am-209m
Abstract: B5213 MIC5213 SC70-5
Text: Bay Linear Inspire the Linear Power B5213 100mA, µCap, Low Dropout Voltage Regulator Smallest SC70 Description Features The B5213 is a µCap, low dropout voltage regulator with very low quiescent current, 220 µA typical, at 80mA load. It also has very low dropout voltage, typically 20mV at light load and
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B5213
100mA,
B5213
330mV
am-209m
MIC5213
SC70-5
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Diode BAY 55
Abstract: Bay Linear 4N600 4N600S 4N600T 4N6003600 DSA0083437
Text: Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor Description 4N600 3600 Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications
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4N600
O-220
Diode BAY 55
Bay Linear
4N600S
4N600T
4N6003600
DSA0083437
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IRF540 d2 package
Abstract: IRF540 application mosfet irf540 IRL540T Diode BAY 72 IRF540 IRL540S linear mosfet
Text: Bay Linear Linear Excellence IRF540 POWER MOSFET Advance Information Description Features The Bay Linear MOSFET’s provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness. The TO-220 is offered in a 3-pin is universally preferred for all
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IRF540
O-220
IRF540 d2 package
IRF540 application
mosfet irf540
IRL540T
Diode BAY 72
IRF540
IRL540S
linear mosfet
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diode 8255
Abstract: LINEAR MARKING 8253/8254 MARKING e6 SOT26 8251 cross c5 marking code sot-323 Diode BAY 80 sot-23-3 c6 MARKING C3 SOT-323 Diode c4z
Text: Bay Linear Inspire the Linear Power B8250 Surface Mount Zero Bias Schottky Detector Diodes Series Description Features The B-8250 line of zero bias Schottky detector diodes by Bay Linear have been engineered for use in small signal Pin<-20 dBm applications at frequencies below 2.0
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B8250
B-8250
diode 8255
LINEAR MARKING
8253/8254
MARKING e6 SOT26
8251 cross
c5 marking code sot-323
Diode BAY 80
sot-23-3 c6
MARKING C3 SOT-323
Diode c4z
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dual photodiode
Abstract: 2 Wavelength Laser Diode ADN2841 automatic laser power control diode IN 5402 FU-445 laser diodes driver
Text: ADN2841—Continuous Rate 2.7 Gbps Laser Diode Driver with Dual-Loop Control Features • Closed-loop control of the laser diode average power and extinction ratio • Does not require any data formatting • Data rates from 50 Mbps to 2.7 Gbps 80 ps typical rise time
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ADN2841--Continuous
ADN2841
H02412-5-2/03
F-92182
dual photodiode
2 Wavelength Laser Diode
automatic laser power control
diode IN 5402
FU-445
laser diodes driver
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h569-445
Abstract: H569445 ED83127-30 G-D ED83127-30 H569 T-83150-30 Diode FAJ ED83019-50 schematic symbol circuit breaker panel ED83127
Text: Secondary DC Power Distribution Bay H569-445 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 5 May 2000 2000 Lucent Technologies Product Manual Select Code 157-005-104 Comcode 108405283 Issue 5 May 2000 Lucent Technologies Secondary DC Power Distribution Bay
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H569-445
H569-455
h569-445
H569445
ED83127-30 G-D
ED83127-30
H569
T-83150-30
Diode FAJ
ED83019-50
schematic symbol circuit breaker panel
ED83127
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E172395
Abstract: David chi
Text: CUSTOMER: DESCRIPTION: MODEL NO.: DAVID NO.: ISSUE DATE .: ISSUE EDITON .: AC ADAPTOR DP48-1201000 C169-75 2010/04/08 A1 FOR APPROVAL SHEET 1.According to our ISO-9002 system, We cannot process your P.O before you approve this specification by signing, stamping and returning the“Declaration of
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DP48-1201000
C169-75
ISO-9002
E172395
David chi
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B3431
Abstract: B3431AK3 B3431BK3 B3431CK3 LM3431 Diode BAY 80 Diode BAY 55
Text: Bay Linear Inspire the Linear Power B3431 Adjustable Shunt Regulator Description Features The Bay Linear B3431 is a three terminal adjustable shunt regulator with thermal stability over Temperature range. Using two external resistors allows the output voltage to be adjusted from 2.5V to 36V. With a sharp
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B3431
B3431
to100mA
105oC
OT-23
2478Armstrong
B3431AK3
B3431BK3
B3431CK3
LM3431
Diode BAY 80
Diode BAY 55
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KA 2418
Abstract: diode 3683 B431 B431AM B431AR B431AZ B431BR B431BZ B431CR B431CZ
Text: Bay Linear Inspire the Linear Power B431 2.5V Adjustable Shunt Regulator Description Features The Bay Linear B431 is a three terminal adjustable shunt regulator with thermal stability over Temperature range. Using two external resistors allows the output voltage to be adjusted
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to100mA
105oC
OT-89,
KA 2418
diode 3683
B431
B431AM
B431AR
B431AZ
B431BR
B431BZ
B431CR
B431CZ
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Untitled
Abstract: No abstract text available
Text: Bay Linear Inspire the Linear Power B431 2.5V Adjustable Shunt Regulator Description Features The Bay Linear B431 is a three terminal adjustable shunt regulator with thermal stability over Temperature range. Using two external resistors allows the output voltage to be adjusted
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to100mA
105oC
OT-89,
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Untitled
Abstract: No abstract text available
Text: BAY 92 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: Schnelle Schalter, für hohe Betriebsspannungen Applications: Fast switches, with high supply voltages Abmessungen in mm Dimensions in mm 1 1 Il_ I If— "111 1 1 1 1U - H i —
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Diode BAY 45
Abstract: Diode BAY 89 41880
Text: BAY 89 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: Allgemein, für sehr hohe Betriebsspannungen Applications: General purpose, for very high supply voltages Normgehäuse Case 5 1 A 2 DIN 41880 JEDEG DO 7 Gewicht • Weight max. 0,2 g Abmessungen in mm
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Diode BAY 96
Abstract: Diode BAY 55 BAY67 RF-45 IR diodes TFK 4 TFK diode TFK diodes DIODE R 67
Text: BAY 67 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: HF-Schaltdicide Applications: Switching RF signals Abmessungen in mm Dimensions in mm g 2 ,6 . II— 11 0 0 ,5 5 — |l- — - H I — •— —-2 6 -► m -7 .2 -— —- 2 6 - -
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-26-J
Diode BAY 96
Diode BAY 55
BAY67
RF-45
IR diodes TFK 4
TFK diode
TFK diodes
DIODE R 67
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Diode BAY 93
Abstract: a9 sot 23 diode
Text: TELEFUNKEN ELECTRONIC 17E D Û00S753 b • AL GG ■ BAY 93 ■¡nH IF(U I«IM electronic Creative Technologies T -Q l-Q j Silicon Epitaxial Planar Diode Applications: Very fast switches Dimensions in mm Cathode »26 Standard glass case 5 4 A 2 DIN 41880 JEDEC DO 35
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00S753
Diode BAY 93
a9 sot 23 diode
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Diode BAY 46
Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Text: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j
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1N456
BAW21A
1N456
BAX12
CB-102)
CB-104)
Diode BAY 46
Diode BAY 45
Diode BAY 21
Diode BAY 80
Diode BAY 19
BAY 73 diode
Diode BAY 41
Diode BAY 72
Diode BAY 42
bav 21 diode
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Diode BAY 46
Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j
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1N456
BAW21A
CB-26)
CB-127
Tamb100Â
Tamb125Â
Tamb60Â
CB-127
CB-127.
Diode BAY 46
1N 4000 diode
1N3069
BA224-220
BAV45
BAY41
Diode BAY 41
Diode BAY 80
BAX12
SFD49
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Diode BAY 46
Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Text: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a
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1N456
BAW21A
SFD79
CB-26)
baw55
CB-127
CB-127.
Diode BAY 46
Diode BAY 80
Diode BAY 74
Diode BAY 45
Diode BAY 19
diode BAW55
BAY 73 diode
1N3595
Diode BAY 21
Diode BAY 41
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Diode BAY 71
Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a
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1N456
BAW21A
BAW75
BAW76
BAX84
SFD43
CB-104)
34/CB-104)
CB-127
CB-127.
Diode BAY 71
Diode BAY 45
Diode BAY 46
Diode BAY 88
BAW21
ESM 3070
1n 4009 diode
BAY67
SFD49
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Diode BAY 19
Abstract: Diode BAY 21 Diode BAY 80 IR 10D DIODE Diode BAY 18 Diode BAY 45 Diode BAY 42 "BAY 21" BAY18 bay 17 diode
Text: Silicon Diodes Silicon Junction Diodes in DO-7 glass encapsulation fo r general a p p lica tio n s T yp e M a x im u m R a tin g s C h a ra c te ris tic s ia> @ @ @ T = 25 ° C amb = am° T 25 ° C Vp = U = 25 ° C @ 1 V VR = f = 10 V 0,5 M H z Q amb Vr V
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BAW21
Diode BAY 19
Diode BAY 21
Diode BAY 80
IR 10D DIODE
Diode BAY 18
Diode BAY 45
Diode BAY 42
"BAY 21"
BAY18
bay 17 diode
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Diode BAY 55
Abstract: Diode BAY 88 Diode BAY 21 Diode BAY 45 BAY 88 diode BAY 87 diode U264 B u264 74345 BAV86
Text: BAY 86 * BAY 87 • BAY 88 Silizium-Diffusions-Dioden Silicon diffusion diodes Anwendungen: Allgemein Applications: General purposes Abmessungen in mm Dimensions in mm g 2,6 Absolute Grenzdaten Absolute maximum ratings Normgehäuse Case 5 1 A 2 DIN 41880 JEDEC DO 7
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U-26-Â
Diode BAY 55
Diode BAY 88
Diode BAY 21
Diode BAY 45
BAY 88 diode
BAY 87 diode
U264 B
u264
74345
BAV86
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Diode BAY 61
Abstract: Diode BAY 55 Diode BAY 80 3AX11 BXY 36 DIODE diode sax 34 bxy26 Diode BAY 68 Diode BAY 23 BAX11
Text: /licrowave semiconductor diodes and components licrowave PN silicon diodes Type Fig. Nr. GHz ft ns ÄthJC K/W 10.15 33 2 10 33 2 10 3AX 11/10 34 60 3AX11/IU 34 60 o / • Ö6V 00 cj at £/r = 6 V pF CO tf BR V 60 4,7.6,8 47 1 12 34 60 3,3.4,7 47 1 12
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3AX11/IO
3AX11/IU
11/ilo
3AX11/IÃ
3AX11
BAX11
79/III
79/IV
26/II
Diode BAY 61
Diode BAY 55
Diode BAY 80
BXY 36 DIODE
diode sax 34
bxy26
Diode BAY 68
Diode BAY 23
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Diode BAY 21
Abstract: Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D
Text: general purpose and sw itching diode selector guide guide de sélection diodes de commutation et usage général t h o m s o n -c s f Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 €£043 1N456 25 J 1N 456 A W 449)1 1 rtm a a j
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1N456
BAW21A
CB-26)
Diode BAY 21
Diode BAY 18
Diode BAY 32
Diode BAY 19
Diode BAY 12
Diode BAY 45
BAY46
BAW32B
BAY18
BAW32D
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BAY 80 diode
Abstract: Diode BAY 54 Diode BAY 55 BAY69 BAY 69 Diode BAY 80
Text: TELEFUNKEN ELECTRONIC 17E D TllUllFMIMKilifl electronic • â'îSOO'ïfc. O O O ^ M S 7 ■ AL66 BAY 68 • BAY 69 Creative Technologies T - O Z - 0 ° l Silicon Epitaxial Planar Diodes Applications: Very fast switches Dimensions in mm •110« Cathoda /«<1.6 g<Q55
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Diode BAY 80
Abstract: BAY72 Diode BAY 72 34696 BAY80 BAY 80 diode
Text: FAIRCH IL D SE MI CO NDU CTO R S4 i F| DaBTBlb E J~- 3469 674 T A I R C H I U D ”SE MI C O N D U C T O R g g fg g ^ T S 84D 27296 BAY72/BAY80 - A Schlum berger C om pany T. PACKAGES BAY72 BAY80 ABSOLUTE MAXIMUM RATINGS N ote 1) T e m p e ra tu re s S torage Tem perature Range
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BAY72/BAY80
BAY72)
Diode BAY 80
BAY72
Diode BAY 72
34696
BAY80
BAY 80 diode
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