melf diode code
Abstract: glass mini melf diode mini melf diode Schottky melf BAS85
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAS85 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a grey band Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode
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BAS85
C-120
BAS85Rev121105E
melf diode code
glass mini melf diode
mini melf diode
Schottky melf
BAS85
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAS85 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a grey band Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode
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BAS85
C-120
BAS85Rev121105E
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH SPEED SILICON SWITCHING DIODE CDLL4148 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a black band High Speed Switching Diode ABSOLUTE MAXIMUM RATINGS
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CDLL4148
C-120
CDLL4148Rev
040505E
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MINI-MELF DIODE BLACK CATHODE
Abstract: CDLL4148 mini melf package details
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH SPEED SILICON SWITCHING DIODE CDLL4148 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a black band High Speed Switching Diode ABSOLUTE MAXIMUM RATINGS
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CDLL4148
C-120
CDLL4148Rev
040505E
MINI-MELF DIODE BLACK CATHODE
CDLL4148
mini melf package details
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Hitachi DSA002748
Abstract: mark code e4 diode
Text: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching ADE-208-730 Z Rev 0 Dec. 1, 1998 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a
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HSB0104YP
ADE-208-730
HSB0104YP
Hitachi DSA002748
mark code e4 diode
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HSB0104YP
Abstract: Hitachi DSA0045 43E4
Text: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching ADE-208-730A Z Rev.1 Sep. 2000 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a
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HSB0104YP
ADE-208-730A
HSB0104YP
Hitachi DSA0045
43E4
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mark code e4 diode
Abstract: HSB0104YP
Text: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching ADE-208-730 Z Rev 0 Dec. 1998 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.
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HSB0104YP
ADE-208-730
mark code e4 diode
HSB0104YP
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Marking J30 SOT23
Abstract: 4014C g0750
Text: M O TO R O LA O rder this docum ent by MMBD1010LT1/D SEMICONDUCTOR TECHNICAL DATA L G r e e n i n e MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenUne™ Portfolio of devices with energy-conserving traits. This switching diode has the following features:
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MMBD1010LT1/D
MMBD1010LT1
MMBD2010T1
MMBD3010T1
MBD1010LT1/D
Marking J30 SOT23
4014C
g0750
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MBD-1005
Abstract: 1005LT
Text: MOTOROLA Order this docum ent by MMBD1005LT1/D SEMICONDUCTOR TECHNICAL DATA G L r e e n i n e MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the G reenLine P ortfolio o f devices with e n e rg y -c o n s e rv in g traits. This sw itching diode has the fo llo w in g features:
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MMBD1005LT1/D
MMBD1005LT1
MMBD2005T1
MMBD3005T1
2PHX34592F
MBD1005LT1/D
MBD-1005
1005LT
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MOC263
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by MOC263/D SEMICONDUCTOR TECHNICAL DATA MOC263 Small Outline Optoisolators [CTR = 500% Min] Darlington Output No Base Connection Motorola Preferred Device These devices consist of a gallium arsenide infrared emitting diode optically
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OCR Scan
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MOC263/D
RS481A
S5036.
2PHX34506P-O
MOC263
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1-14K
Abstract: N14 SMD CS1009 LM136 LT1009 LT1009CZ
Text: CS1009 CS1009 2.5 Volt Reference Description The CS1009 is a precision trimmed 2.500V ±5mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on-chip trimming
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CS1009
CS1009
CS1009GZ
LT1009CZ
LM136Z-2
CS1009GD8
CS1009GDR8
CS1009GZ3
CS1009GZR3
1-14K
N14 SMD
LM136
LT1009
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solar panel blocking diode
Abstract: No abstract text available
Text: SPKT1845 SCHOTTKY BARRIER SOLAR RECTIFIER VOLTAGE 45 Volts CURRENT 18 Amperes FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High surge capabitity * High reliability * ideal for solar panel PV application such as By-Pass diode
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SPKT1845
MIL-STD-202E
O-220A
solar panel blocking diode
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Untitled
Abstract: No abstract text available
Text: SPKT1845 SCHOTTKY BARRIER SOLAR RECTIFIER VOLTAGE 45 Volts CURRENT 18 Amperes FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High surge capabitity * High reliability * ideal for solar panel PV application such as By-Pass diode
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SPKT1845
O-220A
MIL-STD-202E
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Untitled
Abstract: No abstract text available
Text: SPKT1845 SCHOTTKY BARRIER SOLAR RECTIFIER VOLTAGE 45 Volts CURRENT 18 Amperes FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High surge capabitity * High reliability * ideal for solar panel PV application such as By-Pass diode
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SPKT1845
O-220A
MIL-STD-202E
04MAX.
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SDM4066
Abstract: No abstract text available
Text: 836860 2 SOL ITRON D E VI CE S INC -r- 3 95D 02839 S0LITR0N DEVICES INC DF|ö3t.fibOE 000203^ S T W « » © i r © Ä ? Ä IL HIGH VOLTAGE, FAST SWITCHING Devices. Inc. NPN TRIPLE DIFFUSED DARLINGTON CHIP NUMBER WITH STABILIZING RESISTORS AND INTEGRATED BY-PASS DIODE
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SDM4066,
SDM4067
SDM4066
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zener diode 1NU 9F
Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Text: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:
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BCE0001A
BCE0001B
zener diode 1NU 9F
diode 1NU
DLA DIODE TOSHIBA
diode 1NU 7.1
NH5 Diode
Schottky diode TO220 15A 1000V
diode 1NU 5.1
diode 1NU 6F
10lc48
GU 1R5
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14kW
Abstract: smd LT1009 smd n10 1009C LT1009CZ N14 SMD CS-1009CZ LM136 LT1009 n8n6
Text: CS-1009 CS-1009 2.5 Volt Reference Description The CS-1009 is a precision trimmed 2.500V ±5mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on-chip trimming
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CS-1009
CS-1009
CS-1009CZ
LT1009CZ
LM136Z-2
CS-1009CD8
CS-1009XD8
CS-1009XZ
14kW
smd LT1009
smd n10
1009C
N14 SMD
CS-1009CZ
LM136
LT1009
n8n6
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IN3070
Abstract: 1N493A 1N3070 JANTX HA 4016 1N3070 1N3070-1 1N3070UR-1 1N4938UR-1 DIODE EJL
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 Aug 94. MIL-S-19500/169H 19 Mav 1994 SUPERSEDING MIL-S-19500/169G 30 July 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING,
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MIL-S-19500/169H
MIL-S-19500/169G
1N3070,
1N3070-1,
1N3070UR-1,
1N49M,
1N493A-1,
1N4938UR-1
MIL-S-19500.
JANCA4938)
IN3070
1N493A
1N3070 JANTX
HA 4016
1N3070
1N3070-1
1N3070UR-1
DIODE EJL
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567d
Abstract: 1N6492 1N6492U4
Text: INCH-POUND MIL-PRF-19500/567D 8 February 2008 SUPERSEDING MIL-PRF-19500/567C 12 September 2003 The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 May 2008. PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON,
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MIL-PRF-19500/567D
MIL-PRF-19500/567C
1N6492,
1N6492U4,
MIL-PRF-19500.
567d
1N6492
1N6492U4
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GL6ZS27
Abstract: No abstract text available
Text: PREPARED BY: DATE: I 1 SPEC.No. ELECTRONIC COMPONENTS GROUP SHARPCORPORATION I SPiXIFICATION DEVICE SPECIFICATION Ix996047 Opto-Ekctronic Devices Division FOR Light Emitting Diode MODEL No. GL6ZS27 1 1. These specification sheets include materials protected under the copyright of Sharp Corporation “Sharp” .
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Ix996047
GL6ZS27
DG996047
t02mm
GL6ZS27
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Untitled
Abstract: No abstract text available
Text: INCH-POUND MIL-PRF-19500/118H 19 July 2007 SUPERSEDING MIL-PRF-19500/118G 22 June 2006 The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 October 2007. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON,
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MIL-PRF-19500/118H
MIL-PRF-19500/118G
1N483B,
1N485B,
1N486B,
1N5194,
1N5194UR,
1N5194US,
1N5195,
1N5195UR,
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1N6683
Abstract: 1N6685 1N6685US 1N6684 1N6640US
Text: The documentation process conversion measures necessary to comply with this revision shall be completed by 6 February 1998 METRIC MIL-PRF-19500/625A 6 November 1997 SUPERSEDING MIL-S-19500/625 15 July 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING
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MIL-PRF-19500/625A
MIL-S-19500/625
1N6683,
1N6684,
1N6685,
1N6683US,
1N6684US,
1N6685US
1N6683
1N6685
1N6685US
1N6684
1N6640US
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Untitled
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 2006. INCH-POUND MIL-PRF-19500/117P 25 July 2006 SUPERSEDING MIL-PRF-19500/117N 6 October 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
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MIL-PRF-19500/117P
MIL-PRF-19500/117N
1N962B-1
1N992B-1,
1N962BUR-1
1N992BUR-1,
1N962C-1
1N992C-1,
1N962CUR-1
1N992CUR-1,
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1N5623A
Abstract: 1N5615 1N5615US 1N5617 1N5617US 1N5619 1N5619US 1N5621 1N5621US 1N5623
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 November 2008. INCH-POUND MIL-PRF-19500/429L 7 August 2008 SUPERSEDING MIL-PRF-19500/429K 8 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/429L
MIL-PRF-19500/429K
1N5615,
1N5617,
1N5619,
1N5621,
1N5623,
1N5615US,
1N5617US,
1N5619US,
1N5623A
1N5615
1N5615US
1N5617
1N5617US
1N5619
1N5619US
1N5621
1N5621US
1N5623
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