Untitled
Abstract: No abstract text available
Text: BYQ28X-200 Dual ultrafast rugged rectifier diode Rev. 02 — 5 February 2009 Product data sheet 1. Product profile 1.1 General description Dual ultrafast epitaxial rectifier diodes in a SOT186A TO-220F isolated plastic package. 1.2 Features and benefits
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BYQ28X-200
OT186A
O-220F)
BYQ28X-200
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BYQ28X-200
Abstract: BYQ28X200 BYQ28X TH92 BYQ28X-200,127
Text: BYQ28X-200 Dual ultrafast rugged rectifier diode Rev. 02 — 5 February 2009 Product data sheet 1. Product profile 1.1 General description Dual ultrafast epitaxial rectifier diodes in a SOT186A TO-220F isolated plastic package. 1.2 Features and benefits
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BYQ28X-200
OT186A
O-220F)
BYQ28X-200
BYQ28X200
BYQ28X
TH92
BYQ28X-200,127
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRD1035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
1n5822 trr
A14F diode
FR105 diode
MR850
diode A14A
BYV27 200 TAP
LT2A02
MBR3100 0630
1N4007 sod-123
SES50
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mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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MBRB1045
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
mur1650
T4 SOD-123 1N4004
MR2510
1N2069
SES5001
mur420 equivalent
CT PR1504
equivalent for fr302 diode
mur 460 switch
diode A14A surface mount
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FE16B
Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —
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MBRP60035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
FE16B
mbr3045pt transistor
FR102 SOD-123
1N4007 sod-123
BYV43-45
BYV19-45
MUR1660CT equivalent
MUR460 BL
FEP16DT 0032
mur420 equivalent
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PK MUR 460
Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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MBR340
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
PK MUR 460
pk mur460
PK MUR460 1110
gi756 diode
carrier 30bq015
USD1120
0525 Transient Voltage Suppressors
diode A14A surface
SS14 SOD123
MBRD360
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MR2835S equivalent
Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045PT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
MR2835S equivalent
A14F diode
1n5404 diode
FE16A
MUR860 equivalent
MUR1620CT
MUR420 diode
usd745c equivalent
MBRD360
PR1502
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equivalent components of diode 1N5399
Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045WT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
equivalent components of diode 1N5399
diode ses5001
6A10 BL diode
equivalent for fr302 diode
equivalent components of diode her104
fe8b diode
FE8D
gi756 diode
A14F diode
MUR420 diode
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PBYR1525CT
Abstract: "Power Semiconductor Applications" Philips "transmission Line Protection" LOW FORWARD VOLTAGE DROP DIODE RECTIFIER pbyr1525 power diode package BY479X-1700 BY559-1500 BYV116 BYV118X
Text: Philips Semiconductors Power Diodes NEW PRODUCTS Philips Semiconductors are working intensively on bringing new Power Diode products to the market. The products listed below appear for the first time in this data handbook. 25 V SCHOTTKY DIODES A range of low voltage schottky diodes with a reverse
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BYV116,
PBYR225CT,
PBYR1025,
PBYR1525CT,
PBYR2025CT,
PBYR2525CT.
PBYR1525CT
"Power Semiconductor Applications" Philips
"transmission Line Protection"
LOW FORWARD VOLTAGE DROP DIODE RECTIFIER
pbyr1525
power diode package
BY479X-1700
BY559-1500
BYV116
BYV118X
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BYQ28
Abstract: BYQ28E Series BYQ28E diode 119
Text: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ28E series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency rugged dual rectifier diodes in a plastic envelope, featuring low forward voltage drop, ultra-fast
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BYQ28E
O220AB
BYQ28
BYQ28E Series
diode 119
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BYQ28
Abstract: BYQ28F
Text: Philips Semiconductors Product specification Rectifier diodes ultrafast BYQ28F series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency dual rectifier diodes in a full pack plastic envelope, featuring low forward voltage drop, ultra-fast recovery
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BYQ28F
OT186
BYQ28FRepetitive
BYQ28
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BYQ28E
Abstract: BYQ28EF UG10 UGF10 BYQ28EB-200HE3
Text: BYQ28E F,B -100 thru BYQ28E(F,B)-200, UG(F,B)10BCT thru UG(F,B)10DCT Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES ITO-220AB TO-220AB • Glass passivated chip junction • Ultrafast recovery times • Soft recovery characteristics
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BYQ28E
10BCT
10DCT
ITO-220AB
O-220AB
BYQ28E
BYQ28EF
UGF10
O-263AB
BYQ28EF
UG10
UGF10
BYQ28EB-200HE3
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BYQ28E
Abstract: JESD22-B102 J-STD-002 ug10dct
Text: BYQ28E F,B -100 thru BYQ28E(F,B)-200, UG(F,B)10BCT Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction ITO-220AB TO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency
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BYQ28E
10BCT
ITO-220AB
O-220AB
BYQ28E
BYQ28EF
UGF10
J-STD-020,
O-263AB
JESD22-B102
J-STD-002
ug10dct
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Untitled
Abstract: No abstract text available
Text: BYQ28E F,B -100 thru BYQ28E(F,B)-200, UG(F,B)10BCT Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction ITO-220AB TO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency
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BYQ28E
10BCT
O-220AB
ITO-220AB
J-STD-020,
O-263AB
ITO-220AB
2002/95/EC
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BYQ28
Abstract: BYQ28X diode BYq28
Text: Philips Semiconductors Product specification Rectifier diodes ultrafast BYQ28X series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated dual epitaxial rectifier diodes in a full pack plastic envelope, featuring low forward voltage drop, ultra-fast recovery
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BYQ28X
OT186A
BYQ28XRepetitive
BYQ28
diode BYq28
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BYQ28E
Abstract: BYQ28EF UG10 UGF10 ug DIODE ON
Text: BYQ28E F,B -100 thru BYQ28E(F,B)-200, UG(F,B)10BCT thru UG(F,B)10DCT Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES ITO-220AB TO-220AB • Glass passivated chip junction • Ultrafast recovery times • Soft recovery characteristics
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BYQ28E
10BCT
10DCT
ITO-220AB
O-220AB
BYQ28E
BYQ28EF
UGF10
BYQ28EF
UG10
UGF10
ug DIODE ON
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Untitled
Abstract: No abstract text available
Text: BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES TO-220AB ITO-220AB 2 3 1 1 BYQ28E, UG10 2 3 BYQ28EF, UGF10 PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 PIN 2
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BYQ28E-xxx,
BYQ28EF-xxx,
BYQ28EB-xxx,
UG10xCT,
UGF10xCT,
UGB10xCT
O-220AB
ITO-220AB
BYQ28E,
BYQ28EF,
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Untitled
Abstract: No abstract text available
Text: BYQ28E F,B -100 thru BYQ28E(F,B)-200, UG(F,B)10BCT Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction ITO-220AB TO-220AB • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency
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BYQ28E
10BCT
O-220AB
ITO-220AB
J-STD-020,
O-263AB
ITO-220AB
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: PREFACE NEW PRODUCTS Philips Semiconductors are working intensively on bringing new Power Diode products to the market. The products listed below appear for the first time in this data handbook. 25 V SCHOTTKY DIODES A range of low voltage schottky diodes with a reverse
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BR211
BR211SM
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes BYQ28EB series ultrafast, rugged_ _ GENERAL DESCRIPTION Glass passivated dual epitaxial rectifier diodes in a plastic envelope suitable for surface mounting,
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BYQ28EB
OT404
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BYQ28
Abstract: ultra fast recovery time diode
Text: BYQ28 SERIES \ _ ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft recovery characteristic. They are intended for
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BYQ28
ultra fast recovery time diode
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diode BYq28
Abstract: No abstract text available
Text: SbE D • 711005b DG412DD 171 ■ P H I N BYQ28 SERIES •h i l i p s T-03'17 SbE ] international ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forw ard voltage drop, u ltra fast reverse recovery times and soft recovery characteristic. They are intended fo r
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711005b
DG412DD
BYQ28
711Dfi2b
DD412D7
M1719
7110fl5b
711002b
diode BYq28
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 25E D •I bh53T31 0022405 4 ■ BYQ28F SERIES T - O'S-J'7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, very fast reverse recovery times and soft-recovery
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bh53T31
BYQ28F
OT-186
T-03-17
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