bc547 philips
Abstract: NPN transistor BC547 as a diode Application Note tda5142 R27 transistor BC547 r17a transistor t13 mosfet current limiter BD438 equivalent BD680
Text: Application Note I C s f o r M o t o r C o n t r o l TDA5142 output driver stages for supply voltages up to 30 V Report No: EIE/AN93013 R. Galema Product Concept & Application Laboratory Eindhoven, the Netherlands. Keywords Motor Control TDA5142 Date : 27 June 1995
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TDA5142
EIE/AN93013
TDA5142
TDA514x
sta43
BZX79C8V2)
BYV10-40
bc547 philips
NPN transistor BC547 as a diode
Application Note tda5142
R27 transistor
BC547
r17a
transistor t13
mosfet current limiter
BD438 equivalent
BD680
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Untitled
Abstract: No abstract text available
Text: TVS Connectors J MIL-DTL-38999 Series III Type TVS Connectors TVS Selection Chart Table III: TVS Selection Chart Diode Reverse Breakdown Voltage V Max Reverse Leakage (Ua) Test Voltage Standoff Current Min Max 1,500W 3,000W 5,000W Code Voltage (V) (MA) 5.0
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MIL-DTL-38999
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CM800DZB-34N
Abstract: 1000v bipolar transistor hvigbt diode
Text: MITSUBISHI HVIGBT MODULES CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800DZB-34N ● IC . 800A ● VCES . 1700V
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CM800DZB-34N
CM800DZB-34N
1000v bipolar transistor
hvigbt diode
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tde3247dp
Abstract: ultrasonic proximity detector TDE3247D TDE1798DP VN808 tde1767dp L6374FP TDE1708 tde1707b VIPower
Text: Intelligent power switches VIPower technology PENTAWATT Intelligent power switches I.P.S. PPAK PowerSO-10 VN808/CM/SR Octal HSD SO-8 SO-20 Reference guide 160mΩ VN330SP Quad HSD 200mΩ VN340SP Quad HSD 200m VNQ860 Quad HSD 270mΩ VN540 Single HSD PowerSO-36
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PowerSO-10
VN808/CM/SR
PowerSO-36
SO-20
VN330SP
VN340SP
VNQ860
VN540
VN751
PowerSO-20
tde3247dp
ultrasonic proximity detector
TDE3247D
TDE1798DP
VN808
tde1767dp
L6374FP
TDE1708
tde1707b
VIPower
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CM1000E4C-66R
Abstract: No abstract text available
Text: < HVIGBT MODULES > CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1000E4C-66R IC •······························································ 1000A
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CM1000E4C-66R
HVM-1055-F
HVM-1055-F)
CM1000E4C-66R
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GB75DA120UP
Abstract: IGBT 75 D
Text: GB75DA120UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package
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GB75DA120UP
OT-227
2002/95/EC
18-Jul-08
GB75DA120UP
IGBT 75 D
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CM800HC-66H
Abstract: r 1241 transistor
Text: MITSUBISHI HVIGBT MODULES CM800HC-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HC-66H ● IC . 800A ● VCES . 3300V
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CM800HC-66H
/-15V
CM800HC-66H
r 1241 transistor
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CM1000HC-66R
Abstract: 1061 transistor HVIGBT transistor h 1061
Text: < HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1000HC-66R IC •······························································ 1000A
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CM1000HC-66R
HVM-1061-B
HVM-1061-B)
CM1000HC-66R
1061 transistor
HVIGBT
transistor h 1061
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CM1200HG-66H
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HG-66H ● IC . 1200A ● VCES . 3300V
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CM1200HG-66H
/-15V
CM1200HG-66H
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Untitled
Abstract: No abstract text available
Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package
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GB75DA120UP
OT-227
2002/95/EC
OT-227
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package
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GB75DA120UP
OT-227
E78996
2002/95/EC
OT-22hay
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package
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GB75DA120UP
OT-227
E78996
2002/95/EC
OT-22hay
11-Mar-11
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PDF
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spice model Tunnel diode
Abstract: dpsN TUNNEL DIODE spice model
Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation
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Untitled
Abstract: No abstract text available
Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package
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GB75DA120UP
OT-227
E78996
2002/95/EC
OT-22trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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CM800
Abstract: CM800E6C-66H bipolar transistor 124 e mitsubishi The label version
Text: MITSUBISHI HVIGBT MODULES CM800E6C-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800E6C-66H ● IC . 800A ● VCES . 3300V
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CM800E6C-66H
/-15V
CM800
CM800E6C-66H
bipolar transistor 124 e
mitsubishi The label version
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CM1200HCB-34N
Abstract: TRANSISTOR JC 515 transistor 2955
Text: MITSUBISHI HVIGBT MODULES CM1200HCB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HCB-34N ● IC . 1200A ● VCES . 1700V
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CM1200HCB-34N
CM1200HCB-34N
TRANSISTOR JC 515
transistor 2955
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hvigbt diode
Abstract: No abstract text available
Text: < HVIGBT MODULES > CM1500HG-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage High Insulated Gate Bipolar Transistor Modules CM1500HG-66R IC •······························································· 1500A
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CM1500HG-66R
HVM-1059-A
HVM-1059-A)
hvigbt diode
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MAX4940
Abstract: MAX4940A Q110V
Text: 19-4591; Rev 0; 4/09 TION KIT EVALUA BLE IL AVA A Dual/Quad, Unipolar/Bipolar, High-Voltage Digital Pulsers Features The MAX4940/MAX4940A integrated circuits generate high-voltage, high-frequency, unipolar or bipolar pulses from low-voltage logic inputs. These quad/dual pulsers
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MAX4940/MAX4940A
MAX4940/MAX4940A
T5688-3
MAX4940
MAX4940A
Q110V
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Untitled
Abstract: No abstract text available
Text: 19-4591; Rev 0; 4/09 TION KIT EVALUA BLE IL AVA A Dual/Quad, Unipolar/Bipolar, High-Voltage Digital Pulsers Features The MAX4940/MAX4940A integrated circuits generate high-voltage, high-frequency, unipolar or bipolar pulses from low-voltage logic inputs. These quad/dual pulsers
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MAX4940/MAX4940A
Q110V
T5688-3
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CM1200E4C-34N
Abstract: igbt transistor transistor MJ 2955
Text: MITSUBISHI HVIGBT MODULES CM1200E4C-34N 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200E4C-34N ● IC . 1200A ● VCES . 1700V
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CM1200E4C-34N
19K/kW
42K/kW
/-15V
CM1200E4C-34N
igbt transistor
transistor MJ 2955
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GB100DA60UP
Abstract: GB100D 930-01
Text: GB100DA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel didoes with ultrasoft reverse recovery
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GB100DA60UP
OT-227
2002/95/EC
18-Jul-08
GB100DA60UP
GB100D
930-01
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJE18004D2/D SEMICONDUCTOR TECHNICAL DATA MJE18004D2 D esigner’s Data Sheet POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith In tegrated C o llecto r-E m itter Diode and B uilt-in Efficient
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MJE18004D2/D
MJE18004D2
MJE18004D2
21A-06
O-220AB
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Em itter Diode and Built-in Efficient Antisaturation Netw ork T h e B U D 4 4D 2 is s ta te -o f-a rt High Speed High gain BIPolar transistor H 2B IP .
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BUD44D2
St254
MTP8P10
500nH
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DC MOTOR SPEED CONTROL USING chopper
Abstract: chopper circuits in dc motor PWM CHOPPER TYPE UNIPOLAR STEPPING MOTOR DRIVER motor damping inertia emf siemens motor series 9 siemens motor dc DC Motor motor inertia advantages of 5-phase STEPPER MOTORs 5-phase stepper driver
Text: 3 Motor Driver Designs 3,1 Unipolar Motor Drivers lr unipolar operation, the supply voltage is applied to the motor at one polarity only unipolar mode . The motor can be switched on and off by means of a switch connected in series. Controlled on/off switching
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4729G
DC MOTOR SPEED CONTROL USING chopper
chopper circuits in dc motor
PWM CHOPPER TYPE UNIPOLAR STEPPING MOTOR DRIVER
motor damping inertia emf
siemens motor series 9
siemens motor dc
DC Motor motor inertia
advantages of 5-phase STEPPER MOTORs
5-phase stepper driver
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