s21 diode
Abstract: diode DB 3 C BAP50-03
Text: BAP50-03 General purpose PIN diode PIN DIODE 50 mAMPERES 50 VOLTS P b Lead Pb -Free Features: * Low diode capacitance * Low diode forward resistance 1 2 Application: SOD-323 * General RF applications. Description: * General purpose PIN diode in a SOD-323 package.
|
Original
|
BAP50-03
OD-323
OD-323
23-Jun-06
s21 diode
diode DB 3 C
BAP50-03
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DKV65222B SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV65222B is a Silicon Hyperabrupt Varactor Diode Designed for VHF/UHF Filters and Oscillators Requiring Octave Tuning. FEATURES INCLUDE: • CT4 = 50 pF Nominal • CT4 /CT20 = 6.3 Typical
|
Original
|
DKV65222B
DKV65222B
/CT20
CT4/CT20
|
PDF
|
70.2 Diode
Abstract: No abstract text available
Text: DKV6524D SILICON HYPERABRUPT TUNING VARACTOR DIODE DESCRIPTION: The ASI DKV6524D is a Silicon Hyperabrupt Varactor Diode Designed for VHF/UHF Filters and Oscillators Requiring Octave Tuning. FEATURES INCLUDE: • CT4 = 50 pF Nominal • CT4/CT20 = 6.3 Typical
|
Original
|
DKV6524D
DKV6524D
CT4/CT20
CT4/CT20
Hz/CT20
70.2 Diode
|
PDF
|
varactor diode datasheet
Abstract: DKV6522-12
Text: DKV6522-12 SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV6522-12 is an Silicon Hyperabrupt Varactor Diode Designed for VHF/UHF Filters and Oscillators Requiring Octave Tuning. FEATURES INCLUDE: • CT4 = 50 pF Nominal • CT4/CT20 = 6.2 Typical
|
Original
|
DKV6522-12
DKV6522-12
CT4/CT20
10ATINGS
varactor diode datasheet
|
PDF
|
symbol of varactor diode and equivalent circuit
Abstract: varactor diode notes DKV6522-24
Text: DKV6522-24 SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV6522-24 is a Silicon Hyperabrupt Varactor Diode Designed for VHF/UHF Filters and Oscillators Requiring Octave Tuning. FEATURES INCLUDE: • CT4 = 50 pF Nominal • CT4/CT20 = 6.0 Typical
|
Original
|
DKV6522-24
DKV6522-24
CT4/CT20
symbol of varactor diode and equivalent circuit
varactor diode notes
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DKV6520B-81 SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV6520B-81 is a Silicon Hyperabrupt Varactor Diode Designed for VHF/UHF Filters and Oscillators Requiring Octave Tuning. FEATURES INCLUDE: • CT4 = 20 pF Nominal • CT4/CT20 = 5.9 Typical
|
Original
|
DKV6520B-81
DKV6520B-81
CT4/CT20
CT4/CT20
|
PDF
|
DKV6522-12
Abstract: "Varactor Diode"
Text: DKV6522-12 SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV6522-12 is an Silicon Hyperabrupt Varactor Diode Designed for VHF/UHF Filters and Oscillators Requiring Octave Tuning. FEATURES INCLUDE: • CT4 = 50 pF Nominal • CT4/CT20 = 6.2 Typical
|
Original
|
DKV6522-12
DKV6522-12
CT4/CT20
"Varactor Diode"
|
PDF
|
DKV6522B
Abstract: No abstract text available
Text: DKV6522B SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV6522B is a Silicon Hyperabrupt Varactor Diode Designed for VHF/UHF Filters and Oscillators Requiring Octave Tuning. FEATURES INCLUDE: • CT4 = 50 pF Nominal • CT4/CT20 = 6.3 Typical • Hermetic Glass Package
|
Original
|
DKV6522B
DKV6522B
CT4/CT20
|
PDF
|
"Varactor Diode"
Abstract: varactor diode datasheet DKV6522B
Text: DKV6522B SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV6522B is a Silicon Hyperabrupt Varactor Diode Designed for VHF/UHF Filters and Oscillators Requiring Octave Tuning. FEATURES INCLUDE: • CT4 = 50 pF Nominal • CT4/CT20 = 6.2 Typical • Hermetic Glass Package
|
Original
|
DKV6522B
DKV6522B
CT4/CT20
"Varactor Diode"
varactor diode datasheet
|
PDF
|
ECONO2-6PACK IGBT module
Abstract: IC 7425 datasheet IR E78996 IR E78996 105 IRF E78996 E78996 IR ic 4075 datasheet or gate GB35XF120K
Text: PD - 94570 GB35XF120K IGBT 6PACK MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
|
Original
|
GB35XF120K
ECONO2-6PACK IGBT module
IC 7425 datasheet
IR E78996
IR E78996 105
IRF E78996
E78996 IR
ic 4075 datasheet or gate
GB35XF120K
|
PDF
|
DKV6520-12
Abstract: ASI30291
Text: DKV6520-12 SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV6520-12 is an Silicon Hyperabrupt Varactor Diode Designed for VHF/UHF Filters and Oscillators Requiring Octave Tuning. FEATURES INCLUDE: • CT4 = 18 pF Min. • CT4/CT20 = 5.8 Typical • Hermetic Glass Package
|
Original
|
DKV6520-12
DKV6520-12
CT4/CT20
ASI30291
ASI30291
|
PDF
|
78996
Abstract: ci 4538 12v to 220 v ac inverter IC 4538 IC td 4538 GB15RF120K application of IC 4538
Text: PD - 94571 GB15RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
|
Original
|
GB15RF120K
78996
ci 4538
12v to 220 v ac inverter
IC 4538
IC td 4538
GB15RF120K
application of IC 4538
|
PDF
|
GB25RF120K
Abstract: No abstract text available
Text: PD - 94552 GB25RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
|
Original
|
GB25RF120K
indicated360V
GB25RF120K
|
PDF
|
C-150
Abstract: IRFI840G IRGIB6B60KD PD944
Text: PD-94427C IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
|
Original
|
PD-94427C
IRGIB6B60KD
O-220
IRFI840G
O-220
C-150
IRFI840G
IRGIB6B60KD
PD944
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
|
Original
|
IRGPS40B120UDP
Super-247
Super-247â
IRFPS37N50A
|
PDF
|
C-150
Abstract: IRGIB6B60KD
Text: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
|
Original
|
PD-94427D
IRGIB6B60KD
O-220
O-220
C-150
IRGIB6B60KD
|
PDF
|
transistor c 2335
Abstract: C-150 IRFI840G IRGIB15B60KD1
Text: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
|
Original
|
IRGIB15B60KD1
O-220
IRFI840G
O-220
transistor c 2335
C-150
IRFI840G
IRGIB15B60KD1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94385A IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
|
Original
|
4385A
IRGB5B120KD
O-220
O-220AB
IRF1010
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD- 94914 IRGIB15B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
|
Original
|
IRGIB15B60KD1PbF
O-220
O-220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-94427A IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
|
Original
|
PD-94427A
IRGIB6B60KD
O-220
IRFI840G
O-220
|
PDF
|
IRGIB15B60KD1P
Abstract: C-150
Text: PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
|
Original
|
IRGIB15B60KD1P
O-220
O-220
IRGIB15B60KD1P
C-150
|
PDF
|
transistor BR 9013
Abstract: C-150 IRFI840G IRGIB15B60KD1 transistor c 2335
Text: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
|
Original
|
4599A
IRGIB15B60KD1
O-220
IRFI840G
O-220
transistor BR 9013
C-150
IRFI840G
IRGIB15B60KD1
transistor c 2335
|
PDF
|
AN-994
Abstract: C-150 EIA-541 IRFR120
Text: PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
|
Original
|
IRGR3B60KD2PbF
Contin18
EIA-481
EIA-541.
EIA-481.
AN-994
C-150
EIA-541
IRFR120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CT220802 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Split SCR/Diode POW-R-BLOK Modules 20 Amperes/800 Volts Description: OUTLINE DRAWING Powerex Split SCR/Diode POW-R-BLOK™ Modules are designed for use in applications
|
OCR Scan
|
CT220802
Amperes/800
peres/800
MAX/10
|
PDF
|
