola Preferred Device Low Leakage Current Applications Medium Speed Switching Times Available in 8 mm Tape and Reel Use BAW156LT1 to order the 7 inch/3,000 unit reel


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    BAW156LT1 BAW156LT3 inch/10 BAW156LT1 OT-23 O-236AB) PDF

    BAY99

    Abstract: BAW56 Diode BAV99 SOT23 BAV70 BAY70 3PIR BAS16 BAV99 MJ marking sot23 LFL 2.25
    Text: Surface M o u n t S w itching Diode SW ITCH IN G DIODE 200-215m AM PERRES 70-75 VOLTS F eatu res: *Low C urrent Leakage *Low Forward Voltage "Reverse Recover Tim e T r r* 6 n s *S m all O utline Surface M ount SOT-23 Package SOT-23 O u tlin e Dimensions unit:mm


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    OT-23 BAV70 BAW56 200-215m OT-23 B\W54> BAY99 Diode BAV99 SOT23 BAY70 3PIR BAS16 BAV99 MJ marking sot23 LFL 2.25 PDF

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


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    O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: About Lab Kits General: Engineers and designers find Lab Kits convenient and economical. Each Lab Kit contains a broad range of the most popular components. Assembly: Lab Kits are available on tape and reel for automated assembly on pick-andplace m achines or in bulk bags and


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    SM5819 40Vtms BT2222A BT2907A BT3904 BT3906 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by BAW56LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode Common Anode BAW56LT1 Motorola Preferred Device CATHODE ANODE 3 O -— ' H N O 1 ° 2 CATHODE MAXIMUM RATINGS EACH DIODE Rating Sym bol Value Unit Reverse Voltage


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    BAW56LT1/D BAW56LT1 PDF

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175 PDF

    ZPD 5.1 ITT

    Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
    Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers


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    F-92223 D-7800 ZPD 5.1 ITT ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode PDF

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


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