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    DIODE BAY 21 Search Results

    DIODE BAY 21 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE BAY 21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    50N03

    Abstract: Diode BAY 32 50N035 50N035T Bay Linear 50N035S 52A32
    Text: Bay Linear Linear Excellence 50N035 N-Channel Field Effect Transistor Description Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications


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    PDF 50N035 O-220 50N03 Diode BAY 32 50N035 50N035T Bay Linear 50N035S 52A32

    60N03

    Abstract: 60N035 60N035S Bay Linear 60N035T
    Text: Bay Linear Linear Excellence 60N035 N-Channel Field Effect Transistor Advance Information Description Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications


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    PDF 60N035 O-220 60N03 60N035 60N035S Bay Linear 60N035T

    MOSFET 400V TO-220

    Abstract: IRF820 IRL820S IRL820T
    Text: Bay Linear Linear Excellence IRF820 POWER MOSFET Advance Information Description Features • • • • • The Bay Linear MOSFET’s provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness.


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    PDF IRF820 O-220 MOSFET 400V TO-220 IRF820 IRL820S IRL820T

    12N035

    Abstract: 12N035T Bay Linear 12N035S
    Text: Bay Linear Inspire the Linear Power 12N035 N-Channel Field Effect Transistor Description Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications


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    PDF 12N035 O-220 12N035 12N035T Bay Linear 12N035S

    IGBT DRIVER ignition coil automotive

    Abstract: mosfet to ignition coil HGT1S14N40G3VLS HUF76639 N-channel MOSFET to-247 50a TO-252 N-channel power MOSFET HGTP14N45G3VL ignition IGBTS 60V 60A TO-252 N-CHANNEL 60V 60A TO-252
    Text: 107730 Auto Line Card_PW 8/24/00 7:48 PM Page 1 www.intersil.com Automotive Discrete Power Products UltraFET MOSFETs and IGBTs enhance the peak performance of automotive systems in the 21st century Intersil is proud to continue introducing exciting new families of


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    PDF HUF75639P3, HUF75639S3S HUF75637P3, HUF75637S3S HUF75631P3 HUF75623P3 FN4477 FN4721 FN4720 FN4804 IGBT DRIVER ignition coil automotive mosfet to ignition coil HGT1S14N40G3VLS HUF76639 N-channel MOSFET to-247 50a TO-252 N-channel power MOSFET HGTP14N45G3VL ignition IGBTS 60V 60A TO-252 N-CHANNEL 60V 60A TO-252

    Untitled

    Abstract: No abstract text available
    Text: Bay Linear Inspire the Linear Power LM4041 Precision Micro power Voltage Reference Description Features The LM4041 is a two-terminal, temperature compensated, band-gap voltage reference, which provides a fixed 1.25V output for input currents between 500 µA to 5mA. The bandgap voltage 1.225V is


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    PDF LM4041 LM4041 OT-23,

    B4041B

    Abstract: B4041 LM4041 B4041A-2 Diode BAY 74
    Text: Bay Linear Inspire the Linear Power B4041 Precision Micro power Voltage Reference Description Features The B4041 is a two-terminal, temperature compensated, band-gap voltage reference, which provides a fixed 1.25V output for input currents between 500 µA to


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    PDF B4041 B4041 OT-23, B4041B LM4041 B4041A-2 Diode BAY 74

    h569-445

    Abstract: H569445 ED83127-30 G-D ED83127-30 H569 T-83150-30 Diode FAJ ED83019-50 schematic symbol circuit breaker panel ED83127
    Text: Secondary DC Power Distribution Bay H569-445 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 5 May 2000 2000 Lucent Technologies Product Manual Select Code 157-005-104 Comcode 108405283 Issue 5 May 2000 Lucent Technologies Secondary DC Power Distribution Bay


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    PDF H569-445 H569-455 h569-445 H569445 ED83127-30 G-D ED83127-30 H569 T-83150-30 Diode FAJ ED83019-50 schematic symbol circuit breaker panel ED83127

    Linear Thermometer icl 7107

    Abstract: ICL 7107 Application Notes ICL-7107 ICL 7107 7107 7107 display driver icl7107 applications 7107 applications 7107 Application Notes ICL7107 7106
    Text: Bay Linear Inspire the Linear Power 3-1/2 Digit LCD/LED Display, A/D Converter Description Features The ICL7106 and ICL 7107 are high performance, low power 3-1/2 digit A/D converters. Included are seven segment decoders, Display drivers, a reference and a clock. The ICL


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    PDF ICL7106 Linear Thermometer icl 7107 ICL 7107 Application Notes ICL-7107 ICL 7107 7107 7107 display driver icl7107 applications 7107 applications 7107 Application Notes ICL7107 7106

    rxmb1

    Abstract: RELAY RZ2 SUMMATION current transformer ABB rxtp 18 rxmd 2 current transformer ABB transformers of power station relay rd3 BUSBAR calculation datasheet relay 6 volt
    Text: Bus differential relay using auxiliary summation CT’s REB 101 1-phase 1MRK 505 006-BEN Page 1 Issued: September 2006 Revision: C Data subject to change without notice SE970178 Features • Percentage restrained differential relay for phase-to-phase and phase-to-earth faults


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    PDF 006-BEN SE970178) 004-BEN 001-BEN 015-BEN 016-BEN SE-721 rxmb1 RELAY RZ2 SUMMATION current transformer ABB rxtp 18 rxmd 2 current transformer ABB transformers of power station relay rd3 BUSBAR calculation datasheet relay 6 volt

    relay rd3

    Abstract: RELAY RZ2 ABB transformer rxmb1 ABB rxtp 18 abb rxmb1 BUSBAR calculation datasheet REB103 RELAY RZ2 5 ABB RXTUG 22H
    Text: Bus differential relay REB 103 3-phase 1MRK 505 007-BEN SE970146 Page 1 Issued: September 2006 Revision: C Data subject to change without notice Features • Percentage restrained differential relay for phase-to-phase and phase-to-earth faults. • Very high E/F-sensitivity of the differential


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    PDF 007-BEN SE970146) 003-BEN 001-BEN 007-UEN 015-BEN 016-BEN 004-BEN SE-721 relay rd3 RELAY RZ2 ABB transformer rxmb1 ABB rxtp 18 abb rxmb1 BUSBAR calculation datasheet REB103 RELAY RZ2 5 ABB RXTUG 22H

    h569-445

    Abstract: H569-445 G1 FAJ 38 ED83127-30 ED83127-30 G-D T-83150-30 848258679 BDFB ED83127 G61A
    Text: Secondary DC Power Distribution Bay H569-445 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Secondary DC Power Distribution Bay H569-445 Notice:


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    PDF H569-445 h569-445 H569-445 G1 FAJ 38 ED83127-30 ED83127-30 G-D T-83150-30 848258679 BDFB ED83127 G61A

    LM7827

    Abstract: LM7805 TO263 LM7805 TO252 LM7812 to-263 LM7805 TO 263 LM7818 TO263 LM7809 application notes LM7815 d2478 LM7809
    Text: Bay Linear Inspire the Linear Power LM78XX 1.5A Positive Voltage Regulator Description Features The Bay Linear LM78XX is integrated linear positive regulator with three terminals. The LM78XX offer several fixed output voltages making them useful in wide range of


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    PDF LM78XX LM78XX O-252, O-220 O-263 LM7827 LM7805 TO263 LM7805 TO252 LM7812 to-263 LM7805 TO 263 LM7818 TO263 LM7809 application notes LM7815 d2478 LM7809

    LM78M10

    Abstract: LM78M08 LM78M15 LM78M09 Diode BAY 55 LM78M12 LM78MXX LM78M05 LM78M06 Diode BAY 96
    Text: Bay Linear Inspire the Linear Power LM78MXX 500mA Positive Voltage Regulator Description Features The Bay Linear LM78MXX is integrated linear positive regulator with three terminals. The LM78MXX offer several fixed output voltages making them useful in wide range of


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    PDF LM78MXX 500mA LM78MXX O-220, O-263 O-252 500mA LM78M10 LM78M08 LM78M15 LM78M09 Diode BAY 55 LM78M12 LM78M05 LM78M06 Diode BAY 96

    Diode BAY 46

    Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
    Text: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j


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    PDF 1N456 BAW21A 1N456 BAX12 CB-102) CB-104) Diode BAY 46 Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode

    Diode BAY 46

    Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
    Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j


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    PDF 1N456 BAW21A CB-26) CB-127 Tamb100Â Tamb125Â Tamb60Â CB-127 CB-127. Diode BAY 46 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49

    Diode BAY 46

    Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
    Text: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a


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    PDF 1N456 BAW21A SFD79 CB-26) baw55 CB-127 CB-127. Diode BAY 46 Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41

    Diode BAY 71

    Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
    Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a


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    PDF 1N456 BAW21A BAW75 BAW76 BAX84 SFD43 CB-104) 34/CB-104) CB-127 CB-127. Diode BAY 71 Diode BAY 45 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49

    Diode BAY 19

    Abstract: Diode BAY 21 Diode BAY 80 IR 10D DIODE Diode BAY 18 Diode BAY 45 Diode BAY 42 "BAY 21" BAY18 bay 17 diode
    Text: Silicon Diodes Silicon Junction Diodes in DO-7 glass encapsulation fo r general a p p lica tio n s T yp e M a x im u m R a tin g s C h a ra c te ris tic s ia> @ @ @ T = 25 ° C amb = am° T 25 ° C Vp = U = 25 ° C @ 1 V VR = f = 10 V 0,5 M H z Q amb Vr V


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    PDF BAW21 Diode BAY 19 Diode BAY 21 Diode BAY 80 IR 10D DIODE Diode BAY 18 Diode BAY 45 Diode BAY 42 "BAY 21" BAY18 bay 17 diode

    Diode BAY 55

    Abstract: Diode BAY 88 Diode BAY 21 Diode BAY 45 BAY 88 diode BAY 87 diode U264 B u264 74345 BAV86
    Text: BAY 86 * BAY 87 • BAY 88 Silizium-Diffusions-Dioden Silicon diffusion diodes Anwendungen: Allgemein Applications: General purposes Abmessungen in mm Dimensions in mm g 2,6 Absolute Grenzdaten Absolute maximum ratings Normgehäuse Case 5 1 A 2 DIN 41880 JEDEC DO 7


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    PDF U-26-Â Diode BAY 55 Diode BAY 88 Diode BAY 21 Diode BAY 45 BAY 88 diode BAY 87 diode U264 B u264 74345 BAV86

    Diode BAY 21

    Abstract: Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D
    Text: general purpose and sw itching diode selector guide guide de sélection diodes de commutation et usage général t h o m s o n -c s f Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 €£043 1N456 25 J 1N 456 A W 449)1 1 rtm a a j


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    PDF 1N456 BAW21A CB-26) Diode BAY 21 Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D

    MI31T

    Abstract: MI31TA MIB31TA Diode BAY 45
    Text: MI31T MI31TA CRO INFRARED EMITTING DIODE DESCRIPTION ML31T & MIB31TA are GaAlAs infrared emitting diode molded in 3.2mm diameter clear transparent lens. 03.15 0.124 r 5.3 ( . ) 0 21 1.0(0 % ,04)-f -N\ 0.75(0.03) max. • • • A ll dim ension .in mm(inch)


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    PDF MI31T MI31TA ML31T MIB31TA 150mW Diode BAY 45

    BAV99W A7

    Abstract: BAV99VV BAS16VV BAS16W BAV70W BAV99W BAW56W BAV99W peak temperature
    Text: BAS16W / BAV70W BA W 56W / BAV99W Surface M o u n t Sw itchin g Diode SW ITCHING DIODE 200-215m AMPF.RRES 70-75 VOLTS Featui-es: T o w Current Leakage *Low Forward Voltage “ Reverse Recover Time T rr*6 n s *Sm all Outline Surface Mount SOT-323 Package •


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    PDF BAS16W BAV70W BAW56W BAV99W 200-215m OT-323 T-323 SC-70) OT-323 BAV99W A7 BAV99VV BAS16VV BAV99W BAV99W peak temperature

    BAY99

    Abstract: BAW56 Diode BAV99 SOT23 BAV70 BAY70 3PIR BAS16 BAV99 MJ marking sot23 LFL 2.25
    Text: Surface M o u n t S w itching Diode SW ITCH IN G DIODE 200-215m AM PERRES 70-75 VOLTS F eatu res: *Low C urrent Leakage *Low Forward Voltage "Reverse Recover Tim e T r r* 6 n s *S m all O utline Surface M ount SOT-23 Package SOT-23 O u tlin e Dimensions unit:mm


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    PDF OT-23 BAV70 BAW56 200-215m OT-23 B\W54> BAY99 Diode BAV99 SOT23 BAY70 3PIR BAS16 BAV99 MJ marking sot23 LFL 2.25