nec laser diode
Abstract: NEC diode NDL3210S NDL3210 TO50 package nec bar code reader NDL321QS code diode b2e
Text: N E C ELECTRONICS I NC b2E D • b427525 0037^34 TTM « N E C E DATA SHEET NEC LASER DIODE NDL321 OS ELECTRON DEVICE 6 7 0 nm BAR CODE READER, POINTER APPLICATION AIGalnP DOUBLE HETEROSTRUCTURE VISIBLE LASER DIODE DESCRIPTION NDL3210S is a small package #5.6 mm AIGalnP 670 nm visible laser diode and especially developed for Bar Code Reader.
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b427525
NDL3210S
NDL321QS
b427S25
nec laser diode
NEC diode
NDL3210S
NDL3210
TO50 package
nec bar code reader
code diode b2e
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NEC k 2134
Abstract: NDL3200 k 2134 nec L-3200 2b427 nec bar code reader
Text: N E C ELECTRONICS INC b2E D • b l4 E 7 S S S 0037^24 T MS «N EC E DATA SHEET NEC LASER DIODE N D L3200 ELECTRON DEVICE 670 nm BAR CODE READER, POINTER APPLICATION AIGalnP DOUBLE HETEROSTRUCTURE VISIBLE LASER DIODE DESCRIPTION NDL3200 is an AIGalnP 670 nm visible laser diode and especially developed fo r Bar Code Reader, Pointer.
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L3200
NDL3200
b427S25
NDL3200
LC--2134
1989M
NEC k 2134
k 2134 nec
L-3200
2b427
nec bar code reader
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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NDL3210
Abstract: l3210
Text: N E C ELECTRONICS INC b 2E J> m b 4 2 7 S 25 0037^20 b=iG « N E C E DATA SHEET NEC LASER DIODE NDL3210 ELECTRON DEVICE 6 7 0 nm BAR CODE READER, POINTER APPLICATION AIGalnP DOUBLE HETEROSTRUCTURE VISIBLE LASER DIODE DESCRIPTION NDL3210 is an AIGalnP 670 nm visible laser diode and especially developed for Bar Code Reader, Pointer.
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NDL3210
NDL3210
l3210
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
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CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
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Untitled
Abstract: No abstract text available
Text: SIEMENS BBY 51-07 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment BBY 51-07 HHs Q62702- 1 =C1 2 = C2 Package CM Pin Configuration II Ordering Code
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Q62702-
OT-143
B235b05
G12DMfiT
0235bQ5
053SbDS
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samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
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ZD500
QF500
RHU002N06
200MA
OT-323
F820P
33x33mm
500MHz
K4J52324QC
512Mbit
samsung r540
Samsung R590
R721-R725
C732 SMD
10000NF
R616 R617
R714-R715
samsung r580
b16 r649
Smd q535
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SHXXC800
Abstract: sxhns100 HBN150 SXHNS150 Hirect SQ-870 hirect DIODE SA SXBN71 diode 0302C Hirect Diodes
Text: Engg. Publication 2 8/91 HIND RECTIFIERS LTD/ MKTG SbE D • 44^ I T ô M 0000020 b24 M H I N I Ordering Code : S A 34 B AR C 550 D SELECT A) Type of Diode R e ctifier Fast Recovery B) Voltage Class Code S SF V RRM required divided by 100 e.g. 15 will indicate 1500 volts VRRM
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l22433,
OM-15)
SHXXC800
sxhns100
HBN150
SXHNS150
Hirect
SQ-870
hirect DIODE SA
SXBN71
diode 0302C
Hirect Diodes
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PDF
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diode marking b2
Abstract: SDP410D
Text: SDP410D Semiconductor Band switching Diode Features • VHF tuner band switch applications. • Low Series Resistance : rS = 0.9Ω Max. • Small Total Capacitance : CT = 1.2pF(Max.) Ordering Information Type No. Marking Package Code SDP410D B2 SOD-323 unit :
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SDP410D
OD-323
KSD-C003-000
100MHz
diode marking b2
SDP410D
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STW47NM60ND
Abstract: 47NM60ND 365R 47NM60
Text: STW47NM60ND N-channel 600 V, 0.075 Ω, 35 A TO-247 FDmesh II Power MOSFET with fast diode Features Order code VDSS @ TJMAX RDS(on) max ID STW47NM60ND 650 V < 0.088 Ω 35 A • The worldwide best RDS(on)*area amongst the fast recovery diode devices ■
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STW47NM60ND
O-247
STW47NM60ND
47NM60ND
365R
47NM60
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54NM65ND
Abstract: No abstract text available
Text: STW54NM65ND N-channel 650 V, 0.055 Ω, 49 A TO-247 FDmesh II Power MOSFET with fast diode Features Order code VDSS (@Tjmax) RDS(on) max. ID STW54NM65ND 710 V < 0.065 Ω 49 A • The worldwide best RDS(on) * area amongst the fast recovery diode devices
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STW54NM65ND
O-247
O-247
54NM65ND
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PDF
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SDP410D
Abstract: No abstract text available
Text: SDP410D Semiconductor Band switching Diode Features • VHF tuner band switch applications. • Low Series Resistance : rS = 0.9Ω Max. • Small Total Capacitance : CT = 1.2pF(Max.) Ordering Information Type No. Marking Package Code SDP410D B2 SOD-323 unit : mm
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SDP410D
OD-323
KSD-C003-000
100MHz
SDP410D
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Silicon Variable.Capacitance Diode B B 112 • For AM tuning applications • Specified tuning range 1 . .,8 .0 V Type Marking Ordering Code BB 112 — Q62702-B240 Pin Configuration i ^ i - 03 Package1 TO-92 1 O- ^
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Q62702-B240
EHA07002
fiE35bD5
235b05
S35b05
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SDP410Q
Abstract: No abstract text available
Text: SDP410Q Semiconductor Band switching Diode Features • VHF tuner band switch applications. • Low Series Resistance : rS = 0.9Ω Max. • Low Total Capacitance : CT = 1.2pF(Max.) Ordering Information Type No. Marking Package Code SDP410Q B2 SOD-523 Outline Dimensions
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SDP410Q
OD-523
KSD-E003-002
SDP410Q
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vde 0435 c250
Abstract: Z318 114A4 kuhnke kuhnke relay 114A4 diode A2 9 Z366 02 114A4 kuhnke 114a4 kuhnke relay relay vde 0435 c250
Text: lais ttro-Re Qua Quattro Relay 114 Quattro Relay 114A4 • Standard type / • With LED and protection diode on request elais ttro-R Qua Order Code Order Code Quattro Relay 114 Type of relay Quattro Relay 114 A 4 – 24 V DC N Model A Plug-in type A Contact arrangement
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114A4
vde 0435 c250
Z318
114A4 kuhnke
kuhnke relay 114A4
diode A2 9
Z366 02
114A4
kuhnke 114a4
kuhnke relay
relay vde 0435 c250
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CT-815
Abstract: marking code BB Diode variable capacitance diode 520 BB 112 transistor BB 112 Am tuning DIODE capacitance BB112 CT815
Text: BB 112 Silicon Variable Capacitance Diode ● For AM tuning applications ● Specified tuning range 1 … 8.0 V BB 112 Type Marking Ordering Code Pin Configuration Package1 BB 112 – Q62702-B240 TO-92 Maximum Ratings Parameter Symbol Values Unit Reverse voltage
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Q62702-B240
CT-815
marking code BB Diode
variable capacitance diode 520
BB 112
transistor BB 112
Am tuning DIODE
capacitance
BB112
CT815
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PDF
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SDP410Q
Abstract: diode marking b2
Text: SDP410Q Semiconductor Band switching Diode Features • VHF tuner band switch applications. • Low Series Resistance : rS = 0.9Ω Max. • Low Total Capacitance : C T = 1.2pF(Max.) Ordering Information Type No. Marking Package Code SDP410Q B2 SOD-523 Outline Dime nsions
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SDP410Q
OD-523
KSD-E003-001
100MHz
SDP410Q
diode marking b2
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capacitor 27pf
Abstract: Capacitor RUBYCON CAPACITOR RUBYCON CAPACITOR 120 GRM188R71H102K capacitor 22 pf GRM188R71H104KA GRM188R71H103KA capacitor 56 pF Coilcraft
Text: DB-55015-165 BOM Component ID Description B1, B2 Ferrite Bead Value D1 Zener Diode 5.1 V L1 Inductor 35.5 nH L2 Inductor L3 Inductor L4 Case size Manufacturer Part Code PANASONIC EXCELDRC35C SOD110 PHILIPS BZX284C5V1 Mini COILCRAFT B09T 17.5 nH Mini COILCRAFT
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DB-55015-165
EXCELDRC35C
OD110
BZX284C5V1
GRM42-6C0G121_
GRM188R71H102K_
PD55015
214W-1-103E
capacitor 27pf
Capacitor
RUBYCON CAPACITOR
RUBYCON CAPACITOR 120
GRM188R71H102K
capacitor 22 pf
GRM188R71H104KA
GRM188R71H103KA
capacitor 56 pF
Coilcraft
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAR 63. W Silicon PIN Diode >PIN diode for high speed switching of RF signal »Low forward resistance >Very low capacitance • For frequencies up to 3 GHz BAR 63-04W BAR 63-05W BAR 63-06W C1/C2 A1/A2 EL -0 - nr TJ nr nr Marking Ordering Code Pin Configuration
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3-04W
3-05W
3-06W
Q62702-A1261
Q62702-A1267
Q62702-A1268
OT-323
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