1SR35-400A
Abstract: ta7125 marking ROHM
Text: 1SR35-400A Diodes Rectifier diode 1SR35-400A !External dimensions Units : mm !Applications General purpose rectification CATHODE BAND (GREEN) !Features 1) Glass sealed envelope. (GSR) 2) High reliability. φ0.6±0.1 C A 28.0±2 4.3±0.5 28.0±2 Month of manufacture stamped on body in digital marking.
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1SR35-400A
DO-41
1SR35-400A4
1SR35-400A
ta7125
marking ROHM
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF5210 POWER MOSFET -40A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5210 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.
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UF5210
-100V
UF5210
O-220
UF5210L-TA3-T
UF5210G-TA3-T
QW-R502-845
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diode marking code 98
Abstract: ComChip Date code SMD MARKING code ta
Text: Supper Low Capacitance SMD ESD Protection Diode CPDQ5V0USP-HF RoHS Device Halogen Free Features 0402/SOD-923F - IEC61000-4-2 Level 4 ESD protection. 0.041 1.05 0.037(0.95) - ESD Rating of Class 3(>16kV) per Human Body Mode. - Supper low capacitance 0.5 pF Typ.
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0402/SOD-923F
IEC61000-4-2
0402/SOD-923F
MIL-STD-750
QW-JP033
0402/SOD-923
diode marking code 98
ComChip Date code
SMD MARKING code ta
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FDS6676AS
Abstract: FDS6676
Text: FDS6676AS 30V N-Channel PowerTrench SyncFET Features General Description • 14.5 A, 30 V. RDS ON max= 6.0 mΩ @ VGS = 10 V RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V ■ Includes SyncFET Schottky body diode ■ Low gate charge (45nC typical) ■ High performance trench technology for extremely low
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FDS6676AS
FDS6676AS
FDS6676
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Untitled
Abstract: No abstract text available
Text: SMD ESD Protection Diode CPDQ12V0U-HF RoHS Device Halogen Free Features 0402/SOD-923F - IEC61000-4-2 Level 4 ESD protection. - ESD Rating of Class 3 >16kV per Human Body Mode. 0.041(1.05) 0.037(0.95) - Low body height: 0.017”(0.43mm) - Low Leakage 0.033(0.85)
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CPDQ12V0U-HF
0402/SOD-923F
IEC61000-4-2
0402/SOD-923F
MIL-STD-202
001mgram
QW-JP032
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FDS6990AS
Abstract: FDS6990A A1726
Text: FDS6990AS Dual 30V N-Channel PowerTrench SyncFET Features General Description • 7.5 A, 30 V. RDS ON = 22 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
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FDS6990AS
FDS6990AS
FDS6990A
A1726
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Untitled
Abstract: No abstract text available
Text: SMD ESD Protection Diode CPDQ3V3U-HF RoHS Device Halogen Free Features 0402/SOD-923F - IEC61000-4-2 Level 4 ESD protection. - ESD Rating of Class 3 >16kV per Human Body Mode. 0.041(1.05) 0.037(0.95) 0.033(0.85) 0.030(0.75) - Low body height: 0.017”(0.43mm)
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0402/SOD-923F
IEC61000-4-2
0402/SOD-923F
MIL-STD-750,
0402/SOD-923
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di 856
Abstract: di+856
Text: UNISONIC TECHNOLOGIES CO., LTD UF624Z Preliminary Power MOSFET 4.4A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF624Z is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate
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UF624Z
UF624Z
UF624ZL-TN3-T
UF624ZG-TN3-T
UF624ZL-TN3-R
UF624ZG-TN3-R
QW-R502-856
di 856
di+856
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irfh7936pbf
Abstract: 4617
Text: PD -97337A IRFH7936PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg 30V 4.8mΩ@VGS = 10V 17nC Benefits l l l l l
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-97337A
IRFH7936PbF
irfh7936pbf
4617
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Untitled
Abstract: No abstract text available
Text: FDS6699S 30V N-Channel PowerTrench SyncFET Features • 21 A, 30 V General Description Max RDS ON = 3.6 mΩ @ VGS = 10 V Max RDS(ON) = 4.5 mΩ @ VGS = 4.5 V The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.
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FDS6699S
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Untitled
Abstract: No abstract text available
Text: PD -97337A IRFH7936PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg 30V 4.8mΩ@VGS = 10V 17nC Benefits l l l l l
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-97337A
IRFH7936PbF
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Untitled
Abstract: No abstract text available
Text: PD -97337 IRFH7936PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg 30V 4.8mΩ@VGS = 10V 17nC Benefits l l l l l l
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IRFH7936PbF
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FDPF5n50u
Abstract: diode 4A 400v ultra fast
Text: FDPF5N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 4 A, 2.0 Features Description • RDS on = 1.65 (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDPF5N50UT
FDPF5N50UT
50nsec
200nsec
FDPF5n50u
diode 4A 400v ultra fast
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831 SO8 MARKING
Abstract: No abstract text available
Text: ZXMC4559DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET ADVANCE INFORMATION NEW PRODUCT Product Summary Features and Benefits Device V BR DSS RDS(on) max Q2 Q1 60V -60V 55mΩ @ VGS = 10V 105mΩ @ VGS = -10V ID TA = +25°C 4.7A -3.9A • Low Input Capacitance
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ZXMC4559DN8
AEC-Q101
DS34498
831 SO8 MARKING
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Untitled
Abstract: No abstract text available
Text: FDPF5N50NZF N-Channel UniFETTM II FRFET MOSFET 500 V, 4.2 A, 1.75 Features Description • RDS on = 1.57 (Typ.) @ VGS = 10 V, ID = 2.1 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS
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FDPF5N50NZF
100nsec
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Untitled
Abstract: No abstract text available
Text: DMC4047LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device Features and Benefits RDS on max ID TA = +25°C • Low Input Capacitance Low On-Resistance 24mΩ @ VGS = 10V 6.9A Fast Switching Speed 32mΩ @ VGS = 4.5V 6.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
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DMC4047LSD
AEC-Q101
DS36206
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Untitled
Abstract: No abstract text available
Text: FDPF10N60ZUT N-Channel UniFETTM II Ultra FRFETTM MOSFET 600 V, 9 A, 0.8 Features Description • RDS on = 650 m (Typ.) @ VGS = 10 V, ID = 4.5 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and
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FDPF10N60ZUT
FDPF10N60ZUT
50nsec
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Untitled
Abstract: No abstract text available
Text: FDPF5N50NZF N-Channel UniFETTM II FRFET MOSFET 500 V, 4.2 A, 1.75 Features Description • RDS on = 1.57 (Typ.) @ VGS = 10 V, ID = 2.1 A UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and
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FDPF5N50NZF
FDPF5N50NZF
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4n65
Abstract: mosfet 4n65
Text: UNISONIC TECHNOLOGIES CO., LTD 4N65-U Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65-U is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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4N65-U
4N65-U
O-220F1
QW-R502-A71
4n65
mosfet 4n65
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N65-R Preliminary Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65-R is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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4N65-R
4N65-R
O-220F1
QW-R502-A65
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-R Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70-R
4N70-R
O-220F1
QW-R502-A66
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-R Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60-R
4N60-R
O-220F1
QW-R502-A64
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-C Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70-C
4N70-C
4N70L-TFat
QW-R502-A89
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Untitled
Abstract: No abstract text available
Text: FDPF10N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 9 A, 850 m Features Description • RDS on = 710 m (Typ.) @ VGS = 10 V, ID = 4.5 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDPF10N50FT
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200nsec
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