Untitled
Abstract: No abstract text available
Text: For partial switching PFC Integrated IGBT and Diode Bridge Rectifier SLA5222 Features Package SLA5222 incorporates IGBT and diodes for bridge rectifier of partial switching PFC, and achieves board space reduction. Low Saturation Voltage IGBT Low VF Diode Bridge Rectifier
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SLA5222
SLA5222
SLA5222-DS
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PLCC-20
Abstract: SOIC-16 UC1610 UC2610 UC3610
Text: UC1610 UC2610 UC3610 Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array • Exceptional Efficiency This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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UC1610
UC2610
UC3610
UC1610
PLCC-20
SOIC-16
UC2610
UC3610
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FLYBACK CLAMPING DIODE
Abstract: Schottky Diode 50V 3A DIODE DATABOOK power Schottky bridge Schottky Diode 40V 5A Schottky Diode 40V 5A bridge PLCC-20 SOIC-16 UC1610 UC2610
Text: UC1610 UC2610 UC3610 Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array • Exceptional Efficiency This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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UC1610
UC2610
UC3610
UC1610
100mA
FLYBACK CLAMPING DIODE
Schottky Diode 50V 3A
DIODE DATABOOK
power Schottky bridge
Schottky Diode 40V 5A
Schottky Diode 40V 5A bridge
PLCC-20
SOIC-16
UC2610
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PDF
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Untitled
Abstract: No abstract text available
Text: UC1610 UC2610 UC3610 Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array • Exceptional Efficiency This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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UC1610
UC2610
UC3610
UC3610DW
UC3610DWTR
UC3610N
UC3610Q
UC3610QTR
SSYA008
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5D6 diode
Abstract: No abstract text available
Text: SKN 2F17 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5666 7 (),)(8) ,+'1&/) # 9)(%)1:* %)1&' *&8) ;:1. /'&88 :<8='&1+( >.()&-)- 81=- ?$@ AB +( 56CDE 3FG $HFI &<+-) 1+ 81=$HKI *&1.+-) 1+ 81=-
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B6669ZY
563FG
S566U
65l5I
5D6 diode
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diode V6 57
Abstract: No abstract text available
Text: SKN 60F THYRISTOR BRIDGE,SCR,BRIDGE Stud diode Fast Recovery Rectifier Diode SKN 60F SKR 60F Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5677 8 (),)(9) ,+'1&/) # :)(%)1;* %)1&' *&9) <;1. /'&99 # # ;=9>'&1+( ?.()&-)- 91>-9 @$A BC &=- BD $EFG &=+-) 1+ 91>-H $EIG
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C7S56
Q577R
diode V6 57
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SANKEN BRIDGE DIODE 50A
Abstract: sanken diode
Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC SLA5227 Features ・Built-in IGBT and diode bridge of partial switching PFC circuit Enable to reduce mounting area ・Low saturation voltage IGBT VCE sat = 1.7V max ・Low saturation voltage diode bridge VF = 1.1V max
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TSP70
Abstract: No abstract text available
Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series
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TSP2305A
TSP40GD120P
TSP25G135T
O-247
TSP25GD135T
TSP25G135P
TSP25GD135P
TSP70
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4321F
Abstract: TG12 LT432
Text: LT4321 PoE Ideal Diode Bridge Controller Features Description n n n The LT 4321 is a dual ideal diode bridge controller that enables a Power over Ethernet PoE powered device (PD) to receive power in either voltage polarity from RJ-45 data pairs, spare pairs, or both. The LT4321 and
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LT4321
RJ-45
LT4321
LTC4355
LTC4359
LTC4290/LTC4271
4321f
com/LT4321
4321F
TG12
LT432
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IRF32N50k
Abstract: smd diode UF IRF32N50
Text: Uninterruptible Power Supply Table of Contents AC INPUT SECTION, Diode Bridge. 3 AC INPUT SECTION, Power Factor
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IRFP32N50K
IRFPS40N60K
O-247
LPE-3325
IRF32N50k
smd diode UF
IRF32N50
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LTP120N06
Abstract: No abstract text available
Text: LTP120N06 N-Channel 60V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. • Pb-free lead planting ; RoHS compliant
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LTP120N06
to150
LTP120N06
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cmos 16-bit shift register
Abstract: LTC1650 diode bridge 5v
Text: DESIGN INFORMATION switched output. The monolithic diode bridge is also temperature controlled, providing a bridge offset error below 10µ V, stabilizing the measurement baseline. The temperature control is implemented using uncommitted diodes in the monolithic array as heater
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LTC1650
16-bit
cmos 16-bit shift register
diode bridge 5v
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IR062HD4C10U-P2
Abstract: IR082HD4C10U-P2 IR2106 IR2108
Text: Preliminary Data Sheet No. PD60171 IR062HD4C10U-P2 IR082HD4C10U-P2 HIGH VOLTAGE HALF BRIDGE Features • Output Power IGBT’s in half-bridge configuration • 600V rated breakdown voltage • High side gate drive designed for bootstrap operation • Bootstrap diode integrated into package
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PD60171
IR062HD4C10U-P2
IR082HD4C10U-P2
IR062HD4C10U-P2)
IR082HD4C10U-P2)
IR062HD4C10U-P2
IR082HD4C10U-P2
h90245
IR2106
IR2108
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thyristor JD
Abstract: No abstract text available
Text: BZW 04-5V8 . BZW 04-376B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter - ? 3 , / Absolute Maximum Ratings Symbol Conditions Axial lead diode Unidirectional and
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04-5V8
04-376B
04-5V8.
04-376B
thyristor JD
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M933
Abstract: BZW 10 diode cib 34 73
Text: BZW 06-5V8 . BZW 06-376B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter - ? 3 , / Absolute Maximum Ratings Symbol Conditions Axial lead diode Unidirectional and
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06-5V8
06-376B
06-5V8.
06-376B
M933
BZW 10 diode
cib 34 73
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QF30AA60
Abstract: Darlington 30A QF30AA40 transistor 30A 600v
Text: TRANSISTOR MODULE THREE PHASES BRIDGE TYPE QF30AA40/60 QF30AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from
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QF30AA40/60
QF30AA
400/600V
QF30AA40
QF30AA60
QF30AA40
QF30AA60
Darlington 30A
transistor 30A 600v
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27a diode
Abstract: DIODE 27A power Diode 20A transistor QF20AA40 QF20AA60 vvvf motor 600v 20a diode 4501A
Text: TRANSISTOR MODULE THREE PHASES BRIDGE TYPE QF20AA40/60 QF20AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from
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QF20AA40/60
QF20AA
400/600V
QF20AA40
QF20AA60
QF20AA40
27a diode
DIODE 27A
power Diode 20A
transistor
QF20AA60
vvvf motor
600v 20a diode
4501A
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Untitled
Abstract: No abstract text available
Text: UC1610 UC2610 UC3610 UNITRODE Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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UC1610
UC2610
UC3610
capC1610
UC3610
100mA
030S4
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PDF
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Untitled
Abstract: No abstract text available
Text: UC1610 UC2610 UC3610 UNITROOE Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array • Exceptional Efficiency This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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UC1610
UC2610
UC3610
100mA
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS u im UC1610 UC2610 UC3610 UNITRODE Dual Schottky Diode Bridge FEATURES DESCRIPTION Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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UC1610
UC2610
UC3610
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PDF
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Untitled
Abstract: No abstract text available
Text: y — IN T E G R A T E D C IR C U IT S UC1610 UC3610 UNITRODE DUAL Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection makes this
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UC1610
UC3610
UC3610
ambient40V
UC1611
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PDF
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Untitled
Abstract: No abstract text available
Text: IN T E G R A T E D C IR C U IT S UC1610 UC3610 U N IT R O D E Dual Schottky Diode Bridge DESCRIPTION FEATURES This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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OCR Scan
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UC1610
UC3610
UC1610
DD13D13
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PDF
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Untitled
Abstract: No abstract text available
Text: TR A NSISTO R MODULE three phases bridge type QF20AA40/60 QF20AA is a six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The
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QF20AA40/60
QF20AA
400/600V
7T11243
00021b3
QF20AA
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LOW FORWARD VOLTAGE DROP DIODE BRIDGE
Abstract: hv low current diode CS-299D CS299D Schottky bridge WUI6817157 Schottky Diode 40V 5A dual Schottky Diode 40V 5A bridge Schottky Diode 40V 2A 100-C
Text: C H E R R Y S E M I C O N D U C T O R CORP 1TE D 5Gk755b G0Q1S5Q fl I DUAL SCHOTTKY DIODE BRIDGE DESCRIPTION The CS-299D is an eight-diode array designed for flyback voltage clamping of inductive loads, where high peak current and low duty-cycle conditions exist The dual-bridge configuration makes the CS-299D
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CS-299D
CS-299D
100mA
100-C
WUI6817157
LOW FORWARD VOLTAGE DROP DIODE BRIDGE
hv low current diode
CS299D
Schottky bridge
WUI6817157
Schottky Diode 40V 5A dual
Schottky Diode 40V 5A bridge
Schottky Diode 40V 2A
100-C
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