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    DIODE CHIP 1N4148 Search Results

    DIODE CHIP 1N4148 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    1N4148WT Toshiba Electronic Devices & Storage Corporation Switching Diode, 100 V, 0.25 A, SOD-523 Visit Toshiba Electronic Devices & Storage Corporation
    1N4148WS Toshiba Electronic Devices & Storage Corporation Switching Diode, 100 V, 0.25 A, 2 in 1, SOD-323 Visit Toshiba Electronic Devices & Storage Corporation
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    DIODE CHIP 1N4148 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2KG028075YQ 2KG028075YQ SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG028075YQ is a high speed switching diode chip fabricated in planar technology. Ø This chip can be encapsulated as 1N4148 switching diode. Ø When the chip is selected glass package, the chip thickness


    Original     		2KG028075YQ 2KG028075YQ 1N4148 2KG028XXX PDF

    Untitled

    Abstract: No abstract text available
    Text: 2KG026075YQ 2KG026075YQ SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG026075YQ is a high speed switching diode chip fabricated in planar technology. Ø This chip can be encapsulated as 1N4148 switching diode. Ø When the chip is selected glass package, the chip thickness


    Original     		2KG026075YQ 2KG026075YQ 1N4148 2KG026XXX 100mA. PDF

    Untitled

    Abstract: No abstract text available
    Text: 2KG026075JL 2KG026075JL SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG026075JL is a high speed switching diode chip fabricated in planar technology. Ø This chip can be encapsulated as 1N4148 switching diode. Ø This chip has several thicknesses, suit for different plastic


    Original     		2KG026075JL 2KG026075JL 1N4148 2KG026XXX 100mA. PDF

    Untitled

    Abstract: No abstract text available
    Text: 2KG028075JL 2KG028075JL SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG028075JL is a high speed switching diode chip fabricated in planar technology. Ø This chip can be encapsulated as 1N4148 switching diode. Ø This chip has several thicknesses, can suit for different


    Original     		2KG028075JL 2KG028075JL 1N4148 2KG028XXX 100mA. PDF

    Untitled

    Abstract: No abstract text available
    Text: 2KG023075JL 2KG023075JL SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG023075JL is a high speed switching diode chip fabricated in planar technology. Ø This chip can be encapsulated as 1N4148 switching diode. Ø This chip has several thicknesses, can suit for different


    Original     		2KG023075JL 2KG023075JL 1N4148 2KG023XXX 100mA. PDF

    1n4148 die chip

    Abstract: 1N4148
    Text: 2KG026075JL 2KG026075JL SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG026075JL is a high speed switching diode chip for plastic package fabricated in planar technology. Ø The chip can be encapsulated as 1N4148 switching diode. Ø The chip has several thicknesses for choice, the


    Original     		2KG026075JL 2KG026075JL 1N4148 2KG026XXX 2KG026075JL-155 1n4148 die chip 1N4148 PDF

    1n4148 die chip

    Abstract: 1N4148
    Text: 2KG028075JL 2KG028075JL SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG028075JL is a high speed switching diode chip for plastic package fabricated in planar technology. Ø The chip can be encapsulated as 1N4148 switching diode. Ø The chip has several thicknesses for choice, the top


    Original     		2KG028075JL 2KG028075JL 1N4148 2KG028XXX 2KG028075JL-155 1n4148 die chip PDF

    Untitled

    Abstract: No abstract text available
    Text: 2KG028075JL_Datasheet 2KG028075JL SWITCHING DIODE CHIPS DESCRIPTION ¾ 2KG028075JL is a high speed switching diode chip for plastic package fabricated in planar technology. ¾ The chip can be encapsulated as 1N4148 switching diode. ¾ The chip has several thicknesses for choice, the top


    Original     		2KG028075JL 1N4148 2KG028XXX 2KG028075JL 2KG028075JL-155 PDF

    DIODE CHIP 1N4148

    Abstract: 1N4148 silan
    Text: 2KG028075YQ 2KG028075YQ SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG028075YQ is a high speed switching diode chip for glass package fabricated in planar technology. Ø This chip can be encapsulated as 1N4148 switching diode. Ø The chip thickness is 120µm, and the top electrodes


    Original     		2KG028075YQ 2KG028075YQ 1N4148 2KG028XXX DIODE CHIP 1N4148 silan PDF

    DIODE CHIP 1N4148

    Abstract: 1N4148 1N4148 chip
    Text: 2KG026075YQ 2KG026075YQ SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG026075YQ is a high speed switching diode chip for glass package fabricated in planar technology Ø This chip can be encapsulated as 1N4148 switching diode. Ø For the glass package, the top electrodes material is Ag


    Original     		2KG026075YQ 2KG026075YQ 1N4148 2KG026XXX 100mA. DIODE CHIP 1N4148 1N4148 chip PDF

    1N4148 1206

    Abstract: 1N4148 0603 1N4148 0805 1n4148 LL34 RM 1206 FHD4148 DIODE CHIP 1N4148 DIODE 1N4148 LL-34
    Text: THICK FILM CHIP SWITHING DIODE THICK FILM CHIP SWITCHING DIODE FEATURES ROHS RoHS compliant 1N4148 The electrical performance is equal as that of 1N4148. Available for mass production,can help to reduce cost. With improved chip shape which can effectively reduce the pick up error during high speed SMT.


    Original     		1N4148 1N4148. FHD41481206 LL-34 GB/4589 1N4148 1206 1N4148 0603 1N4148 0805 1n4148 LL34 RM 1206 FHD4148 DIODE CHIP 1N4148 DIODE 1N4148 LL-34 PDF

    1N4148 chip

    Abstract: DIODE CHIP 1N4148 1n4148 die 1n4148 1n4148 die chip 1N4148.1N4448 CPD83V DIODE R3 1N4154 1N4448
    Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x11 MILS Die Thickness 7.1MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å


    Original     		CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 1N4148 chip DIODE CHIP 1N4148 1n4148 die 1n4148 1n4148 die chip 1N4148.1N4448 CPD83V DIODE R3 1N4154 1N4448 PDF

    diode S 335

    Abstract: 1n4148 die 1n4148 1n4148 die chip 1N4154 1N4448 1N4454 1N914 DIODE CHIP 1N4148 CMPD2836
    Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.35 x 3.35 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å


    Original     		CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 diode S 335 1n4148 die 1n4148 1n4148 die chip 1N4154 1N4448 1N4454 1N914 DIODE CHIP 1N4148 CMPD2836 PDF

    1n4148

    Abstract: 1n4148 die chip DIODE CHIP 1N4148 1N4148.1N4448 1N4154 1N4448 1N4454 1N914 1N914B CMPD4448
    Text: PROCESS CPD63 Central Switching Diode TM Semiconductor Corp. High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization


    Original     		CPD63 CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 1n4148 1n4148 die chip DIODE CHIP 1N4148 1N4148.1N4448 1N4154 1N4448 1N4454 1N914 1N914B CMPD4448 PDF

    1n4148 die

    Abstract: DIODE CHIP 1N4148 1n4148 die chip 1N4148.1N4448 1n914 equivalent 1N4454 1N4148 CMPD914 1N914B 1N4148 chip
    Text: PROCESS CPD63 Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å


    Original     		CPD63 CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 1n4148 die DIODE CHIP 1N4148 1n4148 die chip 1N4148.1N4448 1n914 equivalent 1N4454 1N4148 CMPD914 1N914B 1N4148 chip PDF

    1n4148 die chip

    Abstract: 1n4448 die chip CMPD914 CPD83V DIODE CHIP 1N4148 1n4148 1n4154 diode 1n914 1n4148 die 1N914 DIE
    Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å


    Original     		CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 1n4148 die chip 1n4448 die chip CPD83V DIODE CHIP 1N4148 1n4148 1n4154 diode 1n914 1n4148 die 1N914 DIE PDF

    CMPD2836

    Abstract: CMPD2838 CMPD914 1N4454 CMPD7000 1N4148.1N4448 1N4148 1N4154 1N4448 1N914
    Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å


    Original     		CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 CMPD2836 CMPD2838 CMPD914 1N4454 CMPD7000 1N4148.1N4448 1N4148 1N4154 1N4448 1N914 PDF

    CD4148

    Abstract: DIODE CHIP 1N4148 1N4148.N JEDEC 1N4148 1N4148 diode switching cd4148
    Text: SWITCHING CHIP DIODE Data Sheet Mechanical Dimensions CD4148 Description Features n ELECTRICALLY IDENTICAL TO JEDEC 1N4148 n INDUSTRY STANDARD 1206 PACKAGE n 350 mW POWER DISSIPATION Electrical Characteristics @ 25 O C. Maximum Ratings Peak Reverse Voltage.VRM


    Original     		CD4148 1N4148 CD4148 DIODE CHIP 1N4148 1N4148.N JEDEC 1N4148 1N4148 diode switching cd4148 PDF

    cd 5411

    Abstract: 1N4148, general purpose signal diode datasheets diode 1n4148 1N4148 28-10 axial diode 1N4148 silicon diodes
    Text: 1N4148 Small Signal Diode Features: • High speed silicon switching diodes, axial leaded. • General purpose, industrial, military and space applications. • Hermetically sealed glass with a stud on either side of the glass passivated chip provides excellent stability.


    Original     		1N4148 DO-35 cd 5411 1N4148, general purpose signal diode datasheets diode 1n4148 1N4148 28-10 axial diode 1N4148 silicon diodes PDF

    1N4148 JANTX

    Abstract: DIODE LN4148 1N4148 JANTXV 1N4148 JAN 1n4148 unitrode 1N4148-1 UNITRODE in4148 JANTXV 1N4148 LN4148 diode 1N4148
    Text: COMPUTER DIODE JAN, JANTX, 1N914 JAN, JANTX, JANTXV 1N4148 JAN, JANTX, JANTXV 1N4148-1 General Purpose Switching FEATURES • Metallurgical Bond • Qualified to MIL-S-19500/116 • Planar Passivated Chip • DO-35 Package • Non-JAN Available DESCRIPTION


    OCR Scan     		1N914 1N4148 1N4148-1 MIL-S-19500/116 DO-35 1N914. 1N4148 JANTX DIODE LN4148 1N4148 JANTXV 1N4148 JAN 1n4148 unitrode 1N4148-1 UNITRODE in4148 JANTXV 1N4148 LN4148 diode PDF

    specification diode 4148

    Abstract: 1N4148 1N4148 derating diode do35 C 4148 4148 diode axial
    Text: Transys Electronics L I M I T E D HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD 1N4148 DO-35, 500mW MARKING: Cathode band + 4148 no body coat General purpose applications. Hermetically sealed glass and the glass passivated chip Provides excellent stability.


    Original     		1N4148 DO-35, 500mW DO-35 specification diode 4148 1N4148 1N4148 derating diode do35 C 4148 4148 diode axial PDF

    1N4148 minimelf

    Abstract: DIODE 1N4148 LL-34 1n4148 melf package glass mini melf diode 1n4148 LL34 1N4148 ll-34 100MHZ 1N4148 MM4148
    Text: MM4148 1N4148 mini-M.E.L.F. SIGNAL DIODE Mechanical Data Items Material Package mini MELF Case Hermetically sealed glass Lead/Finish Chip Double stud/Tin Plating Glass Passivated Mini MELF LL-34 , SOD - 80C Hermetically Sealed, Glass Silicon Diodes Absolute Maximum Ratings (Ta=25 oC)


    Original     		MM4148 1N4148 LL-34) 100uA 100MHZ, 1N4148 minimelf DIODE 1N4148 LL-34 1n4148 melf package glass mini melf diode 1n4148 LL34 1N4148 ll-34 100MHZ MM4148 PDF

    1n4148 melf package

    Abstract: glass passivated junction SOD323
    Text: WILLAS SCS LS4148 VOLT 0.1AMP Schott 1N4148 Quadro MELF SIGNAL DIODE Pb Free Product SO Qu ad r o ME L F .012 1.5 +/-0.1 MECHANICAL DATA Mechanical Data Items Package Case Lead/Finish Chip * Terminal : Solder plated, solderable per MIL-STD-750, Glass 3.5 +/- 0.2


    Original     		1N4148 LS4148 100mA 50mmTemperature 100MHz 1n4148 melf package glass passivated junction SOD323 PDF

    IN6642

    Abstract: 1N6642 die IN6642 diode JTX 1N6642 1N6638 1N6642 IN664 1N4148-1 1N6638U 1N6642U
    Text: COMPUTER DIODE SWITCHING, UNIMND SERIES FEATURES • M etallurgical Bond • Qualified to MIL-S-19500/578 • Planar Passivated Chip 1N6638, JTX, JTXV 1N6638U, JTX, JTXV 1N6642, JTX, JTXV 1N6642U, JTX, JTXV 1N6643, JTX, JTXV 1N6643U, JTX, JTXV DESCRIPTION


    OCR Scan     		1N6638, 1N6638U, IN6642, 1N6642U, 1N6643, 1N6643U, MIL-S-19500/578 1N4148-1 1N4150-1 1N6638 IN6642 1N6642 die IN6642 diode JTX 1N6642 1N6642 IN664 1N6638U 1N6642U PDF