DIODE C06-15
Abstract: DIODE C06 15 DIODE C06-13
Text: Technische Information / technical information IGBT-Module IGBT-modules FS300R17KE3 EconoPACK + Modul mit Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™+ module with trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
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FS300R17KE3
CBB32
CBB326
223DB
2313BCBC
A3265C
C14BC
DIODE C06-15
DIODE C06 15
DIODE C06-13
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2NU diode
Abstract: LTC4098-3.6 DIODE C06-15
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM400GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM400GA120DLC
36134B6
61FA3265
2NU diode
LTC4098-3.6
DIODE C06-15
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MO-193-C
Abstract: No abstract text available
Text: Si3812DV Vishay Siliconix N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.125 at VGS = 4.5 V 2.4 0.200 at VGS = 2.5 V 1.8 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage IF (A)
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Si3812DV
2002/95/EC
Si3812DV-T1-GE3
11-Mar-11
MO-193-C
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si3812
Abstract: No abstract text available
Text: Si3812DV Vishay Siliconix N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.125 at VGS = 4.5 V 2.4 0.200 at VGS = 2.5 V 1.8 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage IF (A)
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Si3812DV
2002/95/EC
Si3812DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si3812
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Untitled
Abstract: No abstract text available
Text: Si3812DV Vishay Siliconix N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.125 at VGS = 4.5 V 2.4 0.200 at VGS = 2.5 V 1.8 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage IF (A)
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Si3812DV
2002/95/EC
Si3812DV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4830ADY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30
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Si4830ADY
Si4830DY
2002/95/EC
Si4830ADY-T1-E3
Si4830ADY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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TDB6HK180N16RR
Abstract: 6a65
Text: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK180N16RR_B11 Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !325CEF36"#E$% 6D13BC1322C14BBB& ' 6*6+,231336134$62332C364&3
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TDB6HK180N16RR
CEF36"
3BC1322C14BB
32C36
36423B
4256E
D6345
6423B
36423B
6a65
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Untitled
Abstract: No abstract text available
Text: Si4830ADY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30
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Si4830ADY
Si4830DY
2002/95/EC
Si4830ADY-T1-E3
Si4830ADY-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si4830ADY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30
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Si4830ADY
Si4830DY
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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DIODE C06-15
Abstract: c06-15 DIODE C06 15 DIODE C06 C06-15 diode C0615 DIODE C06-15 75 erc06 c06 15
Text: ERC06 1.5A (1300V to 1500V / 1.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. 30 MIN. Features Most suitable for color T.V. damper Marking High voltage by mesa design High reliability Color code : Blue Applications C06 15 Abridged type name
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ERC06
DIODE C06-15
c06-15
DIODE C06 15
DIODE C06
C06-15 diode
C0615
DIODE C06-15 75
erc06
c06 15
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1.5SMC27AT3G
Abstract: No abstract text available
Text: Document Number: MMG1001NT1 Rev. 8, 3/2007 Freescale Semiconductor Technical Data Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology
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MMG1001NT1
DataMMG1001NT1
1.5SMC27AT3G
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crcw06031000fkta
Abstract: ZENER DIODE t2 CRCW06031200FKTA Chip Resistors Mounting GaAs FET chip HK160822NJ-T A113 CTB112 CRCW06032001FKTA MMG1001NT1
Text: Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 8, 3/2007 Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology
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MMG1001NT1
DataMMG1001NT1
crcw06031000fkta
ZENER DIODE t2
CRCW06031200FKTA
Chip Resistors Mounting
GaAs FET chip
HK160822NJ-T
A113
CTB112
CRCW06032001FKTA
MMG1001NT1
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crcw06031000fkta
Abstract: CRCW06035600FKTA ZENER MARKING r12 A113 CTB112 CTB132 MMG1001NT1 XMD112 XMD132 5.1 v zener
Text: Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 8, 3/2007 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection
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MMG1001NT1
DataMMG1001NT1
crcw06031000fkta
CRCW06035600FKTA
ZENER MARKING r12
A113
CTB112
CTB132
MMG1001NT1
XMD112
XMD132
5.1 v zener
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crcw06031000fkta
Abstract: CRCW06031200FKTA CRCW06030000FKTA CRCW06032001FKTA GaAs FET chip A113 CTB112 CTB132 MMG1001NT1 XMD112
Text: Freescale Semiconductor Technical Data Gallium Arsenide CATV Integrated Amplifier Module LIFETIME BUY Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology
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MMG1001NT1
crcw06031000fkta
CRCW06031200FKTA
CRCW06030000FKTA
CRCW06032001FKTA
GaAs FET chip
A113
CTB112
CTB132
MMG1001NT1
XMD112
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Untitled
Abstract: No abstract text available
Text: PAC DN017 CALIFORNIA MICRO DEVICES 18 CHANNEL ESD PROTECTION ARRAY WITH ZENER SUPPLY CLAMP Features 18-channel ESD protection Integral Zener diode clamp to suppress supply rail transients 15KV ESD protection HBM 15KV contact discharge ESD protection
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DN017
18-channel
24-pin
DN017
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N017Q
Abstract: 15KV AP209 DN017 IEC-61000-4-2
Text: PAC DN017 CALIFORNIA MICRO DEVICES 18 CHANNEL ESD PROTECTION ARRAY WITH ZENER SUPPLY CLAMP Features 18-channel ESD protection Integral Zener diode clamp to suppress supply rail transients 15KV ESD protection HBM 15KV contact discharge ESD protection
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DN017
18-channel
24-pin
DN017
N017Q
15KV
AP209
IEC-61000-4-2
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A113
Abstract: CTB112 CTB132 XMD112 XMD132
Text: Freescale Semiconductor Technical Data Document Number: MMG2001NT1 Rev. 6, 3/2007 Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection • GaAs FET Transistor Technology
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MMG2001NT1
A113
CTB112
CTB132
XMD112
XMD132
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AP209
Abstract: DN017 15KV IEC-61000-4-2 Zener Diodes 300v N017Q
Text: PAC DN017 CALIFORNIA MICRO DEVICES 18 CHANNEL ESD PROTECTION ARRAY WITH ZENER SUPPLY CLAMP Features 18-channel ESD protection Integral Zener diode clamp to suppress supply rail transients 15KV ESD protection HBM 15KV contact discharge ESD protection
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DN017
18-channel
24-pin
DN017
AP209
15KV
IEC-61000-4-2
Zener Diodes 300v
N017Q
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CSRS045V0P-HF
Abstract: ComChip Date code smd DIODE code marking 20A smd diode 319 SOT-143 MARKING DIODE C06 15 DIODE C06 15 62 sot143 Marking code c06 smd code diode 20a code a1 SMD
Text: Comchip Low Capacitance ESD Protection Array SMD Diode Specialist CSRS045V0P-HF RoHS Device Halogen Free SOT-143 Features 0.120 3.04 0.110(2.80) ESD Protected for 2 high speed I/O ports IEC61000-4-2 (ESD) ±8kV (Contact) ,±15kV(Air). 0.080(2.02) 0.071(1.80)
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CSRS045V0P-HF
IEC61000-4-2
IEC61000-4-4
5/50ns)
IEC61000-4-5
8/20uS)
OT-143
OT-143
MIL-STD-750
CSRS045V0P-HF
ComChip Date code
smd DIODE code marking 20A
smd diode 319
SOT-143 MARKING
DIODE C06 15
DIODE C06 15 62
sot143 Marking code c06
smd code diode 20a
code a1 SMD
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DIODE C06-15
Abstract: DIODE C06 15 c06 15 c06-15 DIODE C06-15 75 DIODE C06-15 07
Text: ERC06 1.5A (1300V to 1500V / 1.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. 30 MIN. Features Most suitable for color T.V. damper Marking High voltage by mesa design High reliability Color code : Blue Applications Voltage class
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ERC06
bs1300
Sto300V
DIODE C06-15
DIODE C06 15
c06 15
c06-15
DIODE C06-15 75
DIODE C06-15 07
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DIODE C06-15
Abstract: DIODE C06 15 C06-15 diode c06 15 c06-15 DIODE C06-15 75 DIODE C06 ERC06 C0615
Text: ERC06 1.5A (1300V to 1500V / 1.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. 30 MIN. Features Most suitable for color T.V. damper Marking High voltage by mesa design High reliability Color code : Blue Applications Voltage class
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ERC06
15haracteristics
DIODE C06-15
DIODE C06 15
C06-15 diode
c06 15
c06-15
DIODE C06-15 75
DIODE C06
ERC06
C0615
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Untitled
Abstract: No abstract text available
Text: Comchip Low Capacitance ESD Protection Array SMD Diode Specialist CSRS045V0P-HF RoHS Device Halogen Free SOT-143 Features 0.120 3.04 0.110(2.80) ESD Protected for 2 high speed I/O ports IEC61000-4-2 (ESD) ±8kV (Contact) ,±15kV(Air). 0.038(0.96)BSC 0.080(2.02)
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CSRS045V0P-HF
OT-143
IEC61000-4-2
IEC61000-4-4
5/50ns)
IEC61000-4-5
8/20uS)
OT-143
QW-JP002
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CD621215
Abstract: No abstract text available
Text: CD62_ _15 CD67_15_ Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/Diode POW-R-BLOK Module 150 Amperes/1600 Volts Description: CD62 15, CD67 15 SCR/Diode POW-R-BLOK™ Module 150 Amperes/1600 Volts Powerex SCR/Diode Modules are
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Amperes/1600
MAX/10
CD621215
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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