Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF5210 POWER MOSFET -40A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5210 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.
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UF5210
-100V
UF5210
O-220
UF5210L-TA3-T
UF5210G-TA3-T
QW-R502-845
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FDS6990AS
Abstract: FDS6990A A1726
Text: FDS6990AS Dual 30V N-Channel PowerTrench SyncFET Features General Description • 7.5 A, 30 V. RDS ON = 22 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
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FDS6990AS
FDS6990AS
FDS6990A
A1726
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di 856
Abstract: di+856
Text: UNISONIC TECHNOLOGIES CO., LTD UF624Z Preliminary Power MOSFET 4.4A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF624Z is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate
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UF624Z
UF624Z
UF624ZL-TN3-T
UF624ZG-TN3-T
UF624ZL-TN3-R
UF624ZG-TN3-R
QW-R502-856
di 856
di+856
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4n65
Abstract: mosfet 4n65
Text: UNISONIC TECHNOLOGIES CO., LTD 4N65-U Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65-U is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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4N65-U
4N65-U
O-220F1
QW-R502-A71
4n65
mosfet 4n65
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-R Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70-R
4N70-R
O-220F1
QW-R502-A66
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-C Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70-C
4N70-C
4N70L-TFat
QW-R502-A89
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dg1u
Abstract: XD2PA22 XD2PA24 XD2PA12 XD2PA14 ZB2BV6 D1L20 xb2bs8445 ZB2BY4101 xd2pa
Text: Control and signalling units Ø 22 mm fixing Type XB2-B, with chromium plated metal bezel Characteristics Environment Conforming to standards EN 947-5-1 Ambient air temperature Operation : - 25…+ 70 °C Degree of protection IP 65 : Double-headed pushbuttons : IP 40 (IP 65 with sealing boot ZB2-BW008)
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ZB2-BW008)
AC-15
DC-13
XD2-PA22
XD2-PA14
XD2-PA24
40x30
dg1u
XD2PA22
XD2PA24
XD2PA12
XD2PA14
ZB2BV6
D1L20
xb2bs8445
ZB2BY4101
xd2pa
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70K Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70K
4N70K
QW-R502-841
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FDP053N08B
Abstract: No abstract text available
Text: FDP053N08B_F102 N-Channel PowerTrench MOSFET 80V, 120A, 5.3mW Features Description • RDS on = 4.2mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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Untitled
Abstract: No abstract text available
Text: UniFETTM FDP24N40 tm N-Channel MOSFET 400V, 24A, 0.175Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP24N40
FDP24N40
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fdp054n10
Abstract: No abstract text available
Text: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDP054N10
FDP054N10
O-220
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MOSFET 100V
Abstract: No abstract text available
Text: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mW Features Description • RDS on = 4.6mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDP054N10
FDP054N10
O-220
MOSFET 100V
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IRFHM831
Abstract: IRFHM831TRPBF IRFHM831TR2PBF AN-1154 J-STD-020D
Text: PD -97539A IRFHM831PbF HEXFET Power MOSFET VDS 30 V RDS on max 7.8 m Qg (typical) RG (typical) 7.3 0.5 nC ID 40h A (@VGS = 10V) (@Tc(Bottom) = 25°C) : : D 5 4 G D 6 3 S D 7 2 S D 8 1 S PQFN 3.3mm x 3.3mm Applications • Control MOSFET for Buck Converters
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-97539A
IRFHM831PbF
IRFHM831
IRFHM831TRPBF
IRFHM831TR2PBF
AN-1154
J-STD-020D
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Untitled
Abstract: No abstract text available
Text: IRFH7932PbF HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems l l VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits Very low RDS(ON) at 4.5V VGS
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IRFH7932PbF
IRFH7932TRPbF
IRFH7932TR2PbF
078mH,
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Untitled
Abstract: No abstract text available
Text: IRFR4104 IRFU4104 D VDSS = 40V Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS on = 5.5mΩ G ID = 42A S Description Specifically designed for Automotive applications, thi
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IRFR4104
IRFU4104
AN-994
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5V07B
Abstract: No abstract text available
Text: PESD5V0L7BAS; PESD5V0L7BS Low capacitance 7-fold bidirectional ESD protection diode arrays Rev. 4 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description Low capacitance 7-fold bidirectional ESD protection diode arrays in small plastic
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OT505-1
OT96-1
5V07B
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Untitled
Abstract: No abstract text available
Text: IRFR3710Z IRFU3710Z Features l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 100V RDS on = 18mΩ G ID = 42A S Description Specifically designed for Automotive applications, thi
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IRFR3710Z
IRFU3710Z
AN-994.
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Untitled
Abstract: No abstract text available
Text: FDP80N06 N-Channel UniFETTM MOSFET 60 V, 80 A, 10 mΩ Features Description • RDS on = 8.5 mΩ (Typ.) @ VGS = 10 V, ID = 40 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDP80N06
145pF)
O-220
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FDPF5n50u
Abstract: No abstract text available
Text: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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FDP5N50U
FDPF5N50UT
FDPF5n50u
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831 SO8 MARKING
Abstract: No abstract text available
Text: ZXMC4559DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET ADVANCE INFORMATION NEW PRODUCT Product Summary Features and Benefits Device V BR DSS RDS(on) max Q2 Q1 60V -60V 55mΩ @ VGS = 10V 105mΩ @ VGS = -10V ID TA = +25°C 4.7A -3.9A • Low Input Capacitance
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ZXMC4559DN8
AEC-Q101
DS34498
831 SO8 MARKING
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Untitled
Abstract: No abstract text available
Text: UniFETTM FDP19N40 tm N-Channel MOSFET 400V, 19A, 0.24Ω Features Description • RDS on =0.2Ω ( Typ.)@ VGS = 10V, ID = 9.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP19N40
FDP19N40
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FDPF6N60ZUT
Abstract: No abstract text available
Text: UniFE TM FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω Features Description • RDS on = 1.7Ω ( Typ.) @ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar
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FDP6N60ZU
FDPF6N60ZUT
FDPF6N60ZUT
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Untitled
Abstract: No abstract text available
Text: UniFET TM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar
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FDP5N50F
FDPF5N50FT
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FDPF5N50FT
Abstract: No abstract text available
Text: UniFET TM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar
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FDP5N50F
FDPF5N50FT
FDPF5N50FT
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