ka968
Abstract: D1951SH65T fast diode
Text: Technische Information / Technical Information Schnelle Diode Fast Diode D1951SH65T S Zieldaten / Possible Data Features • Specially designed for snubberless operation • 140°C maximum junction temperature • Low losses, soft recovery • Electroactive passivation by a-C:H
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D1951SH65T
ka968
D1951SH65T
fast diode
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D195
Abstract: D1956 D1952 herley attenuator D-1958 DIODE D195
Text: Herley: Series D195 Octave-Band Page 1 of 2 Defense Electronics> Microwave Products> Attenuators & Modulators Selection Guide View Printable Version Series D195 Octave-Band PIN Diode Attenuator/Modulators How to Buy Application Notes The Series D195 voltage-controlled linearized attenuator/modulators are integrated
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D195OA*
D195
D1956
D1952
herley attenuator
D-1958
DIODE D195
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Untitled
Abstract: No abstract text available
Text: S T U/D1955NL S amHop Microelectronics C orp. Oct 07,2004 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 55@ V G S = 10V
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Untitled
Abstract: No abstract text available
Text: S T U/D1955NL S amHop Microelectronics C orp. Dec 31,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.
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D1955NL
Abstract: D1955
Text: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.
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D1955NL
D1955
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Untitled
Abstract: No abstract text available
Text: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.
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U/D1955NL
O-252
O-251
O-252AA
Tube/TO-252
O-252
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Untitled
Abstract: No abstract text available
Text: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.
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U/D1955NL
O-252
O-251
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Tube/TO-252
O-252
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FS300R12OE4P
Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in
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K4201
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)
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2SK4201
2SK4201
2SK4201-S19-AY
O-220
K4201
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2SK4201
Abstract: 2SK4201-S19 2SK42
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)
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2SK4201
2SK4201
2SK4201-S19-AY
O-220
2SK4201-S19
2SK42
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90n03
Abstract: NP90N03VUG NP90N03VUG-E1-AY DIODE MARKING code UG 45
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N03VUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N03VUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N03VUG-E1-AY NP90N03VUG-E2-AY
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NP90N03VUG
NP90N03VUG
NP90N03VUG-E1-AY
NP90N03VUG-E2-AY
O-252
AEC-Q101ems,
90n03
NP90N03VUG-E1-AY
DIODE MARKING code UG 45
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60n03
Abstract: 60N03 m 60N03 UG 60N03 to NP60N03S NP60N03SUG D19547EJ1V0DS
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N03SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP60N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP60N03SUG-E1-AY NP60N03SUG-E2-AY
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NP60N03SUG-E2-AY
O-252
AEC-Q101ems,
60n03
60N03 m
60N03 UG
60N03 to
NP60N03S
D19547EJ1V0DS
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90n04
Abstract: NP90N04VUG 90n04 UG NP90N04V DIODE MARKING code UG 45
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N04VUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N04VUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N04VUG-E1-AY NP90N04VUG-E2-AY
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NP90N04VUG-E2-AY
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AEC-Q101ems,
90n04
90n04 UG
NP90N04V
DIODE MARKING code UG 45
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90N055
Abstract: NP90N055 NP90N055VUG NP90N055VUG-E1-AY NP90N055VUG-E2-AY MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR DIODE MARKING code UG 45
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N055VUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N055VUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N055VUG-E1-AY NP90N055VUG-E2-AY
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NP90N055VUG-E2-AY
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90N055
NP90N055
NP90N055VUG-E1-AY
NP90N055VUG-E2-AY
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
DIODE MARKING code UG 45
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2SK4212
Abstract: 2SK4212-ZK-E1-AY 2SK421 2SK4212-ZK
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4212 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4212 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
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2SK4212-ZK-E1-AY
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2SK4212-ZK-E1-AY
2SK421
2SK4212-ZK
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2SK4213
Abstract: 2SK421 2SK4213-ZK 2SK42 2sk4213-zk-e1-ay
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4213 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
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2SK4213-ZK-E1-AY
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2SK421
2SK4213-ZK
2SK42
2sk4213-zk-e1-ay
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2SK4201
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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90n03
Abstract: NP90N03VUG
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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D1952
Abstract: D1958 D1954 d1955 D195 D1956 D-1958 D1953
Text: Series D I95 Octave-Bond PIN Diode Attenuator/Modulators Witt's integrate:! :>ver$ SERIES D195 The Series D195 voltage-controlled linearized at tenuator/modulators are integrated assemblies con sisting of a Series 195 unit and a hybridized driver circuit which provides a nominal transfer function of
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D1950A
D1952
D1953
D1954,
D1955
D1956
D1958
D1954
D195
D-1958
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pin diode attenuator
Abstract: No abstract text available
Text: A tte n iin -if 1 ;• General Microwave PIN diode attenuators cover the frequency range from 200 MHz to 40 GHz and are available in numerous configurations to permit the user to optimize system performance. Most designs are available with either analog or digital control,
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D1959
Abstract: No abstract text available
Text: Models 1959, D l959 Millimeter Wave PIN Diode Attenuator/Modulator MODEL 1959 The M odel 1959 is a current-controlled attenuator/ modulator that provides a minimum of 50 d B of attenuation over the frequency range of 18 to 40 G H z. A s shown in figure 1 below, the rf circuit uses two
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D1959
D1959
71F0RKM
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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H9130H
Abstract: imt 9010 microwave associates isolator ferrite TRANSISTOR D1959 Schematic diagram of DRO attenuator 329-6-80 general microwave F9120 ups PURE SINE WAVE schematic diagram F9120AH M862B
Text: GENERAL ¥ ] MICROWAVE FULL LI NE C A T A L O G C O M P O N E N T S AND I N S T R U M E N T S Ordering Information 1. Please order by model number, option number where applicable , and product name. Telephone orders for standard catalog products will be accepted and
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S-162
H9130H
imt 9010
microwave associates isolator ferrite
TRANSISTOR D1959
Schematic diagram of DRO
attenuator 329-6-80
general microwave F9120
ups PURE SINE WAVE schematic diagram
F9120AH
M862B
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H9130H
Abstract: F9120AH F9114A F9120 schematic diagram online UPS art 400 military passive component General Microwave V6120 28001 transformer SP8T switch package ghz M864BH
Text: GENERAL Oscillators Full Line Componenf/MIC Catalog MICROWAVE Phase Shifters Ordering Information 1. Please order by model number, option number where applicable , and product name. Telephone orders for standard catalog products will be accepted and processed immediately. However, shipment cannot be made until a
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MIL-STD-1772
H9130H
F9120AH
F9114A
F9120
schematic diagram online UPS art 400
military passive component
General Microwave V6120
28001 transformer
SP8T switch package ghz
M864BH
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